probing-c84-embedded-si-substrate-using-scanning-probe-microscopy

Probing C<sub>84</sub>-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

This paper reports an array-designed C84-embedded Si substrate fabricated using a controlled self-assembly method in an ultra-high vacuum chamber. The ...

National Chung-Shan Institute of Science and Technology

This study examines the intramolecular structures of individual fullerene molecules on a Si(111)-7 x 7 surface using an ultra-high vacuum scanning tunneling microscope. This study also discusses possible configurations of fullerene molecules with related orientations and electronic states of fullerene. A self-assembled layer of fullerene on a Si(111) surface is produced using special annealing treatments. The resulting electronic states and band gap energy can be estimated from I-V curves. Finally the field emission parameters, such as turn-on field and field enhancement factor beta, are determined using a traditional detecting system.

Chih-Pong Huang

Metallurgy Section,
Materials & Electro-Optics Research Division,
Metallurgy Section, Materials & Electro-Optics Research Division

National Chung-Shan Institute of Science and Technology

Probing C₈₄-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Chih-Pong Huang

.css-o250i3{font-size:18px;font-family:Open Sans,sans-serif;line-height:21.6px;}Metallurgy Section,Materials & Electro-Optics Research Division,Metallurgy Section, Materials & Electro-Optics Research Division

National Chung-Shan Institute of Science and Technology

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Metallurgy Section,
Materials & Electro-Optics Research Division,
Metallurgy Section, Materials & Electro-Optics Research Division

Probing C₈₄-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics