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Center of Materials Science and Optoelectronics Engineering
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Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene.
Advanced materials (Deerfield Beach, Fla.) Jun, 2019 | Pubmed ID: 30993771
Atomic mechanism of strong interactions at the graphene/sapphire interface.
Nature communications 11, 2019 | Pubmed ID: 31676774
University of Chinese Academy of Science
Chinese Academy of Sciences
Xiang Zhang*,1,2,
Zhaolong Chen*,3,
Hongliang Chang1,2,
Jianchang Yan1,2,
Shenyuan Yang2,4,
Junxi Wang1,2,
Peng Gao5,
Tongbo Wei1,2
1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences,
2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science,
3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University,
4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,
5Electron Microscopy Laboratory, School of Physics, Peking University
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