May 11th, 2019
•This article describes the growth of epitaxial films of Mg3N2 and Zn3N2 on MgO substrates by plasma-assisted molecular beam epitaxy with N2 gas as the nitrogen source and optical growth monitoring.
Related Videos
Molecular Beam Mass Spectrometry With Tunable Vacuum Ultraviolet (VUV) Synchrotron Radiation
Speciation and Bioavailability Measurements of Environmental Plutonium Using Diffusion in Thin Films
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for Cu(In,Ga)Se2 Solar Cells
Focused Ion Beam Fabrication of LiPON-based Solid-state Lithium-ion Nanobatteries for In Situ Testing
Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition
Film Control to Study Contributions of Waves to Droplet Impact Dynamics on Thin Flowing Liquid Films
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
Procedure for the Transfer of Polymer Films Onto Porous Substrates with Minimized Defects