The long-standing collaboration with Chang-Beom Eom at the University of Wisconsin-Madison, who provided the LAO/STO samples, is gratefully acknowledged. Video editing assistance from Christopher Solis is greatly appreciated. This work is supported by NSF (DMR-1104191, DMR-1124131), ARO (W911NF-08-1-0317), and AFOSR (FA9550-10-1-0524, FA9550-12-1-0268, FA9550-12-1-0057).

1，获取LAO / STO异质<ol><li>获得氧化物异质结构由老挝3.4单位细胞对TiO 2结尾的STO基片脉冲激光沉积生长的。样品成长之详情载于文献22中描述。 </li></ol> 2，光刻样品的处理建立电接触到老挝/ STO界面，与焊盘布线画布到芯片载体。各个处理步骤的详细说明如下。 <ol><li>旋光刻胶<ol><li>旋转光致抗蚀剂上的样品，在600 rpm离心5秒，然后在4,000 rpm下进行30秒。光致抗蚀剂层将约2微米厚。烤的试样在95℃下1分钟。 </li></ol></li><li>使用掩模对准器320处的光线为100秒为5毫瓦/厘米2的剂量曝光光致抗蚀剂。 </li><li>开发在光致抗蚀剂显影剂的光致抗蚀剂FO中R 1分钟。 </li><li>离子铣削<ol><li>使用氩离子磨到不属于光致抗蚀剂的区域去除材料的15纳米（LAO和STO）。将样品在一个22.5°的角度，以垂直于进入的氩离子束的方向。如果氩离子刻蚀速率未校准，进行校准运行，以确保材料的正确金额被删除。利用原子力显微镜或等效profilmetry确定蚀刻深度。 </li></ol></li><li> Ti和Au，直流溅射<ol><li>存款4纳米钛，那么25纳米金上的样品，以使使金与暴露STO层电接触。溅射压力的范围为2-6×10 -7乇，溅射发生与样品在室温下。预溅射钛为10分钟，使用快门关闭，在100 W，然后打开快门和溅射20秒，在100瓦特完成后，立即在50瓦的预溅射金为1分钟，然后溅射金为30秒至样品在50 W·卡利BRATE以产生所需的Ti和Au的厚度的时间。 </li></ol></li><li>剥离<ol><li>用丙酮/异丙醇超声洗涤以从样品表面除去光致抗蚀剂。 </li></ol></li><li>第二层<ol><li>第二光刻工艺，不含步骤4（ 即 ，不包括离子铣削），是用来建立金线连接到各个键合焊盘。这两个图案必须很好对齐，以确保它们不会产生电气短路。 </li></ol></li><li>等离子清洗。 <ol><li>一个IPC桶式蚀刻来除去在图案沟槽中的光致抗蚀剂残余物。用在100 W和1乇氩气1分钟仪器</li></ol></li></ol> 3，焊线样品来准备写作<ol><li>与28引脚可挂载老挝/ STO样品在芯片载体（ 图2A）。 </li><li>焊线结构</li></ol>注：使用引线键合机，使电ç在样品上键合焊盘和芯片载体之间onnections。附1密耳（25微米）金线的电气触点和芯片载体之间。写纳米结构 4。写纳米结构<ol><li>建立一个非正式的导电纳米结构（ 图3A）的草图。 </li><li>打开可伸缩矢量图形（SVG）的编辑器（ 图3B）。 <ol><li>使用模板或定义窗口的大小以匹配原子力显微镜图像。 </li><li>装入样品的AFM图像到SVG编辑器。 </li><li>建立覆盖在原子力显微镜图像上纳米结构的元素。 </li></ol></li><li>加载SVG文件到纳米光刻方案。 </li><li>运行光刻软件创建一个导电纳米结构。 <ol><li>使用V 提示 = +10 V创建的纳米结构，和V 提示 = -10 V擦除纳米结构。 </li><li>将C-AFM针尖的速度范围从200毫微米/秒至2微米/秒。 </li></ol></li></ol> 5，冷却设备和进行测量<ol><li>关闭所有的白灯，并使用红色滤镜/光源。 </li><li>从AFM系统提取样品。 </li><li>样品装入稀释制冷机（A）。 </li><li>测量电阻与温度（B）作为样品冷却。 </li><li>在低温下（C）测量传输特性。 </li></ol>

<ol>
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The authors have nothing to disclose.

Successful creation of nanostructures depends on several critical steps. It is important that the LAO/STO samples are grown with a thickness that is known to be at the boundary between the insulating and conductive phase. (Details of sample growth fall outside the scope of this paper, but are crucial for overall success.) Second, it is important to have relative humidity within the range 25-45% for successful c-AFM writing. Values below 25% are unlikely to produce conductive nanostructures, while too high humidity will generally produce uncontrollably large features. Also, temperature control of the AFM is important if the c-AFM tip needs to achieve precise registry over long periods of time. Once the nanostructures are created, they must be placed in a vacuum environment if experiments lasting longer than a few hours are to be performed. For the experiments described here, the structure is created and within minutes transferred to a vacuum environment.
It is recommend before writing that a &#8220;writing test&#8221; be performed on all relevant electrodes. In such a test, two virtual electrodes are first created, and a single nanowire is written while simultaneously monitoring the conductance. A similar test of erasure can be performed by &#8220;cutting&#8221; the nanowire shortly afterwards. If the nanostructure is decaying rapidly, the issue is most likely due either to the interfacial contacts or the canvas itself. To distinguish between these two effects, a four-terminal measurement of the conductance should be performed, and the two-terminal conductance should be compared with the four-terminal conductance as a function of time. If the two-terminal conductance is decaying more rapidly than the four-terminal conductance, then the issue is related to the electrical contacts to the interface. If the four-terminal conductance is decaying at a comparable rate, then most likely the canvas is not suitable and should be replaced.
There are natural limitations of the current method for creating nanostructures. Specifically, the writing speed for the smallest devices is limited to a few hundred nanometers per second. Speeds far above that value lead to unpredictable results. Use of parallel writing techniques are possible27,28, but are not highly developed and have their own drawbacks. The size of nanostructures that can be created is naturally limited by the scan range of the AFM being used. A high-quality AFM with closed-loop feedback in the two scan directions is highly recommended. Tracking of point-like objects on the sample surface should be performed to monitor temporal drift of the sample.
Once creation of conductive nanostructures at oxide interfaces has been mastered, there are a wide range of experimental directions that can be explored. Using this technique, a wide variety of nanostructures and devices have already been demonstrated, including nanowires18, tunnel barriers29, rectifying junctions30, field-effect transistors18, single-electron transistors31, superconducting nanowires32, nanoscale optical detectors33, and nanoscale THz emitters and detectors34.

氧化物异质1-5表现出了显着各种各样的突发物理现象这都是有趣的科学和应用4可能有用。特别是， 铝酸镧（LAO）和钛酸锶（STO）6之间的界面上可以显示出绝缘性，导电，超导7，铁电状8和9铁磁行为。在2006年，Thiel 等人发现10，有一个锐利的绝缘体-金属转变为LAO层的厚度增加时，为4的单元电池（4UC）的临界厚度。据事后证明3uc-LAO/STO结构表现出了可以在本地用导电原子力显微镜（C-AFM）探针11被控制的迟滞过渡。 氧化接口，如铝酸镧/ 钛酸锶的属性取决于传导的存在或不存在电子界面处。这些电子可以通过顶部栅电极12,13，背门10被控制，表面吸附物14，铁电层15,16和c-AFM光刻11。的C-AFM平版印刷的独特的特点是非常小的纳米级功能可以被创建。 电顶部门控，并结合2维限制，通常被用来创建在III-V族半导体17的量子点。备选地，准一维半导体纳米线可以电由接近门控。该方法用于制备这些结构是耗时的且通常不可逆的。与此相反，在C-原子力显微镜光刻技术是可逆的，即纳米结构可以为一个实验被创建，然后在“擦除”（类似白板）。通常，C-​​AFM写作与施加在针尖正电压进行的，而，擦除使用负电压被执行。创建特定结构所需的时间依赖于该设备的复杂性，但通常不超过30分钟;大部分时间都花在擦除画布。典型的空间分辨率约为10纳米，但2纳米可以创建18用适当的调整功能小。 纳米级的制造步骤的详细说明如下。这里所提供的细节，应足以允许类似的实验，以通过感兴趣的研究人员进行。这里所描述的方法具有超过用于在半导体制造的电子的纳米结构的传统光刻方法的许多优点。 这里所描述的C-AFM光刻方法是一个更广泛的类的扫描探针为基础的光刻技术的努力，包括扫描阳极氧化19，蘸笔纳米光刻20，压电图案的一部分21，依此类推。这里所描述的C-原子力显微镜技术，再加上使用的新型氧化物界面，可以产生一些最精密的电子结构与前所未有的各种物理性能。

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		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Ion Mill</td>
			<td>Commonwealth Scientific</td>
			<td>8C</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Sputtering System</td>
			<td>Leybold-Heraeus</td>
			<td>Z-650</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Barrel Etcher</td>
			<td>Branson/IPC</td>
			<td>3000C</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Wire Bonder</td>
			<td>Westbond</td>
			<td>7700E</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">AFM</td>
			<td>Asylum Research</td>
			<td>MFP-3D</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Dilution Refrigerator</td>
			<td>Quantum Design</td>
			<td>P850</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Ultrasonic Wash Machine</td>
			<td>Fisher Scientific</td>
			<td>15-335-6</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Current Amplifier</td>
			<td>Femto</td>
			<td>DLPCA-200</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;"></td>
			<td></td>
			<td></td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Materials</td>
			<td></td>
			<td></td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">LaAlO3/SrTiO3</td>
			<td>Prof. Chang-Beom Eom</td>
			<td>N/A</td>
			<td>5mm x 1mm with ~3.4 unit cells of LAO (See Reference 18)</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Photoresist</td>
			<td>AZ Electronic Materials</td>
			<td>P4210</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Developer</td>
			<td>AZ Electronic Materials</td>
			<td>400K</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Acetone</td>
			<td>Fisher Scientific</td>
			<td>A929SK-4</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Isopropyl Alcohol</td>
			<td>Fisher Scientific</td>
			<td>A459-1</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Deionized Water</td>
			<td>Fisher Scientific</td>
			<td>23-290-065</td>
			<td></td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Gold Wire</td>
			<td>DuPont</td>
			<td>5771</td>
			<td>1 mil diameter</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Chip Carrier</td>
			<td>NTK Technologies</td>
			<td>IRK28F1-5451D</td>
			<td></td>
		</tr>
	</tbody>
</table>

writing and low-temperature characterization of oxide nanostructures

Oxide nanoelectronics is a rapidly growing field which seeks to develop novel materials with multifunctional behavior at nanoscale dimensions. Oxide interfaces exhibit a wide range of properties that can be controlled include conduction, piezoelectric behavior, ferromagnetism, superconductivity and nonlinear optical properties. Recently, methods for controlling these properties at extreme nanoscale dimensions have been discovered and developed. Here are described explicit step-by-step procedures for creating LaAlO3/SrTiO3 nanostructures using a reversible conductive atomic force microscopy technique. The processing steps for creating electrical contacts to the LaAlO3/SrTiO3 interface are first described. Conductive nanostructures are created by applying voltages to a conductive atomic force microscope tip and locally switching the LaAlO3/SrTiO3 interface to a conductive state. A versatile nanolithography toolkit has been developed expressly for the purpose of controlling the atomic force microscope (AFM) tip path and voltage. Then, these nanostructures are placed in a cryostat and transport measurements are performed. The procedures described here should be useful to others wishing to conduct research in oxide nanoelectronics.

此处显示的结果是代表可以由这个类纳米结构的展示的传输行为，并进行了详细23-26别处所述。在此示例中，纳米线腔已从3.3晶胞LAO / STO异质构造（ 图4）。导电通路（以绿色显示）是典型的10纳米宽，由纳米线确定的“切割”实验11。尖速度和电压为每个段是从光刻前面板（ 图4B）可独立配置的，为的是尖端的写入速度。 “虚拟电极”与界面接触该接口确保有到纳米结构的导电性高的电连接。 纳米结构被写入后，它被转移到稀释制冷机。暴露在光线下或低于550纳米会产生不希望的光电导，所以它是IMPortant到设备在黑暗或有一个红色的“暗室”光（ 图5A）的帮助下转移。电气连接应在室温下进行，并与大多数半导体纳米结构，应十分注意在低温下不断变化的电气连接时服用。如果设备受到静电放电，它最有可能成为绝缘。值得注意的是，该装置的功能可以通过“循环”的温度为300 K和冷却再回收。 时的冷却时间，这是常规监测两个终端电阻，和连四端子电阻作为温度的函数。对于这些测量的交流电压（通常为〜1毫伏）在低频率（&lt;10赫兹）施加到电极中的一个，而将交流电流使用一个跨阻抗放大器测量。锁定在解调和使用家庭开发的锁相放大器进行滤波。交流立方米目前的监测作为温度的（ 图5B）的函数。 一旦设备被冷却到稀释制冷机（50谷）的基部的温度，四端传输执行测量（ 图5C）。对于这些测量，电流是通过该装置的主信道源，而在器件电压被同时测量。代替用锁定放大器，一个完整的电流 - 电压测量（IV）的微量测定。此方法包含更多信息和差分传导可以通过数值微分计算。对于特定的设备中，差分传导被测量为侧栅电压 V SG的函数。此栅极允许改变该装置的化学势。通过该装置的传输显示出强大的非单调的依赖，这表明在该库仑阻塞发生为较小的值，并STRO区域纳克超导较大对V SG值。关于此类设备的物理解释详细情况将在其他地方描述。 <img alt="图1" src="/files/ftp_upload/51886/51886fig1highres.jpg" /> 。图1光刻加工步骤第1步：旋光刻胶。步骤2：使用掩模对准曝光光致抗蚀剂。第3步：开发光致抗蚀剂。步骤4：离子铣削。步骤5：直流溅射法沉积Ti和Au。第6步：剥离。步骤7：沉积第二层。第8步：等离子清洗。 <img alt="图2" src="/files/ftp_upload/51886/51886fig2highres.jpg" /> 图2的光刻图案LAO / STO异质影像。（A）图片显示粘结到芯片载体5mm x 5mm的样品线（B）<html>光学图像显示焊盘与画布之一。（C）特写一个单一的画布。 <a href="https://www.jove.com/files/ftp_upload/51886/51886fig2highres.jpg" target="_blank">请点击此处查看该图的放大版本。</a> <img alt="图3" src="/files/ftp_upload/51886/51886fig3highres.jpg" /> 图3（A）非正式LAO / STO纳米结构的设计（B）纳米结构的采用开源的可伸缩矢量图形（SVG）的编辑器精确布局。 <img alt="图4" src="/files/ftp_upload/51886/51886fig4highres.jpg" /> 图4（A）平版印刷前面板为C-AFM图案（B）从截图3D仿真显示位置和C-AFM针尖电压。w.jove.com/files/ftp_upload/52058/52058fig4large.jpg“目标=”_blank“&gt;请点击这里查看该图的放大版本。 <img alt="图5" src="/files/ftp_upload/51886/51886fig5highres.jpg" /> 图5（a）劳/ STO纳米结构被插入稀释制冷机（B）取样电阻的监测，因为它是从300K冷却到50 mK的。设备的四端微分电导（三）监测的一个函数侧栅极电压VSG和两端的电压装置（4T版）。西门子（S）为单位，并显示电压强度图显示在伏（V）为单位。

Watch this Scientific Journal Video about Writing and Low-Temperature Characterization of Oxide Nanostructures at JoVE.com

Writing and Low-Temperature Characterization of Oxide Nanostructures

Oxide nanostructures provide new opportunities for science and technology. The interfacial conductivity between LaAlO3 and SrTiO3 can be controlled with near-atomic precision using a conductive atomic force microscopy technique. The protocol for creating and measuring conductive nanostructures at LaAlO3/SrTiO3 interfaces is demonstrated.

写作和氧化物纳米结构的低温特性

Oxide nanoelectronics is a rapidly growing field which seeks to develop novel materials with multifunctional behavior at nanoscale dimensions.  Oxide ...

writing-and-low-temperature-characterization-of-oxide-nanostructures

Research

JoVE Journal

Engineering

9.8K 次观看.  University of Pittsburgh. Oxide nanostructures provide new opportunities for science and technology. The interfacial conductivity between LaAlO3 and SrTiO3 can be controlled with near-atomic precision using a conductive atomic force microscopy technique. The protocol for creating and measuring conductive nanostructures at LaAlO3/SrTiO3 interfaces is demonstrated.

视频: Writing and Low-Temperature Characterization of Oxide Nanostructures

A Method to Fabricate Disconnected Silver Nanostructures in 3D

The standard nanofabrication toolkit includes techniques primarily aimed at creating 2D patterns in dielectric media. Creating metal patterns on a submicron scale requires a combination of nanofabrication tools and several material processing steps. For example, steps to create planar metal structures using ultraviolet photolithography and electron-beam lithography can include sample exposure, sample development, metal deposition, and metal liftoff. To create 3D metal structures, the sequence is repeated multiple times. The complexity and difficulty of stacking and aligning multiple layers limits practical implementations of 3D metal structuring using standard nanofabrication tools. Femtosecond-laser direct-writing has emerged as a pre-eminent technique for 3D nanofabrication.1,2 Femtosecond lasers are frequently used to create 3D patterns in polymers and glasses.3-7 However, 3D metal direct-writing remains a challenge. Here, we describe a method to fabricate silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm. The method enables the fabrication of patterns not feasible using other techniques, such as 3D arrays of disconnected silver voxels.8 Disconnected 3D metal patterns are useful for metamaterials where unit cells are not in contact with each other,9 such as coupled metal dot10,11or coupled metal rod12,13 resonators. Potential applications include negative index metamaterials, invisibility cloaks, and perfect lenses.
In femtosecond-laser direct-writing, the laser wavelength is chosen such that photons are not linearly absorbed in the target medium. When the laser pulse duration is compressed to the femtosecond time scale and the radiation is tightly focused inside the target, the extremely high intensity induces nonlinear absorption. Multiple photons are absorbed simultaneously to cause electronic transitions that lead to material modification within the focused region. Using this approach, one can form structures in the bulk of a material rather than on its surface.
Most work on 3D direct metal writing has focused on creating self-supported metal structures.14-16 The method described here yields sub-micrometer silver structures that do not need to be self-supported because they are embedded inside a matrix. A doped polymer matrix is prepared using a mixture of silver nitrate (AgNO3), polyvinylpyrrolidone (PVP) and water (H2O). Samples are then patterned by irradiation with an 11-MHz femtosecond laser producing 50-fs pulses. During irradiation, photoreduction of silver ions is induced through nonlinear absorption, creating an aggregate of silver nanoparticles in the focal region. Using this approach we create silver patterns embedded in a doped PVP matrix. Adding 3D translation of the sample extends the patterning to three dimensions.

Femtosecond-laser direct-writing is frequently used to create three-dimensional (3D) patterns in polymers and glasses. However, patterning metals in 3D remains a challenge. We describe a method for fabricating silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm.

一个断开连接的银纳米结构的方法来制作的3D

The standard nanofabrication toolkit includes  techniques primarily aimed at creating 2D patterns in dielectric media. Creating  metal patterns on a ...

科研

工程学

Probing and Mapping Electrode Surfaces in Solid Oxide Fuel Cells

Solid oxide fuel cells (SOFCs) are potentially the most efficient and cost-effective solution to utilization of a wide variety of fuels beyond hydrogen 1-7. The performance of SOFCs and the rates of many chemical and energy transformation processes in energy storage and conversion devices in general are limited primarily by charge and mass transfer along electrode surfaces and across interfaces. Unfortunately, the mechanistic understanding of these processes is still lacking, due largely to the difficulty of characterizing these processes under in situ conditions. This knowledge gap is a chief obstacle to SOFC commercialization. The development of tools for probing and mapping surface chemistries relevant to electrode reactions is vital to unraveling the mechanisms of surface processes and to achieving rational design of new electrode materials for more efficient energy storage and conversion2. Among the relatively few in situ surface analysis methods, Raman spectroscopy can be performed even with high temperatures and harsh atmospheres, making it ideal for characterizing chemical processes relevant to SOFC anode performance and degradation8-12. It can also be used alongside electrochemical measurements, potentially allowing direct correlation of electrochemistry to surface chemistry in an operating cell. Proper in situ Raman mapping measurements would be useful for pin-pointing important anode reaction mechanisms because of its sensitivity to the relevant species, including anode performance degradation through carbon deposition8, 10, 13, 14 ("coking") and sulfur poisoning11, 15 and the manner in which surface modifications stave off this degradation16. The current work demonstrates significant progress towards this capability. In addition, the family of scanning probe microscopy (SPM) techniques provides a special approach to interrogate the electrode surface with nanoscale resolution. Besides the surface topography that is routinely collected by AFM and STM, other properties such as local electronic states, ion diffusion coefficient and surface potential can also be investigated17-22. In this work, electrochemical measurements, Raman spectroscopy, and SPM were used in conjunction with a novel test electrode platform that consists of a Ni mesh electrode embedded in an yttria-stabilized zirconia (YSZ) electrolyte. Cell performance testing and impedance spectroscopy under fuel containing H2S was characterized, and Raman mapping was used to further elucidate the nature of sulfur poisoning. In situ Raman monitoring was used to investigate coking behavior. Finally, atomic force microscopy (AFM) and electrostatic force microscopy (EFM) were used to further visualize carbon deposition on the nanoscale. From this research, we desire to produce a more complete picture of the SOFC anode.

We present a unique platform for characterizing electrode surfaces in solid oxide fuel cells (SOFCs) that allows simultaneous performance of multiple characterization techniques (e.g. in situ Raman spectroscopy and scanning probe microscopy alongside electrochemical measurements). Complementary information from these analyses may help to advance toward a more profound understanding of electrode reaction and degradation mechanisms, providing insights into rational design of better materials for SOFCs.

在固体氧化物燃料电池电极表面的探测和测绘

Solid oxide fuel cells (SOFCs) are potentially the most efficient and cost-effective solution to utilization of a wide variety of fuels beyond hydrogen ...

Visible-light Induced Reduction of Graphene Oxide Using Plasmonic Nanoparticle

Present work demonstrates the simple, chemical free, fast, and energy efficient method to produce reduced graphene oxide (r-GO) solution at RT using visible light irradiation with plasmonic nanoparticles. The plasmonic nanoparticle is used to improve the reduction efficiency of GO. It only takes 30 min&#160;at RT by illuminating the solutions with Xe-lamp, the r-GO solutions can be obtained by completely removing gold nanoparticles through simple centrifugation step. The spherical gold nanoparticles (AuNPs) as compared to the other nanostructures is the most suitable plasmonic nanostructure for r-GO preparation. The reduced graphene oxide prepared using visible light and AuNPs was equally qualitative as chemically reduced graphene oxide, which was supported by various analytical techniques such as UV-Vis spectroscopy, Raman spectroscopy, powder XRD and XPS. The reduced graphene oxide prepared with visible light shows excellent quenching properties over the fluorescent molecules modified on ssDNA and excellent fluorescence recovery for target DNA detection. The r-GO prepared by recycled AuNPs is found to be of same quality with that of chemically reduced r-GO. The use of visible light with plasmonic nanoparticle demonstrates the good alternative method for r-GO synthesis.

A simple protocol for the preparation of reduced graphene oxide using visible light and plasmonic nanoparticle is described.

可见光诱导的还原氧化石墨烯的使用电浆纳米粒子

Present work demonstrates the simple, chemical free, fast, and energy efficient method to produce reduced graphene oxide (r-GO) solution at RT using ...

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal&#8211;semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 &#937;&#8722;1 cm&#8722;1, with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed. Similar results can be obtained for other layer semiconductor materials such as MoS2 and WS2.

We describe the approaches for the device fabrication and electrical characterization of molybdenum diselenide (MoSe2) layer semiconductor nanostructures with different thicknesses. In addition, the fabrication of ohmic contacts for MoSe2-layer nanocrystals by the focused-ion beam deposition method using platinum (Pt) as a contact metal is described.

欧姆接触制造用聚焦离子束技术和电气特性的半导体层的纳米结构

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor ...

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

We demonstrate a method for the low temperature growth (350 &#176;C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive thin-films. Due to the low growth temperature, the process allows integration with modern low-&#954; dielectrics and some flexible substrates. The process is compatible with standard semiconductor fabrication, and a method for the fabrication of electrical 4-point probe test structures for vertical interconnect test structures is presented. Using scanning electron microscopy the morphology of the CNT bundles is investigated, which demonstrates vertical alignment of the CNT and can be used to tune the CNT growth time. With Raman spectroscopy the crystallinity of the CNT is investigated. It was found that the CNT have many defects, due to the low growth temperature. The electrical current-voltage measurements of the test vertical interconnects displays a linear response, indicating good ohmic contact was achieved between the CNT bundle and the top and bottom metal electrodes. The obtained resistivities of the CNT bundle are among the average values in the literature, while a record-low CNT growth temperature was used.

A method for the growth of low temperature vertically-aligned carbon nanotubes, and the subsequent fabrication of vertical interconnect electrical test structures using semiconductor fabrication is presented.

低温碳纳米管垂直互连的制作兼容半导体技术

We demonstrate a method for the low temperature growth (350 &#176;C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive ...

Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly known as plasmonic effects, play an important role. Research in this field has, however, been impeded owing to the difficulty of fabricating devices containing the desired functional metal nanostructures. In order to provide a viable strategy to this issue, we herein show a transfer printing-based approach that allows the quick and low-cost integration of designed metal nanostructures with a variety of device architectures, including solar cells. Nanopillar poly(dimethylsiloxane) (PDMS) stamps were fabricated from a commercially available nanohole plastic film as a master mold. On this nanopatterned PDMS stamps, Ag films were deposited, which were then transfer-printed onto block copolymer (binding layer)-coated hydrogenated microcrystalline Si (&#181;c-Si:H) surface to afford ordered Ag nanodisk structures. It was confirmed that the resulting Ag nanodisk-incorporated &#181;c-Si:H solar cells show higher performances compared to a cell without the transfer-printed Ag nanodisks, thanks to plasmonic light trapping effect derived from the Ag nanodisks. Because of the simplicity and versatility, further device application would also be feasible thorough this approach.

A viable transfer printing-based methodology to introduce plasmonic metal nanostructures in solar cells is described. Using nanopillar poly(dimethylsiloxane) stamps, an Ag-based ordered nanodisk array was integrated with standard hydrogenated microcrystalline Si solar cells, which led to improved device performances due to plasmonic light trapping.

灯光诱杀银纳米结构通过转移印花在氢化微晶硅太阳能电池集成

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly ...

Writing Bragg Gratings in Multicore Fibers

Fiber Bragg gratings in multicore fibers can be used as compact and robust filters in astronomical and other research and commercial applications. Strong suppression at a single wavelength requires that all cores have matching transmission profiles. These gratings cannot be inscribed using the same method as for single-core fibers because the curved surface of the cladding acts as a lens, focusing the incoming UV laser beam and causing variations in exposure between cores. Therefore we use an additional optical element to ensure that the beam shape does not change while passing through the cross-section of the multicore fiber. This consists of a glass capillary tube which has been polished flat on one side, which is then placed over the section of the fiber to be inscribed. The laser beam enters the fiber through the flat surface of the capillary tube and hence maintains its original dimensions. This paper demonstrates the improvements in core-to-core uniformity for a 7-core fiber using this method. The technique can be generalized to larger multicore fibers.

We describe a technique for inscribing identical fiber Bragg gratings into each core of a multicore fiber. This is achieved by introducing an additional surface into the optical path to mitigate lensing by the curved surface of the fiber cladding.

写布拉格光栅在多核纤维

Fiber Bragg gratings in multicore fibers can be used as compact and robust filters in astronomical and other research and commercial applications. Strong ...

Iridium Oxide-reduced Graphene Oxide Nanohybrid Thin Film Modified Screen-printed Electrodes as Disposable Electrochemical Paper Microfluidic pH Sensors

A facile, controllable, inexpensive and green electrochemical synthesis of IrO2-graphene nanohybrid thin films is developed to fabricate an easy-to-use integrated paper microfluidic electrochemical pH sensor for resource-limited settings. Taking advantages from both pH meters and strips, the pH sensing platform is composed of hydrophobic barrier-patterned paper micropad (&#181;PAD) using polydimethylsiloxane (PDMS), screen-printed electrode (SPE) modified with IrO2-graphene films and molded acrylonitrile butadiene styrene (ABS) plastic holder. Repetitive cathodic potential cycling was employed for graphene oxide (GO) reduction which can completely remove electrochemically unstable oxygenated groups and generate a 2D defect-free homogeneous graphene thin film with excellent stability and electronic properties. A uniform and smooth IrO2 film in nanoscale grain size is anodically electrodeposited onto the graphene film, without any observable cracks. The resulting IrO2-RGO electrode showed slightly super-Nernstian responses from pH 2-12 in Britton-Robinson (B-R) buffers with good linearity, small hysteresis, low response time and reproducibility in different buffers, as well as low sensitivities to different interfering ionic species and dissolved oxygen. A simple portable digital pH meter is fabricated, whose signal is measured with a multimeter, using high input-impedance operational amplifier and consumer batteries. The pH values measured with the portable electrochemical paper-microfluidic pH sensors were consistent with those measured using a commercial laboratory pH meter with a glass electrode.

The study demonstrates the growth of iridium oxide-reduced graphene oxide (IrO2-RGO) nanohybrid thin films on irregular and rough screen-printed carbon substrate through a green electrochemical synthesis, and their implementation as a pH sensor with a patterned paper-fluidic platform.

氧化铱还原氧化石墨烯纳米杂化薄膜修饰丝网印刷电极一次性电化学微流控纸pH传感器

A facile, controllable, inexpensive and green electrochemical synthesis of IrO2-graphene nanohybrid thin films is developed to fabricate an easy-to-use ...

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film synthesis) for the purpose of exploratory materials research. Certain materials pose a challenge wherein the traditional bulk Hall bar device fabrication method is insufficient to produce a measureable device for sample transport measurement, principally because the single crystal size is too small to attach wire leads to the sample in a Hall bar configuration. This can be, for example, because the first batch of a new material synthesized yields very small single crystals or because flakes of samples of one to very few monolayers are desired. In order to enable rapid characterization of materials that may be carried out in parallel with improvements to their growth methodology, a method of device fabrication for very small samples has been devised to permit the characterization of novel materials as soon as a preliminary batch has been produced. A slight variation of this methodology is applicable to producing devices using exfoliated samples of two-dimensional materials such as graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides (TMDs), as well as multilayer heterostructures of such materials. Here we present detailed protocols for the experimental device fabrication of fragments and flakes of novel materials with micron-sized dimensions onto substrate and subsequent measurement in a commercial superconducting magnet, dry helium close-cycle cryostat magnetotransport system at temperatures down to 0.300 K and magnetic fields up to 12 T.

We describe the methodology of mechanical exfoliation and deposition of flakes of novel materials with micron-sized dimensions onto substrate, fabrication of experimental device structures for transport experimentation, and the magnetotransport measurement in a dry helium close-cycle cryostat at temperatures down to 0.300 K and magnetic fields up to 12 T.

对于新材料的低温磁输运测量先进的实验方法

Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film ...

Fabrication and Characterization of Superconducting Resonators

Superconducting microwave resonators are of interest for a wide range of applications, including for their use as microwave kinetic inductance detectors (MKIDs) for the detection of faint astrophysical signatures, as well as for quantum computing applications and materials characterization. In this paper, procedures are presented for the fabrication and characterization of thin-film superconducting microwave resonators. The fabrication methodology allows for the realization of superconducting transmission-line resonators with features on both sides of an atomically smooth single-crystal silicon dielectric. This work describes the procedure for the installation of resonator devices into a cryogenic microwave testbed and for cool-down below the superconducting transition temperature. The set-up of the cryogenic microwave testbed allows one to do careful measurements of the complex microwave transmission of these resonator devices, enabling the extraction of the properties of the superconducting lines and dielectric substrate (e.g., internal quality factors, loss and kinetic inductance fractions), which are important for device design and performance.

Superconducting microwave resonators are of interest for detection of light, quantum computing applications and materials characterization. This work presents a detailed procedure for fabrication and characterization of superconducting microwave resonator scattering parameters.

制备与表征超导谐振器的

Superconducting microwave resonators are of interest for a wide range of applications, including for their use as microwave kinetic inductance detectors ...