Name: electrospray deposition of uniform thickness ge23sb7s70 and as40s60 chalcogenide glass films
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Funding for this work was provided by Defense Threat Reduction Agency contracts HDTRA1-10-1-0073: HDTRA1-13-1-0001.

注意:请参考材料安全数据表（MSDS）使用这些化学品时，要意识到其他危害，如高电压，沉积系统的机械运动，以及所使用的电磁炉和炉的高温。 注意:开始这个协议与散装硫系玻璃，这是由公知的熔融淬火工艺2制备。 1. CHG溶液的制备注意:两种溶液在这项研究中利用，戈23锑7第70和作为第40号60，既溶于乙醇胺以0.05克/ ml的浓度。两种溶液的制备是相同的。执行所有步骤在本节通风橱内。 <ol><li>粉碎块状玻璃成使用研钵和杵细粉。 </li><li>混合0.25克玻璃用5ml乙醇胺溶剂。 </li><li>允许1-2天完全溶解玻璃。通过在电炉上的溶液以〜50-75℃的表面温度下加热加速溶解。通过搅拌该混合物，如用磁力搅拌棒增加溶解速度。 </li><li>过滤溶液装入小瓶用0.45微米聚四氟乙烯（PTFE）过滤器，以从溶液中除去任何大的沉淀物。 </li></ol> 2.设置沉积过程注:电沉积系统在图1中示意性地描绘在该过程中，利用带PTFE尖柱塞50微升玻璃注射器。注射器是一个可移动的针样式具有锥形尖，22号外径针（0.72外径，0.17内径），以及被连接到电系统的垂直取向的注射器泵。所述电系统暴露于这些初始实验环境气氛，虽然系统被设置手套箱的内部。该系统应该是SE叔向上在它从用户中分离，如通风橱的一个位置。 <ol><li>放置针头插入CHG溶液的末尾。通过设置在提取模式注射泵以缓慢的速度，如150微升/小时，以防止气泡的形成吸取溶液进入注射器。 </li><li>设置在喷嘴的端部和所述Si衬底的通过手动移动模式下使用数控顶部之间的工作距离（10毫米这种情况下）。放置在Si衬底，这是未掺杂的，并具有10,000欧姆 - 厘米的电阻率，在连接到电源接地回路的铝板。 </li><li>通过从利用注射泵，注射器分配一些液体允许的液体的小体积涂覆喷嘴的外表面。开启热板上在约75-100℃的表面温度。等待〜2小时，以允许玻璃的膜干燥喷嘴表面上。这种涂层有助于喷雾的稳定性。 </li></ol> 3.电沉积CHG薄膜<ol><li>连接直流（DC）电源在注射器喷嘴具有电剪辑。 </li><li>在10微升/小时和调整的直流电压设定流量，以形成一个稳定的泰勒锥（〜10毫米的工作距离4千伏）。查看与高倍率相机喷雾。 </li><li>启动喷射在基板上的数控运动以沉积膜，一旦喷射是稳定的。 <ol><li>使用为均匀的厚度，或一维（1-D）通过用于线性厚度轮廓的蜿蜒路径。 </li><li>使用通过用距离比基板的宽度长，使得所述喷雾的移动完全离开基片的制备下一个通之前。这样做是使得液体的流动速率是在衬底上的每一点是相同的。 </li><li>使用LinuxCNC软件控制CNC系统。举一个例子，可以使用补充G-码为用0.5mM遍之间的偏移，为20mm /分钟，各遍30毫米长速度的蜿蜒路径。 图1 </强&gt;示出了具有蛇形路径制成的膜的示意性并且还定义的坐标系。 </li></ol></li><li>若使淀积膜在真空下的一系列热处理的每个1小时，在100，125，150和175℃，并在200℃下16小时。热处理参数的优化提出本文的代表结果部分。 </li></ol> 4.表征CHG薄膜<ol><li>残留溶剂去除的表征<ol><li>定期进行透射FTIR光谱整个退火条件，每次在样品上测量同一位置。绘制在样品台上的基板的概要，并且每次测量时将其放置此轮廓之内。 <ol><li>在FTIR软件，点击"实验设置"，然后键入扫描为64.单击以在扫描范围内的"台"标签，型号数量7000 -1〜500厘米3 -1。单击采取只在仪器样品台后台扫描"采集背景"。然后将舞台上的样品，并点击"采集样本"取样品的光谱。 </li></ol></li><li>跟踪除去溶剂，估计在膜基质的有机吸收的大小。在FTIR软件，画出的基线在所关注的光谱范围内，约2,300-3,600厘米-1。软件计算的样品，相对于由用户指定的基线的透射光谱的下方的区域。 </li></ol></li><li>薄膜厚度的测量<ol><li>刮开用细镊子点的电影，直到黑暗基板成为浅色的膜，这通常发生在轻压力1刮伤运动之中可见。除去由用压缩氮气刮伤碎屑。 <ol><li>通过使用接触轮廓曲线仪测量毯膜的厚度从膜到衬底确定步骤的高度。开"测量设置"，并在0.1毫米/秒的扫描速率类型，以及为500μm扫描长度。 </li><li>放置在台上的样品，定位划痕和旋转，使得暂存在左右方向上取向的样品。移动台，使得十字只是临时的下方，并通过点击开始表面扫描"测量"。 </li><li>一旦扫描完成后，拖动R和M光标，使两者都在薄膜表面上，然后单击"级别两点直线"，以平表面轮廓。将一个光标划痕的底部，并写在y维度各光标位置之间的距离。在多个位置测量厚度，以获得数据的平均厚度和方差。 </li></ol></li><li>通过扫描轮廓在整个薄膜（垂直于1确定非均匀厚度的膜的厚度轮廓用于沉积膜），并使用该表面轮廓来创建膜厚对位置的曲线图-D运动。 <ol><li>通过输入一个适当的扫描长度比胶片，通常是10-20毫米，宽度更大的整个胶片扫描"测量设置"。放置在膜的一侧的未涂覆基材上的十字准线和点击"测量"，允许轮廓完成未涂覆基材上的扫描在膜的另一侧。右键单击表面轮廓和出口为.csv文件。 </li><li>或者，如果基片是不够平坦，以获得可靠的厚度数据，划伤薄膜向下到衬底与扫描轮廓划痕介于约1毫米，并在整个膜。写下每个刮擦厚度和水平位置，并创建膜厚的曲线图与从这些数据点的位置。 </li></ol></li></ol></li><li>测量表面粗糙度用白光干涉13。调整焦距和阶段倾斜，以产生在整个测量区，在这种情况下是414微米×414微米的使用5倍目标干涉条纹。取整个厚度均匀薄膜五次测量，以确定数据的平均粗糙度和方差。 </li><li>在600-1,700纳米波长范围内的椭圆仪14测量的折射率。在这种情况下，用60°的入射角和光束聚焦到35μm的光点大小。 <ol><li>取未涂覆基材上的测量，拟合数据以确定原生氧化层的厚度。使用此信息样品为三层系统型号:硅晶片+天然氧化+镀膜。取在样品上的不同位置八次测量，以确定平均折射率和方差，在使用柯西模型拟合数据。 </li></ol></li></ol>

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The authors have nothing to disclose.

在沉积相对于衬底喷雾蛇形运动均匀厚度薄膜的开始时，薄膜厚度分布正在增加。一旦在y方向上移动的距离超过了喷雾（在衬底抵达时）的直径，所述流率变为大约相当于用于在衬底上的每个点，和厚度均匀性的实现。以确定一个均匀厚度电喷雾薄膜，理论膜厚T的适当的沉积参数，被利用。这是通过等式1，这是从在表1中所示的沉积参数导出给出。 <img alt="式（1）" src="/files/ftp_...

硫系玻璃（CHGS）是其广泛红外线传输和顺从到均匀的厚度，毯膜沉积1-3公知的。片上的波导，谐振器，和其他光学元件然后可以通过光刻技术从该膜上形成，然后随后的聚合物涂层来制造微光器件4-5。我们寻求发展的一个重要应用是小型，廉价，高度敏感的化学传感在中红外，许多有机物质具有光学特征6操作系统的设备。微光化学传感器能在恶劣的环境中，如邻近的核反应堆，其中，暴露于辐射（γ和α）可能被部署。因此，CHG电材料的光学性质的修饰的广泛的研究是至关重要的，并会在另一篇论文中报告。在这篇文章中，CHGS的电膜沉积展的，因为它是一种方法最近才适用于CHGS 7。 现有的膜沉积方法可分为两类:气相沉积技术，如散装CHG目标热蒸发，和溶液衍生技术，如通过旋涂溶解在胺溶剂CHG的溶液。通常，溶液衍生膜倾向于导致光信号中的较高的损失，由于在膜基质3的残留溶剂的存在下，但溶液衍生技术通过蒸镀一个独特的优点是纳米颗粒的简单掺入（ 例如，量子点或量子点）之前，旋涂8-10。然而，纳米粒子的聚集已经在旋涂膜10观察到。此外，尽管气相沉积和旋涂的方法是公适合于均匀的厚度，毯膜的形成，他们不能够很好的局部沉积，或工程化的非均匀厚度的膜。 Furthermore，旋涂的放大是困难的，因为由于从基板径流高的材料浪费，因为它不是一个连续的过程11。 为了克服一些当前CHG薄膜沉积技术的局限，我们已经调查电到CHG材料体系中的应用。在此过程中，气溶胶喷雾可以在CHG溶液的通过施加高电压电场7形成。因为它是一个连续过程，是用卷到卷处理兼容，接近100％的使用的材料是可能的，这是通过旋涂的优点。此外，我们已经提出，在个别CHG气溶胶小滴单个量子点的隔离可能导致更好的QD的分散性，由于带电液滴被空间自分散由库仑斥力，结合高表面积的液滴的更快的干燥动力学该量子点的运动尽量减少因增大液滴的粘度，同时在飞行中，12 7，最后，局部沉积是可用于制造GRIN涂层的优点。与电QD都掺入和GRIN制造CHG的探索目前正在进行提交作为以后的文章。 在本公开中，电的灵活性是通过两个局部沉积和均匀厚度的薄膜证明。调查薄膜平面光子应用的适宜性，传输傅里叶变换红外（FTIR）光谱，表面质量，厚度，和被利用折射率测量。

<table><tbody><tr><td>Ethanolamine</td><td>Sigma-Aldrich</td><td>411000-100ML</td><td>99.5% purity</td></tr><tr><td>Si wafer</td><td>University Wafer</td><td>1708</td><td>Double side polished, undoped</td></tr><tr><td>Syringe</td><td>Sigma-Aldrich</td><td>20788</td><td>Hamilton 700 series, 50 microliter volume</td></tr><tr><td>Syringe pump</td><td>Chemyx</td><td>Nanojet</td><td></td></tr><tr><td>CNC milling machine</td><td>MIB instruments</td><td>CNC 3020</td><td></td></tr><tr><td>Power supply</td><td>Acopian</td><td>P015HP4</td><td>AC-DC power supply, 15 kV, 4 mA</td></tr></tbody></table>

electrospray deposition of uniform thickness ge23sb7s70 and as40s60 chalcogenide glass films

溶液为基础的电膜沉积，这与连续，辊到辊处理兼容，施加到硫族化物玻璃。两个硫系成分都 ​​证明:GE 23锑7第70和40 号第60条，这都被用于平面中红外（中红外）微光器件广泛的研究。在这种方法中，均匀厚度的薄膜可通过使用计算机数字控制（CNC）运动的制造。硫属化物玻璃（CHG）通过沿蛇形路径单个喷嘴书面在衬底上。膜真空以除去残余的溶剂和致密膜下进行一系列的100℃和200℃之间的热处理。基于传输傅里叶变换红外光谱（FTIR）和表面粗糙度测量中，发现这两种组合物以适合于在中红外区域操作平面器件的制造。残留溶剂去除被认为是更快的为40秒60薄膜相比，戈23锑7第70。基于电的优势，梯度折射率（GRIN）中红外透明涂层的直接打印设想，由于在该研究中两种组合物的折射率之差。

用于获得均匀厚度的薄膜具有单一的喷嘴电蛇形路径的示意图示于图2; 图3示出了部分固化作为第40号60膜的一例透射FTIR光谱与喷雾的蛇形运动制成，如以及纯乙醇胺溶剂的频谱。从可以从红外光谱如在图3中可以得到的信息， 图4示出在整个厚度均匀的热处理戈23锑7第70和作为第...

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Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films

A method of uniform thickness solution-derived chalcogenide glass film deposition is demonstrated using computer numerical controlled motion of a single-nozzle electrospray.

厚度均匀葛电沉积<sub&gt; 23</sub&gt;锑<sub&gt; 7</sub&gt;取值<sub&gt; 70</sub&gt;和As<sub&gt; 40</sub&gt;取值<sub&gt; 60</sub&gt;硫系玻璃薄膜

Solution-based electrospray film deposition, which is compatible with continuous, roll-to-roll processing, is applied to chalcogenide glasses. Two ...

electrospray-deposition-uniform-thickness-ge23sb7s70-as40s60

Research

JoVE Journal

Engineering

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films

8.5K 次观看.  Clemson University. A method of uniform thickness solution-derived chalcogenide glass film deposition is demonstrated using computer numerical controlled motion of a single-nozzle electrospray.

视频: Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films

Formation of Thick Dense Yttrium Iron Garnet Films Using Aerosol Deposition

Aerosol deposition (AD) is a thick-film deposition process that can produce layers up to several hundred micrometers thick with densities greater than 95% of the bulk. The primary advantage of AD is that the deposition takes place entirely at ambient temperature; thereby enabling film growth in material systems with disparate melting temperatures. This report describes in detail the processing steps for preparing the powder and for performing AD using the custom-built system. Representative characterization results are presented from scanning electron microscopy, profilometry, and ferromagnetic resonance for films grown in this system. As a representative overview of the capabilities of the system, focus is given to a sample produced following the described protocol and system setup. Results indicate that this system can successfully deposit 11 &#181;m thick yttrium iron garnet films that are &#160;&#62; 90% of the bulk density during a single 5 min deposition run. A discussion of methods to afford better control of the aerosol and particle selection for improved thickness and roughness variations in the film is provided.

This report describes the use of a custom-built system to perform aerosol deposition of thick films of yttrium iron garnet onto sapphire substrates at RT. The deposited films are characterized using scanning electron microscopy, profilometry, and ferromagnetic resonance to give a representative overview of the capabilities of the technique.

浓稠钇铁石榴石薄膜的形成使用气溶胶沉积

Aerosol deposition (AD) is a thick-film deposition process that can produce layers up to several hundred micrometers thick with densities greater than 95% ...

科研

工程学

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

Atmospheric pressure spatial atomic layer deposition (AP-SALD) was used to deposit n-type ZnO and Zn1-xMgxO thin films onto p-type thermally oxidized Cu2O substrates outside vacuum at low temperature. The performance of photovoltaic devices featuring atmospherically fabricated ZnO/Cu2O heterojunction was dependent on the conditions of AP-SALD film deposition, namely, the substrate temperature and deposition time, as well as on the Cu2O substrate exposure to oxidizing agents prior to and during the ZnO deposition. Superficial Cu2O to CuO oxidation was identified as a limiting factor to heterojunction quality due to recombination at the ZnO/Cu2O interface. Optimization of AP-SALD conditions as well as keeping Cu2O away from air and moisture in order to minimize Cu2O surface oxidation led to improved device performance. A three-fold increase in the open-circuit voltage (up to 0.65 V) and a two-fold increase in the short-circuit current density produced solar cells with a record 2.2% power conversion efficiency (PCE). This PCE is the highest reported for a Zn1-xMgxO/Cu2O heterojunction formed outside vacuum, which highlights atmospheric pressure spatial ALD as a promising technique for inexpensive and scalable fabrication of Cu2O-based photovoltaics.

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

Here we present a protocol for synthesizing Zn1-xMgxO/Cu2O heterojunctions in open-air at low temperature via atmospheric pressure spatial atomic layer deposition (AP-SALD) of Zn1-xMgxO on cuprous oxide. Such high quality conformal metal oxides can be grown on a variety of substrates including plastics by this cheap and scalable method.

在铜改善异质结质量<sub&gt; 2</sub&gt; O型的太阳能电池通过大气压力的空间原子层沉积的优化<br /&gt;锌<sub&gt; 1-X</sub&gt;镁<sub系列&gt; X</sub&gt; 0

Atmospheric pressure spatial atomic layer deposition (AP-SALD) was used to deposit n-type ZnO and Zn1-xMgxO thin films onto p-type thermally oxidized Cu2O ...

化学

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

This work describes the detailed protocol for preparing piezoelectric macroporous epitaxial quartz films on silicon(100) substrates. This is a three-step process based on the preparation of a sol in a one-pot synthesis which is followed by the deposition of a gel film on Si(100) substrates by evaporation induced self-assembly using the dip-coating technique and ends with a thermal treatment of the material to induce the gel crystallization and the growth of the quartz film. The formation of a silica gel is based on the reaction of a tetraethyl orthosilicate and water, catalyzed by HCl, in ethanol. However, the solution contains two additional components that are essential for preparing mesoporous epitaxial quartz films from these silica gels dip-coated on Si. Alkaline earth ions, like Sr2+ act as glass melting agents that facilitate the crystallization of silica and in combination with cetyl trimethylammonium bromide (CTAB) amphiphilic template form a phase separation responsible of the macroporosity of the films. The good matching between the quartz and silicon cell parameters is also essential in the stabilization of quartz over other SiO2 polymorphs and is at the origin of the epitaxial growth.

A protocol is presented for the preparation of piezoelectric macroporous epitaxial films of quartz on silicon by solution chemistry using dip-coating and thermal treatments in air.

化学溶液沉积在硅外延大孔石英薄膜的制备

This work describes the detailed protocol for preparing piezoelectric macroporous epitaxial quartz films on silicon(100) substrates. This is a three-step ...

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and conformality by taking advantage of self-limiting reactions between vapor-phase precursors and the growing film. Perovskite oxides present potential for next-generation electronic materials, but to-date have mostly been deposited by physical methods. This work outlines a method for depositing SrTiO3 (STO) on germanium using ALD. Germanium has higher carrier mobilities than silicon and therefore offers an alternative semiconductor material with faster device operation. This method takes advantage of the instability of germanium's native oxide by using thermal deoxidation to clean and reconstruct the Ge (001) surface to the 2&#215;1 structure. 2-nm thick, amorphous STO is then deposited by ALD. The STO film is annealed under ultra-high vacuum and crystallizes on the reconstructed Ge surface. Reflection high-energy electron diffraction (RHEED) is used during this annealing step to monitor the STO crystallization. The thin, crystalline layer of STO acts as a template for subsequent growth of STO that is crystalline as-grown, as confirmed by RHEED. In situ X-ray photoelectron spectroscopy is used to verify film stoichiometry before and after the annealing step, as well as after subsequent STO growth. This procedure provides framework for additional perovskite oxides to be deposited on semiconductors via chemical methods in addition to the integration of more sophisticated heterostructures already achievable by physical methods.

This work details the procedures for the growth and characterization of crystalline SrTiO3 directly on germanium substrates by atomic layer deposition. The procedure illustrates the ability of an all-chemical growth method to integrate oxides monolithically onto semiconductors for metal-oxide semiconductor devices.

锗通过原子层沉积钙钛矿型钛酸锶的外延生长

Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and ...

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.&#160; We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.&#160; Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

We present a detailed method for fabricating ultra-thin color films with improved characteristics for optical coatings. The oblique angle deposition technique using an electron beam evaporator allows improved color tunability and purity. Fabricated films of Ge and Au on Si substrates were analyzed by reflectance measurements and color information conversion.

用斜角沉积法制备高吸收介质的超薄彩色薄膜

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.&#160; We present ...

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (Cu variant) entropy-stabilized oxides. Phase pure and chemically homogeneous (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (x = 0.20, 0.27, 0.33) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (x = 0.11, 0.27) ceramic pellets are synthesized and used in the deposition of ultra-high quality, phase pure, single crystalline thin films of the target stoichiometry. A detailed methodology for the deposition of smooth, chemically homogeneous, entropy-stabilized oxide thin films by pulsed laser deposition on (001)-oriented MgO substrates is described. The phase and crystallinity of bulk and thin film materials are confirmed using X-ray diffraction. Composition and chemical homogeneity are confirmed by X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy. The surface topography of thin films is measured with scanning probe microscopy. The synthesis of high quality, single crystalline, entropy-stabilized oxide thin films enables the study of interface, size, strain, and disorder effects on the properties in this new class of highly disordered oxide materials.

The synthesis of high quality bulk and thin film (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O entropy-stabilized oxides is presented.

组分变熵稳定氧化物的体积和薄膜合成

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and ...

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Reduction of threading dislocation density (TDD) in epitaxial germanium (Ge) on silicon (Si) has been one of the most important challenges for the realization of monolithically integrated photonics circuits. The present paper describes methods of theoretical calculation and experimental verification of a novel model for the reduction of TDD. The method of theoretical calculation describes the bending of threading dislocations (TDs) based on the interaction of TDs and non-planar growth surfaces of selective epitaxial growth (SEG) in terms of dislocation image force. The calculation reveals that the presence of voids on SiO2 masks help to reduce TDD. Experimental verification is described by germanium (Ge) SEG, using an ultra-high vacuum chemical vapor deposition method and TD observations of the grown Ge via etching and cross-sectional transmission electron microscope (TEM). It is strongly suggested that the TDD reduction would be due to the presence of semicylindrical voids over the SiO2 SEG masks and growth temperature. For experimental verification, epitaxial Ge layers with semicylindrical voids are formed as the result of SEG of Ge layers and their coalescence. The experimentally obtained TDDs reproduce the calculated TDDs based on the theoretical model. Cross-sectional TEM observations reveal that both the termination and generation of TDs occur at semicylindrical voids. Plan-view TEM observations reveal a unique behavior of TDs in Ge with semicylindrical voids (i.e., TDs are bent to be parallel to the SEG masks and the Si substrate).

Theoretical calculation and experimental verification are proposed for a reduction of threading dislocation (TD) density in germanium epitaxial layers with semicylindrical voids on silicon. Calculations based on the interaction of TDs and surface via image force, TD measurements, and transmission electron microscope observations of TDs are presented.

硅上半圆柱空隙锗外延层位错还原的理论计算和实验验证

Reduction of threading dislocation density (TDD) in epitaxial germanium (Ge) on silicon (Si) has been one of the most important challenges for the ...

Niobium Oxide Films Deposited by Reactive Sputtering: Effect of Oxygen Flow Rate

Reactive sputtering is a versatile technique used to form compact films with excellent homogeneity. In addition, it allows easy control over deposition parameters such as gas flow rate that results in changes on composition and thus in the film required properties. In this report, reactive sputtering is used to deposit niobium oxide films. A niobium target is used as metal source and different oxygen flow rates to deposit niobium oxide films. The oxygen flow rate was changed from 3 to 10 sccm. The films deposited under low oxygen flow rates show higher electrical conductivity and provide better perovskite solar cells when used as electron transport layer.

Here, we present a protocol for niobium oxide films deposition by reactive sputtering with different oxygen flow rates for use as an electron transport layer in perovskite solar cells.

活性溅射沉积的氧化氮薄膜:氧气流速效应

Reactive sputtering is a versatile technique used to form compact films with excellent homogeneity. In addition, it allows easy control over deposition ...

Fabrication of Thin Film Silver/Silver Chloride Electrodes with Finely Controlled Single Layer Silver Chloride

This paper aims to present a protocol to form smooth and well-controlled films of silver/silver chloride (Ag/AgCl) with designated coverage on top of thin film silver electrodes. Thin film silver electrodes sized 80 &#181;m x 80 &#181;m and 160 &#181;m x 160 &#181;m were sputtered on quartz wafers with a chromium/gold (Cr/Au) layer for adhesion. After passivation, polishing and cathodic cleaning processes, the electrodes underwent galvanostatic oxidation with consideration of Faraday&#39;s Law of Electrolysis to form smooth layers of AgCl with a designated degree of coverage on top of the silver electrode. This protocol is validated by inspection of scanning electron microscope (SEM) images of the surface of the fabricated Ag/AgCl thin film electrodes, which highlights the functionality and performance of the protocol. Sub-optimally fabricated electrodes are fabricated as well for comparison. This protocol can be widely used to fabricate Ag/AgCl electrodes with specific impedance requirements (e.g., probing electrodes for impedance sensing applications like impedance flow cytometry and interdigitated electrode arrays).

This paper aims to present a method to form smooth and well-controlled films of silver chloride (AgCl) with designated coverage on top of thin film silver electrodes.

薄膜银/银氯化银电极的制造，具有精细控制的单层氯化银

This paper aims to present a protocol to form smooth and well-controlled films of silver/silver chloride (Ag/AgCl) with designated coverage on top of thin ...

Epitaxial Nanostructured &alpha;-Quartz Films on Silicon: From the Material to New Devices

In this work, we show a detailed engineering route of the first piezoelectric nanostructured epitaxial quartz-based microcantilever. We will explain all the steps in the process starting from the material to the device fabrication. The epitaxial growth of &#945;-quartz film on SOI (100) substrate starts with the preparation of a strontium doped silica sol-gel and continues with the deposition of this gel into the SOI substrate in a thin film form using the dip-coating technique under atmospheric conditions at room temperature. Before crystallization of the gel film, nanostructuration is performed onto the film surface by nanoimprint lithography (NIL). Epitaxial film growth is reached at 1000 &#176;C, inducing a perfect crystallization of the patterned gel film. Fabrication of quartz crystal cantilever devices is a four-step process based on microfabrication techniques. The process starts with shaping the quartz surface, and then metal deposition for electrodes follows it. After removing the silicone, the cantilever is released from SOI substrate eliminating SiO2 between silicon and quartz. The device performance is analyzed by non-contact laser vibrometer (LDV) and atomic force microscopy (AFM). Among the different cantilever&#8217;s dimensions included in the fabricated chip, the nanostructured cantilever analyzed in this work exhibited a dimension of 40 &#181;m large and 100 &#181;m long and was fabricated with a 600 nm thick patterned quartz layer (nanopillar diameter and separation distance of 400 nm and 1 &#181;m, respectively) epitaxially grown on a 2 &#181;m thick Si device layer. The&#160;measured&#160;resonance frequency was&#160;267 kHz and the estimated quality factor, Q, of the whole mechanical structure was Q ~ 398 under low vacuum conditions. We observed the voltage-dependent linear displacement of cantilever with both techniques (i.e., AFM contact measurement and LDV). Therefore, proving that these devices can be activated through the indirect piezoelectric effect.

Epitaxial Nanostructured &#945;-Quartz Films on Silicon: From the Material to New Devices

This work presents a detailed protocol for the microfabrication of nanostructured &#945;-quartz cantilever on a Silicon-On-Insulator(SOI) technology substrate starting from the epitaxial growth of quartz film with the dip coating method and then nanostructuration of the thin film via nanoimprint lithography.

硅上显性纳米结构α石英薄膜:从材料到新设备

In this work, we show a detailed engineering route of the first piezoelectric nanostructured epitaxial quartz-based microcantilever. We will explain all ...

厚度均匀葛电沉积

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