Results: I-V Characteristics of a Silicon Nanowire Field Effect Transistor Mode Using Flow-aasisted Dielectrophoresis
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Conclusion
Transcription
The overall goal of this procedure is to demonstrate electric field assistance assembly and selection of high quality semi-conducting nanowires including fabrication of metal electrodes and use of these electrodes in flow-assisted dielectrophoresi
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In this paper, flow assisted dielectrophoresis is demonstrated for the self-assembly of nanowire devices. The fabrication of a silicon nanowire field effect transistor is shown as an example.