analysis-of-contact-interfaces-for-single-gan-nanowire-devices

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit  a strong degradation after annealing due to the  occurrence of void formation at the ...

National Institute of Standards and Technology 

The development of Ni/Au contacts to Mg-doped GaN nanowires (NWs) is examined. Unlike Ni/Au contacts to planar GaN, current-voltage (I-V) measurements of Mg-doped nanowire devices frequently exhibit a strong degradation after annealing in N(2)/O(2). This degradation originates from the poor wetting behavior of Ni and Au on SiO(2) and the excessive void formation that occurs at the metal/NW and metal/oxide interfaces. The void formation can cause cracking and delamination of the metal film as well as reduce the contact area at the metal/NW interface, which increases the resistance. The morphology and composition of the annealed Ni/Au contacts on SiO(2) and the p-GaN films were investigated by scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS) and x-ray diffraction (XRD) measurements. Adhesion experiments were performed in order to determine the degree of adhesion of the Ni/Au films to the SiO(2) as well as observe and analyze the morphology of the film's underside by SEM. Device degradation from annealing was prevented through the use of a specific adhesion layer of Ti/Al/Ni deposited prior to the nanowire dispersal and Ni/Au deposition. I-V measurements of NW devices fabricated using this adhesion layer showed a decrease in resistance after annealing, whereas all others showed an increase in resistance. Transmission electron microscopy (TEM) on a cross-section of a NW with Ni/Au contacts and a Ti/Al/Ni adhesion layer showed a lack of void formation at the contact/NW interface. Results of the XRD and TEM analysis of the NW contact structure using a Ti/Al/Ni adhesion layer suggests Al alloying of the Ni/Au contact increases the adhesion and stability of the metal film as well as prevents excessive void formation at the contact/NW interface.

Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires.

In questa lettera riportiamo la fabbricazione, le caratteristiche del dispositivo e accoppiamento ottico di un dispositivo di due-nanowire nanofili GaN con capacit&agrave; illuminante e fotoconduttiva. Assiale giunzione p-n GaN nanofili erano cresciuti per Epitassia da fasci molecolari, trasferiti in un substrato non-native e selettivamente contattati in forma discrete fonte o rivelatore nanofilo componenti ottici. L&#39;accoppiamento ottico ha dimostrato per questo dispositivo pu&ograve; fornire nuove opportunit&agrave; per integrazione dell&#39;ottica interconnessioni tra sottosistemi elettrici on-chip.

On-chip ottico interconnessioni realizzati con nanofili di nitruro di gallio.

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In this Letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising GaN nanowires with light-emitting and photoconductive capabilities. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy, transferred to a non-native substrate, and selectively contacted to form discrete optical source or detector nanowire components. The optical coupling demonstrated for this device may provide new opportunities for integration of optical interconnects between on-chip electrical subsystems.

On-chip optical interconnects made with gallium nitride nanowires.

Dans cette lettre, nous rapportons sur la fabrication, caract&eacute;ristiques du dispositif et couplage optique d&#39;un dispositif de deux-NANOFIL comprenant des nanofils de GaN avec capacit&eacute;s photoconducteurs et luminescent. Nanofils GaN axial jonction p-n ont &eacute;t&eacute; cultiv&eacute;es par &eacute;pitaxie par jet mol&eacute;culaire, transf&eacute;r&eacute;s &agrave; un substrat non indig&egrave;nes et s&eacute;lectivement contact&eacute;s &agrave; forme optiques source ou d&eacute;tecteur de nanofils composants discrets. Le couplage optique d&eacute;montr&eacute;e pour cet appareil peut-&ecirc;tre offrir des possibilit&eacute;s nouvelles pour l&#39;int&eacute;gration des optiques d&#39;interconnexions entre les sous-syst&egrave;mes &eacute;lectriques sur puce.

Sur puce optique d&#39;interconnexions avec les nanofils de nitrure de gallium.

In diesem Brief berichten wir &uuml;ber die Fabrikation, Ger&auml;teeigenschaften und optische Kopplung von einem zwei-Nanodraht-Ger&auml;t bestehend aus GaN Nanowires mit leuchtende und photoleitende F&auml;higkeiten. Axiale p-n-&Uuml;bergang GaN Nanowires wurden durch Molekularstrahlepitaxie geworden, auf eine nicht-Native-Substrat &uuml;bertragen und selektiv in Form diskreter Quelle oder Detektor Nanodraht Optikkomponenten kontaktiert. Die optische Kopplung demonstrierte f&uuml;r dieses Ger&auml;t kann neue M&ouml;glichkeiten bieten, f&uuml;r die Integration von optischen Verbindungen zwischen on-Chip-elektrische-Subsystemen.

Auf dem Chip optische Verbindungen mit Gallium-Nitrid-Nanodr&auml;hte.

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&#xC774; &#xD3B8;&#xC9C0;&#xC5D0;&#xC11C; &#xC6B0;&#xB9AC;&#xAC00; &#xC81C;&#xC870; &#xC7A5;&#xCE58; &#xD2B9;&#xC131;&#xACFC; &#xBC1C;&#xAD11; &#xBC0F; photoconductive &#xAE30;&#xB2A5;&#xC744; &#xAC04; &#xC815;&#xC744; 2 &#xB098;&#xB178;&#xC640;&#xC774;&#xC5B4; &#xC18C;&#xC790;&#xC758; &#xAD11;&#xD559; &#xCEE4;&#xD50C;&#xB9C1;&#xC5D0; &#xB300; &#xD55C; &#xBCF4;&#xACE0;&#xC11C;. &#xCD95; p-n &#xC811;&#xD569; GaN &#xC815; &#xD588;&#xB2E4; &#xBD84;&#xC790; &#xBE54; &#xD53C;&#xC5D0; &#xC758;&#xD574; &#xC131;&#xC7A5; &#xB418; &#xACE0; &#xAE30;&#xBCF8;&#xC774; &#xC544;&#xB2CC; &#xAE30;&#xD310;&#xC5D0; &#xC804;&#xC1A1; &#xC591;&#xC2DD; &#xC774;&#xC0B0; &#xAD11; &#xC18C;&#xC2A4; &#xB610;&#xB294; &#xAC80;&#xCD9C;&#xAE30; &#xB098;&#xB178;&#xC640;&#xC774;&#xC5B4; &#xAD6C;&#xC131; &#xC694;&#xC18C;&#xB97C; &#xC120;&#xD0DD;&#xC801;&#xC73C;&#xB85C; &#xC5F0;&#xB77D;. &#xAD11; &#xCEE4;&#xD50C;&#xB9C1;&#xC774; &#xC7A5;&#xCE58;&#xC5D0; &#xB300; &#xD55C; &#xAC80;&#xC99D; &#xB41C; &#xAD11;&#xC758; &#xD1B5;&#xD569; &#xCE69;&#xC5D0; &#xC804;&#xAE30; &#xD558;&#xC704; &#xC2DC;&#xC2A4;&#xD15C; &#xC0AC;&#xC774;&#xC758; &#xC0C1;&#xD638; &#xC5F0;&#xACB0;&#xC744; &#xC704;&#xD55C; &#xC0C8;&#xB85C;&#xC6B4; &#xAE30;&#xD68C;&#xB97C; &#xC81C;&#xACF5;&#xD560; &#xC218; &#xC788;&#xC2B5;&#xB2C8;&#xB2E4;.

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En esta carta nos informe sobre el acoplamiento &oacute;ptico de un dispositivo de dos-Nanocable GaN nanocables con capacidades fotoconductora y emisi&oacute;n de luz, fabricaci&oacute;n y caracter&iacute;sticas del dispositivo. Axial p-n GaN nanohilos fueron cultivadas por epitaxia de haces moleculares, transferidos a un sustrato no nativos y selectivamente contact&oacute; a forma discretos fuente o detector Nanocable componentes &oacute;pticos. El acoplamiento &oacute;ptico demostrada para este dispositivo puede proporcionar nuevas oportunidades para la integraci&oacute;n de los medios &oacute;pticos interconexiones entre subsistemas el&eacute;ctricos en el chip.

Paul T. Blanchard

Quantum Electronics and Photonics Division

National Institute of Standards and Technology

Analysis of Contact Interfaces for Single GaN Nanowire Devices