The long-standing collaboration with Chang-Beom Eom at the University of Wisconsin-Madison, who provided the LAO/STO samples, is gratefully acknowledged. Video editing assistance from Christopher Solis is greatly appreciated. This work is supported by NSF (DMR-1104191, DMR-1124131), ARO (W911NF-08-1-0317), and AFOSR (FA9550-10-1-0524, FA9550-12-1-0268, FA9550-12-1-0057).

1.. LAO / STO heteroyapılarda Alınır <ol><li> TiO2 sonlandırılmış STO yüzeylerde darbeli lazer birikimi tarafından yetiştirilen LAO 3.4 birim hücrelerden oluşan bir oksit heteroyapı edinin. Örnek büyüme detaylı No. 22 tarif edilmiştir. </li></ol> Numune 2. Fotolitografik İşleme Bir çip taşıyıcı kablo tuvaller için yapıştırma pedleri Lao / STO arayüzüne elektrik temas oluşturun. Tek tek işlem adımları aşağıda ayrıntılı olarak tarif edilmiştir. <ol><li> Spin Fotorezist <ol><li> Daha sonra 30 saniye boyunca 4000 rpm, 5 saniye boyunca 600 rpm&#39;de numuneler üzerinde fotorezist Spin. Fotorezist tabakası, yaklaşık 2 mikron kalınlığında olacaktır. 1 dakika boyunca 95 ° C&#39;de pişirin örnekleri. </li></ol></li><li> 5 mW / cm 2 lik bir dozda 100 saniye için 320 nm ışık ile bir maske kullanılarak hizalama fotorezist Açığa. </li><li> Fo Photoresist geliştirici olarak photoresist&#39;i geliştirinr 1 dak. </li><li> İyonlama <ol><li> Fotorezist tarafından kapsanmayan alanlarda 15 malzeme nm (Lao ve STO) kaldırmak için bir Ar + iyonu değirmeni kullanın. Gelen Ar + iyon kirişe dik yönde bir 22.5 ° açıyla numuneler. Ar + aşındırma oranı kalibre değilse, malzemenin doğru miktarda kaldırılır emin olmak için bir kalibrasyon çalışması yapmak. AFM veya eşdeğer profilmetry kullanarak dağlama derinliğini belirleyin. </li></ol></li><li> Ti ve Au DC püskürtme <ol><li> Deposit 4 nm Ti, daha sonra Au maruz STO tabakasıyla elektrik teması numunelerin üzerine 25 nm Au yapar, böylece. Püskürtme basıncı aralığında 2-6 x 10 -7 Torr olan ve püskürtme oda sıcaklığında numune ile gerçekleşir. Ti çekim ile 10 dakika boyunca açık çekim, daha sonra 100 W da kapalı ön-püskürtülmesi ve tamamlanması üzerine 100 W da 20 saniye boyunca püskürtmeyle çökeltilmesi, hemen 50 W de 1 dakika boyunca Au ön püskürtmeyle çökeltilmesi sonra da numune için 30 saniye Au sputter 50 W. Caliİstenen Ti ve Au kalınlıkları üretmek için zaman brate. </li></ol></li><li> Havalanma <ol><li> Numunelerin yüzeyinden fotorezist kaldırmak için aseton / IPA ultrasonik yıkama kullanın. </li></ol></li><li> İkinci katman <ol><li> 4. adımda (yani. Hariç iyon öğütme) hariç ikinci taşbaskı süreç, bireysel bağ yastıkları altın tel bağlantıları oluşturmak için kullanılır. İki desen onlar elektrik şort üretmek değil emin olmak için iyi hizalanmış olmalıdır. </li></ol></li><li> Plazma temizleme. <ol><li> Bir IPC Namlu Etcher desen açmada Fotorezist artıklarını kaldırmak için kullanılır. 1 dakika için 100 W ve 1 Torr argon at kullanılan alet, </li></ol></li></ol> 3.. Tel Bond örnek Yazma hazırlanın <ol><li> 28 mevcut iğneli bir yonga taşıyıcı (Şekil 2A) olarak LAO / STO örnek monte edin. </li><li> Tel bağ yapısı </li></ol> NOT: Elektrik c yapmak için bir tel birleştirme düzeni kullanınnumune üzerine yapıştırma pedleri ve yonga taşıyıcı arasında onnections. Elektrik kontakları ve çip taşıyıcı arasında 1 mil (25 mikrometre) altın teller takın. Nanoyapıları yaz 4. Nanoyapılar yazın <ol><li> Iletken nano (Şekil 3A) gayri resmi bir taslak oluşturun. </li><li> Ölçeklenebilir vektör grafikleri (SVG) editör (Şekil 3B) açın. <ol><li> Bir şablon kullanın veya AFM görüntünün o maç için pencere boyutunu tanımlamak. </li><li> SVG editörü içine numunenin AFM görüntüsünü yükleyin. </li><li> AFM resmi üzerine bindirilmiş nanoyapılarını unsurları oluşturmak. </li></ol></li><li> Nanolitografi programa SVG dosya yükleyin. </li><li> Bir iletken nano yapısını oluşturmak için litografi yazılımını çalıştırın. <ol><li> Kullanım V tip = +10 nanoyapıları oluşturmak için V ve V tip = nanoyapıları silmek için -10 V. </li><li> Arasında değişen bir hızda c-AFM ucu taşı 202 mm / sn 0 nm / sn. </li></ol></li></ol> 5.. Cihaz soğutun ve Ölçümleri atın <ol><li> Tüm beyaz ışıkları kapatın ve kırmızı filtreler / ışık kaynağı kullanın. </li><li> AFM sistemden örnek ayıklayın. </li><li> Seyreltme buzdolabı (A) içine örnek yerleştirin. </li><li> Numune soğutulur olarak sıcaklığında (B) vs direncini ölçün. </li><li> Düşük sıcaklıklarda (C) &#39;de taşıma özellikleri ölçün. </li></ol>

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The authors have nothing to disclose.

Successful creation of nanostructures depends on several critical steps. It is important that the LAO/STO samples are grown with a thickness that is known to be at the boundary between the insulating and conductive phase. (Details of sample growth fall outside the scope of this paper, but are crucial for overall success.) Second, it is important to have relative humidity within the range 25-45% for successful c-AFM writing. Values below 25% are unlikely to produce conductive nanostructures, while too high humidity will generally produce uncontrollably large features. Also, temperature control of the AFM is important if the c-AFM tip needs to achieve precise registry over long periods of time. Once the nanostructures are created, they must be placed in a vacuum environment if experiments lasting longer than a few hours are to be performed. For the experiments described here, the structure is created and within minutes transferred to a vacuum environment.
It is recommend before writing that a &#8220;writing test&#8221; be performed on all relevant electrodes. In such a test, two virtual electrodes are first created, and a single nanowire is written while simultaneously monitoring the conductance. A similar test of erasure can be performed by &#8220;cutting&#8221; the nanowire shortly afterwards. If the nanostructure is decaying rapidly, the issue is most likely due either to the interfacial contacts or the canvas itself. To distinguish between these two effects, a four-terminal measurement of the conductance should be performed, and the two-terminal conductance should be compared with the four-terminal conductance as a function of time. If the two-terminal conductance is decaying more rapidly than the four-terminal conductance, then the issue is related to the electrical contacts to the interface. If the four-terminal conductance is decaying at a comparable rate, then most likely the canvas is not suitable and should be replaced.
There are natural limitations of the current method for creating nanostructures. Specifically, the writing speed for the smallest devices is limited to a few hundred nanometers per second. Speeds far above that value lead to unpredictable results. Use of parallel writing techniques are possible27,28, but are not highly developed and have their own drawbacks. The size of nanostructures that can be created is naturally limited by the scan range of the AFM being used. A high-quality AFM with closed-loop feedback in the two scan directions is highly recommended. Tracking of point-like objects on the sample surface should be performed to monitor temporal drift of the sample.
Once creation of conductive nanostructures at oxide interfaces has been mastered, there are a wide range of experimental directions that can be explored. Using this technique, a wide variety of nanostructures and devices have already been demonstrated, including nanowires18, tunnel barriers29, rectifying junctions30, field-effect transistors18, single-electron transistors31, superconducting nanowires32, nanoscale optical detectors33, and nanoscale THz emitters and detectors34.

Oksit heteroyapılar 1-5 sergi hem bilimsel ilginç ve uygulamaları 4 için potansiyel olarak yararlı olan acil fiziksel fenomenlerin oldukça geniş bir çeşitlilik. Özellikle, LaAlO 3 (LAO) ve SrTiO 3 (STO) 6 arasındaki arayüz, 8 ferroelektrik gibi ve ferromanyetik 9 davranış 7 süperiletken, iletken, yalıtkan sergileyebilir. 2006 yılında, Thiel ve diğerleri LAO tabakasının kalınlığı gibi keskin bir yalıtkan-metal geçiş olduğunu göstermiştir 4 10 birim hücreler (4uc) önemli bir kalınlık ile artar. Bu, daha sonra 3uc-LAO/STO yapılar iletken bir atomik kuvvet mikroskopu (c-AFM) probu 11 ile yerel olarak kontrol edilebilir bir histeretik geçiş sergiledikleri gösterilmiştir. Bu tür LaAlO 3/3 SrTiO gibi oksit arabirimleri özellikleri yapma varlığı veya yokluğu bağlıdırarayüzde elektronlar. Bu elektronlar geri üst geçit elektrotları 12,13, kapıları 10 kullanılarak kontrol edilebilir, yüzey 14 adzorbatlar, ferroelektrik katmanlar 15,16 ve c-AFM litografi 11. C-AFM litografi benzersiz bir özelliği, çok küçük nano özellikleri oluşturulabilir olmasıdır. Iki boyutlu hapsi ile birlikte elektrik üst geçit, çoğu zaman III-V yarı iletkenler 17 kuantum noktaları oluşturmak için kullanılır. Alternatif olarak, yarı-tek boyutlu yarı iletken nanotellerdir elektriksel yakınlığı ile Geçitli edilebilir. Bu yapıların üretilmesi için yöntemler zaman alıcıdır ve genel olarak geri dönüşümsüzdür. Buna karşılık, c-AFM litografi tekniği nanoyapılarını bir deney için yaratıldı ve sonra (bir beyaz tahtaya benzer) &quot;silinebilir&quot; olabilir anlamda geri dönüşümlüdür. Silme sırasında Genel c-AFM yazma, AFM ucuna uygulanan pozitif gerilimleri ile yapılırnegatif voltajları kullanılarak gerçekleştirilir. , Belirli bir yapı oluşturmak için gerekli süre, cihazın karmaşıklığına bağlıdır, ancak genellikle en az 30 dk; O zaman çoğu tuval silme harcanmaktadır. Tipik uzaysal çözünürlüğü yaklaşık 10 nanometre olduğunu, ancak 2 nanometre 18 olarak oluşturulabilir ile uygun ayarlama gibi küçük özellikler. Nano ölçekli üretim prosedürün ayrıntılı bir açıklaması yer almaktadır. Burada sağlanan ayrıntılı benzer deneyler ilgi araştırmacılar tarafından gerçekleştirilen izin vermek için yeterli olmalıdır. Burada anlatılan yöntemi, yarıiletkenlerin elektronik nanoyapıları oluşturmak için kullanılan geleneksel taşbaskı yaklaşımlar üzerinde birçok avantajı vardır. Burada anlatılan c-AFM litografi yöntemi tarama anodik oksidasyon 19, dip-kalem nanolitografi 20, piezoelektrik desenleme dahil tarama-prob-tabanlı litografi çabaları, çok daha geniş bir sınıfın bir parçası21, vb. Yeni arabirimleri oksit kullanımı ile birlikte, burada açıklanan c-AFM teknik, fiziksel özelliklerin benzersiz bir çeşitliliği ile en yüksek hassasiyete sahip, elektronik yapıların bazı üretebilir.

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		<tr height="20">
			<td height="20" style="height:20px;width:165px;">Name</td>
			<td style="width:169px;">Company</td>
			<td style="width:108px;">Catalog Number</td>
			<td style="width:447px;">Comments</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Equipment</td>
			<td></td>
			<td></td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Contact Aligner</td>
			<td>Karl-Suss</td>
			<td>MA6</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Spinner</td>
			<td>Solitec</td>
			<td>5110C</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Ion Mill</td>
			<td>Commonwealth Scientific</td>
			<td>8C</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Sputtering System</td>
			<td>Leybold-Heraeus</td>
			<td>Z-650</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Barrel Etcher</td>
			<td>Branson/IPC</td>
			<td>3000C</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Wire Bonder</td>
			<td>Westbond</td>
			<td>7700E</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">AFM</td>
			<td>Asylum Research</td>
			<td>MFP-3D</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Dilution Refrigerator</td>
			<td>Quantum Design</td>
			<td>P850</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Ultrasonic Wash Machine</td>
			<td>Fisher Scientific</td>
			<td>15-335-6</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Current Amplifier</td>
			<td>Femto</td>
			<td>DLPCA-200</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;"></td>
			<td></td>
			<td></td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Materials</td>
			<td></td>
			<td></td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">LaAlO3/SrTiO3</td>
			<td>Prof. Chang-Beom Eom</td>
			<td>N/A</td>
			<td>5mm x 1mm with ~3.4 unit cells of LAO (See Reference 18)</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Photoresist</td>
			<td>AZ Electronic Materials</td>
			<td>P4210</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Developer</td>
			<td>AZ Electronic Materials</td>
			<td>400K</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Acetone</td>
			<td>Fisher Scientific</td>
			<td>A929SK-4</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Isopropyl Alcohol</td>
			<td>Fisher Scientific</td>
			<td>A459-1</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Deionized Water</td>
			<td>Fisher Scientific</td>
			<td>23-290-065</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Gold Wire</td>
			<td>DuPont</td>
			<td>5771</td>
			<td>1 mil diameter</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Chip Carrier</td>
			<td>NTK Technologies</td>
			<td>IRK28F1-5451D</td>
			<td></td>
		</tr>
	</tbody>
</table>

writing and low-temperature characterization of oxide nanostructures

Oxide nanoelectronics is a rapidly growing field which seeks to develop novel materials with multifunctional behavior at nanoscale dimensions. Oxide interfaces exhibit a wide range of properties that can be controlled include conduction, piezoelectric behavior, ferromagnetism, superconductivity and nonlinear optical properties. Recently, methods for controlling these properties at extreme nanoscale dimensions have been discovered and developed. Here are described explicit step-by-step procedures for creating LaAlO3/SrTiO3 nanostructures using a reversible conductive atomic force microscopy technique. The processing steps for creating electrical contacts to the LaAlO3/SrTiO3 interface are first described. Conductive nanostructures are created by applying voltages to a conductive atomic force microscope tip and locally switching the LaAlO3/SrTiO3 interface to a conductive state. A versatile nanolithography toolkit has been developed expressly for the purpose of controlling the atomic force microscope (AFM) tip path and voltage. Then, these nanostructures are placed in a cryostat and transport measurements are performed. The procedures described here should be useful to others wishing to conduct research in oxide nanoelectronics.

Sonuçlar Burada gösterilen Nano Bu sınıf tarafından sergilenen edilebilir ulaştırma davranış temsilidir ve başka bir yerde ayrıntılı olarak, 23-26 &#39;de tarif edilmiştir. Bu örnekte, bir nanotel boşluğu 3.3 birim hücre LAO / STO heteroyapıların dan (Şekil 4) inşa edilmiştir. Deneylerini 11 &quot;kesme&quot; tellerin tarafından belirlenen (yeşil renkte) İletken yolları, geniş genellikle 10 nm. Ucu yazma hızı olarak her segment için uç hızı ve voltaj, litografi ön panelinde (Şekil 4B) bağımsız yapılandırılabilir. &quot;Sanal elektrotlar&quot; yüzey kişileri ile bu arayüz nanoyapılarda için son derece iletken bir elektrik bağlantısı olduğundan emin olun. Nano yazıldıktan sonra, bu seyreltme buzdolabı aktarılır. 550 nm altında veya ışığa maruz kalma istenmeyen fotoiletimi üretecek, bu yüzden important karanlıkta veya kırmızı bir &quot;karanlık oda&quot; ışık (Şekil 5A) yardımı ile cihazı aktarmak. Elektrik bağlantıları, oda sıcaklığında yapılmalı ve kriyojenik sıcaklıklarda elektrik bağlantılarını değiştirirken en çok yarı iletken nanoyapılarda olduğu gibi, büyük dikkat edilmelidir. Cihazlar elektrostatik boşalmaya maruz kalırsa, büyük olasılıkla yalıtım olacak. Dikkate değer olarak, cihazın işlevselliği &quot;döngü&quot; 300 K sıcaklıkta ve tekrar soğutma ile elde edilebilir. Soğutma sırasında, bu iki uç direncinin izlenmesi için rutin olan, ve hatta dört-terminal direnç, sıcaklığın bir fonksiyonu olarak. AC akım transimpedans amplifikatör kullanılarak ölçülür ise, bu ölçümler için, bir AC voltajı (tipik olarak ~ 1 mV), elektrotlardan biri için düşük bir frekansta (&lt;10 Hz) uygulanır. Demodülasyon in-Lock ve filtreleme içeride geliştirilen bir kilit-amplifikatör kullanılarak gerçekleştirilir. Ac current sıcaklığın bir fonksiyonu (Şekil 5B) olarak izlenir. Cihaz seyreltme buzdolabında (50 mK) taban sıcaklığına kadar soğutuldu sonra, dört terminal transport ölçümleri (Şekil 5C) gerçekleştirilir. Cihaz üzerinde voltaj aynı anda ölçülür ise, bu ölçümler için, akım, cihazın ana kanal üzerinden kaynaklı. Yerine kilit-amplifikatör, tam akım-gerilim ile ölçüm (IV) iz ölçülür. Bu yöntem, daha fazla bilgi içerir ve diferansiyel iletim sayısal farklılaşma yoluyla hesaplanabilir. Belirli bir aygıt için, diferansiyel iletim yan kapı voltajı V SG bir fonksiyonu olarak ölçülür. Bu kapı, cihazın kimyasal potansiyel değiştirilmesini sağlar. Cihaz üzerinden taşıma Coulomb blokaj daha küçük değerler için yer alır ve stro ettiği bölgeleri gösteren, güçlü bir tekdüze olmayan bağımlılığını göstermektedirV sg daha büyük değerler için süperiletkenlik ng. Cihazın bu sınıf için fiziksel yorumlanmasına detayları başka bir yerde tarif edilecektir. <img alt="Şekil 1" src="/files/ftp_upload/51886/51886fig1highres.jpg" /> .. Şekil 1. fotolitografik işlem adımları Adım 1: sıkma Fotorezist. Adım 2: maske hizalama kullanarak photoresist&#39;i maruz. Adım 3: photoresist&#39;i gelişir. Adım 4: iyon freze. Adım 5: DC Ti ve Au yatırmak için sıçratma. Adım 6: asansör-off. Adım 7: ikinci kat yatırmak. Adım 8: plazma temizleme. <img alt="Şekil 2," src="/files/ftp_upload/51886/51886fig2highres.jpg" /> Şekil 2.. Lithographically desenli Lao / STO heteroyapıların Görüntüler. Bir çip taşıyıcıya bağlanmış 5mm x 5mm örnek telini gösteren (A) Görüntü. (B)<html> Yapıştırma pedleri ve tuvaller birini gösteren optik görüntü. (C), tek bir tuval Close-up. <a href="https://www.jove.com/files/ftp_upload/51886/51886fig2highres.jpg" target="_blank">, bu rakamın daha büyük bir versiyonunu görmek için buraya tıklayınız.</a> <img alt="Şekil 3," src="/files/ftp_upload/51886/51886fig3highres.jpg" /> Şekil 3. Lao / STO nano (A) Gayri tasarım. (B) bir açık kaynak ölçeklenebilir vektör grafikleri (SVG) editörü kullanarak nano hassas düzeni. <img alt="Şekil 4," src="/files/ftp_upload/51886/51886fig4highres.jpg" /> Şekil 4. C-AFM desenlendirme için (A) Litografiler ön panel. (B) 3D simülatörü Ekran konumunu ve c-AFM ucu voltajını gösteren.w.jove.com/files/ftp_upload/52058/52058fig4large.jpg &quot;target =&quot; _blank &quot;&gt; bu rakamın daha büyük bir versiyonunu görmek için buraya tıklayınız. <img alt="Şekil 5," src="/files/ftp_upload/51886/51886fig5highres.jpg" /> Şekil 5. (A) LAO / STO nanoyapılarını seyreltme buzdolabına sokulmadan. (B) numune direnci İzleme 50 mK 300 K soğutulur. Cihazın dört-terminal diferansiyel iletkenlik (C) İzleme bir fonksiyonu olarak cihaza (V4T) karşısında yan kapı gerilimi VSG ve gerilim. Siemens (S) birimleri, ve gerilim görüntülenen yoğunluğu grafiği volt (V) birimleriyle görüntülenir.

Watch this Scientific Journal Video about Writing and Low-Temperature Characterization of Oxide Nanostructures at JoVE.com

Writing and Low-Temperature Characterization of Oxide Nanostructures

Oxide nanostructures provide new opportunities for science and technology. The interfacial conductivity between LaAlO3 and SrTiO3 can be controlled with near-atomic precision using a conductive atomic force microscopy technique. The protocol for creating and measuring conductive nanostructures at LaAlO3/SrTiO3 interfaces is demonstrated.

Yazma ve Oksit Nanoyapıların Düşük Sıcaklık Karakterizasyonu

Oxide nanoelectronics is a rapidly growing field which seeks to develop novel materials with multifunctional behavior at nanoscale dimensions.  Oxide ...

writing-and-low-temperature-characterization-of-oxide-nanostructures

Research

JoVE Journal

Engineering

9.9K Görüntüleme.  University of Pittsburgh. Oxide nanostructures provide new opportunities for science and technology. The interfacial conductivity between LaAlO3 and SrTiO3 can be controlled with near-atomic precision using a conductive atomic force microscopy technique. The protocol for creating and measuring conductive nanostructures at LaAlO3/SrTiO3 interfaces is demonstrated.

Video: Writing and Low-Temperature Characterization of Oxide Nanostructures

A Method to Fabricate Disconnected Silver Nanostructures in 3D

The standard nanofabrication toolkit includes techniques primarily aimed at creating 2D patterns in dielectric media. Creating metal patterns on a submicron scale requires a combination of nanofabrication tools and several material processing steps. For example, steps to create planar metal structures using ultraviolet photolithography and electron-beam lithography can include sample exposure, sample development, metal deposition, and metal liftoff. To create 3D metal structures, the sequence is repeated multiple times. The complexity and difficulty of stacking and aligning multiple layers limits practical implementations of 3D metal structuring using standard nanofabrication tools. Femtosecond-laser direct-writing has emerged as a pre-eminent technique for 3D nanofabrication.1,2 Femtosecond lasers are frequently used to create 3D patterns in polymers and glasses.3-7 However, 3D metal direct-writing remains a challenge. Here, we describe a method to fabricate silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm. The method enables the fabrication of patterns not feasible using other techniques, such as 3D arrays of disconnected silver voxels.8 Disconnected 3D metal patterns are useful for metamaterials where unit cells are not in contact with each other,9 such as coupled metal dot10,11or coupled metal rod12,13 resonators. Potential applications include negative index metamaterials, invisibility cloaks, and perfect lenses.
In femtosecond-laser direct-writing, the laser wavelength is chosen such that photons are not linearly absorbed in the target medium. When the laser pulse duration is compressed to the femtosecond time scale and the radiation is tightly focused inside the target, the extremely high intensity induces nonlinear absorption. Multiple photons are absorbed simultaneously to cause electronic transitions that lead to material modification within the focused region. Using this approach, one can form structures in the bulk of a material rather than on its surface.
Most work on 3D direct metal writing has focused on creating self-supported metal structures.14-16 The method described here yields sub-micrometer silver structures that do not need to be self-supported because they are embedded inside a matrix. A doped polymer matrix is prepared using a mixture of silver nitrate (AgNO3), polyvinylpyrrolidone (PVP) and water (H2O). Samples are then patterned by irradiation with an 11-MHz femtosecond laser producing 50-fs pulses. During irradiation, photoreduction of silver ions is induced through nonlinear absorption, creating an aggregate of silver nanoparticles in the focal region. Using this approach we create silver patterns embedded in a doped PVP matrix. Adding 3D translation of the sample extends the patterning to three dimensions.

Femtosecond-laser direct-writing is frequently used to create three-dimensional (3D) patterns in polymers and glasses. However, patterning metals in 3D remains a challenge. We describe a method for fabricating silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm.

3D Disconnected Gümüş Nanoyapılar Fabrikasyona için Bir Yöntem

The standard nanofabrication toolkit includes  techniques primarily aimed at creating 2D patterns in dielectric media. Creating  metal patterns on a ...

Mühendislik

Probing and Mapping Electrode Surfaces in Solid Oxide Fuel Cells

Solid oxide fuel cells (SOFCs) are potentially the most efficient and cost-effective solution to utilization of a wide variety of fuels beyond hydrogen 1-7. The performance of SOFCs and the rates of many chemical and energy transformation processes in energy storage and conversion devices in general are limited primarily by charge and mass transfer along electrode surfaces and across interfaces. Unfortunately, the mechanistic understanding of these processes is still lacking, due largely to the difficulty of characterizing these processes under in situ conditions. This knowledge gap is a chief obstacle to SOFC commercialization. The development of tools for probing and mapping surface chemistries relevant to electrode reactions is vital to unraveling the mechanisms of surface processes and to achieving rational design of new electrode materials for more efficient energy storage and conversion2. Among the relatively few in situ surface analysis methods, Raman spectroscopy can be performed even with high temperatures and harsh atmospheres, making it ideal for characterizing chemical processes relevant to SOFC anode performance and degradation8-12. It can also be used alongside electrochemical measurements, potentially allowing direct correlation of electrochemistry to surface chemistry in an operating cell. Proper in situ Raman mapping measurements would be useful for pin-pointing important anode reaction mechanisms because of its sensitivity to the relevant species, including anode performance degradation through carbon deposition8, 10, 13, 14 ("coking") and sulfur poisoning11, 15 and the manner in which surface modifications stave off this degradation16. The current work demonstrates significant progress towards this capability. In addition, the family of scanning probe microscopy (SPM) techniques provides a special approach to interrogate the electrode surface with nanoscale resolution. Besides the surface topography that is routinely collected by AFM and STM, other properties such as local electronic states, ion diffusion coefficient and surface potential can also be investigated17-22. In this work, electrochemical measurements, Raman spectroscopy, and SPM were used in conjunction with a novel test electrode platform that consists of a Ni mesh electrode embedded in an yttria-stabilized zirconia (YSZ) electrolyte. Cell performance testing and impedance spectroscopy under fuel containing H2S was characterized, and Raman mapping was used to further elucidate the nature of sulfur poisoning. In situ Raman monitoring was used to investigate coking behavior. Finally, atomic force microscopy (AFM) and electrostatic force microscopy (EFM) were used to further visualize carbon deposition on the nanoscale. From this research, we desire to produce a more complete picture of the SOFC anode.

We present a unique platform for characterizing electrode surfaces in solid oxide fuel cells (SOFCs) that allows simultaneous performance of multiple characterization techniques (e.g. in situ Raman spectroscopy and scanning probe microscopy alongside electrochemical measurements). Complementary information from these analyses may help to advance toward a more profound understanding of electrode reaction and degradation mechanisms, providing insights into rational design of better materials for SOFCs.

Katı Oksit Yakıt Hücreleri Elektrot Yüzeyler Sondalama ve Haritalama

Solid oxide fuel cells (SOFCs) are potentially the most efficient and cost-effective solution to utilization of a wide variety of fuels beyond hydrogen ...

Visible-light Induced Reduction of Graphene Oxide Using Plasmonic Nanoparticle

Present work demonstrates the simple, chemical free, fast, and energy efficient method to produce reduced graphene oxide (r-GO) solution at RT using visible light irradiation with plasmonic nanoparticles. The plasmonic nanoparticle is used to improve the reduction efficiency of GO. It only takes 30 min&#160;at RT by illuminating the solutions with Xe-lamp, the r-GO solutions can be obtained by completely removing gold nanoparticles through simple centrifugation step. The spherical gold nanoparticles (AuNPs) as compared to the other nanostructures is the most suitable plasmonic nanostructure for r-GO preparation. The reduced graphene oxide prepared using visible light and AuNPs was equally qualitative as chemically reduced graphene oxide, which was supported by various analytical techniques such as UV-Vis spectroscopy, Raman spectroscopy, powder XRD and XPS. The reduced graphene oxide prepared with visible light shows excellent quenching properties over the fluorescent molecules modified on ssDNA and excellent fluorescence recovery for target DNA detection. The r-GO prepared by recycled AuNPs is found to be of same quality with that of chemically reduced r-GO. The use of visible light with plasmonic nanoparticle demonstrates the good alternative method for r-GO synthesis.

A simple protocol for the preparation of reduced graphene oxide using visible light and plasmonic nanoparticle is described.

Plasmonik Nanoparçacık Kullanma Grafen Oksit Görünür ışık Bağlı Azaltma

Present work demonstrates the simple, chemical free, fast, and energy efficient method to produce reduced graphene oxide (r-GO) solution at RT using ...

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal&#8211;semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 &#937;&#8722;1 cm&#8722;1, with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed. Similar results can be obtained for other layer semiconductor materials such as MoS2 and WS2.

We describe the approaches for the device fabrication and electrical characterization of molybdenum diselenide (MoSe2) layer semiconductor nanostructures with different thicknesses. In addition, the fabrication of ohmic contacts for MoSe2-layer nanocrystals by the focused-ion beam deposition method using platinum (Pt) as a contact metal is described.

Ohmik İletişim Fabrikasyon bir Odaklı iyon Işın Tekniği ve Elektriksel Karakterizasyonu Katmanı Yarıiletken Nanoyapıların için kullanma

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor ...

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

We demonstrate a method for the low temperature growth (350 &#176;C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive thin-films. Due to the low growth temperature, the process allows integration with modern low-&#954; dielectrics and some flexible substrates. The process is compatible with standard semiconductor fabrication, and a method for the fabrication of electrical 4-point probe test structures for vertical interconnect test structures is presented. Using scanning electron microscopy the morphology of the CNT bundles is investigated, which demonstrates vertical alignment of the CNT and can be used to tune the CNT growth time. With Raman spectroscopy the crystallinity of the CNT is investigated. It was found that the CNT have many defects, due to the low growth temperature. The electrical current-voltage measurements of the test vertical interconnects displays a linear response, indicating good ohmic contact was achieved between the CNT bundle and the top and bottom metal electrodes. The obtained resistivities of the CNT bundle are among the average values in the literature, while a record-low CNT growth temperature was used.

A method for the growth of low temperature vertically-aligned carbon nanotubes, and the subsequent fabrication of vertical interconnect electrical test structures using semiconductor fabrication is presented.

Yarıiletken Teknolojisi ile uyumlu Düşük Sıcaklık Karbon Nanotüp Dikey Bağlantıları Fabrikasyon

We demonstrate a method for the low temperature growth (350 &#176;C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive ...

Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly known as plasmonic effects, play an important role. Research in this field has, however, been impeded owing to the difficulty of fabricating devices containing the desired functional metal nanostructures. In order to provide a viable strategy to this issue, we herein show a transfer printing-based approach that allows the quick and low-cost integration of designed metal nanostructures with a variety of device architectures, including solar cells. Nanopillar poly(dimethylsiloxane) (PDMS) stamps were fabricated from a commercially available nanohole plastic film as a master mold. On this nanopatterned PDMS stamps, Ag films were deposited, which were then transfer-printed onto block copolymer (binding layer)-coated hydrogenated microcrystalline Si (&#181;c-Si:H) surface to afford ordered Ag nanodisk structures. It was confirmed that the resulting Ag nanodisk-incorporated &#181;c-Si:H solar cells show higher performances compared to a cell without the transfer-printed Ag nanodisks, thanks to plasmonic light trapping effect derived from the Ag nanodisks. Because of the simplicity and versatility, further device application would also be feasible thorough this approach.

A viable transfer printing-based methodology to introduce plasmonic metal nanostructures in solar cells is described. Using nanopillar poly(dimethylsiloxane) stamps, an Ag-based ordered nanodisk array was integrated with standard hydrogenated microcrystalline Si solar cells, which led to improved device performances due to plasmonic light trapping.

Transfer Baskı ile Hidrojene Mikrokristal Silikon Güneş Pilleri Işık Yakalama Gümüş Nanoyapıların Entegrasyonu

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly ...

Writing Bragg Gratings in Multicore Fibers

Fiber Bragg gratings in multicore fibers can be used as compact and robust filters in astronomical and other research and commercial applications. Strong suppression at a single wavelength requires that all cores have matching transmission profiles. These gratings cannot be inscribed using the same method as for single-core fibers because the curved surface of the cladding acts as a lens, focusing the incoming UV laser beam and causing variations in exposure between cores. Therefore we use an additional optical element to ensure that the beam shape does not change while passing through the cross-section of the multicore fiber. This consists of a glass capillary tube which has been polished flat on one side, which is then placed over the section of the fiber to be inscribed. The laser beam enters the fiber through the flat surface of the capillary tube and hence maintains its original dimensions. This paper demonstrates the improvements in core-to-core uniformity for a 7-core fiber using this method. The technique can be generalized to larger multicore fibers.

We describe a technique for inscribing identical fiber Bragg gratings into each core of a multicore fiber. This is achieved by introducing an additional surface into the optical path to mitigate lensing by the curved surface of the fiber cladding.

Çok çekirdekli Fibers Bragg Izgaralar Yazma

Fiber Bragg gratings in multicore fibers can be used as compact and robust filters in astronomical and other research and commercial applications. Strong ...

Iridium Oxide-reduced Graphene Oxide Nanohybrid Thin Film Modified Screen-printed Electrodes as Disposable Electrochemical Paper Microfluidic pH Sensors

A facile, controllable, inexpensive and green electrochemical synthesis of IrO2-graphene nanohybrid thin films is developed to fabricate an easy-to-use integrated paper microfluidic electrochemical pH sensor for resource-limited settings. Taking advantages from both pH meters and strips, the pH sensing platform is composed of hydrophobic barrier-patterned paper micropad (&#181;PAD) using polydimethylsiloxane (PDMS), screen-printed electrode (SPE) modified with IrO2-graphene films and molded acrylonitrile butadiene styrene (ABS) plastic holder. Repetitive cathodic potential cycling was employed for graphene oxide (GO) reduction which can completely remove electrochemically unstable oxygenated groups and generate a 2D defect-free homogeneous graphene thin film with excellent stability and electronic properties. A uniform and smooth IrO2 film in nanoscale grain size is anodically electrodeposited onto the graphene film, without any observable cracks. The resulting IrO2-RGO electrode showed slightly super-Nernstian responses from pH 2-12 in Britton-Robinson (B-R) buffers with good linearity, small hysteresis, low response time and reproducibility in different buffers, as well as low sensitivities to different interfering ionic species and dissolved oxygen. A simple portable digital pH meter is fabricated, whose signal is measured with a multimeter, using high input-impedance operational amplifier and consumer batteries. The pH values measured with the portable electrochemical paper-microfluidic pH sensors were consistent with those measured using a commercial laboratory pH meter with a glass electrode.

The study demonstrates the growth of iridium oxide-reduced graphene oxide (IrO2-RGO) nanohybrid thin films on irregular and rough screen-printed carbon substrate through a green electrochemical synthesis, and their implementation as a pH sensor with a patterned paper-fluidic platform.

Tek Elektrokimyasal Kağıt mikroakışkan pH Sensörler olarak iridyum Oksit azaltılmış Grafen Oksit nanohibrit İnce Film Modifiye Ekran baskılı Elektrotlar

A facile, controllable, inexpensive and green electrochemical synthesis of IrO2-graphene nanohybrid thin films is developed to fabricate an easy-to-use ...

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film synthesis) for the purpose of exploratory materials research. Certain materials pose a challenge wherein the traditional bulk Hall bar device fabrication method is insufficient to produce a measureable device for sample transport measurement, principally because the single crystal size is too small to attach wire leads to the sample in a Hall bar configuration. This can be, for example, because the first batch of a new material synthesized yields very small single crystals or because flakes of samples of one to very few monolayers are desired. In order to enable rapid characterization of materials that may be carried out in parallel with improvements to their growth methodology, a method of device fabrication for very small samples has been devised to permit the characterization of novel materials as soon as a preliminary batch has been produced. A slight variation of this methodology is applicable to producing devices using exfoliated samples of two-dimensional materials such as graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides (TMDs), as well as multilayer heterostructures of such materials. Here we present detailed protocols for the experimental device fabrication of fragments and flakes of novel materials with micron-sized dimensions onto substrate and subsequent measurement in a commercial superconducting magnet, dry helium close-cycle cryostat magnetotransport system at temperatures down to 0.300 K and magnetic fields up to 12 T.

We describe the methodology of mechanical exfoliation and deposition of flakes of novel materials with micron-sized dimensions onto substrate, fabrication of experimental device structures for transport experimentation, and the magnetotransport measurement in a dry helium close-cycle cryostat at temperatures down to 0.300 K and magnetic fields up to 12 T.

Yeni Malzemelerin Düşük sıcaklık Magnetotransport Ölçüm İleri Deneysel Yöntemler

Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film ...

Method Development for Contactless Resonant Cavity Dielectric Spectroscopic Studies of Cellulosic Paper

The current analytical techniques for characterizing printing and graphic arts substrates are largely ex situ and destructive. This limits the amount of data that can be obtained from an individual sample and renders it difficult to produce statistically relevant data for unique and rare materials. Resonant cavity dielectric spectroscopy is a non-destructive, contactless technique which can simultaneously interrogate both sides of a sheeted material and provide measurements which are suitable for statistical interpretations. This offers analysts the ability to quickly discriminate between sheeted materials based on composition and storage history. In this methodology article, we demonstrate how contactless resonant cavity dielectric spectroscopy may be used to differentiate between paper analytes of varying fiber species compositions, to determine the relative age of the paper, and to detect and quantify the amount of post-consumer waste (PCW) recycled fiber content in manufactured office paper.

A protocol for the non-destructive analysis of the fiber content and relative age of paper.

Temassız Rezonans Kavite Dielektrik Spektroskopik Çalışmalar için Yöntem Geliştirme Selülozik Kağıt

The current analytical techniques for characterizing printing and graphic arts substrates are largely ex situ and destructive. This limits the amount of ...