JoVE Logo
Faculty Resource Center

Sign In

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

DOI :

10.3791/54775-v

November 24th, 2016

November 24th, 2016

8,340 Views

1NRC Postdoctoral Scholar, Naval Research Laboratory, 2Electronics Science and Technology Division, Naval Research Laboratory

Molecular beam epitaxy is used to grow N-polar InAlN-barrier high-electron-mobility transistors (HEMTs). Control of the wafer preparation, layer growth conditions and epitaxial structure results in smooth, compositionally homogeneous InAlN layers and HEMTs with mobility as high as 1,750 cm2/V∙sec.

Tags

Plasma assisted Molecular Beam Epitaxy

-- Views

Related Videos

article

Molecular Beam Mass Spectrometry With Tunable Vacuum Ultraviolet (VUV) Synchrotron Radiation

article

Spatial Separation of Molecular Conformers and Clusters

article

Measurement of X-ray Beam Coherence along Multiple Directions Using 2-D Checkerboard Phase Grating

article

Speciation and Bioavailability Measurements of Environmental Plutonium Using Diffusion in Thin Films

article

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

article

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

article

Focused Ion Beam Fabrication of LiPON-based Solid-state Lithium-ion Nanobatteries for In Situ Testing

article

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

article

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

article

Preparing an Isotopically Pure 229Th Ion Beam for Studies of 229mTh

JoVE Logo

Privacy

Terms of Use

Policies

Research

Education

ABOUT JoVE

Copyright © 2024 MyJoVE Corporation. All rights reserved