November 24th, 2016
•Molecular beam epitaxy is used to grow N-polar InAlN-barrier high-electron-mobility transistors (HEMTs). Control of the wafer preparation, layer growth conditions and epitaxial structure results in smooth, compositionally homogeneous InAlN layers and HEMTs with mobility as high as 1,750 cm2/V∙sec.
Tags
Related Videos
Molecular Beam Mass Spectrometry With Tunable Vacuum Ultraviolet (VUV) Synchrotron Radiation
Spatial Separation of Molecular Conformers and Clusters
Measurement of X-ray Beam Coherence along Multiple Directions Using 2-D Checkerboard Phase Grating
Speciation and Bioavailability Measurements of Environmental Plutonium Using Diffusion in Thin Films
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Focused Ion Beam Fabrication of LiPON-based Solid-state Lithium-ion Nanobatteries for In Situ Testing
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Preparing an Isotopically Pure 229Th Ion Beam for Studies of 229mTh
ABOUT JoVE
Copyright © 2024 MyJoVE Corporation. All rights reserved