Accedi

Max Planck Institute for Solid State Research

2 ARTICLES PUBLISHED IN JoVE

Engineering

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Mohammad Rashidi^1,2, Wyatt Vine¹, Jacob A.J. Burgess^3,4,5, Marco Taucer^1,2,6, Roshan Achal¹, Jason L. Pitters², Sebastian Loth^3,4, Robert A. Wolkow^1,2

¹Department of Physics, University of Alberta, ²National Institute for Nanotechnology, National Research Council of Canada, Edmonton, ³Max Planck Institute for the Structure and Dynamics of Matter, ⁴Max Planck Institute for Solid State Research, ⁵Department of Physics and Astronomy, University of Manitoba, ⁶Joint Attosecond Science Laboratory, University of Ottawa

We demonstrate an all-electronic method to observe nanosecond-resolved charge dynamics of dopant atoms in silicon with a scanning tunneling microscope.

JoVE Core

Electric-field Control of Electronic States in WS₂ Nanodevices by Electrolyte Gating

Feng Qin¹, Toshiya Ideue¹, Wu Shi², Yijin Zhang^3,4, Ryuji Suzuki¹, Masaro Yoshida⁵, Yu Saito¹, Yoshihiro Iwasa^1,5

¹Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, ²Materials Sciences Division, Lawrence Berkeley National Laboratory, ³Institute of Scientific and Industrial Research, Osaka University, ⁴Max Planck Institute for Solid State Research, ⁵RIKEN Center for Emergent Matter Science (CEMS)

Here, we present a protocol to control the carrier number in solids by using the electrolyte.