1. Yüzey Hazırlığı <ol><li> 1 cm bir silisyum dan x 1 cm lik silikon yüzeyler Cut, Silikon SEM karakterizasyonu (düzlem görünümü ve kesit) için iyidir. </li><li> 1 cm x 1 cm cam (soda-kireç, 1 mm kalınlığında) kesin, cam, optik ve elektriksel karakterizasyonu için en iyi yöntemdir. </li><li> Kontaklar cam yüzeylerde gerekirse, Au kişileri bir maske kullanılarak vakumda buharlaştırıldı edilebilir. Mevduat Au, Au mevduat 50 nm yapışma geliştirmek için bir tabaka olarak Cr 10 nm. </li><li> (Örneğin Etilen tetrafloroetilen, ETFE) 1 cm x 1 cm polimer örneği kesin. </li><li> 5-10 dakika isopropanol sonicating tarafından substratları temizleyin ve N 2 akış kullanılarak kuru izopropanol içinde durulayın. </li></ol> 2. Lazer Parametrelerinin Lazer Hizalama ve Seçimi <ol><li> Nd Isınma: YAG lazer ve dördüncü harmonik jeneratör (FHG) kullanarak seçin IV harmonik emisyonu (266 nm dalgaboyu) iki se tarafından oluşturulankaskad cond harmonik üreticilerinin (SHG). </li><li> % 2 wt monte edin. Al 2 O 3:. Hedef manipülatör üzerinde ZnO dairesel bir hedef (2 &quot;çap) hedef dönme ve öteleme başlar ve maksimum dikey aralığını ayarlamak, hedefin merkezinde lazer nokta hizalama lazer nokta dış temas asla emin olun. çelik halka hedef düzeltmek için kullanılır. hedef tüm hedef yüzeyinin üniform ablasyonu için bir roto-öteleme hareketi ile taşınır. </li><li> Tekrarlama oranı (örneğin 10 Hz) ve darbe enerjisi (örneğin 75 mJ) seçin. Bir güç ölçer ile darbe enerjisi ve monitör lazer kararlılığı ayarlayın. </li><li> Seçilen bir konuma odaklama lens taşı ve nokta boyutunu ölçmek için hedef bağlı duyarlı bir kağıt kullanın. Kağıt üzerinde odaklama lens yangın 1-5 lazer atış herhangi bir pozisyon için. Yaklaşık 1 J / cm 2 bir lazer fluence sahip bir mercek konumu seçin. </li></ol> 3. Bir PLD ayarlamaBiriktirme Parametreler d Seçimi <ol><li> Substrat pozisyon Yerleşimi <ol><li> Uyum testleri için bir substrat olarak 2 &quot;çapında yaklaşık dairesel bir kağıdı takın. </li><li> Bir hedef-substrat mesafe d TS = 50 mm substrat tutucu taşıyın. </li><li> Vakum seviyesi 10 -2 Pa ulaşana kadar birincil ve turbomoleküler pompalarla odasının aşağı pompalama başlayın </li><li> Bir gaz türü (oksijen) seçin ve uygun gaz basıncı (4. ve 5. bölümlere bakınız) için hız ve gaz akışı pompalama ayarlayın. Dairesel bir korona boyunca homojen bir tabaka kalınlığı elde etmek için tüy merkezine göre alt tabaka manipülatör eksen dışı bölgesinin xy pozisyonunu ayarlar. </li><li> Işın stoper / güç metre kaldırarak ablasyon başlayın. Hedef yeni ya da uzun bir süre için kullanılan değilse, bu ön-ablasyon hedefi temizlemek için gerekli ise. </li><li> Depozito pape görülebilir zaman ablasyon Durdurr bir görünüm bakarak. </li></ol></li><li> Plazma bulutunun uzunluğu tayini <ol><li> Adımları 3.1.1 izleyin. 3.1.5 etmek, ablasyon sırasında 0.5 ile bir dijital fotoğraf makinesi ile fotoğraf çekmek - 1 sn birikme süresini ortalama farklı plazma bulutları üzerinde. </li><li> Bir referans (bkz. Şekil 3) olarak d TS alarak resimlerden görünür plazma bulutunun uzunluğunu ölçün. </li></ol></li><li> Film kalınlığı kalibrasyonu <ol><li> Hedef (yani 100 mm ve daha fazla) uzak substrat Taşı ve hedeften d TS eşit mesafede Kuvars Mikro-Dengesi (QCM) hareket ettirin. </li><li> Mevduat 1000 lazer çekim (yani 1 &#39;40&#39;&#39;) ve yatırılan kütle değerini ölçmek, sonra uzak QCM taşıyın. </li><li> 1.1 &#39;de olduğu gibi, bir Si alt tabaka monte edin. </li><li> Bir test örneği Depozito (örn. 18,000 lazer çekim, yani 30 &#39;) ve c kesit SEM görüntüleri kullanmakçökelme hızı (nm / pulse) alibrate. </li></ol></li></ol> 4. Nanoengineered AZO Filmleri çökelmesi <ol><li> Yapışkan bant kullanılarak numune tutucu manipülatör bölüm 1 deki gibi hazırlanmış yüzeylere monte edin. </li><li> 3.1.3 - 3.1.2 adımları izleyin. </li><li> Substrat dönüşünü başlatınız. </li><li> Kompakt AZO filmler çökelmesi <ol><li> 20 sccm (basıncı 10 -2 Pa aralığında) az 75-100 W ve Ar gaz akı 100 eV, RF güç iyon silah ve set iyon enerji açın. Ar Temiz yüzeylerde + 5-10 dk iyon silah. Temizleme işleminden yakın gaz giriş sonra ve Argon kaldırmak için odasına aşağı pompalayınız. </li><li> Oksijen gaz takın ve 2 Pa oksijen olması hız ve gaz akı pompalama ayarlayın. </li><li> 18,000 çekim (30 &#39;) için ablasyon ve mevduat başlar. Adım 3.2 &#39;de tayin edildiği gibi tüy uzunluğu aynı olduğu ablasyon kontrolü sırasında. </li><li> durdurmak ablasyon, yakın ggiriş olarak, odasının aşağı pompalayınız. </li></ol></li><li> Hiyerarşik AZO filmler çökelmesi <ol><li> Oksijen gaz takın ve 160 Pa oksijen olması hız ve gaz akışı pompalama ayarlayın. </li><li> 18,000 çekim (30 &#39;) için ablasyon ve mevduat başlar. Adım 3.2 &#39;de tayin edildiği gibi tüy uzunluğu aynı olduğu ablasyon kontrolü sırasında. </li><li> odasının aşağı pompalayınız, ablasyon, yakın gaz girişi durur. </li></ol></li><li> Odasının havasını ve örnekleri kaldırmak </li></ol> 5. Elektrikli ve Optik Karakterizasyonu <ol><li> Dört nokta tekniği (yani Van der Pauw metodu) kullanılarak düzlem-taşınım özellikleri ölçün. Rehber bir şeması için Şekil 4&#39;e bakın. Prob akım tipik değerleri 10 mA ile 1 uA bulunmaktadır. Ölçümler daha iyi bir sabit kalıp kalınlığı (yaklaşık% 5) sağlamak için 0.7 cm x 0.7 cm indirgenmiş örnek alan üzerinde gerçekleştirilir. </li><li> Optika ölçünNumunenin ve çıplak alt tabaka geçirgenliği l. Cam / filmi arabirimi 1 ila yoğunluğunu ayarlayarak substrat katkısı spektrumları düzeltin. Kesin bir düzeltme prosedürü için örnek olay ışın bakan cam yüzey ile monte edildiğinden emin olun. 400-700 nm aralığında ortalama transmitans hesaplayarak görünür ışık şeffaflık belirleyin. Işık dağınık kısmını ölçmek için bir 150 mm çaplı entegre küre kullanın Haze faktör toplam iletilen ışık (yani dağınık ve ileriye bulaşan) tarafından dağınık fraksiyonu bölerek hesaplanabilir, Şekil 5&#39;e bakınız. </li></ol>

<ol>
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Çıkar çatışması ilan etti.

Plazma tüy şekli, özellikle bir gaz varlığında, yakından ablasyon süreci ile ilgili olup, görsel muayene ile plazma tüy izlenmesi tortu kontrol etmek önemlidir. Bir oksit hedef ablasyonu bir metal oksit yatırma zaman, oksijen ablasyon esnasında oksijen kayıpları desteklemek için gereklidir. Düşük oksijen arka gaz basıncı ise, biriken malzemenin oksijen boş olabilir. Bu etki, gaz basıncının artırılması ile azaltılır. Morfolojisi gaz karışımları (: O 2 veya O: yani Ar ...

Pulsed Laser Deposition (PLD) bir film (bkz. Şekil 1) 1 büyümek için bir alt-tabaka üzerinde biriken edilebilir kesilen tür bir plazma oluşumu ile sonuçlanan bir katı hedef lazer ile kesip alma kullanmaktadır. Bir arka plan atmosfer (inert ya da reaktif) ile etkileşim gaz fazı (bkz. Şekil 2) 2,3 küme içinde homojen çekirdekleşme indüklemek için kullanılır. PLD tarafından malzeme sentezi için stratejimiz dikkatle PLD sürecinde oluşturulan plazma dinamikleri kontrol ederek aşağıdan yukarıya yaklaşım malzeme özelliklerini ayarlama dayanmaktadır. Küme boyutu, kinetik enerji ve kompozisyon 4,5 morfolojik ve yapısal değişiklikler film büyüme ve sonucu etkiler birikimi parametrelerinin uygun bir ayar tarafından değiştirilebilir. Istismar ederek yöntemi biz (örn. WO 3, Ag 4 O 4, Al 2 O 3 oksitlerin bir dizi için, gösterdi burada açıklanannd TiO 2), nano 6-11 az malzeme yapısını değiştirerek morfolojisi ayarlamak için yeteneği, yoğunluk, porozite, yapısal düzeni, stokiyometri ve faz derecesi. Bu, belirli uygulamalar için 12-16 malzeme oluşturulmasını sağlar. Fotovoltaik uygulamalar için referans ile, hiyerarşik boya duyarlı güneş hücreleri photoanodes olarak istihdam ettiği 13 ilginç sonuçlar gösteren bir &#39;ağaç ormanı&#39; benzer bir nano-ve mesostructure (DSSC toplanmasını nanopartiküller (&lt;10 nm) tarafından düzenlenen nanoyapılı TiO 2 sentezlenmiş ) 17. Bu daha önceki sonuçlara dayanarak biz bir saydam iletken oksit gibi Al-katkılı ZnO (AZO) filmlerin depolanması için protokol açıklar. Şeffaf iletken oksitler (TCOS) özdirenç &lt;10 -3 ohm-cm ve% 80&#39;den fazla optik transmitral gösteren yüksek bandaralıklı (&gt; 3 eV) ağır doping tarafından iletkenler dönüştürülmüş malzemeler vardırgörünür aralığında ttance. Bunlar dokunmatik ekranlar ve güneş hücreleri 18-21 gibi birçok uygulama için önemli bir unsur olan ve genellikle böyle sıçratma, darbeli lazer çöktürme, kimyasal buhar biriktirme, sprey piroliz ve çözüm odaklı kimyasal yöntemlerle gibi farklı teknikler ile yetiştirilmektedir. TCOS arasında, indiyum-kalay oksit (ITO) yaygın olan düşük direnç için çalışılmıştır, ancak yüksek maliyet ve indiyum düşük kullanılabilirlik dezavantajı muzdarip. Araştırma şimdi böyle F-katkılı SnO 2 (FTO), Al-katkılı ZnO (AZO) ve F-katkılı ZnO (FZO) olarak indiyum-free sistemler yolunda ilerliyor. Olay ışığın akıllı yönetimi (ışık yakalayıcı) sağlayabilen Elektrotlar fotovoltaik uygulamalar için özellikle ilginçtir. Işığın dalga boyu (örn. 300-1,000 nm), iyi bir kontrol ile karşılaştırılabilir bir ölçekte modüle yapıları ve morfolojileri ile saçtı imkanı yararlanabilmesi içinfilmin morfolojisi ve küme montaj mimarileri üzerinde gereklidir. Özellikle biz morfolojisi ve AZO filmler yapısı ayarlamak nasıl açıklar. Kompakt AZO düşük basınçlı (2 Pa oksijen) &#39;de ve oda sıcaklığında depolanmıştır, düşük özdirenç (4,5 x 10 -4 ohm cm) ve AZO yüksek sıcaklıklarda tevdi ile rekabet görünür ışık şeffaflık (&gt;% 90) ile karakterize iken AZO hiyerarşik yapı Bu yapılar 80 ve% 22,23 daha fazla pus faktör ile güçlü bir ışık saçılması yeteneği yukarı göstermek 100 Pa yukarıda O 2 basınçta ablasyonu ile elde edilir.

<table border="1"><tbody><tr><td> Reaktif / Malzeme Adı </td><td> Şirket </td><td> Katalog Numarası </td></tr><tr><td> Pulsed Lazer </td><td> Continuum-Quantronix </td><td> PowerLite 8010 </td></tr><tr><td> Güç ölçer </td><td> Tutarlı </td><td> FieldMaxII-TO </td></tr><tr><td> İyon Gun </td><td> Mantis Dep </td><td> RFMax60 </td></tr><tr><td> Kütle akış kontrolörü </td><td> Mks </td><td> 2179 ° </td></tr><tr><td> Kuvars Kristal Microbalance </td><td> Infcon </td><td> XTC / 2 </td></tr><tr><td> Arkaplan gaz </td><td> Rivoira-Praxair </td><td> 5.0 oksijen </td></tr><tr><td> Hedef </td><td> Kurt Leşker </td><td> (Istek üzerine yapılır) </td></tr><tr><td> İzopropanol </td><td> Sigma Aldrich </td><td> 190764-2L </td></tr><tr><td> Kaynak ölçer </td><td> Keithley </td><td> K2400 </td></tr><tr><td> Mıknatıs Seti </td><td> Ecopia </td><td> 0.55T-Kit </td></tr><tr><td> Spektrofotometre </td><td> Perkin Elmer </td><td> Lambda 1050 </td></tr></tbody></table>

fabrication of nano-engineered transparent conducting oxides by pulsed laser deposition

Bir arka plan gaz varlığında Nanosaniye Pulsed Lazer Biriktirme (PLD) sağlar plazma bulutunun genişleme dinamiklerinin uygun kontrolü ile ayarlanabilir morfolojisi, yapısı, yoğunluğu ve stokiyometri ile metal oksitlerin birikimi. Böyle yönlülük nano boyutlu kümeler hiyerarşik bir derleme ile karakterize kompakt ve yoğun Nanogeçirgen gelen nanoyapılı filmler üretmek için kullanılabilir. Özellikle biz fotovoltaik aygıtlar saydam elektrot olarak Al katkılı ZnO (AZO) filmleri iki tür üretmek için detaylı bir metodoloji tarif: Düşük O 2 basınçta) 1, sanat durumuna elektriksel iletkenlik ve optik şeffaflık yakın kompakt filmler eşya vardır nano ağaçların ormanına benzeyen 2) yüksek ışık saçılma hiyerarşik yapılar; saydam iletken oksit (TCO) gibi organik fotovoltaik (OPVs) kullanılan polimerler olarak termal duyarlı malzemeler ile uyumlu olacak şekilde, oda sıcaklığında tevdi edilebiliryüksek basınçlarda uced. Bu tür yapılar, yüksek Haze faktörü göster (&gt;% 80) ve ışık yakalayıcı yeteneği geliştirmek için yararlanılabilir. AZO filmler için burada açıklanan yöntem, bu tür TiO 2, Al 2 O 3, WO 3 ve 4 Ag O 4 gibi teknoloji uygulamaları için uygun diğer metal oksitler ile uygulanabilir.

Oksijen atmosferde PLD tarafından AZO birikimi düşük arka plan gaz basıncı (yani 2 Pa) ve yüksek basınç (yani 160 Pa) de hiyerarşik olarak monte kümeler oluşturduğu mezogözenekli orman benzeri yapılar kompakt şeffaf yürütülmesi filmler üretir. Malzeme olan boyutu 2 Pa 22, maksimum (30 nm) nanokristal etki oluşturmaktadır. Kesilen tür ve arka plan gaz arasındaki çarpışmalar nedeniyle, plazma tüy şekli ve uzunluğuna boşluk içinde oks...

Watch this Scientific Journal Video about Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition at JoVE.com

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

Biz bir arka plan gaz varlığında nanosaniye Pulsed Lazer Biriktirme (PLD) tarafından nanoyapılı oksit ince filmlerin yatırmak için deneysel yöntem açıklanmaktadır. Al katkılı ZnO (AZO) filmleri bu yöntemi kullanarak, kompakt hiyerarşik nano ağacı ormanları olarak yapılandırılmıştır için tevdi edilebilir.

Fabrikasyon Pulsed Lazer Biriktirme tarafından Transparent letken Oksitler Nano-mühendislik

Nanosecond Pulsed  Laser Deposition (PLD) in the presence of a background gas allows the deposition  of metal oxides with tunable morphology, structure, ...

fabrication-nano-engineered-transparent-conducting-oxides-pulsed

Research

JoVE Journal

Engineering

15.4K Görüntüleme.  Politecnico di Milano. Biz bir arka plan gaz varlığında nanosaniye Pulsed Lazer Biriktirme (PLD) tarafından nanoyapılı oksit ince filmlerin yatırmak için deneysel yöntem açıklanmaktadır. Al katkılı ZnO (AZO) filmleri bu yöntemi kullanarak, kompakt hiyerarşik nano ağacı ormanları olarak yapılandırılmıştır için tevdi edilebilir.

Video: Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

Investigation of Early Plasma Evolution Induced by Ultrashort Laser Pulses

Early plasma is generated owing to high intensity laser irradiation of target and the subsequent target material ionization. Its dynamics plays a significant role in laser-material interaction, especially in the air environment1-11.
Early plasma evolution has been captured through pump-probe shadowgraphy1-3 and interferometry1,4-7. However, the studied time frames and applied laser parameter ranges are limited. For example, direct examinations of plasma front locations and electron number densities within a delay time of 100 picosecond (ps) with respect to the laser pulse peak are still very few, especially for the ultrashort pulse of a duration around 100 femtosecond (fs) and a low power density around 1014 W/cm2. Early plasma generated under these conditions has only been captured recently with high temporal and spatial resolutions12. The detailed setup strategy and procedures of this high precision measurement will be illustrated in this paper. The rationale of the measurement is optical pump-probe shadowgraphy: one ultrashort laser pulse is split to a pump pulse and a probe pulse, while the delay time between them can be adjusted by changing their beam path lengths. The pump pulse ablates the target and generates the early plasma, and the probe pulse propagates through the plasma region and detects the non-uniformity of electron number density. In addition, animations are generated using the calculated results from the simulation model of Ref. 12 to illustrate the plasma formation and evolution with a very high resolution (0.04 ~ 1 ps).
Both the experimental method and the simulation method can be applied to a broad range of time frames and laser parameters. These methods can be used to examine the early plasma generated not only from metals, but also from semiconductors and insulators.

An experimental method to examine the early plasma evolution induced by ultrashort laser pulses is described. Using this method, high quality images of early plasma are obtained with high temporal and spatial resolutions. A novel integrated atomistic model is used to simulate and explain the mechanisms of early plasma.

Erken Plazma Evrim Araştırılması ultrashort Lazer Bakliyat Bağlı

Early plasma is generated owing to high intensity laser irradiation of target and the subsequent target material ionization. Its dynamics plays a ...

Mühendislik

Fabrication of Spatially Confined Complex Oxides

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from the inherent strong electron correlations that reside within them. These materials can also possess electronic phase separation in which regions of vastly different resistive and magnetic behavior can coexist within a single crystal alloy material. By reducing the scale of these materials to length scales at and below the inherent size of the electronic domains, novel behaviors can be exposed. Because of this and the fact that spin-charge-lattice-orbital order parameters each involve correlation lengths, spatially reducing these materials for transport measurements is a critical step in understanding the fundamental physics that drives complex behaviors. These materials also offer great potential to become the next generation of electronic devices 1-3. Thus, the fabrication of low dimensional nano- or micro-structures is extremely important to achieve new functionality. This involves multiple controllable processes from high quality thin film growth to accurate electronic property characterization. Here, we present fabrication protocols of high quality microstructures for complex oxide manganite devices. Detailed descriptions and required equipment of thin film growth, photo-lithography, and wire-bonding are presented.

We describe the use of pulsed laser deposition (PLD), photolithography and wire-bonding techniques to create micrometer scale complex oxides devices. The PLD is utilized to grow epitaxial thin films. Photolithography and wire-bonding techniques are introduced to create practical devices for measurement purposes.

Mekansal Kapalı Karmaşık Oksitler Fabrikasyon

Complex materials such as high Tc superconductors, multiferroics, and colossal magnetoresistors have electronic and magnetic properties that arise from ...

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent thermal evaporation, and it absorbs visible light strongly. However, for a long time the record power conversion efficiency of SnS solar cells remained below 2%. Recently we demonstrated new certified record efficiencies of 4.36% using SnS deposited by atomic layer deposition, and 3.88% using thermal evaporation. Here the fabrication procedure for these record solar cells is described, and the statistical distribution of the fabrication process is reported. The standard deviation of efficiency measured on a single substrate is typically over 0.5%. All steps including substrate selection and cleaning, Mo sputtering for the rear contact (cathode), SnS deposition, annealing, surface passivation, Zn(O,S) buffer layer selection and deposition, transparent conductor (anode) deposition, and metallization are described. On each substrate we fabricate 11 individual devices, each with active area 0.25 cm2. Further, a system for high throughput measurements of current-voltage curves under simulated solar light, and external quantum efficiency measurement with variable light bias is described. With this system we are able to measure full data sets on all 11 devices in an automated manner and in minimal time. These results illustrate the value of studying large sample sets, rather than focusing narrowly on the highest performing devices. Large data sets help us to distinguish and remedy individual loss mechanisms affecting our devices.

Tin sulfide (SnS) is a candidate material for Earth-abundant, non-toxic solar cells. Here, we demonstrate the fabrication procedure of the SnS solar cells employing atomic layer deposition, which yields 4.36% certified power conversion efficiency, and thermal evaporation which yields 3.88%.

Termal Buharlaşma ve Atomik katman Biriktirme tarafından Record-verimlilik SNS Güneş Pilleri yapma

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent ...

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H2O2/H2O solution did not show measurable change in their initial contact angle (CA) ~75&#176;. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H2O2/H2O solution at 250 and 65 mJ/cm2, respectively, has decreased the CA to near 15&#176;, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer&#8217;s surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of&#160;the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH3OH) using ArF laser operating at pulse fluence of 65 mJ/cm2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103&#176;. The XPS results indicate ArF laser induced formation of Si&#8211;(OCH3)x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH3 radicals.

We report on a process of in situ alteration of HF treated Si (001) surface into a hydrophilic or hydrophobic state by irradiating samples in microfluidic chambers filled with&#160;H2O2/H2O solution (0.01%-0.5%) or methanol solutions using pulsed UV laser of a relative low pulse fluence.

Sıvı Ortamda Darbeli UV Lazer Radyasyonla Silikon Yüzey Islanabilirliği Seçici Alan Değişikliği

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of ...

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

When a laser is mode-locked, it emits a train of ultra-short pulses at a repetition rate determined by the laser cavity length. This article outlines a new and inexpensive procedure to force mode locking in a pre-adjusted nonlinear polarization rotation fiber laser. This procedure is based on the detection of a sudden change in the output polarization state when mode locking occurs. This change is used to command the alignment of the intra-cavity polarization controller in order to find mode-locking conditions. More specifically, the value of the first Stokes parameter varies when the angle of the polarization controller is swept and, moreover, it undergoes an abrupt variation when the laser enters the mode-locked state. Monitoring this abrupt variation provides a practical easy-to-detect signal that can be used to command the alignment of the polarization controller and drive the laser towards mode locking. This monitoring is achieved by feeding a small portion of the signal to a polarization analyzer measuring the first Stokes parameter. A sudden change in the read out of this parameter from the analyzer will occur when the laser enters the mode-locked state. At this moment, the required angle of the polarization controller is kept fixed. The alignment is completed. This procedure provides an alternate way to existing automating procedures that use equipment such as an optical spectrum analyzer, an RF spectrum analyzer, a photodiode connected to an electronic pulse-counter or a nonlinear detecting scheme based on two-photon absorption or second harmonic generation. It is suitable for lasers mode locked by nonlinear polarization rotation. It is relatively easy to implement, it requires inexpensive means, especially at a wavelength of 1550 nm, and it lowers the production and operation costs incurred in comparison to the above-mentioned techniques.

A protocol to detect and automate mode locking in a pre-adjusted nonlinear polarization rotation fiber laser is presented. The detection of a sudden change in the output polarization state when mode locking occurs is used to command the alignment of an intra-cavity polarization controller in order to find mode-locking conditions.

Çıktı Polarizasyon Ölçümler aracılığıyla Doğrusal Olmayan Polarizasyon Rotasyon Fiber Lazer Mod Kilitleme Otomasyonu

When a laser is mode-locked, it emits a train of ultra-short pulses at a repetition rate determined by the laser cavity length. This article outlines a ...

Fabrication of 1-D Photonic Crystal Cavity on a Nanofiber Using Femtosecond Laser-induced Ablation

We present a protocol for fabricating 1-D Photonic Crystal (PhC) cavities on subwavelength-diameter tapered optical fibers, optical nanofibers, using femtosecond laser-induced ablation. We show that thousands of periodic nano-craters are fabricated on an optical nanofiber by irradiating with just a single femtosecond laser pulse. For a typical sample, periodic nano-craters with a period of 350 nm and with diameter gradually varying from 50 - 250 nm over a length of 1 mm are fabricated on a nanofiber with diameter around 450 - 550 nm. A key aspect of such a nanofabrication is that the nanofiber itself acts as a cylindrical lens and focuses the femtosecond laser beam on its shadow surface. Moreover, the single-shot fabrication makes it immune to mechanical instabilities and other fabrication imperfections. Such periodic nano-craters on nanofiber, act as a 1-D PhC and enable strong and broadband reflection while maintaining the high transmission out of the stopband. We also present a method to control the profile of the nano-crater array to fabricate apodized and defect-induced PhC cavities on the nanofiber. The strong confinement of the field, both transverse and longitudinal, in the nanofiber-based PhC cavities and the efficient integration to the fiber networks, may open new possibilities for nanophotonic applications and quantum information science.

We present a protocol for fabricating 1-D photonic crystal cavities on subwavelength diameter silica fibers (optical nanofibers) using femtosecond laser-induced ablation.

Femtosaniye Lazer kaynaklı Ablasyonu kullanarak nanolif 1-D Fotonik Kristal Kavitenin Fabrikasyon

We present a protocol for fabricating 1-D Photonic Crystal (PhC) cavities on subwavelength-diameter tapered optical fibers, optical nanofibers, using ...

Fabrication of Polymer Microspheres for Optical Resonator and Laser Applications

This paper describes three methods of preparing fluorescent microspheres comprising &#960;-conjugated or non-conjugated polymers: vapor diffusion, interface precipitation, and mini-emulsion. In all methods, well-defined, micrometer-sized spheres are obtained from a self-assembling process in solution. The vapor diffusion method can result in spheres with the highest sphericity and surface smoothness, yet the types of the polymers able to form these spheres are limited. On the other hand, in the mini-emulsion method, microspheres can be made from various types of polymers, even from highly crystalline polymers with coplanar, &#960;-conjugated backbones. The photoluminescent (PL) properties from single isolated microspheres are unusual: the PL is confined inside the spheres, propagates at the circumference of the spheres via the total internal reflection at the polymer/air interface, and self-interferes to show sharp and periodic resonant PL lines. These resonating modes are so-called "whispering gallery modes" (WGMs). This work demonstrates how to measure WGM PL from single isolated spheres using the micro-photoluminescence (&#181;-PL) technique. In this technique, a focused laser beam irradiates a single microsphere, and the luminescence is detected by a spectrometer. A micromanipulation technique is then used to connect the microspheres one by one and to demonstrate the intersphere PL propagation and color conversion from coupled microspheres upon excitation at the perimeter of one sphere and detection of PL from the other microsphere. These techniques, &#181;-PL and micromanipulation, are useful for experiments on micro-optic application using polymer materials.

Protocols for the synthesis of microspheres from polymers, the manipulation of microspheres, and micro-photoluminescence measurements are presented.

Optik Rezonatör ve Lazer Uygulamalarında Polimer Mikrokürelerin Üretimi

This paper describes three methods of preparing fluorescent microspheres comprising &#960;-conjugated or non-conjugated polymers: vapor diffusion, ...

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Here, the authors report the embedded metal-mesh transparent electrode (EMTE), a new transparent electrode (TE) with a metal mesh completely embedded in a polymer film. This paper also presents a low-cost, vacuum-free fabrication method for this novel TE; the approach combines lithography, electroplating, and imprint transfer (LEIT) processing. The embedded nature of the EMTEs offers many advantages, such as high surface smoothness, which is essential for organic electronic device production; superior mechanical stability during bending; favorable resistance to chemicals and moisture; and strong adhesion with plastic film. LEIT fabrication features an electroplating process for vacuum-free metal deposition and is favorable for industrial mass production. Furthermore, LEIT allows for the fabrication of metal mesh with a high aspect ratio (i.e., thickness to linewidth), significantly enhancing its electrical conductance without adversely losing optical transmittance. We demonstrate several prototypes of flexible EMTEs, with sheet resistances lower than 1 &#937;/sq and transmittances greater than 90%, resulting in very high figures of merit (FoM) &#8211; up to 1.5 x 104 &#8211; which are amongst the best values in the published literature.

This protocol describes a solution-based fabrication strategy for high-performance, flexible, transparent electrodes with fully-embedded, thick metal mesh. Flexible transparent electrodes fabricated by this process demonstrate among the highest reported performances, including ultra-low sheet resistance, high optical transmittance, mechanical stability under bending, strong substrate adhesion, surface smoothness, and environmental stability.

Gömülü Metal Örgülü Yüksek Performanslı, Esnek, Şeffaf Elektrotlar için Ölçeklenebilir Çözeltiyle İşlenmiş Üretim Stratejisi

Here, the authors report the embedded metal-mesh transparent electrode (EMTE), a new transparent electrode (TE) with a metal mesh completely embedded in a ...

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.&#160; We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.&#160; Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

We present a detailed method for fabricating ultra-thin color films with improved characteristics for optical coatings. The oblique angle deposition technique using an electron beam evaporator allows improved color tunability and purity. Fabricated films of Ge and Au on Si substrates were analyzed by reflectance measurements and color information conversion.

Eğik açısı ifade kullanarak medya yüksek emici ile Ultra ince renk filmleri imalatı

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.&#160; We present ...

Production of Single Tracks of Ti-6Al-4V by Directed Energy Deposition to Determine the Layer Thickness for Multilayer Deposition

Directed Energy Deposition (DED), which is an additive manufacturing technique, involves the creation of a molten pool with a laser beam where metal powder is injected as particles. In general, this technique is employed to either fabricate or repair different components. In this technique, the final characteristics are affected by many factors. Indeed, one of the main tasks in building components by DED is the optimization of process parameters (such as laser power, laser speed, focus, etc.) which is usually carried out through an extensive experimental investigation. However, this sort of experiment is extremely lengthy and costly. Thus, in order to accelerate the optimization process, an investigation was conducted to develop a method based on the melt pool characterizations. In fact, in these experiments, single tracks of Ti-6Al-4V were deposited by a DED process with multiple combinations of laser power and laser speed. Surface morphology and dimensions of single tracks were analyzed, and geometrical characteristics of melt pools were evaluated after polishing and etching the cross-sections. Helpful information regarding the selection of optimal process parameters can be achieved by examining the melt pool features. These experiments are being extended to characterize the larger blocks with multiple layers. Indeed, this manuscript describes how it would be possible to quickly determine the layer thickness for the massive deposition, and avoid over or under-deposition according to the calculated energy density of the optimum parameters. Apart from the over or under-deposition, time and materials saving are the other great advantages of this approach in which the deposition of multilayer components can be started without any parameter optimization in terms of layer thickness.

In this research, a rapid method based on melt pool characterization is developed to estimate the layer thickness of Ti-6Al-4V components produced by directed energy deposition.

Ti-6Al-4V tabakası kalınlığı çok katmanlı ifade vermek için gitmek belirlemek için yönlendirilmiş enerji birikimi tarafından tek parça imalatı

Directed Energy Deposition (DED), which is an additive manufacturing technique, involves the creation of a molten pool with a laser beam where metal ...