Tongbo Wei
State Key Laboratory of Solid-State Lighting,
Institute of Semiconductors,
State Key Laboratory of Solid-State Lighting, Institute of Semiconductors
Chinese Academy of Sciences
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Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation.
Nanoscale research letters Jul, 2009 | Pubmed ID: 20596453
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.
Optics express Jan, 2011 | Pubmed ID: 21263645
Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes.
Optics express Mar, 2012 | Pubmed ID: 22418563
Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.
Optics express Aug, 2012 | Pubmed ID: 23038492
Layer-by-Layer Approach to (2+1)D Photonic Crystal Superlattice with Enhanced Crystalline Integrity.
Small (Weinheim an der Bergstrasse, Germany) Oct, 2015 | Pubmed ID: 26179658
Recent advancement on micro-/nano-spherical lens photolithography based on monolayer colloidal crystals.
Advances in colloid and interface science Feb, 2016 | Pubmed ID: 26732300
Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy.
Scientific reports 06, 2016 | Pubmed ID: 27340030
Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography.
Nanotechnology Mar, 2017 | Pubmed ID: 28103586
Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate.
Nanoscale Mar, 2018 | Pubmed ID: 29521388
High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.
Advanced materials (Deerfield Beach, Fla.) Jul, 2018 | Pubmed ID: 29883036
Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire.
Journal of the American Chemical Society 09, 2018 | Pubmed ID: 30175921
Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence.
Nanotechnology Jan, 2019 | Pubmed ID: 30485254
Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si.
Materials (Basel, Switzerland) Nov, 2018 | Pubmed ID: 30486245
Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.
Materials (Basel, Switzerland) Dec, 2018 | Pubmed ID: 30518146
Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene.
Advanced materials (Deerfield Beach, Fla.) Jun, 2019 | Pubmed ID: 30993771
Epitaxy of III-Nitrides on β-GaO and Its Vertical Structure LEDs.
Micromachines May, 2019 | Pubmed ID: 31086010
Enhancement of Heat Dissipation in Ultraviolet Light-Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer.
Advanced materials (Deerfield Beach, Fla.) Jul, 2019 | Pubmed ID: 31140651
Enhanced Emission of Deep Ultraviolet Light-Emitting Diodes through Using Work Function Tunable Cu Nanowires as the Top Transparent Electrode.
The journal of physical chemistry letters Apr, 2020 | Pubmed ID: 32141757
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Xiang Zhang*,1,2,
Zhaolong Chen*,3,
Hongliang Chang1,2,
Jianchang Yan1,2,
Shenyuan Yang2,4,
Junxi Wang1,2,
Peng Gao5,
Tongbo Wei1,2
1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences,
2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science,
3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University,
4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,
5Electron Microscopy Laboratory, School of Physics, Peking University
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