Fabrication de porte-accordables Devices graphène pour microscopie à effet tunnel études avec Coulomb Impuretés
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11:42 min
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July 24th, 2015
DOI :
July 24th, 2015
•Han Sae Jung1,2, Hsin-Zon Tsai1, Dillon Wong1, Chad Germany1, Salman Kahn1, Youngkyou Kim1,3, Andrew S. Aikawa1, Dhruv K. Desai1, Griffin F. Rodgers1, Aaron J. Bradley1, Jairo Velasco Jr.1, Kenji Watanabe4, Takashi Taniguchi4, Feng Wang1,5,6, Alex Zettl1,5,6, Michael F. Crommie1,5,6
1Department of Physics, University of California at Berkeley, 2Department of Chemistry, University of California at Berkeley, 3Department of Chemical and Biomolecular Engineering, University of California at Berkeley, 4National Institute for Materials Science (Japan), 5Materials Sciences Division, Lawrence Berkeley National Laboratory, 6Kavli Energy NanoSciences Institute, University of California at Berkeley and Lawrence Berkeley National Laboratory
Chapitres dans cette vidéo
0:05
Title
2:28
Chemical Vapor Deposition of Graphene on a Cu Foil
4:28
Poly(methyl methacrylate) Transfer of Graphene onto Hexagonal Boron Nitride / Silicon Dioxide Chip
6:29
STM Tip Calibration on Au(111) Surface
8:30
Scanning Graphene
9:40
Results: STM Topography Reveals Coulomb Impurities on Graphene
10:44
Conclusion
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