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JoVE Journal

Engineering

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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

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09:45 min

December 2nd, 2013

December 2nd, 2013

7,176 Views

0:05

Title

1:32

Surface Cleaning

2:50

Monolayer Formation

3:43

Nanowire Synthesis

5:02

Nanowire Drop-casting onto Substrate and Rapid Thermal Anneal

6:24

Sheet Resistance Measurements, Nanowire Device Fabrication and Characterization

8:03

Results: Sheet Resistance Measurements and Nanowire FET I-V Curves Using Monolayer Contact Doped Materials

9:08

Conclusion

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

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