هذا العمل كان يدعمه "المجلس الوطني للعلوم"، تايوان وبموجب العقد لا معظم 105-2112-M-003-016-MY3. هذا العمل أيضا في الجزء أيده "المختبرات الوطنية لجهاز نانو" ومختبر شعاع ه في الهندسة الكهربائية من جامعة تايوان الوطنية.

<ol>
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J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Carbon+nanotubes:+present+and+future+commercial+applications.">Carbon nanotubes: present and future commercial applications.</a> Science (New York, N.Y.). 339 (6119), 535-539 (2013).</li><li>Eatemadi, A., Daraee, H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Carbon+nanotubes:+Properties,+synthesis,+purification,+and+medical+applications.">Carbon nanotubes: Properties, synthesis, purification, and medical applications.</a> Nanoscale Research Letters. 9 (1), 1-13 (2014).</li><li>Lan, Y. W., Chang, W. 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M., Tort-Colet, N., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Mapping+brain+activity+with+flexible+graphene+micro-transistors.">Mapping brain activity with flexible graphene micro-transistors.</a> 2D Materials. 4 (2), 25040 (2017).</li><li>Zhu, Z., Murtaza, I., Meng, H., Huang, W. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Thin+film+transistors+based+on+two+dimensional+graphene+and+graphene/semiconductor+heterojunctions.">Thin film transistors based on two dimensional graphene and graphene/semiconductor heterojunctions.</a> RSC Advances. 7 (28), 17387-17397 (2017).</li><li>Kim, S. J., Choi, K., Lee, B., Kim, Y., Hong, B. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Materials+for+Flexible,+Stretchable+Electronics:+Graphene+and+2D+Materials.">Materials for Flexible, Stretchable Electronics: Graphene and 2D Materials.</a> Annual Review of Materials Research. 45 (1), 63-84 (2015).</li><li>Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V., Kis, A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=2D+transition+metal+dichalcogenides.">2D transition metal dichalcogenides.</a> Nature Reviews Materials. 2, (2017).</li><li>Kolobov, A. V., Tominaga, J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Emerging Applications of 2D TMDCs. 239, 473-512 (2016).</li><li>Nguyen, L. N., Lan, Y. W., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Resonant+tunneling+through+discrete+quantum+states+in+stacked+atomic-layered+MoS2.">Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2.</a> Nano Letters. 14 (5), 2381-2386 (2014).</li><li>Torres, C. M., Lan, Y. W., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-Current+Gain+Two-Dimensional+MoS2-Base+Hot-Electron+Transistors.">High-Current Gain Two-Dimensional MoS2-Base Hot-Electron Transistors.</a> Nano Letters. 15 (12), 7905-7912 (2015).</li><li>Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., Hersam, M. C. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Emerging+Device+Applications+for+Semiconducting+Two-Dimensional+Transition+Metal+Dichalcogenides.">Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides.</a> ACS Nano. 8 (2), 1102-1120 (2014).</li><li>Choi, W., Choudhary, N., Han, G. H., Park, J., Akinwande, D., Lee, Y. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Recent+development+of+two-dimensional+transition+metal+dichalcogenides+and+their+applications.">Recent development of two-dimensional transition metal dichalcogenides and their applications.</a> Materials Today. 20 (3), 116-130 (2017).</li><li>Xiao, H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Introduction to Semiconductor Manufacturing Technology, Second Edition. , (2012).</li><li>Lin, C. Y., Zhu, X., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Atomic-Monolayer+Two-Dimensional+Lateral+Quasi-Heterojunction+Bipolar+Transistors+with+Resonant+Tunneling+Phenomenon.">Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon.</a> ACS Nano. 11 (11), 11015-11023 (2017).</li><li>Qi, J., Lan, Y. W., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Piezoelectric+effect+in+chemical+vapour+deposition-grown+atomic-monolayer+triangular+molybdenum+disulfide+piezotronics.">Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics.</a> Nature Communications. 6, (2015).</li></ol>

الكتاب ليس لها علاقة بالكشف عن.

في هذه المقالة، وأثبتت الإجراءات المفصلة لاختلاق رواية الإلكترونيات استناداً إلى المواد 2D في مقياس نانومتر. نظراً لإجراءات إعداد نموذج لتطبيق كل الخلافات مع بعضها البعض، عمليات المتراكب يعاملون كالبروتوكول. إلكترون الزخرفة شعاع جنبا إلى جنب مع تصميم الموقع المادي، وتعريف القطب المعدني...

ومنذ العقود الماضية، البشرية تشهد السريع المتناقصة في حجم الترانزستورات، ونتيجة لذلك، زيادة هائلة في عدد الترانزستور في الدوائر المتكاملة (ICs). وهذا يؤكد التقدم المستمر في التكنولوجيا القائمة على السليكون التكميلية أكسيد معدني متمم (CMOS)1. وعلاوة على ذلك، يتم هذا الاتجاه الحالي في حجم وأداء الأجهزة ملفقة لا تزال على المسار مع قانون مور، الذي ينص على أن عدد الترانزستورات في الرقائق الإلكترونية، فضلا عن أدائها، ويتضاعف تقريبا كل سنتين2. ترانزستور CMOS موجودة في معظم، أن لم يكن كل، الأجهزة الإلكترونية المتوفرة في السوق، ومما يجعلها جزءا لا يتجزأ من حياة الإنسان. ونتيجة لهذا، هناك مطالب مستمرة لإدخال تحسينات على رقاقة الحجم والأداء التي قد تم دفع الشركات المصنعة للحفاظ على أثر قانون المسار مور.
ولسوء الحظ، يبدو قانون مور أن تقترب من نهايتها بسبب كمية الحرارة المتولدة كما هو أكثر السليكون الدوائر ويضيق مساحة صغيرة2. وهذا يدعو إلى أنواع جديدة من المواد التي يمكن أن توفر نفس، أن لم يكن أفضل، أداء كالسيليكون، وفي الوقت نفسه، يمكن أن تنفذ في نطاق أضيق نسبيا. ، مواد جديدة واعدة في الآونة الأخيرة مواضيع العديد من أبحاث العلوم المادية. بعض المواد مثل أحادي البعد (1-د) الكربون الأنابيب النانوية3،4،5،،من67، الجرافين 2D8،،من910، 11 , 12و15،14،13،ديتشالكوجينيديس (TMDs) المعادن الانتقالية17،،من1618، هي المرشحين جيدة يمكن استخدامها تكون بديلاً لمنظمات الإدارة الجماعية القائمة على السليكون ومواصلة المسار قانون مور.
تصنيع الأجهزة الصغيرة يتطلب تحديد دقيق للموقع بالمواد المضي قدما بنجاح في تقنيات التصنيع الأخرى مثل الطباعة الحجرية وتعريف القطب المعدني. لذا، صمم الطريقة المعروضة في هذه الورقة تلبية هذه الحاجة. مقارنة ب تقنيات تصنيع أشباه الموصلات التقليدية19، والنهج المعروضة في هذه الورقة خياط مزودة بتطوير الأجهزة الصغيرة التي تحتاج إلى مزيد من الاهتمام من حيث إيجاد مكان للمواد. ويهدف هذا الأسلوب تلفيق موثوق نانوماتيريال 2D الأجهزة، مثل الترانزستورات 2D عن طريق بوابة العودة و Q-هبتس، باستخدام عمليات تصنيع القياسية. هذا يمكن أن تخدم كمنصة للتطورات المستقبلية نانوديفيسي كما أنه يمهد الطريق نحو إنتاج أجهزة متقدمة مستقبلا على نطاق نانو.
في المقطع الشروع، تناقش عمليات تصنيع 2D الأجهزة المستندة إلى مواد هي: Q-ثنائية والترانزستور 2D عن طريق بوابة مرة أخرى بالتفصيل. إلكترون الزخرفة شعاع جنبا إلى جنب مع تصميم الموقع المادي، وتعريف القطب المعدني يشمل البروتوكول نظراً لأنها مطلوبة في كل من العمليات المذكورة. يناقش الجزء 1 عملية التصنيع خطوة خطوة س-هبتس20؛ ويوضح الجزء 2 نهج عالمي للحصول على بخار الكيميائية ترسب (الرسوم التعويضية) ثاني كبريتيد الموليبدينوم (MoS2) الترانزستور عن طريق بوابة العودة من نقل لانطلاقة21، الذي قد ثبت تماما في المادة. ويتضح تدفق عملية مفصلة في (الشكل 1).

<table><tbody><tr><td>E-gun Evaporator</td><td>AST</td><td>PEVA 600I</td><td></td></tr><tr><td>Au slug, 99.99%</td><td>Well-Being Enterprise Co</td><td>N/A</td><td></td></tr><tr><td>Ti slug, 99.99%</td><td>Well-Being Enterprise Co</td><td>N/A</td><td></td></tr><tr><td>E-beam Lithography System</td><td>Elionix</td><td>ELS7500-EX</td><td></td></tr><tr><td>Cold Wall CVD System</td><td>Sulfur Science</td><td>SCW600S</td><td></td></tr><tr><td>C-plane Sapphire substrate</td><td>Summit-Tech</td><td>X171999</td><td>(0001) &amp;plusmn; 0.2 &amp;deg; one side polished</td></tr><tr><td>100 nm SiO&lt;sub&gt;2&lt;/sub&gt;/Si</td><td></td><td></td><td>Fabricated in NDL</td></tr><tr><td>Ammonia Solution</td><td>BASF</td><td>Ammonia Solution 28% Selectipur</td><td></td></tr><tr><td>Molybdenum (Mo), 99.95%</td><td>Summit-Tech</td><td>N/A</td><td></td></tr><tr><td>Tungsten (W), 99.95%</td><td>Summit-Tech</td><td>N/A</td><td></td></tr><tr><td>Sulfur (S), 99.5%</td><td>Sigma-Aldrich</td><td>13803</td><td></td></tr><tr><td>Polymethyl Methacrylate (PMMA)</td><td>Microchem</td><td>8110788</td><td>Use for transfer process</td></tr><tr><td>Spin Coater</td><td>Laurell</td><td>WS 400B 6NPP LITE</td><td></td></tr><tr><td>Acetone</td><td>BASF</td><td>Acetone EL Selectipur</td><td></td></tr><tr><td>Isopropanol (IPA)</td><td>BASF</td><td>2-Propanol UPS</td><td></td></tr><tr><td>Photo Resist for EBL</td><td>TOK</td><td>TDUR-P-015</td><td></td></tr><tr><td>Plasma Cleaner</td><td>Harrick Plasma</td><td>PDC-32G</td><td>Oxygen plasma</td></tr></tbody></table>

a standard and reliable method to fabricate two-dimensional nanoelectronics

ثنائي الأبعاد (2D) المواد قد اجتذبت اهتمام كبير نظراً للخصائص الفريدة والتطبيقات المحتملة. حيث يفر مقياس توليف مواد 2D لا يزال في مراحله الوليدة، لا يمكن الاعتماد العلماء تماما على تقنيات أشباه الموصلات التقليدية للبحوث ذات الصلة. العمليات الحساسة من تحديد المواد اللازمة لتعريف القطب تحتاج إلى التحكم بشكل جيد. في هذه المقالة، مطلوب بروتوكول تصنيع عالمي في صناعة الإلكترونيات النانومترية الحجم، مثل 2D أو شبه هيتيروجونكشن القطبين الترانزستورات (س-ثنائية)، والترانزستورات 2D عن طريق بوابة العودة وأظهرت. هذا البروتوكول يتضمن تحديد الموقف المادي، والطباعة الحجرية شعاع الإلكترون (أبل)، وتعريف القطب المعدني، وآخرون. وترد أيضا سرد خطوة بخطوة إجراءات تصنيع هذه الأجهزة. وعلاوة على ذلك، تظهر النتائج أن كل من أجهزة ملفقة حققت عالية الأداء مع التكرار عالية. هذا العمل يكشف عن وصف شامل لعملية تدفق إعداد 2D نانو-إلكترونيات، تمكن مجموعات بحثية للوصول إلى هذه المعلومات، وتمهيد الطريق نحو المستقبل للإلكترونيات.

قد طبقت في عمليات تصنيع الجهاز على العديد من الأبحاث صاحب المقابلة التي تنطوي على تطوير أجهزة المواد ثنائية الأبعاد. في هذا الجزء، يتم عرض نتائج بعض هذه الأبحاث لإثبات الفعالية البروتوكول نوقشت أعلاه. أحادي الطبقة الجانبية WSe2-موس2 فثنائيه20 محددا...

Watch this Scientific Journal Video about A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics at JoVE.com

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

المقالة تهدف إلى إدخال إجراءات تصنيع القياسية وموثوق بها لتنمية المستقبل النانو الأبعاد منخفضة.

طريقة قياسية وموثوقة لاختلاق النانو ثنائي الأبعاد

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D ...

a-standard-reliable-method-to-fabricate-two-dimensional

Research

JoVE Journal

Engineering

9.5K Views.  National Taiwan Normal University. المقالة تهدف إلى إدخال إجراءات تصنيع القياسية وموثوق بها لتنمية المستقبل النانو الأبعاد منخفضة.

Video: A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Fabricating Nanogaps by Nanoskiving

There are several methods of fabricating nanogaps with controlled spacings, but the precise control over the sub-nanometer spacing between two electrodes-and generating them in practical quantities-is still challenging. The preparation of nanogap electrodes using nanoskiving, which is a form of edge lithography, is a fast, simple and powerful technique. This method is an entirely mechanical process which does not include any photo- or electron-beam lithographic steps and does not require any special equipment or infrastructure such as clean rooms. Nanoskiving is used to fabricate electrically addressable nanogaps with control over all three dimensions; the smallest dimension of these structures is defined by the thickness of the sacrificial layer (Al or Ag) or self-assembled monolayers. These wires can be manually positioned by transporting them on drops of water and are directly electrically-addressable; no further lithography is required to connect them to an electrometer.

The fabrication of electrically addressable, high-aspect-ratio (> 1000:1) metal nanowires separated by gaps of single nanometers using either sacrificial layers of aluminum and silver or self-assembled monolayers as templates is described. These nanogap structures are fabricated without a clean room or any photo- or electron-beam lithographic processes by a form of edge lithography known as nanoskiving.

افتعال Nanogaps بواسطة Nanoskiving

There are several methods of fabricating nanogaps with controlled spacings, but the precise control over the sub-nanometer spacing between two ...

Chemistry

A Method to Fabricate Disconnected Silver Nanostructures in 3D

The standard nanofabrication toolkit includes techniques primarily aimed at creating 2D patterns in dielectric media. Creating metal patterns on a submicron scale requires a combination of nanofabrication tools and several material processing steps. For example, steps to create planar metal structures using ultraviolet photolithography and electron-beam lithography can include sample exposure, sample development, metal deposition, and metal liftoff. To create 3D metal structures, the sequence is repeated multiple times. The complexity and difficulty of stacking and aligning multiple layers limits practical implementations of 3D metal structuring using standard nanofabrication tools. Femtosecond-laser direct-writing has emerged as a pre-eminent technique for 3D nanofabrication.1,2 Femtosecond lasers are frequently used to create 3D patterns in polymers and glasses.3-7 However, 3D metal direct-writing remains a challenge. Here, we describe a method to fabricate silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm. The method enables the fabrication of patterns not feasible using other techniques, such as 3D arrays of disconnected silver voxels.8 Disconnected 3D metal patterns are useful for metamaterials where unit cells are not in contact with each other,9 such as coupled metal dot10,11or coupled metal rod12,13 resonators. Potential applications include negative index metamaterials, invisibility cloaks, and perfect lenses.
In femtosecond-laser direct-writing, the laser wavelength is chosen such that photons are not linearly absorbed in the target medium. When the laser pulse duration is compressed to the femtosecond time scale and the radiation is tightly focused inside the target, the extremely high intensity induces nonlinear absorption. Multiple photons are absorbed simultaneously to cause electronic transitions that lead to material modification within the focused region. Using this approach, one can form structures in the bulk of a material rather than on its surface.
Most work on 3D direct metal writing has focused on creating self-supported metal structures.14-16 The method described here yields sub-micrometer silver structures that do not need to be self-supported because they are embedded inside a matrix. A doped polymer matrix is prepared using a mixture of silver nitrate (AgNO3), polyvinylpyrrolidone (PVP) and water (H2O). Samples are then patterned by irradiation with an 11-MHz femtosecond laser producing 50-fs pulses. During irradiation, photoreduction of silver ions is induced through nonlinear absorption, creating an aggregate of silver nanoparticles in the focal region. Using this approach we create silver patterns embedded in a doped PVP matrix. Adding 3D translation of the sample extends the patterning to three dimensions.

Femtosecond-laser direct-writing is frequently used to create three-dimensional (3D) patterns in polymers and glasses. However, patterning metals in 3D remains a challenge. We describe a method for fabricating silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm.

A طريقة لصنع النانو سيلفر قطع في 3D

The standard nanofabrication toolkit includes  techniques primarily aimed at creating 2D patterns in dielectric media. Creating  metal patterns on a ...

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

A quantum computer is a computer composed of quantum bits (qubits) that takes advantage of quantum effects, such as superposition of states and entanglement, to solve certain problems exponentially faster than with the best known algorithms on a classical computer. Gate-defined lateral quantum dots on GaAs/AlGaAs are one of many avenues explored for the implementation of a qubit. When properly fabricated, such a device is able to trap a small number of electrons in a certain region of space. The spin states of these electrons can then be used to implement the logical 0 and 1 of the quantum bit. Given the nanometer scale of these quantum dots, cleanroom facilities offering specialized equipment- such as scanning electron microscopes and e-beam evaporators- are required for their fabrication. Great care must be taken throughout the fabrication process to maintain cleanliness of the sample surface and to avoid damaging the fragile gates of the structure. This paper presents the detailed fabrication protocol of gate-defined lateral quantum dots from the wafer to a working device. Characterization methods and representative results are also briefly discussed. Although this paper concentrates on double quantum dots, the fabrication process remains the same for single or triple dots or even arrays of quantum dots. Moreover, the protocol can be adapted to fabricate lateral quantum dots on other substrates, such as Si/SiGe.

This paper presents a detailed fabrication protocol for gate-defined semiconductor lateral quantum dots on gallium arsenide heterostructures. These nanoscale devices are used to trap few electrons for use as quantum bits in quantum information processing or for other mesoscopic experiments such as coherent conductance measurements.

النانوية من بوابة المعرفة الغاليوم / AlGaAs الجانبي نقاط الكم

A quantum computer is a computer composed of quantum bits (qubits) that takes advantage of quantum effects, such as superposition of states and ...

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

In recent years &pi;-conjugated organic semiconductors have emerged as the active material in a number of diverse applications including large-area, low-cost displays, photovoltaics, printable and flexible electronics and organic spin valves. Organics allow (a) low-cost, low-temperature processing and (b) molecular-level design of electronic, optical and spin transport characteristics. Such features are not readily available for mainstream inorganic semiconductors, which have enabled organics to carve a niche in the silicon-dominated electronics market. The first generation of organic-based devices has focused on thin film geometries, grown by physical vapor deposition or solution processing. However, it has been realized that organic nanostructures can be used to enhance performance of above-mentioned applications and significant effort has been invested in exploring methods for organic nanostructure fabrication.	
A particularly interesting class of organic nanostructures is the one in which vertically oriented organic nanowires, nanorods or nanotubes are organized in a well-regimented, high-density array. Such structures are highly versatile and are ideal morphological architectures for various applications such as chemical sensors, split-dipole nanoantennas, photovoltaic devices with radially heterostructured "core-shell" nanowires, and memory devices with a cross-point geometry. Such architecture is generally realized by a template-directed approach. In the past this method has been used to grow metal and inorganic semiconductor nanowire arrays. More recently &pi;-conjugated polymer nanowires have been grown within nanoporous templates. However, these approaches have had limited success in growing nanowires of technologically important &pi;-conjugated small molecular weight organics, such as tris-8-hydroxyquinoline aluminum (Alq3), rubrene and methanofullerenes, which are commonly used in diverse areas including organic displays, photovoltaics, thin film transistors and spintronics.	
Recently we have been able to address the above-mentioned issue by employing a novel "centrifugation-assisted" approach. This method therefore broadens the spectrum of organic materials that can be patterned in a vertically ordered nanowire array. Due to the technological importance of Alq3, rubrene and methanofullerenes, our method can be used to explore how the nanostructuring of these materials affects the performance of aforementioned organic devices. The purpose of this article is to describe the technical details of the above-mentioned protocol, demonstrate how this process can be extended to grow small-molecular organic nanowires on arbitrary substrates and finally, to discuss the critical steps, limitations, possible modifications, trouble-shooting and future applications.

We report a simple method for fabricating an ultrahigh density array of vertically ordered small-molecular organic nanowires. This method allows for synthesis of complex heterostructured hybrid nanowire geometries, which can be inexpensively grown on arbitrary substrates. These structures have potential applications in organic electronics, optoelectronics, chemical sensing, photovoltaics and spintronics.

فوق العالي الكثافة صفيف من الانحياز عموديا الأسلاك المتناهية الصغر العضوية الصغيرة الجزيئية على ركائز التعسفي

In  recent years &pi;-conjugated  organic semiconductors have emerged as the active material in a number of  diverse applications including large-area, ...

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

السيليكون المعدنية أكسيد أشباه الموصلات الكم النقاط لالضخ وحيد الإلكترون

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Atomically Traceable Nanostructure Fabrication

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the entire fabrication process being used in order to maintain exquisite control over both feature size and feature density. Here, we demonstrate a method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology, opening up a pathway for top-down atomic control over nanofabrication. Hydrogen depassivation lithography is the first step of the nanoscale fabrication process followed by selective atomic layer deposition of up to 2.8 nm of titania to make a nanoscale etch mask. Contrast with the background is shown, indicating different mechanisms for growth on the desired patterns and on the H passivated background. The patterns are then transferred into the bulk using reactive ion etching to form 20 nm tall nanostructures with linewidths down to ~6 nm. To illustrate the limitations of this process, arrays of holes and lines are fabricated. The various nanofabrication process steps are performed at disparate locations, so process integration is discussed. Related issues are discussed including using fiducial marks for finding nanostructures on a macroscopic sample and protecting the chemically reactive patterned Si(100)-H surface against degradation due to atmospheric exposure.

We report a protocol for combining the atomic metrology of the Scanning Tunneling Microscope for surface patterning with selective Atomic Layer Deposition and Reactive Ion Etching. Using a robust process involving numerous atmospheric exposures and transport, 3D nanostructures with atomic metrology are fabricated.

يمكن عزوها بالذرة البنية النانوية تلفيق

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the entire fabrication process ...

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

We demonstrate a method for the low temperature growth (350 &#176;C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive thin-films. Due to the low growth temperature, the process allows integration with modern low-&#954; dielectrics and some flexible substrates. The process is compatible with standard semiconductor fabrication, and a method for the fabrication of electrical 4-point probe test structures for vertical interconnect test structures is presented. Using scanning electron microscopy the morphology of the CNT bundles is investigated, which demonstrates vertical alignment of the CNT and can be used to tune the CNT growth time. With Raman spectroscopy the crystallinity of the CNT is investigated. It was found that the CNT have many defects, due to the low growth temperature. The electrical current-voltage measurements of the test vertical interconnects displays a linear response, indicating good ohmic contact was achieved between the CNT bundle and the top and bottom metal electrodes. The obtained resistivities of the CNT bundle are among the average values in the literature, while a record-low CNT growth temperature was used.

A method for the growth of low temperature vertically-aligned carbon nanotubes, and the subsequent fabrication of vertical interconnect electrical test structures using semiconductor fabrication is presented.

تلفيق درجة الحرارة منخفضة الكربون الأنابيب الجزيئية عمودي روابط متوافق مع تكنولوجيا أشباه الموصلات

We demonstrate a method for the low temperature growth (350 &#176;C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive ...

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

The unique electronic properties and high surface-to-volume ratios of single-walled carbon nanotubes (SWNT) and semiconductor nanowires (NW) 1-4 make them good candidates for high sensitivity biosensors. When a charged molecule binds to such a sensor surface, it alters the carrier density5 in the sensor, resulting in changes in its DC conductance. However, in an ionic solution a charged surface also attracts counter-ions from the solution, forming an electrical double layer (EDL). This EDL effectively screens off the charge, and in physiologically relevant conditions ~100 millimolar (mM), the characteristic charge screening length (Debye length) is less than a nanometer (nm). Thus, in high ionic strength solutions, charge based (DC) detection is fundamentally impeded6-8.
We overcome charge screening effects by detecting molecular dipoles rather than charges at high frequency, by operating carbon nanotube field effect transistors as high frequency mixers9-11. At high frequencies, the AC drive force can no longer overcome the solution drag and the ions in solution do not have sufficient time to form the EDL. Further, frequency mixing technique allows us to operate at frequencies high enough to overcome ionic screening, and yet detect the sensing signals at lower frequencies11-12. Also, the high transconductance of SWNT transistors provides an internal gain for the sensing signal, which obviates the need for external signal amplifier.
Here, we describe the protocol to (a) fabricate SWNT transistors, (b) functionalize biomolecules to the nanotube13, (c) design and stamp a poly-dimethylsiloxane (PDMS) micro-fluidic chamber14 onto the device, and (d) carry out high frequency sensing in different ionic strength solutions11.

We describe the device fabrication and measurement protocol for carbon nanotube based high frequency biosensors. The high frequency sensing technique mitigates the fundamental ionic (Debye) screening effect and allows nanotube biosensor to be operated in high ionic strength solutions where conventional electronic biosensors fail. Our technology provides a unique platform for point-of-care (POC) electronic biosensors operating in physiologically relevant conditions.

تصنيع الكربون الأنابيب الجزيئية عالي التردد الكترونيات النانو جهاز الاستشعار البيولوجي للاستشعار عالية في حلول القوة الأيونية

The unique electronic properties and high surface-to-volume ratios of single-walled carbon nanotubes (SWNT) and semiconductor nanowires (NW) 1-4 make them ...

Bioengineering

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of nanowires. DEP is used for nanowire analysis, characterization, and for solution-based fabrication of semiconducting devices. The method works by applying an alternating electric field between metallic electrodes. The nanowire formulation is then dropped onto the electrodes which are on an inclined surface to create a flow of the formulation using gravity. The nanowires then align along the gradient of the electric field and in the direction of the liquid flow. The frequency of the field can be adjusted to select nanowires with superior conductivity and lower trap density. 
In this work, flow-assisted DEP is used to create nanowire field effect transistors. Flow-assisted DEP has several advantages: it allows selection of nanowire electrical properties; control of nanowire length; placement of nanowires in specific areas; control of orientation of nanowires; and control of nanowire density in the device. 
The technique can be expanded to many other applications such as gas sensors and microwave switches. The technique is efficient, quick, reproducible, and it uses a minimal amount of dilute solution making it ideal for the testing of novel nanomaterials. Wafer scale assembly of nanowire devices can also be achieved using this technique, allowing large numbers of samples for testing and large-area electronic applications.

In this paper, flow assisted dielectrophoresis is demonstrated for the self-assembly of nanowire devices. The fabrication of a silicon nanowire field effect transistor is shown as an example.

ديليكتروفوريسيس ساعد تدفق: طريقة منخفضة تكلفة لتصنيع الأجهزة عالية الأداء الحل مفهرسة أسلاك متناهية الصغر

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of ...

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape method or individual WS2 nanotubes by dispersing the suspension of WS2 nanotubes. The selected samples have been fabricated into devices by the use of the electron beam lithography and electrolyte is put on the devices. We have characterized the electronic properties of the devices under applying the gate voltage. In the small gate voltage region, ions in the electrolyte are accumulated on the surface of the samples which leads to the large electric potential drop and resultant electrostatic carrier doping at the interface. Ambipolar transfer curve has been observed in this electrostatic doping region. When the gate voltage is further increased, we met another drastic increase of source-drain current which implies that ions are intercalated into layers of WS2 and electrochemical carrier doping is realized. In such electrochemical doping region, superconductivity has been observed. The focused technique provides a powerful strategy for achieving the electric-filed-induced quantum phase transition.

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Here, we present a protocol to control the carrier number in solids by using the electrolyte.

المجال الكهربائي لسيطرة الدول الإلكترونية في نانوديفيسيس2 WS بالكهرباء النابضة

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape ...