S'identifier

Tongbo Wei

State Key Laboratory of Solid-State Lighting,
Institute of Semiconductors,
State Key Laboratory of Solid-State Lighting, Institute of Semiconductors

Chinese Academy of Sciences

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PUBLICATIONS

Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation.

Nanoscale research letters Jul, 2009 | Pubmed ID: 20596453

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

Optics express Jan, 2011 | Pubmed ID: 21263645

Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes.

Optics express Mar, 2012 | Pubmed ID: 22418563

Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.

Optics express Aug, 2012 | Pubmed ID: 23038492

Layer-by-Layer Approach to (2+1)D Photonic Crystal Superlattice with Enhanced Crystalline Integrity.

Small (Weinheim an der Bergstrasse, Germany) Oct, 2015 | Pubmed ID: 26179658

Recent advancement on micro-/nano-spherical lens photolithography based on monolayer colloidal crystals.

Advances in colloid and interface science Feb, 2016 | Pubmed ID: 26732300

Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy.

Scientific reports 06, 2016 | Pubmed ID: 27340030

Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography.

Nanotechnology Mar, 2017 | Pubmed ID: 28103586

Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate.

Nanoscale Mar, 2018 | Pubmed ID: 29521388

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

Advanced materials (Deerfield Beach, Fla.) Jul, 2018 | Pubmed ID: 29883036

Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire.

Journal of the American Chemical Society 09, 2018 | Pubmed ID: 30175921

Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence.

Nanotechnology Jan, 2019 | Pubmed ID: 30485254

Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si.

Materials (Basel, Switzerland) Nov, 2018 | Pubmed ID: 30486245

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.

Materials (Basel, Switzerland) Dec, 2018 | Pubmed ID: 30518146

Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene.

Advanced materials (Deerfield Beach, Fla.) Jun, 2019 | Pubmed ID: 30993771

Epitaxy of III-Nitrides on β-GaO and Its Vertical Structure LEDs.

Micromachines May, 2019 | Pubmed ID: 31086010

Enhancement of Heat Dissipation in Ultraviolet Light-Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer.

Advanced materials (Deerfield Beach, Fla.) Jul, 2019 | Pubmed ID: 31140651

Enhanced Emission of Deep Ultraviolet Light-Emitting Diodes through Using Work Function Tunable Cu Nanowires as the Top Transparent Electrode.

The journal of physical chemistry letters Apr, 2020 | Pubmed ID: 32141757

INSTITUTIONS

Chinese Academy of Sciences

University of Chinese Academy of Science

JOVE ARTICLES

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Xiang Zhang^*,1,2,

Zhaolong Chen^*,3,

Hongliang Chang^1,2,

Jianchang Yan^1,2,

Shenyuan Yang^2,4,

Junxi Wang^1,2,

Peng Gao⁵,

Tongbo Wei^1,2

¹State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences,

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science,

³Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University,

⁴State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,

⁵Electron Microscopy Laboratory, School of Physics, Peking University

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Tongbo Wei

.css-o250i3{font-size:18px;font-family:Open Sans,sans-serif;line-height:21.6px;}State Key Laboratory of Solid-State Lighting,Institute of Semiconductors,State Key Laboratory of Solid-State Lighting, Institute of Semiconductors

Chinese Academy of Sciences

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

State Key Laboratory of Solid-State Lighting,
Institute of Semiconductors,
State Key Laboratory of Solid-State Lighting, Institute of Semiconductors