この作業によって賄われていた一部国立科学財団のグラント号DMR-0420785 (XPS)。X 線回折の材料特性、(MC)2、xps は、援助及びミシガン大学・ ヴァン ・ Vlack 研究室のミシガン州大学ミシガン センターをありがちましょう。我々 もバルク材料の準備で彼の援助のトーマス ・ Kratofil に感謝したいと思います。

注意: は、必要な個人用保護具 (PPE) 先の閉じた靴、フルの長さのズボン、安全メガネ、微粒子ろ過マスク、白衣、手袋など酸化物粉末ポーズ皮膚接触の刺激性および眼との接触刺激のリスクとして着用します。PPE の追加要件の開始する前にすべての関連化学物質等安全データ シートを参照してください。合成は、ヒューム フードなどエンジニア リング コントロールの使用されるべきであります。
1. 一括エントロピー安定化酸化物の合成
<ol><li>
酸化物粉末の質量計算
	<ol>
<li>構成の二元系酸化物の平均密度の適切なボリュームを乗じてターゲットの総目的の質量を推定します。 <img alt="Equation 3" src="/files/ftp_upload/57746/57746eq3v2.jpg"> <img alt="Equation 4" src="/files/ftp_upload/57746/57746eq4.jpg"> どこ<img alt="Equation 5" src="/files/ftp_upload/57746/57746eq5.jpg">と<img alt="Equation 6" src="/files/ftp_upload/57746/57746eq6.jpg">はモル分率と密度、<img alt="Equation 7" src="/files/ftp_upload/57746/57746eq7.jpg">番目のコンポーネント。"1 (2.54 cm) の直径、1/8"(0.3175 cm) 厚いサンプルでは、ターゲット ・ ボリュームは<img alt="Equation 8" src="/files/ftp_upload/57746/57746eq8.jpg">1.7 cm3。</li>
		<li>構成の二元系酸化物の平均モル質量でこのターゲット質量を割ることによって、各コンポーネントの必要なほくろを決定します。 <img alt="Equation 9" src="/files/ftp_upload/57746/57746eq9v2.jpg"> <img alt="Equation 10" src="/files/ftp_upload/57746/57746eq10.jpg"> <img alt="Equation 11" src="/files/ftp_upload/57746/57746eq11.jpg">のモル質量は、<img alt="Equation 7" src="/files/ftp_upload/57746/57746eq7.jpg">番目のコンポーネント。ほくろの数を変換する<img alt="Equation 12" src="/files/ftp_upload/57746/57746eq12.jpg">、によってグラムに戻る <img alt="Equation 13" src="/files/ftp_upload/57746/57746eq13.jpg"> 注: 成分とここで合成材料のターゲット組成物の質量は、表 1および2で与えられます。</li>
	</ol>
</li>
	<li>
粉体の前処理
	<ol>
<li>20 ml の王水 (硝酸溶液3 + 3 HCl) のエッチングによる瑪瑙乳棒と乳鉢をきれい。モルタルに酸を注ぐし、下部がクリアされるまで、乳棒で粉をひきます。酸の適切に廃棄、水ですすいでください。</li>
		<li>MgO の 0.559 g、CoO の 1.103 g、NiO の 1.035 g、cuo、1.103 g ときれいなモルタル (モル組成) の酸化亜鉛粉末の 1.129 g を組み合わせます。</li>
		<li>20 ターンの間時計回りに動きを使用して粉を挽くクリーン乳棒を使用して、反時計回りに 20 ターンします。少なくとも 45 分使用モルタルの辺から粉末を削除して、モルタルの中心まで粉をブラシにきれいな金属ヘラのこのプロセスを繰り返します。 注意: 完全では粉体の混合と粉砕粉と同種とグレー-ブラック色で、細かく表示されます地面と滑らかな感じ。</li>
		<li>輸送のためのきれいな、密閉式コンテナーに粉を転送します。</li>
	</ol>
</li>
	<li>
セラミック ペレット プレス 注意: は、組立金型とプレスの使用中手袋と安全メガネを着用します。きれいな紙表面に金型全体の洗浄・組立の手順を実行します。使用されるコンポーネントは、図 2のとおりです。<ol>
<li>側面と鉱物油を持つ金型の下に小プランジャー (図 2 aと2bの標識 C) の内面に注油、死ぬシリンダー底と同じ高さになるまで挿入します。</li>
		<li>金型の側面が覆われているように、金型のキャビティに重量を量る紙をロールバックします。金型の下に粉を注ぐ。金型から落ちる小さなピストンさせずに、任意の空気のポケットを削除し、粉体のレベルにカウンターの部分が軽きます。重量紙を慎重に取り外します。</li>
		<li>粉体、スラリーを形成する金型のキャビティにアセトンの少量を追加します。これにより、ターゲットが圧力の下では、ボイドの形成を阻害する粒子流。</li>
		<li>パラフィン オイル、粉末を邪魔しないように注意している側面とプランジャー (図 2 aと2bのパート B) の内部の表面を塗ります。この部分を金型に挿入します。図 2 c上部と下部のプレートなどで描かれて組み立てられた金型をプレス機に配置 (図 2 aのパーツ Dと2 b) 平らな表面を提供します。</li>
		<li>冷たい金型プレス金型を配置します。200 MPa に到達するまでは、プレスのアームをポンプします。20 分間の圧縮された状態で座っているプレスを許可します。圧力は、粉体の密度を高め、時間がリラックスされます。プレスの間 200 MPa を維持するために必要な圧力を追加します。ダイからリークが発生任意の過剰の溶媒をぬぐいます。</li>
		<li>プレス圧力を解放します。トップとボトム プレートを慎重に取り外します。図 2 cに示すように、シースの除去と除去ピストンを配置します。押されたターゲットを公開する前にアセンブリから小さなダイ部分の取り外しをゆっくりと押します。ターゲットは金型から公開されるまで、アセンブリを慎重に押します。緑色の体と焼結用るつぼへの転送を慎重に取り外します。</li>
	</ol>
</li>
	<li>
セラミック焼結 注意: ターゲット材は高温から急冷されます。熱い炉からるつぼを削除するときは、耐熱手袋、顔面シールドを着用します。<ol>
<li>押された粉末を合わせてアルミナるつぼを取得し、2 mm の層のイットリア安定化ジルコニア (YSZ) 0.1-0.2 mm のビーズします。コート YSZ ビーズるつぼの底。 注: コーティングは、ターゲットがるつぼの底を接触しないように厚さ約 2 mm をする必要があります。</li>
		<li>ゆっくりと慎重に押されたターゲットをるつぼのセンターに転送します。</li>
		<li>焼結炉、るつぼを輸送金属トングを使用して、慎重に。50 ° C 分-11100 ° C に温度を上げます。空気中で 1,100 ° C で 24 時間のためのターゲットを焼結します。</li>
		<li>1100 ° C で炉からるつぼを削除します。常温の水でターゲットを癒すトングを使用して、迅速に。ターゲットは 30 〜 のスパッタが s、水からそれを除去し、乾燥する設定。</li>
		<li>ターゲットは涼しく、乾燥、一度ターゲット密度を測定し、理論値と比較して<img alt="Equation 14" src="/files/ftp_upload/57746/57746eq14v2.jpg">、パート 1 で計算されます。以前は、使用されるバランスの対象の質量を測定し、ノギスを使用して寸法を測定します。測定密度推定値と比<img alt="Equation 15" src="/files/ftp_upload/57746/57746eq15.jpg">、パーセントの理論的な密度を与えます。 注: 合成後密度は通常理論的な密度の約 80% です。</li>
		<li>高密度、乳棒と乳鉢を使用して焼結体ターゲットをリグラインド認定品、ステップ 1.2.3 から一括合成手順を繰り返します。第 2 焼結後ターゲットの密度を決定します。 注: 通常実測密度は<img alt="Equation 16" src="/files/ftp_upload/57746/57746eq16.jpg">理論的な密度、パルス レーザー蒸着 (PLD) に適しています。</li>
	</ol>
</li>
</ol>2. ESO 単結晶薄膜の PLD
<ol><li>
ターゲットの準備
	<ol>
<li>手順 1 で合成した一括セラミックペレット今、蒸着ソース (ターゲット) として機能します。表面が反射し、均一になるまで SiC ペーパーのプログレッシブ (320/600/800/1,200) コーングリッツを使用して円動きでターゲットを磨きます。</li>
		<li>チャンバー内回転カルーセルにターゲットを配置し、光パスの最終ターゲットに ~ 2 cm × 2 cm やけど紙切れを配置します。</li>
		<li>ターゲットでシングル ショットを発射し、両方の軸にまたがるマークを燃やす結果を測定、レーザーのスポット径を測定します。スポット サイズが正しくない場合は、焦点レンズ (図 3 a) を調整します。0.27 × 0.24 cm 両方の軸で、楕円を達成するまで、測定スポット サイズを調整します。</li>
		<li>書き込み用紙を取り除き、避難のためのドアを閉じます。荒 6.7 圧ポンプ ドライ スクロールを使用して部屋を避難 Pa、その時点でターボ ポンプは最大 1,000 Hz のレート分社化ことができます。</li>
		<li>少なくとも 1.3 x 10 の基本圧チャンバーをポンプでくむ-5 Pa イオン計によって測定されます。達すると、成長中に処理ガスの使用を許可するように 200 Hz の速度にターボを減らします。</li>
	</ol>
</li>
	<li>
基板の準備
	<ol>
<li>単結晶をきれいな、1 つの側面の研磨、半導体グレード トリクロロ エチレン (TCE)、半導体グレードのアセトン、高純度イソプロパノール (IPA) で、2 分間超音波処理による 0.5 mm 厚い MgO 基板。</li>
		<li>超乾燥、圧縮の N2ガスを基板を吹き飛ばす、熱導電性銀塗料の少量の基板プラテン (図 3 b) に基板を取り付けます。熱基板と銀塗料を治すためにホット プレート上で 10 分間 ° C にプラテン。</li>
		<li>場所商工会議所で搬送アームに基板ホルダー ロードロック、シールし、-4ペンシルバニア少なくとも 1.3 x 10 の圧力にチャンバーをポンプでくむ外部転送ツールを使用してください。</li>
		<li>成長室に 2 つの仕切弁を開き、基板プラテンにヒーター アセンブリ配置する搬送アームを使用して基板を転送します。</li>
		<li>ロード ロックに搬送アームを撤回し、ゲートをシールします。商工会議所の上にねじアセンブリを使用してヒーターを下げます。</li>
	</ol>
</li>
	<li>
レーザー エネルギーとフルエンス 注: 成膜は、248 nm の KrF エキシマ パルス レーザーから照射で有効です。レーザー パルス幅は 〜 20 ns。<ol>
<li>測定エネルギー メーターを使用してレーザーのエネルギーは、(図 3 a) 商工会議所に入る前にビームのパスに配置されます。2 Hz のレートで 50 パルスとフォト ダイオードを照射後平均エネルギーを決定します。</li>
		<li>± 10 mJ 安定平均パルス エネルギー 310 mJ に到達するまでレーザーの励起電圧が異なります。レーザー室に渡すことを許可するようにビーム パスからエネルギー メーターを削除します。 注: は、10% の室内窓のレーザーの減衰を使用して、上記の設定は 2.55 J cm-2のフルエンスを与えます。本研究では基板ターゲットまでの距離は 7 cm です。異なる基板ターゲットの違いには、理想的な成膜条件と成長率を変更できます。</li>
	</ol>
</li>
	<li>
蒸着
	<ol>
<li>成長する前に dehydroxylize MgO 結晶の表面に真空状態でのレートの 30 ° C 分-1で 30 分間 1,000 ° C に基板を加熱します。30 ° 分-1 300 ° C に温度を下げるし、10 分間平衡することができます。 注: 私たちの報告された温度は、ヒーター ブロック内熱電対によって決定されます。</li>
		<li>フローの超高純度 (99.999%)O 6.7 の圧力に到達する商工会議所に2ガス ペンシルバニア州 注: 酸素チャンバーに流入圧力が barotron ゲージを使用して測定します。成長の間に燃焼室圧力を安定化させる閉ループ システムの一部として、質量流量コント ローラーを使用して、ガスを導入します。</li>
		<li>残り汚染物のターゲットをきれいにし前の切除によって成長のためにそれらを準備します。選択したターゲットをラスターに設定、回転、レーザー打つではない同じ場所たびに、基板シャッターが閉じている、5 Hz のレートで 2,000 パルス ターゲットをアブレーションことを確認します。 注: ターゲットは準備が整いましたと成膜システムが適切な条件 (温度、圧力、フルエンス)。</li>
		<li>堆積前にシャッターを開きます。これらの条件は、6 Hz で 10,000 パルスは ~ 80 nm の厚膜を生成します。 注: この成長率は前の作業16の x 線反射率によって決定されます。</li>
		<li>堆積後 133 に酸素分圧を高める Pa (1.0 torr) 酸素空孔形成を阻害します。10 ° 分 1 で 40 ° C にサンプル温度を下げます。40 ° C に達すると、酸素の流れ開閉、圧力の安定化後、成長室と負荷ロック間のゲート弁。ヒーターを持ち上げ、搬送アームを使用して、アセンブリがロード ロックに戻ってから基板プラテンを削除します。</li>
		<li>雰囲気に読み込みロックを発散し、外部転送ツールを使用してサンプルを削除します。残り銀ペンキ取りにかみそりの刃とポーランド プラテンを使用し、材料を堆積したプラテンからサンプルを削除します。2.2 追加フィルムの成長のための段階から手順を繰り返します。</li>
	</ol>
</li>
</ol>

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MDC Vacuum Products | Vacuum Components, Chambers, Valves, Flanges &amp; Fittings Available from: <a target="_blank" href="https://mdcvacuum.com/DisplayContentPageFull.aspx?cc=b8ca254a-cdc0-4b71-8603-af10ce18bbcb">https://mdcvacuum.com/DisplayContentPageFull.aspx?cc=b8ca254a-cdc0-4b71-8603-af10ce18bbcb</a> (2018)</li><li>Dijkkamp, D., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Preparation+of+Y-Ba-Cu+oxide+superconductor+thin+films+using+pulsed+laser+evaporation+from+high+Tc+bulk+material.">Preparation of Y-Ba-Cu oxide superconductor thin films using pulsed laser evaporation from high Tc bulk material.</a> Appl Phys Lett. 51 (8), 619-621 (1987).</li><li>Biegalski, M. D., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Relaxor+ferroelectricity+in+strained+epitaxial+SrTiO3+thin+films+on+DyScO3+substrates.">Relaxor ferroelectricity in strained epitaxial SrTiO3 thin films on DyScO3 substrates.</a> Appl Phys Lett. 88 (19), 192907 (2006).</li><li>Schlom, D. G., Chen, L. Q., Pan, X., Schmehl, A., Zurbuchen, M. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=A+Thin+Film+Approach+to+Engineering+Functionality+into+Oxides.">A Thin Film Approach to Engineering Functionality into Oxides.</a> J Am Ceram Soc. 91 (8), 2429-2454 (2008).</li><li>Damodaran, A. R., Breckenfeld, E., Chen, Z., Lee, S., Martin, L. 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何を開示する必要があります。

我々 は説明しているし、単一 (Mg0.25(1-x)CoxNi0.25(1-x)0.25(1-x)Cu Zn0.25(1-x)) の結晶薄膜のバルクと高品質の合成のためのプロトコルを示す O (x = 0.20、0.27、0.33) と (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)xCu Zn0.25(1-x)) O (x = 0.11 0.27) エントロピー安定化酸化物。以上の開発とフィールドの拡大に発見されたが、エントロピー安定化酸化?...

2004 年に、高エントロピーの金属合金の発見以来高エントロピー材料プロパティの増加などの硬度1,2,3、靭性4,のため関心が高まっています。5、および腐食抵抗3,6。最近では、材料の愛好家のための大規模な遊び場開放高エントロピー酸化物7,8とホウ化物9が発見されています。酸化物、特に、強誘電性10、モウ11,12、熱電13、超伝導14 など役に立つと動的機能プロパティを示すことができます。.エントロピー安定化酸化物 (ESOs) は、興味深い、組成に依存した機能性15,16材料のこの新しいクラスを作る、重要な障害にもかかわらずを所有する最近示されています。特にエキサイティングです。
エントロピー安定材料が化学的に同質な成分 (通常 5 つまたはより多くの成分を持つ)、単相材料、形態的エントロピー貢献 (<img alt="Equation 1" src="/files/ftp_upload/57746/57746eq1.jpg">) ギブス自由エネルギーに (<img alt="Equation 2" src="/files/ftp_upload/57746/57746eq2.jpg">) は重要単一の形成を駆動する十分な相固溶体17です。どこカチオン性の形態的障害が組成、温度、成膜速度を正確に制御を必要とする陽イオンのサイトにわたって観察される、多成分の ESOs の合成率を消すし、クエンチ温度7,16.このメソッドは、純粋な位相を合成する能力の開業医と化学的に均質なエントロピー-安定化酸化物セラミック ペレット相純粋な単一結晶、フラット薄膜目的の化学量論を有効にするしようとします。バルク材料以上の 90% 理論密度電子、磁気、および構造特性の研究を有効にすると合成することができます。 または薄膜物理気相蒸着 (PVD) 技術のソースとして使用します。ここでは考慮するエントロピー安定化酸化物 5 陽イオン、分子線エピタキシー (MBE 法) またはスパッタリング共同など、5 つのソースを用いる薄膜 PVD 技術を持っているため化学的に均質な薄膜を堆積の挑戦が表示されます。ドリフトをフラックス。このプロトコルは、フラット (~0.15 nm のルート二乗平均平方根 (RMS) 粗さ) エントロピー安定化酸化物薄膜単一材料のソースから公称化学組成を持っている示されている化学的に均質な単結晶の結果します。この薄膜合成プロトコルは、その場で電子または合成のリアルタイム モニタ リングと洗練された品質管理の光学特性評価技術の包含によって高めかもしれない。このメソッドの予想される制限の 1 μ m 以下に高品質膜厚が制限される場合レーザー エネルギー ドリフトから生じます。
成長と薄膜酸化物材料10,18,19,20,21, 立体構造との相関関係の特性の大幅な進歩にもかかわらず、酸化物の電子構造は、一見取るに足りない方法論の違いから生じる最終的な素材の差につながります。さらに、多成分系のエントロピー安定化酸化物のフィールドは文学7,16薄膜合成の唯一の 2 つの現在のレポートで、むしろ新生です。ESOs は特に化学気相成長と分子線エピタキシー法で提示される課題を回避、このプロセスに自分自身を貸します。ここで、バルクの詳細な合成プロトコルを提供 ESOs (図 1)、薄膜材料の処理の難しさ、意図しないプロパティのバリエーションを最小限に抑えるためとフィールドの発見の加速度を向上させます。

<table border="0" cellpadding="0" cellspacing="0" width="754">
	<tbody>
		<tr height="20">
			<td height="20" style="height:20px;width:379px;">MAGNESIUM OXIDE 99.95%</td>
			<td style="width:180px;">Fisher</td>
			<td style="width:131px;">AA1468422</td>
			<td style="width:64px;"></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">COBALT(II) OXIDE, 99.995%</td>
			<td>Fisher</td>
			<td>AA4435414</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">NICKEL(II) OXIDE 99.998%</td>
			<td>Fisher</td>
			<td>AA1081914</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">COPPER(II) OXIDE 99.995%</td>
			<td>Fisher</td>
			<td>AA1070014</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">ZINC OXIDE 99.99%</td>
			<td>Fisher</td>
			<td>AA8781230</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">TRICHLROETHLENE SEMICNDTR 9</td>
			<td>Fisher</td>
			<td>AA39744K7</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">ACETONE SEMICNDTR GRD 99.5%</td>
			<td>Fisher</td>
			<td>AA19392K7</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">2-PROPANOL ACS 99.5%</td>
			<td>Fisher</td>
			<td>A416S4</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Mineral oil, pure</td>
			<td>Acros Organics</td>
			<td>AC415080010</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">alumina crucible</td>
			<td>MTI Corporation</td>
			<td>eq-ca-l50w40h20</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">ZIRCONIA (YSZ) GRINDING MEDIA</td>
			<td>Inframat Advanced Materials</td>
			<td>4039GM-S010</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">SiC paper 320/600/800/1200</td>
			<td>South Bay Technology</td>
			<td>SDA08032-25</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">MgO (100) substrate, 5x5x0.5 mm, 1SP</td>
			<td>MTI Corporation</td>
			<td>MGa050505S1</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">OXYGEN COMPRESSED ULTRA HIGH PURITY GRADE, 99.999%</td>
			<td>Cryogenic Gases</td>
			<td>OXYUHP</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">NITROGEN COMPRESSED EXTRA DRY GRADE</td>
			<td>Cryogenic Gases</td>
			<td>NITEX</td>
			<td></td>
		</tr>
	</tbody>
</table>

bulk and thin film synthesis of compositionally variant entropy-stabilized oxides

ここで、バルク、薄膜多成分 (Mg0.25(1-x)CoxNi0.25(1-x)0.25(1-x)Cu Zn0.25(1-x)) の合成手順を紹介 O (Co のバリアント) と (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x)) O (Cu のバリアント) エントロピー安定化酸化物。純粋な化学的に均一な相 (Mg0.25(1-x)CoxNi0.25(1-x)0.25(1-x)Cu Zn0.25(1-x)) O (x = 0.20、0.27、0.33) と (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x)) O (x = 0.11 0.27) セラミックペレットは合成され、「純粋な単一の結晶薄膜ターゲットの化学量論の相、超高品質の成膜に使用されます。滑らかで、化学的に均質なエントロピー安定化酸化物薄膜の (001) 配向 MgO 基板上へのパルス レーザー堆積法による沈着量の詳細な方法について説明しています。相およびバルク薄膜材料の結晶性とは、x 線回折を使用して確認されています。X 線光電子分光およびエネルギー分散 x 線の分光法による組成と化学的均一性を確認します。走査プローブ顕微鏡による薄膜の表面形状を測定します。高品質の合成、単結晶、エントロピー安定化酸化物薄膜により、インターフェイス、サイズ、歪み、および障害に及ぼす高無秩序化酸化物のこの新しいクラスのプロパティの研究。

両方の準備 (Mg0.25(1-x)CoxNi0.25(1-x)0.25(1-x)Cu Zn0.25(1-x)) の x 線回折 (XRD) のスペクトルがとられた O (x = 0.20、0.27、0.33) と (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)Xcu Zn0.25(1-x)) O (x = 0.11 0.27) バルク セラミックス (図 4 a) と (図 4 b) 薄膜を作製しました。これらのデ?...

Watch this Scientific Journal Video about Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides at JoVE.com

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

高品質バルク ・薄膜 (Mg0.25(1-x)CoxNi0.25(1-x)0.25(1-x)Cu Zn0.25(1-x)) の合成 O と (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)xCu Zn0.25(1-x)) エントロピー安定化酸化物を提示します。

バルクと組成バリエーション エントロピー安定化酸化物薄膜合成

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and ...

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9.4K ビュー.  University of Michigan. 高品質バルク ・薄膜 (Mg0.25(1-x)CoxNi0.25(1-x)0.25(1-x)Cu Zn0.25(1-x)) の合成 O と (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)xCu Zn0.25(1-x)) エントロピー安定化酸化物を提示します。

ビデオ: Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.
The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.
To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 &mu;m thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint.
To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23&deg;C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.
Introduction
Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested.
Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10.
The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.

Polycrystalline silicon thin-film solar cells on glass are fabricated by deposition of boron and phosphorous doped silicon layers followed by crystallisation, defect passivation and metallisation. Plasmonic light-trapping is introduced by forming Ag nanoparticles on the silicon cell surface capped with a diffused reflector resulting in ~45% photocurrent enhancement.

プラズモニック·強化されたライトトラップによる多結晶シリコン薄膜太陽電池

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

工学

Nanomoulding of Functional Materials, a Versatile Complementary Pattern Replication Method to Nanoimprinting

We describe a nanomoulding technique which allows low-cost nanoscale patterning of functional materials, materials stacks and full devices. Nanomoulding combined with layer transfer enables the replication of arbitrary surface patterns from a master structure onto the functional material. Nanomoulding can be performed on any nanoimprinting setup and can be applied to a wide range of materials and deposition processes. In particular we demonstrate the fabrication of patterned transparent zinc oxide electrodes for light trapping applications in solar cells.

We describe a nanomoulding technique which allows low-cost nanoscale patterning of functional materials, materials stacks and full devices. Nanomoulding can be performed on any nanoimprinting setup and can be applied to a wide range of materials and deposition processes.

機能材料のNanomoulding、ナノインプリントへ多目的相補パターンレプリケーション方法

We describe a nanomoulding technique which  allows low-cost nanoscale patterning of functional materials, materials stacks  and full devices. Nanomoulding ...

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

Nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas allows the deposition of metal oxides with tunable morphology, structure, density and stoichiometry by a proper control of the plasma plume expansion dynamics. Such versatility can be exploited to produce nanostructured films from compact and dense to nanoporous characterized by a hierarchical assembly of nano-sized clusters. In particular we describe the detailed methodology to fabricate two types of Al-doped ZnO (AZO) films as transparent electrodes in photovoltaic devices: 1) at low O2 pressure, compact films with electrical conductivity and optical transparency close to the state of the art transparent conducting oxides (TCO) can be deposited at room temperature, to be compatible with thermally sensitive materials such as polymers used in organic photovoltaics (OPVs); 2) highly light scattering hierarchical structures resembling a forest of nano-trees are produced at higher pressures. Such structures show high Haze factor (&gt;80%) and may be exploited to enhance the light trapping capability. The method here described for AZO films can be applied to other metal oxides relevant for technological applications such as TiO2, Al2O3, WO3 and Ag4O4.

We describe the experimental method to deposit nanostructured oxide thin films by nanosecond Pulsed Laser Deposition (PLD) in the presence of a background gas. By using this method Al-doped ZnO (AZO) films, from compact to hierarchically structured as nano-tree forests, can be deposited.

パルスレーザー蒸着法によるナノエンジニアリング透明導電性酸化物の作製

Nanosecond Pulsed  Laser Deposition (PLD) in the presence of a background gas allows the deposition  of metal oxides with tunable morphology, structure, ...

Fabrication of Spatially Confined Complex Oxides

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from the inherent strong electron correlations that reside within them. These materials can also possess electronic phase separation in which regions of vastly different resistive and magnetic behavior can coexist within a single crystal alloy material. By reducing the scale of these materials to length scales at and below the inherent size of the electronic domains, novel behaviors can be exposed. Because of this and the fact that spin-charge-lattice-orbital order parameters each involve correlation lengths, spatially reducing these materials for transport measurements is a critical step in understanding the fundamental physics that drives complex behaviors. These materials also offer great potential to become the next generation of electronic devices 1-3. Thus, the fabrication of low dimensional nano- or micro-structures is extremely important to achieve new functionality. This involves multiple controllable processes from high quality thin film growth to accurate electronic property characterization. Here, we present fabrication protocols of high quality microstructures for complex oxide manganite devices. Detailed descriptions and required equipment of thin film growth, photo-lithography, and wire-bonding are presented.

We describe the use of pulsed laser deposition (PLD), photolithography and wire-bonding techniques to create micrometer scale complex oxides devices. The PLD is utilized to grow epitaxial thin films. Photolithography and wire-bonding techniques are introduced to create practical devices for measurement purposes.

空間的に閉じ込められた複合酸化物の作製

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from ...

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto silicon (Si) substrates via different synthesized temperatures by using plasma enhanced chemical vapor deposition (PECVD) system. The effects of different synthesized temperatures on the crystal structure, surface morphologies and optical properties have been investigated. The X-ray diffraction (XRD) patterns indicated that the intensity of (0002) diffraction peak became stronger with increasing synthesized temperature until 400 oC. The diffraction intensity of (0002) peak gradually became weaker accompanying with appearance of (10-10) diffraction peak as the synthesized temperature up to excess of 400 oC. The RT photoluminescence (PL) spectra exhibited a strong near-band-edge (NBE) emission observed at around 375 nm and a negligible deep-level (DL) emission located at around 575 nm under high c-axis ZnO thin films. Field emission scanning electron microscopy (FE-SEM) images revealed the homogeneous surface and with small grain size distribution. The ZnO thin films have also been synthesized onto glass substrates under the same parameters for measuring the transmittance.
For the purpose of ultraviolet (UV) photodetector application, the interdigitated platinum (Pt) thin film (thickness ~100 nm) fabricated via conventional optical lithography process and radio frequency (RF) magnetron sputtering. In order to reach Ohmic contact, the device was annealed in argon circumstances at 450 oC by rapid thermal annealing (RTA) system for 10 min. After the systematic measurements, the current-voltage (I-V) curve of photo and dark current and time-dependent photocurrent response results exhibited a good responsivity and reliability, indicating that the high c-axis ZnO thin film is a suitable sensing layer for UV photodetector application.

We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

プラズマによる高c軸ZnO薄膜の合成とキャラクタリゼーションは、化学気相堆積システムとそのUV光検出器アプリケーションを強化しました

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto ...

Iridium Oxide-reduced Graphene Oxide Nanohybrid Thin Film Modified Screen-printed Electrodes as Disposable Electrochemical Paper Microfluidic pH Sensors

A facile, controllable, inexpensive and green electrochemical synthesis of IrO2-graphene nanohybrid thin films is developed to fabricate an easy-to-use integrated paper microfluidic electrochemical pH sensor for resource-limited settings. Taking advantages from both pH meters and strips, the pH sensing platform is composed of hydrophobic barrier-patterned paper micropad (&#181;PAD) using polydimethylsiloxane (PDMS), screen-printed electrode (SPE) modified with IrO2-graphene films and molded acrylonitrile butadiene styrene (ABS) plastic holder. Repetitive cathodic potential cycling was employed for graphene oxide (GO) reduction which can completely remove electrochemically unstable oxygenated groups and generate a 2D defect-free homogeneous graphene thin film with excellent stability and electronic properties. A uniform and smooth IrO2 film in nanoscale grain size is anodically electrodeposited onto the graphene film, without any observable cracks. The resulting IrO2-RGO electrode showed slightly super-Nernstian responses from pH 2-12 in Britton-Robinson (B-R) buffers with good linearity, small hysteresis, low response time and reproducibility in different buffers, as well as low sensitivities to different interfering ionic species and dissolved oxygen. A simple portable digital pH meter is fabricated, whose signal is measured with a multimeter, using high input-impedance operational amplifier and consumer batteries. The pH values measured with the portable electrochemical paper-microfluidic pH sensors were consistent with those measured using a commercial laboratory pH meter with a glass electrode.

The study demonstrates the growth of iridium oxide-reduced graphene oxide (IrO2-RGO) nanohybrid thin films on irregular and rough screen-printed carbon substrate through a green electrochemical synthesis, and their implementation as a pH sensor with a patterned paper-fluidic platform.

使い捨て電気化学紙のマイクロ流体のpHセンサーとしてイリジウム酸化還元グラフェン酸化物ナノハイブリッド薄膜変更されたスクリーン印刷電極

A facile, controllable, inexpensive and green electrochemical synthesis of IrO2-graphene nanohybrid thin films is developed to fabricate an easy-to-use ...

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices have used devices prepared by spin coating, a process that is not amenable to large-scale fabrication. This mismatch in device fabrication makes it difficult to translate quantitative results obtained in the laboratory to the commercial level, making optimization difficult. Using a mini-slot die coater, this mismatch can be resolved by translating the commercial process to the laboratory and characterizing the structure formation in the active layer of the device in real time and in situ as films are coated onto a substrate. The evolution of the morphology was characterized under different conditions, allowing us to propose a mechanism by which the structures form and grow. This mini-slot die coater offers a simple, convenient, material efficient route by which the morphology in the active layer can be optimized under industrially relevant conditions. The goal of this protocol is to show experimental details of how a solar cell device is fabricated using a mini-slot die coater and technical details of running in situ structure characterization using the mini-slot die coater.

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Here, we present a protocol to fabricate organic thin film solar cells using a mini-slot die coater and related in-line structure characterizations using synchrotron scattering techniques.

バルクヘテロ接合太陽電池の印刷作製と<em&gt;その場で</em&gt;形態キャラクタリゼーション

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices ...

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity

A method for investigating recombination dynamics of photo-induced charge carriers in thin film semiconductors, specifically in photovoltaic materials such as organo-lead halide perovskites is presented. The perovskite film thickness and absorption coefficient are initially characterized by profilometry and UV-VIS absorption spectroscopy. Calibration of both laser power and cavity sensitivity is described in detail. A protocol for performing Flash-photolysis Time Resolved Microwave Conductivity (TRMC) experiments, a non-contact method of determining the conductivity of a material, is presented. A process for identifying the real and imaginary components of the complex conductivity by performing TRMC as a function of microwave frequency is given. Charge carrier dynamics are determined under different excitation regimes (including both power and wavelength). Techniques for distinguishing between direct and trap-mediated decay processes are presented and discussed. Results are modelled and interpreted with reference to a general kinetic model of photoinduced charge carriers in a semiconductor. The techniques described are applicable to a wide range of optoelectronic materials, including organic and inorganic photovoltaic materials, nanoparticles, and conducting/semiconducting thin films.

A Time Resolved Microwave Conductivity technique for investigating direct and trap-mediated recombination dynamics and determining carrier mobilities of thin film semiconductors is presented here.

時間分解マイクロ波伝導を介して、薄膜太陽電池材料での再結合ダイナミクス

A method for investigating recombination dynamics of photo-induced charge carriers in thin film semiconductors, specifically in photovoltaic materials ...

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for Cu(In,Ga)Se2 Solar Cells

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction of degradation mechanisms and prevention of module field failure can consequently decrease investment risks as well as increase the electricity yield. An improved knowledge level can for these reasons significantly decrease the total costs of PV electricity. 
In order to better understand and minimize the degradation of PV modules, the occurring degradation mechanisms and conditions should be identified. This should preferably happen under combined stresses, since modules in the field are also simultaneously exposed to multiple stress factors. Therefore, two 'Combined Stress test with in situ measurement' setups have been designed and constructed. These setups allow the simultaneous use of humidity, temperature, illumination, and electrical biases as independently controlled stress factors on solar cells and minimodules. The setups also allow real-time monitoring of the electrical properties of these samples. This protocol presents these setups and describes the experimental possibilities. Moreover, results obtained with these setups are also presented: various examples about the influence of both deposition and degradation conditions on the stability of thin film Cu(In,Ga)Se2 (CIGS) as well as Cu2ZnSnSe4 (CZTS) solar cells are described. Results on the temperature dependency of CIGS solar cells are also presented.

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells

Two &#39;Combined Stress test with in situ measurement&#39; setups, which allow real-time monitoring of accelerated degradation of solar cells and modules, were designed and constructed. These setups allow the simultaneous use of humidity, temperature, electrical biases, and illumination as independently controlled stress factors. The setups and various experiments executed are presented.

その場で太陽電池とモジュールの加速劣化のモニタリング: Cu (In, Ga) Se2太陽電池に関するケーススタディ

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction ...

Simultaneous Multi-surface Anodizations and Stair-like Reverse Biases Detachment of Anodic Aluminum Oxides in Sulfuric and Oxalic Acid Electrolyte

After reporting on the two-step anodization, nanoporous anodic aluminum oxides (AAOs) have been widely utilized in the versatile fields of fundamental sciences and industrial applications owing to their periodic arrangement of nanopores with relatively high aspect ratio. However, the techniques reported so far, which could be only valid for mono-surface anodization, show critical disadvantages, i.e., time-consuming as well as complicated procedures, requiring toxic chemicals, and wasting valuable natural resources. In this paper, we demonstrate a facile, efficient, and environmentally clean method to fabricate nanoporous AAOs in sulfuric and oxalic acid electrolytes, which can overcome the limitations that result from conventional AAO fabricating methods. First, plural AAOs are produced at one time through simultaneous multi-surfaces anodization (SMSA), indicating mass-producibility of the AAOs with comparable qualities. Second, those AAOs can be separated from the aluminum (Al) substrate by applying stair-like reverse biases (SRBs) in the same electrolyte used for the SMSAs, implying simplicity and green technological characteristics. Finally, a unit sequence consisting of the SMSAs sequentially combined with SRBs-based detachment can be applied repeatedly to the same Al substrate, which reinforces the advantages of this strategy and also guarantees the efficient usage of natural resources.

A protocol for fabricating nanoporous anodic aluminum oxides via simultaneous multi-surfaces anodization followed by stair-like reverse biases detachments is presented. It can be applied repeatedly to the same aluminum substrate, exhibiting a facile, high-yield, and environmentally clean strategy.

同時マルチ表面 Anodizations、階段のような逆バイアスで硫酸陽極酸化アルミニウムとシュウ酸電解質の剥離

After reporting on the two-step anodization, nanoporous anodic aluminum oxides (AAOs) have been widely utilized in the versatile fields of fundamental ...

バルクと組成バリエーションエントロピー安定化酸化物薄膜合成

要約

さらに動画を探す

この動画の章

プラズモニック·強化されたライトトラップによる多結晶シリコン薄膜太陽電池

機能材料のNanomoulding、ナノインプリントへ多目的相補パターンレプリケーション方法

パルスレーザー蒸着法によるナノエンジニアリング透明導電性酸化物の作製

空間的に閉じ込められた複合酸化物の作製

プラズマによる高c軸ZnO薄膜の合成とキャラクタリゼーションは、化学気相堆積システムとそのUV光検出器アプリケーションを強化しました

使い捨て電気化学紙のマイクロ流体のpHセンサーとしてイリジウム酸化還元グラフェン酸化物ナノハイブリッド薄膜変更されたスクリーン印刷電極

バルクヘテロ接合太陽電池の印刷作製と

時間分解マイクロ波伝導を介して、薄膜太陽電池材料での再結合ダイナミクス

その場で太陽電池とモジュールの加速劣化のモニタリング: Cu (In, Ga) Se₂太陽電池に関するケーススタディ

同時マルチ表面 Anodizations、階段のような逆バイアスで硫酸陽極酸化アルミニウムとシュウ酸電解質の剥離

バルクと組成バリエーション エントロピー安定化酸化物薄膜合成

要約

さらに動画を探す

この動画の章

プラズモニック·強化されたライトトラップによる多結晶シリコン薄膜太陽電池

機能材料のNanomoulding、ナノインプリントへ多目的相補パターンレプリケーション方法

パルスレーザー蒸着法によるナノエンジニアリング透明導電性酸化物の作製

空間的に閉じ込められた複合酸化物の作製

プラズマによる高c軸ZnO薄膜の合成とキャラクタリゼーションは、化学気相堆積システムとそのUV光検出器アプリケーションを強化しました

使い捨て電気化学紙のマイクロ流体のpHセンサーとしてイリジウム酸化還元グラフェン酸化物ナノハイブリッド薄膜変更されたスクリーン印刷電極

バルクヘテロ接合太陽電池の印刷作製と

時間分解マイクロ波伝導を介して、薄膜太陽電池材料での再結合ダイナミクス

その場で太陽電池とモジュールの加速劣化のモニタリング: Cu (In, Ga) Se2太陽電池に関するケーススタディ

同時マルチ表面 Anodizations、階段のような逆バイアスで硫酸陽極酸化アルミニウムとシュウ酸電解質の剥離

バルクと組成バリエーションエントロピー安定化酸化物薄膜合成

その場で太陽電池とモジュールの加速劣化のモニタリング: Cu (In, Ga) Se₂太陽電池に関するケーススタディ