The authors would like to thank R&#252;diger Rosenkranz and Sven Niese (Fraunhofer IKTS-MD) for their assistance in sample preparation, and Ude Hangen, Douglas Stauffer, Ryan Major and Oden Warren (Hysitron Inc.) for their technical support on the PI95 TEM holder. The support of the Center for Advancing Electronics Dresden (cfaed) and the Dresden Center for Nanoanalysis (DCN) at Technische Universit&#228;t Dresden is acknowledged as well.

1. Vorbereitung der Probe für die Focused Ion Beam (FIB) Verdünnung (Abbildung 1) <ol><li> Spaltung des vollständigen Wafers in kleine Chips (~ 10 mm x 10 mm) mit einem Diamantschreiber. </li><li> Markieren Sie die Positionen der &quot;Spitze-Spitze&quot; Struktur auf den Chips. </li><li> Sah den Chip mit einer Plättchenschneidmaschine in Bars von 60 um 2 mm Größe zu erhalten. Die Bar schließt die &quot;Spitze-Spitze&quot; Struktur in der Mitte. </li><li> Kleben Sie die Ziel bar auf einem Cu-Halbring mit dem Sekundenkleber. Als nächstes kleben Sie die Bar auf einer Cu Probentisch auch mit dem Sekundenkleber. Dann Nutzung Silberpaste auf die Leitung zwischen dem Halbring und der Kupferprobe Bühne. Hinweis: Bei der Handhabung der Probe, stellen Sie sicher, tragen Sie immer ein Antistatikarmband, um elektrostatische Entladungen, die die empfindliche Struktur in der Probe beschädigt werden können, zu verhindern. </li></ol> 2. FIB Verdünnung im Rasterelektronenmikroskop (Abbildung 2) <ol><li> Setzen Sie die in Schritt 1 auf eine erhaltene Proben SEM Probentisch und setzen Sie die Stufe vorsichtig in den SEM. </li><li> Wählte die Abscheidung Modus und richten Sie die Maße (Fläche und Dicke) der benötigten Pt Schutzschicht. Verwenden Sie immer eine 30 kV-Ionenstrahl, um die höchste Präzision zu erhalten. Abstimmung der Strom den zufrieden Effizienz in Abhängigkeit von den Abmessungen des benötigten Pt-Schicht zu erhalten. <ol><li> Zahlen Sie Pt Linie auf eine Unterlage zu dem Cu-Stufe (Massepotential) zu kontaktieren. Anschließend hinterlegen eine dicke Pt-Schicht auf der Oberseite der &quot;Spitze-Spitze&quot; Struktur, die sehr wichtig ist, um den Ionen Schaden während des FIB Ausdünnungsprozess zu minimieren und die dünne Lamelle zu verstärken. Dies ist ein Standardverfahren in der FIB Zubereitung verwendet. </li><li> Seien Sie vorsichtig, keine leitende Pfade zwischen den beiden Kontaktflächen auf der Oberseite des &quot;Spitze zu Spitze&quot; Struktur durch die Pt-Schicht bei der Durchführung der Pt Abscheidung vorzustellen. Jede Leiterbahn wird kurz die elektrische Schaltung (2A und B). </li></ol></li><li> FIB-Fräsen <ol><li> Verwenden Sie eine Spannung von 30 kV und einem Strom von 10 pA für den letzten Schnitt. Dünn die Ziel bar in ein H-Träger-TEM-Lamelle mit einer Dicke zwischen 150 und 180 nm. </li><li> Schneiden Sie eine Kerbe in der Nähe der Unterlage (V + pad), die durch einen Wandler in der Spitze TEM berührt wird. Verwenden Sie die Kerbe als Markierung, um die richtige Unterlage in der TEM zu identifizieren. </li></ol></li></ol> 3. Sample Transfer von der SEM auf die TEM <ol><li> Setzen Sie auf die Antistatik-Armband, bevor die Probe berührt. </li><li> Demontieren Sie die vorbereitet H-bar Probe aus dem SEM Bühne. Halten Sie die Probe auf die Cu Bühne, wenn es aus dem SEM zu entfernen. </li><li> Befestigen Sie die Cu Bühne auf die TEM Halter. Bewegen Sie den Wandler Spitze des TEM Halter in der Nähe des Teststruktur (ein paar hundert Mikrometern von der Teststruktur) unter dem Lichtmikroskop. <ol><li> Setzen Sie den Halter in die TEM TEM sorgfältig. Während der tr jede Reinigungsbehandlung (zB Plasmareinigung) nutzen Sie nichtansfer Prozess, ansonsten der Lamelle kann beeinflusst werden. </li></ol></li><li> Halten Sie die Zeit für den Probentransfer innerhalb von 15 min oder kürzer zu viel Exposition gegenüber Umgebungsfeuchtigkeit und Sauerstoff zu vermeiden. </li></ol> 4. elektrischen Anschluss (Abbildung 3) <ol><li> Schließen Sie das TEM Halter, seine Kontrollsystems und der Sourcemeter. Dann schalten Sie die Steuerung und die Sourcemeter. </li><li> Überwachen Sie die Wandlerspitze in der TEM, wenn dabei die grobe Vorgehensweise der Wandlerspitze zu der Teststruktur durch Abstimmung die Knöpfe auf der TEM Halter. <ol><li> Bewegen Sie den Wandler Spitze des TEM Halter in der Nähe der V + Pad (≤ 500 nm). Bringen Sie die Wandlerspitze auf die gleiche Höhe (Z: Höhe) als Unterlage. Stimmen Sie die Position der Spitze und stellen Sie die Spitze vor der Mitte des V + Pad. </li></ol></li><li> Kontaktieren Sie das Wandlerspitze zur V + Pad. Stellen Sie eine sehr niedrige Spannung an der Spitze (0,5 V bis 1 V), während Annäherung an die Unterlage. Überwachen Sie die aktuellen simultaneonuierlich um sicherzustellen, dass der Kontakt hergestellt ist. </li></ol> 5. In Situ TDDB Experiment <ol><li> Verwenden einer Beschleunigungsspannung von 200 kV in der TEM. Bewegen Sie den Elektronenstrahl zu dem Bereich von Interesse; Wählen Sie eine geeignete Vergrößerung und fokussieren Sie das Bild. </li><li> Verwenden geringer Beleuchtung Schritte (≤ 8), um den Strahl Schäden an der Teststruktur zu reduzieren. Verwenden Sie ein Kondensatoröffnung, um den Beleuchtungsbereich nur innerhalb des dünnen Teil der H-bar Probe zu lokalisieren. </li><li> Tragen Sie eine konstante Spannung (≤ 40 V) an der &quot;Spitze-Spitze&quot; Struktur unter Verwendung des Sourcemeter während der Aufnahme die TEM-Aufnahmen in situ (2-3 Bilder / s). Nehmen Sie die Bilder automatisch mit Hilfe eines Selbst Skript-Code, beispielsweise mit Hilfe der DigitalMicrograph Software. </li><li> Pause das Experiment beim Anblick einer scheinbaren Diffusion von Metall in die ULK Dielektrika und tun das Electron spektroskopischen Bildgebung (ESI) chemische Analyse. <ol><li> Setzen Sie den Filter in die Schlitzöffnung Omegein Energiefilter in der TEM. </li><li> Tune die Breite des Filterschlammöffnung, eine richtige Energiebreite (10-20 eV) in der Elektronenenergieverlustspektrum (EELS) zu bekommen. </li><li> Verschieben Sie die Energie an das Kupfer M-Kante Adsorption Höhepunkt in den EELS. </li><li> Zurück zum Bildgebungsmodus, um eine Energie gefiltert TEM-Bild an der Cu M-Kante Absorptionsspitze zu erwerben. </li><li> Verschieben Sie die Energie an die pre-Rand des Kupfer M-Kante und bekommen eine andere Energie gefilterte Bild TEM. </li><li> Korrigieren Sie die Drift der Probe zwischen den beiden Bildern. </li><li> Teilen Sie das erste Bild, das durch die zweite, um den Sprung Verhältnis Bild von Cu zu erhalten. </li></ol></li><li> Fahren Sie mit der TDDB Experiment: erneut eine konstante Spannung (≤ 40 V) an der &quot;Spitze-Spitze&quot; Struktur unter Verwendung des Sourcemeter und notieren Sie die TEM-Aufnahmen. </li></ol> 6. Computertomographie <ol><li> Führen TEM-Computertomographie, wenn die TDDB Experiment beendet ist, um 3D-Informationen über die Verteilung di erhaltenffused Partikel. </li><li> Kippen Sie die Probe und Aufzeichnen einer Neigungsserie von 138 °. Verwenden Sie einen Neigungsschritt von 1 °, und nehmen Sie das Bild bei jedem Schritt im Hellfeld (BF) STEM-Modus. </li><li> Rekonstruktion der Serie (das Ausrichten Bilder, Bestimmung Kippachse, Rekonstruktion Volumen und Segmentierung, um die 3D-Tomographie Volumen zu bilden). </li></ol>

<ol>
	<li>Edelstein, D., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Full+Copper+Wiring+in+a+Sub-0.25+&#181;m+CMOS+ULSI+Technology.">Full Copper Wiring in a Sub-0.25 &#181;m CMOS ULSI Technology.</a> IEDM Tech. Dig. , 773-776 (1997).</li><li>List, S., Bamal, M., Stucchi, M., Maex, K. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=A+global+view+of+interconnects.">A global view of interconnects.</a> Microelectron. Eng. 83 (11/12), 2200-2207 (2006).</li><li>Meindl, J. D., Davis, J. A., Zarkesh-Ha, P., Patel, C. S., Martin, K. P., Kohl, P. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Interconnect+opportunities+for+gigascale+integration.">Interconnect opportunities for gigascale integration.</a> IBM J. Res. Develop. 46 (2/3), 245-263 (2002).</li><li>Zhang, X. F., Wang, Y. W., Im, J. H., Ho, P. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Chip-Package+Interaction+and+Reliability+Improvement+by+Structure+Optimization+for+Ultralow-k+Interconnects+in+Flip-Chip+Packages.">Chip-Package Interaction and Reliability Improvement by Structure Optimization for Ultralow-k Interconnects in Flip-Chip Packages.</a> IEEE Trans. Device Mater. Reliab. 12 (2), 462-469 (2012).</li><li>Lee, K. D., Ogawa, E. T., Yoon, S., Lu, X., Ho, P. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Electromigration+reliability+of+dual-damascene+Cu/porous+methylsilsesquioxane+low+k+interconnects.">Electromigration reliability of dual-damascene Cu/porous methylsilsesquioxane low k interconnects.</a> Appl. Phys. Lett. 82 (13), 2032 (2003).</li><li>Zschech, E., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Stress-induced+phenomena+in+nanosized+copper+interconnect+structures+studied+by+x-ray+and+electron+microscopy.">Stress-induced phenomena in nanosized copper interconnect structures studied by x-ray and electron microscopy.</a> J. Appl. Phys. 106 (9), 093711 (2009).</li><li>Tan, T. L., Hwang, N., Gan, C. L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Dielectric+Breakdown+Failure+Mechanisms+in+Cu-SiOC+low-k+interconnect+system.">Dielectric Breakdown Failure Mechanisms in Cu-SiOC low-k interconnect system.</a> IEEE Trans. Bimodal. 7 (2), 373-378 (2007).</li><li>Zhao, L., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Direct+observation+of+the+1/E+dependence+of+time+dependent+dielectric+breakdown+in+the+presence+of+copper.">Direct observation of the 1/E dependence of time dependent dielectric breakdown in the presence of copper.</a> Appl. Phys. Lett. 98 (3), 032107 (2011).</li><li>Breuer, T., Kerst, U., Boit, C., Langer, E., Ruelke, H., Fissel, A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Conduction+and+material+transport+phenomena+of+degradation+in+electrically+stressed+ultra-low-k+dielectric+before+breakdown.">Conduction and material transport phenomena of degradation in electrically stressed ultra-low-k dielectric before breakdown.</a> J. Appl. Phys. 112 (12), 124103 (2012).</li><li>Lloyd, J. R., Liniger, E., Shaw, T. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Simple+model+for+time-dependent+dielectric+breakdown+in+inter-+and+intralevel+low-k+dielectrics.">Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics.</a> J. Appl. Phys. 98 (8), 084109 (2005).</li><li>Chen, F., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=A+Comprehensive+Study+of+Low-k+SiCOH+TDDB+Phenomena+and+Its+Reliability+Lifetime+Model+Development.">A Comprehensive Study of Low-k SiCOH TDDB Phenomena and Its Reliability Lifetime Model Development.</a> , 46-53 (2006).</li><li>Wu, W., Duan, X., Yuan, J. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Modeling+of+Time-Dependent+Dielectric+Breakdown+in+Copper+Metallization).">Modeling of Time-Dependent Dielectric Breakdown in Copper Metallization).</a> IEEE Trans. Device Mater. Reliab. 3 (2), 26-30 (2003).</li><li>Achanta, R. S., Plawsky, J. L., Gill, W. N. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=A+time+dependent+dielectric+breakdown+model+for+field+accelerated+low-k+breakdown+due+to+copper+ions.">A time dependent dielectric breakdown model for field accelerated low-k breakdown due to copper ions.</a> Appl. Phys. Lett. 91 (23), 234106 (2007).</li><li>Chen, F., Shinosky, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Soft+breakdown+characteristics+of+ultralow-k+time-dependent+dielectric+breakdown+for+advanced+complementary+metal-oxide+semiconductor+technologies.">Soft breakdown characteristics of ultralow-k time-dependent dielectric breakdown for advanced complementary metal-oxide semiconductor technologies.</a> J. Appl. Phys. 108 (5), 054107 (2010).</li><li>Yeap, K. B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=An+Experimental+Methodology+for+the+In-Situ+Observation+of+the+Time-Dependent+Dielectric+Breakdown+Mechanism+in+Copper/Low-k+On-Chip+Interconnect+Structures.">An Experimental Methodology for the In-Situ Observation of the Time-Dependent Dielectric Breakdown Mechanism in Copper/Low-k On-Chip Interconnect Structures.</a> , (2013).</li><li>Yeap, K. B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=In+situ+study+on+low-k+interconnect+time-dependent-dielectric-breakdown+mechanisms).">In situ study on low-k interconnect time-dependent-dielectric-breakdown mechanisms).</a> J. Appl. Phys. 115 (12), 124101 (2014).</li><li>Liao, Z. Q., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=In-situ+Study+of+the+TDDB-Induced+Damage+Mechanism+in+Cu/Ultra-low-k+Interconnect+Structures.">In-situ Study of the TDDB-Induced Damage Mechanism in Cu/Ultra-low-k Interconnect Structures.</a> Microelectron. Eng. In Press, (2014).</li><li>Liao, Z. Q., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=A+New+In+Situ+Microscopy+Approach+to+Study+the+Degradation+and+Failure+Mechanisms+of+Time-Dependent+Dielectric+Breakdown:+Set-Up+and+Opportunities.">A New In Situ Microscopy Approach to Study the Degradation and Failure Mechanisms of Time-Dependent Dielectric Breakdown: Set-Up and Opportunities.</a> Adv. Eng. Mater. 16 (5), 486-493 (2014).</li><li>Lee, Z., Meyer, J. C., Rose, H., Kaiser, U. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Optimum+HRTEM+image+contrast+at+20+kV+and+80+kV-Exemplified+by+graphene.">Optimum HRTEM image contrast at 20 kV and 80 kV-Exemplified by graphene.</a> Ultramicroscopy. 112 (1), 39-46 (2012).</li><li>Bell, D. C., Russo, C. J., Kolmykov, D. V. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=40+keV+atomic+resolution+TEM.">40 keV atomic resolution TEM.</a> Ultramicroscopy. 114, 31-37 (2012).</li><li>Kaiser, U., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Transmission+electron+microscopy+at+20+kV+for+imaging+and+spectroscopy.">Transmission electron microscopy at 20 kV for imaging and spectroscopy.</a> Ultramicroscopy. 111 (8), 1239-1246 (2011).</li><li>Egerton, R. F. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Control+of+radiation+damage+in+the+TEM.">Control of radiation damage in the TEM.</a> Ultramicroscopy. 127, 100-108 (2013).</li><li>Jiang, N. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Damage+mechanisms+in+electron+microscopy+of+insulating+materials.">Damage mechanisms in electron microscopy of insulating materials.</a> J. Phys. D: Appl. Phys. 46, 305502 (2013).</li><li>Buban, J. P., Ramasse, Q., Gipson, B., Browning, N. D., Stahlberg, H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-resolution+low-dose+scanning+transmission+electron+microscopy.">High-resolution low-dose scanning transmission electron microscopy.</a> J. Electron Microsc. 59 (2), 103-112 (2010).</li><li>Egerton, R. F., Li, P., Malac, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Radiation+damage+in+the+TEM+and+SEM.">Radiation damage in the TEM and SEM.</a> Micron. 35 (6), 399-409 (2004).</li></ol>

No competing financial interests.

Voraussetzung für den Erfolg in der TDDB Versuch ist gut Probenaufbereitung, insbesondere in der FIB Mahlvorgang in der SEM. Erstens muss eine dicke Pt-Schicht auf der Oberseite der &quot;Spitze-Spitze&quot; Struktur zu hinterlegen. Die Dicke und die Grße der Pt-Schicht kann durch den SEM Bediener eingestellt werden, sondern müssen drei Prinzipien folgen: (1) Die Dicke und die Größe, um den anvisierten Bereich von möglichen Ionenstrahlschäden während des gesamten Mahlprozesses zu schützen; (2) Es ist noch eine ...

Da Cu-Leiterbahnen wurden zunächst in den ultra-Großintegration (ULSI) Technologie im Jahr 1997 1 eingeführt, low-k- ​​und Ultra-low-k (ULK) Dielektrika sind in die Back-End-of-line verabschiedet (BEoL) als Dämmstoffe zwischen on-Chip-Verbindungen. Die Kombination aus neuen Materialien, zB Cu für reduzierten Widerstand und Low-k / ULK Dielektrika für niedrigere Kapazität, überwindet die Effekte der erhöhten Widerstands-Kapazitäts (RC) Verzögerung durch Verbindungs ​​Maßschrumpfung 2, 3 entstehen. Jedoch wurde dieser Vorteil griffen durch die anhaltende aggressive Skalierung der Mikroelektronik in den letzten Jahren. Die Verwendung von Low-k / ULK Materialien führt in verschiedenen Herausforderungen in das Herstellungsverfahren und für die Zuverlässigkeit des Produkts, insbesondere wenn die Verbindungs ​​Tonhöhe ungefähr 100 nm oder weniger beträgt 4-6. TDDB bezieht sich auf die physikalischen Versagensmechanismus eines dielektrischen Materials als eine Funktion der Zeit,unter einem elektrischen Feld. Die TDDB Zuverlässigkeitstest wird gewöhnlich unter beschleunigten Bedingungen (erhöhte elektrische Feld und / oder erhöhter Temperatur) durchgeführt. Die TDDB in On-Chip-Verbindungsstapel ist einer der kritischsten Ausfallmechanismen für die mikroelektronischen Vorrichtungen, die bereits intensive Bedenken hinsichtlich der Zuverlässigkeit Gemeinschaft angehoben hat. Es wird auch weiterhin im Rampenlicht an Zuverlässigkeit Ingenieure seit ULK Dielektrika mit noch schwächeren elektrischen und mechanischen Eigenschaften werden in die Geräte in Spitzentechnologie-Knoten integriert sein. Dedizierte Experimente wurden durchgeführt, um den Fehlermechanismus TDDB 7-9 zu untersuchen, und ein erheblicher Aufwand investiert wurde, um Modelle, die die Beziehung zwischen dem elektrischen Feld und der Lebensdauer der Vorrichtungen 10-13 beschreiben entwickeln. Die vorhandenen Studien profitieren die Gemeinschaft der Zuverlässigkeit Ingenieure in der Mikroelektronik; jedoch viele challenges noch vorhanden sind und viele Fragen müssen noch im Detail zu beantworten. Zum Beispiel, um bewährte Modelle der physikalischen Versagensmechanismus und Abbaukinetik im TDDB Prozess zu beschreiben und die jeweiligen experimentellen Überprüfung fehlen noch. Als ein besonderer Bedarf wird eine geeignetere Modell benötigt, um die konservative √E-Modell 14 zu ersetzen. Als ein sehr wichtiger Teil des TDDB Untersuchung ist typisch Fehleranalyse vor einer beispiellosen Herausforderung, das heißt, die umfassende und harte Beweise, um die Physik der Ausfallmechanismen und Abbaukinetik zu erklären. Anscheinend Inspektion Millionen von Vias und Meter von nanoskaligen Cu Linien eine nach der anderen, und Ex-situ-Bildgebung der Ausfall Seite ist nicht die richtige Wahl, um diese Hürde Herausforderung, denn es ist sehr zeitaufwendig und nur begrenzte Informationen über die Kinetik der Schadensmechanismus bereitgestellt werden kann. Daher wurde eine dringende Aufgabe entstanden, um eine Entwicklungnd Experimente zu optimieren und um ein besseres Verfahren zu bekommen, um die Versagensmechanismen TDDB und Abbaukinetik zu studieren. In diesem Artikel zeigen wir Ihnen, eine in situ experimentelle Methodik, um die TDDB Fehlermechanismus in Cu / ULK Verbindungsstapel zu untersuchen. Eine TEM mit der Fähigkeit, mit hoher Bildqualität und der chemischen Analyse verwendet, um die kinetischen Prozess auf dedizierte Teststrukturen zu untersuchen. Die in situ-E-Test in den TEM-Experiment integriert, um einen erhöhten elektrischen Feldes an die Dielektrika bereitzustellen. Eine maßgeschneiderte &quot;Spitze-Spitze&quot; Struktur, bestehend aus vollständig gekapselt Cu-Leiterbahnen und isoliert von einem ULK Material wird in der 32-nm-CMOS-Technologie-Knoten ausgelegt. Die hier beschriebenen experimentellen Verfahren kann auch mit anderen Strukturen in der aktiven Geräte erweitert werden.

<table border="0" cellpadding="0" cellspacing="0">
	<tbody>
		<tr>
			<td>Automatic Dicing Saw</td>
			<td>DISCO Kiru-Kezuru-Migaku Technologies</td>
			<td></td>
			<td></td>
		</tr>
		<tr>
			<td>Scanning Electron Microscope</td>
			<td>Zeiss</td>
			<td>Zeiss Nvision 40</td>
			<td></td>
		</tr>
		<tr>
			<td>Picoindentor</td>
			<td>Hysitron</td>
			<td>Hysitron Pi95</td>
			<td></td>
		</tr>
		<tr>
			<td>Keithley SourceMeter</td>
			<td>Keithley</td>
			<td>Keithley 2602/237</td>
			<td></td>
		</tr>
		<tr>
			<td>Transmission Electron Microscope</td>
			<td>FEI</td>
			<td>FEI Tecnai F20</td>
			<td></td>
		</tr>
		<tr>
			<td>Transmission Electron Microscope</td>
			<td>Zeiss</td>
			<td>Zeiss Libra 200</td>
			<td></td>
		</tr>
	</tbody>
</table>

in situ time-dependent dielectric breakdown in the transmission electron microscope: a possibility to understand the failure mechanism in microelectronic devices

The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. The aggressive scaling of feature sizes, both on devices and interconnects, leads to serious challenges to ensure the required product reliability. Standard reliability tests and post-mortem failure analysis provide only limited information about the physics of failure mechanisms and degradation kinetics. Therefore it is necessary to develop new experimental approaches and procedures to study the TDDB failure mechanisms and degradation kinetics in particular. In this paper, an in situ experimental methodology in the transmission electron microscope (TEM) is demonstrated to investigate the TDDB degradation and failure mechanisms in Cu/ULK interconnect stacks. High quality imaging and chemical analysis are used to study the kinetic process. The in situ electrical test is integrated into the TEM to provide an elevated electrical field to the dielectrics. Electron tomography is utilized to characterize the directed Cu diffusion in the insulating dielectrics. This experimental procedure opens a possibility to study the failure mechanism in interconnect stacks of microelectronic products, and it could also be extended to other structures in active devices.

Abbildung 4 zeigt Hellfeld (BF) TEM-Aufnahmen von einer in-situ-Test. Es sind teilweise durchbrochen TaN / Ta Barrieren und bereits bestehende Cu-Atome in den ULK Dielektrika vor dem elektrischen Test (4A) aufgrund längerer Lagerung in Umgebungs. Bereits nach 376 sec bei 40 V, die dielektrische Durchschlags begonnen und wurde mit zwei großen Migrationswege von Kupfer aus der M1 Metalls begleitet, mit einem positiven Potential mit Bezug auf das Masseseite 15-16. Die...

Watch this Scientific Journal Video about In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devi

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. This paper demonstrates the procedure of an in situ TDDB experiment in the transmission electron microscope, which opens a possibility to study the failure mechanism in microelectronic products.

In Situ Zeitabhängige Dielectric Breakdown im Transmissionselektronenmikroskop: eine Möglichkeit, die Fehlermechanismus in mikroelektronischen Bauelementen Verstehen

The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. ...

in-situ-time-dependent-dielectric-breakdown-transmission-electron

Research

JoVE Journal

Engineering

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

8.6K Aufrufe.  Fraunhofer Institute for Ceramic Technologies and Systems. The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. This paper demonstrates the procedure of an in situ TDDB experiment in the transmission electron microscope, which opens a possibility to study the failure mechanism in microelectronic products. 

Serie: In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Revealing Dynamic Processes of Materials in Liquids Using Liquid Cell Transmission Electron Microscopy

The recent development for in situ transmission electron microscopy, which allows imaging through liquids with high spatial resolution, has attracted significant interests across the research fields of materials science, physics, chemistry and biology. The key enabling technology is a liquid cell. We fabricate liquid cells with thin viewing windows through a sequential microfabrication process, including silicon nitride membrane deposition, photolithographic patterning, wafer etching, cell bonding, etc. A liquid cell with the dimensions of a regular TEM grid can fit in any standard TEM sample holder. About 100 nanoliters reaction solution is loaded into the reservoirs and about 30 picoliters liquid is drawn into the viewing windows by capillary force. Subsequently, the cell is sealed and loaded into a microscope for in situ imaging. Inside the TEM, the electron beam goes through the thin liquid layer sandwiched between two silicon nitride membranes. Dynamic processes of nanoparticles in liquids, such as nucleation and growth of nanocrystals, diffusion and assembly of nanoparticles, etc., have been imaged in real time with sub-nanometer resolution. We have also applied this method to other research areas, e.g., imaging proteins in water. Liquid cell TEM is poised to play a major role in revealing dynamic processes of materials in their working environments. It may also bring high impact in the study of biological processes in their native environment.

We have developed a self-contained liquid cell, which allows imaging through liquids using a transmission electron microscope. Dynamic processes of nanoparticles in liquids can be revealed in real time with sub-nanometer resolution.

Verräterische dynamischen Prozesse der Materialwirtschaft in Flüssigkeiten mit Hilfe von flüssigen Zelle Transmission Electron Microscopy

The recent development for in situ transmission electron microscopy, which allows imaging through liquids with high spatial resolution, has attracted ...

Forschung

Ingenieurwesen

Detection and Recovery of Palladium, Gold and Cobalt Metals from the Urban Mine Using Novel Sensors/Adsorbents Designated with Nanoscale Wagon-wheel-shaped Pores

Developing low-cost, efficient processes for recovering and recycling palladium, gold and cobalt metals from urban mine remains a significant challenge in industrialized countries. Here, the development of optical mesosensors/adsorbents (MSAs) for efficient recognition and selective recovery of Pd(II), Au(III), and Co(II) from urban mine was achieved. A simple, general method for preparing MSAs based on using high-order mesoporous monolithic scaffolds was described. Hierarchical cubic Ia3d wagon-wheel-shaped MSAs were fabricated by anchoring chelating agents (colorants) into three-dimensional pores and micrometric particle surfaces of the mesoporous monolithic scaffolds. Findings show, for the first time, evidence of controlled optical recognition of Pd(II), Au(III), and Co(II) ions and a highly selective system for recovery of Pd(II) ions (up to ~95%) in ores and industrial wastes. Furthermore, the controlled assessment processes described herein involve evaluation of intrinsic properties (e.g., visual signal change, long-term stability, adsorption efficiency, extraordinary sensitivity, selectivity, and reusability); thus, expensive, sophisticated instruments are not required. Results show evidence that MSAs will attract worldwide attention as a promising technological means of recovering and recycling palladium, gold and cobalt metals.

Because of the importance and extensive use of palladium, gold and cobalt metals in high-technology equipment, their recovery and recycling constitute an important industrial challenge. The metal recovery system described herein is a simple, low-cost means for the effective detection, removal, and recovery of these metals from the urban mine.

Erkennung und Wiedergewinnung von Palladium, Gold und Kobalt-Metalle aus der Urban-Mine mit Hilfe neuartiger Sensoren / Adsorbentien mit nanoskaligen Wagon-Rad-förmigen Poren Ausgewiesene

Developing low-cost, efficient processes for recovering and recycling palladium, gold and cobalt metals from urban mine remains a significant challenge in ...

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages

Synchrotron radiation micro-tomography (SR&#181;T) is a non-destructive three-dimensional (3D) imaging technique that offers high flux for fast data acquisition times with high spatial resolution. In the electronics industry there is serious interest in performing failure analysis on 3D microelectronic packages, many which contain multiple levels of high-density interconnections. Often in tomography there is a trade-off between image resolution and the volume of a sample that can be imaged. This inverse relationship limits the usefulness of conventional computed tomography (CT) systems since a microelectronic package is often large in cross sectional area 100-3,600 mm2, but has important features on the micron scale. The micro-tomography beamline at the Advanced Light Source (ALS), in Berkeley, CA USA, has a setup which is adaptable and can be tailored to a sample&#39;s properties, i.e., density, thickness, etc., with a maximum allowable cross-section of 36 x 36 mm. This setup also has the option of being either monochromatic in the energy range ~7-43 keV or operating with maximum flux in white light mode using a polychromatic beam. Presented here are details of the experimental steps taken to image an entire 16 x 16 mm system within a package, in order to obtain 3D images of the system with a spatial resolution of 8.7 &#181;m all within a scan time of less than 3 min. Also shown are results from packages scanned in different orientations and a sectioned package for higher resolution imaging. In contrast a conventional CT system would take hours to record data with potentially poorer resolution. Indeed, the ratio of field-of-view to throughput time is much higher when using the synchrotron radiation tomography setup. The description below of the experimental setup can be implemented and adapted for use with many other multi-materials.

For this study synchrotron radiation micro-tomography, a non-destructive three-dimensional imaging technique, is employed to investigate an entire microelectronic package with a cross-sectional area of 16 x 16 mm. Due to the synchrotron&#39;s high flux and brightness the sample was imaged in just 3 min&#160;with an 8.7 &#181;m spatial resolution.

Mit Synchrotronstrahlung Mikrotomographie Mehrskalige Dreidimensionale Mikroelektronische Bauteile zur Untersuchung

Synchrotron radiation micro-tomography (SR&#181;T) is a non-destructive three-dimensional (3D) imaging technique that offers high flux for fast data ...

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.

Umfassende Charakterisierung von ausgedehnten Defekten in Halbleitermaterialien durch ein Rasterelektronenmikroskop

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications ...

Optical Trap Loading of Dielectric Microparticles In Air

We demonstrate a method to trap a selected dielectric microparticle in air using radiation pressure from a single-beam gradient optical trap. Randomly scattered dielectric microparticles adhered to a glass substrate are momentarily detached using ultrasonic vibrations generated by a piezoelectric transducer (PZT). Then, the optical beam focused on a selected particle lifts it up to the optical trap while the vibrationally excited microparticles fall back to the substrate. A particle may be trapped at the nominal focus of the trapping beam or at a position above the focus (referred to here as the levitation position) where gravity provides the restoring force. After the measurement, the trapped particle can be placed at a desired position on the substrate in a controlled manner. 
In this protocol, an experimental procedure for selective optical trap loading in air is outlined. First, the experimental setup is briefly introduced. Second, the design and fabrication of a PZT holder and a sample enclosure are illustrated in detail. The optical trap loading of a selected microparticle is then demonstrated with step-by-step instructions including sample preparation, launching into the trap, and use of electrostatic force to excite particle motion in the trap and measure charge. Finally, we present recorded particle trajectories of Brownian and ballistic motions of a trapped microparticle in air. These trajectories can be used to measure stiffness or to verify optical alignment through time domain and frequency domain analysis. Selective trap loading enables optical tweezers to track a particle and its changes over repeated trap loadings in a reversible manner, thereby enabling studies of particle-surface interaction.

A protocol for launching and stably trapping selected dielectric microparticles in air is presented.

Optische Trap-Laden von Dielectric Mikroteilchen in der Luft

We demonstrate a method to trap a selected dielectric microparticle in air using radiation pressure from a single-beam gradient optical trap. Randomly ...

A Method for Obtaining Serial Ultrathin Sections of Microorganisms in Transmission Electron Microscopy

Observing cells and cell components in three dimensions at high magnification in transmission electron microscopy requires preparing serial ultrathin sections of the specimen. Although preparing serial ultrathin sections is considered to be very difficult, it is rather easy if the proper method is used. In this paper, we show a step-by-step procedure for safely obtaining serial ultrathin sections of microorganisms. The key points of this method are: 1) to use the large part of the specimen and adjust the specimen surface and knife edge so that they are parallel to each other; 2) to cut serial sections in groups and avoid difficulty in separating sections using a pair of hair strands when retrieving a group of serial sections onto the slit grids; 3) to use a 'Section-holding loop' and avoid mixing up the order of the section groups; 4) to use a 'Water-surface-raising loop' and make sure the sections are positioned on the apex of the water and that they touch the grid first, in order to place them in the desired position on the grids; 5) to use the support film on an aluminum rack and make it easier to recover the sections on the grids and to avoid wrinkling of the support film; and 6) to use a staining tube and avoid accidentally breaking the support films with tweezers. This new method enables obtaining serial ultrathin sections without difficulty. The method makes it possible to analyze cell structures of microorganisms at high resolution in 3D, which cannot be achieved by using the automatic tape-collecting ultramicrotome method and serial block-face or focused ion beam scanning electron microscopy.

This study presents reliable and easy procedures for obtaining serial ultrathin sections of a microorganism without expensive equipment in transmission electron microscopy.

Eine Methode für den Erhalt der ultradünnen Serienschnitte von Mikroorganismen im Transmissions-Elektronenmikroskopie

Observing cells and cell components in three dimensions at high magnification in transmission electron microscopy requires preparing serial ultrathin ...

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses

We demonstrate the use of two nuclear-based analytical methods that can follow the modifications of microstructural arrangement of iron-based metallic glasses (MGs). Despite their amorphous nature, the identification of hyperfine interactions unveils faint structural modifications. For this purpose, we have employed two techniques that utilize nuclear resonance among nuclear levels of a stable 57Fe isotope, namely M&#246;ssbauer spectrometry and nuclear forward scattering (NFS) of synchrotron radiation. The effects of heat treatment upon (Fe2.85Co1)77Mo8Cu1B14 MG are discussed using the results of ex situ and in situ experiments, respectively. As both methods are sensitive to hyperfine interactions, information on structural arrangement as well as on magnetic microstructure is readily available. M&#246;ssbauer spectrometry performed ex situ describes how the structural arrangement and magnetic microstructure appears at room temperature after the annealing under certain conditions (temperature, time), and thus this technique inspects steady states. On the other hand, NFS data are recorded in situ during dynamically changing temperature and NFS examines transient states. The use of both techniques provides complementary information. In general, they can be applied to any suitable system in which it is important to know its steady state but also transient states.

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses

Here, we present a protocol to describe ex situ and in situ investigations of structural transformations in metallic glasses. We employed nuclear-based analytical methods which inspect hyperfine interactions. We demonstrate the applicability of M&#246;ssbauer spectrometry and nuclear forward scattering of synchrotron radiation during temperature-driven experiments.

Methoden der Ex-Situ und In Situ Untersuchungen zu strukturellen Veränderungen: der Fall der Kristallisation von metallischen Gläsern

We demonstrate the use of two nuclear-based analytical methods that can follow the modifications of microstructural arrangement of iron-based metallic ...

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

We demonstrate extension of electron-beam lithography using conventional resists and pattern transfer processes to single-digit nanometer dimensions by employing an aberration-corrected scanning transmission electron microscope as the exposure tool. Here, we present results of single-digit nanometer patterning of two widely used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. The method achieves sub-5 nanometer features in poly (methyl methacrylate) and sub-10 nanometer resolution in hydrogen silsesquioxane. High-fidelity transfer of these patterns into target materials of choice can be performed using metal lift-off, plasma etch, and resist infiltration with organometallics.

We use an aberration-corrected scanning transmission electron microscope to define single-digit nanometer patterns in two widely-used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. Resist patterns can be replicated in target materials of choice with single-digit nanometer fidelity using liftoff, plasma etching, and resist infiltration by organometallics.

Einstelligen Nanometer Elektronenstrahl Lithographie mit einem Aberration korrigiert Scan Transmissions-Elektronenmikroskop

We demonstrate extension of electron-beam lithography using conventional resists and pattern transfer processes to single-digit nanometer dimensions by ...

Application of a Coupling Agent to Improve the Dielectric Properties of Polymer-Based Nanocomposites

In this work, an easy, low-cost, and widely applicable method was developed to improve the compatibility between the ceramic fillers and the polymer matrix by adding 3-aminopropyltriethoxysilane (KH550) as a coupling agent during the fabrication process of BaTiO3-P(VDF-CTFE) nanocomposites through solution casting. Results show that the use of KH550 can modify the surface of ceramic nanofillers; therefore, good wettability on the ceramic-polymer interface was achieved, and the enhanced energy storage performances were obtained by a suitable amount of the coupling agent. This method can be used to prepare flexible composites, which is highly desirable for the production of high-performance film capacitors. If an excessive amount of coupling agent is used in the process, the non-attached coupling agent can participate in complex reactions, which leads to a decrease in dielectric constant and an increase in dielectric loss.

Here, we demonstrate a simple and low-cost solution-casting process to improve the compatibility between the filler and the matrix of polymer-based nanocomposites using surface modified BaTiO3 fillers, which can effectively enhance the energy density of the composites.

Anwendung eines Kupplungsmittels zur Verbesserung der dielektrischen Eigenschaften polymerbasierter Nanokompositen

In this work, an easy, low-cost, and widely applicable method was developed to improve the compatibility between the ceramic fillers and the polymer ...

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Resistive switching crossbar architecture is highly desired in the field of digital memories due to low cost and high-density benefits. Different materials show variability in resistive switching properties due to the intrinsic nature of the material used, leading to discrepancies in the field because of underlying operation mechanisms. This highlights a need for a reliable technique to understand mechanisms using nanostructural observations. This protocol explains a detailed process and methodology of in&#160;situ nanostructural analysis as a result of electrical biasing using transmission electron microscopy (TEM). It provides visual and reliable evidence of underlying nanostructural changes in real time memory operations. Also included is the methodology of fabrication and electrical characterizations for asymmetric crossbar structures incorporating amorphous vanadium oxide. The protocol explained here for vanadium oxide films can be easily extended to any other materials in a metal-dielectric-metal sandwiched structure. Resistive switching crossbars are predicted to serve the programmable logic and neuromorphic circuits for next-generation memory devices, given the understanding of the operation mechanisms. This protocol reveals the switching mechanism in a reliable, timely, and cost-effective way in any type of resistive switching materials, and thereby predicts the device&#39;s applicability.

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Presented here is a protocol for analyzing nanostructural changes during in&#160;situ biasing with transmission electron microscopy (TEM) for a stacked metal-insulator-metal structure. It has significant applications in resistive switching crossbars for the next generation of programmable logic circuits and neuromimicking hardware, to reveal their underlying operation mechanisms and practical applicability.

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Basierend auf Mixed-Phased a-VOx