This work was carried out in the framework of the project &#8220;MIRAGE,&#8221; funded by the European Commission within the FP7 program.

1. LIFT辅助倒装芯片粘接注意：有参与实现升降辅助倒装芯片组件中，即微凸点利用提技术的基板，使用热压倒装芯片接合方法将所述光电芯片的凸点基板三个阶段，并最后封装保税组件。每一个阶段将在以下部分中讨论： <ol><li>使用LIFT微碰撞： <ol><li>为供体的制备，沉积的施主材料的薄膜上的激光透明载体衬底。对于本实验，蒸发铟金属的200nm厚的薄膜上的尺寸为玻璃载体基片顶部：直径为2英寸×0.05厘米厚度。 注：供体的制备方法依赖于供体材料的相， 例如，可以使用蒸发和溅射用于固相施主材料和旋涂和刮涂用于液相施主秒。 </li><li>对于接收机制备，使用的玻璃基板为5×5×0.07厘米3作为接收机的尺寸。图案这些基板与金属接触垫用于粘结在OE芯片和扇出探测使用光刻结构。对于本实验，图案4微米厚的镍金结合垫和扇出探测轨道到玻璃基板接收机。 </li><li>接下来，将与接收器的接触捐赠并安装捐助接收器组装到一个计算机控制XY翻译阶段。 注意：根据供体材料（ 例如，固体（铟）或液体（墨/膏））和它的厚度，供体和接收器衬底的相位被设置在可容易地控制（ 例如，通过一个最佳分离使用金​​属垫片）。 </li><li>聚焦入射激光束在所述载体给予体界面采用160毫米焦距的物镜和扫描横跨施主substrat梁（20微米光斑尺寸）Ë传输捐助微颠簸到接收器焊点。使用的355纳米波长和12微秒的脉冲持续时间的皮秒激光源解除铟凸点到接收机焊点在270毫焦耳/ cm 2的注量。 注：激光性能如能量，没有。脉冲，物镜的高度，坐标印刷施主微凸点接收基板和待转移准确通过计算机程序来控制所希望的图形上的精确位置的。关键实验参数（ 例如，传输的注量）需要的情况下使用其他激光源进行优化。 </li><li>对于较厚的颠簸将捐赠到一个新的区域，并重复步骤1.1.4几次。例如，重复步骤1.1.4六次以获得一摞印​​刷在彼此的顶部上对这个实验6铟凸点。最后解除凸块具有〜1.5微米的平均高度和直径为20微米（ 图2）。 注：对于这些experim需求测试凸点的表面轮廓和厚度，使用光学轮廓仪进行测定。据检查，该凸块具有一个凸/圆顶的形态为1.5微米的平均厚度，平均凸起直径（如标记为黄色的图3）。这样做的原因是由于这样的事实，所述施主熔化在激光照射区域和转移沉淀后再固化在到达接收器的表面（氧化铟具有低的熔点）。这样做的好处是，它会导致在印刷凸点给VCSEL接触垫的良好的附着力。 </li></ol></li><li>芯片到基片热压粘合（ 图4-6）： <ol><li>使用半自动倒装芯片键合机用于粘结光电芯片到碰着衬底。 </li><li>加载撞到接收机和芯片被粘合到粘结剂各自的真空板。将芯片在翻转位置， 即，其活动区域FAC荷兰国际集团下跌。 </li><li>使用一个合适的拾取工具和对准它在芯片的中心。使用的针形工具， 如图5接下来，挑使用该拾取工具的芯片。 </li><li>对齐的芯片键合焊盘与使用照相机对准系统接收基板上的相应接触垫。 </li><li>一旦对准位置在基板上的芯片上。 </li><li>施加热（〜200℃）和压力（12.5克力/凸点）同时实现芯片到衬底的电气和机械互连。 </li></ol></li><li>封装保税组件（ 图4-6）的： <ol><li>分配围绕接合组件的使用注射器针的边缘的光学透明粘合剂。封装增加了粘合组件的机械可靠性。使用单组分型紫外线硬化粘合剂，如NOA 86，用于封装所述接合的芯片。 </li><li>固化用UV灯为〜30秒的粘合剂。 </li></ol></li></ol>保税垂直腔面发射激光器的2表征（VCSEL的） 注：制造后的下一个步骤是评价粘合组件的电光性能。器件的光 - 电流 - 电压（LIV）的曲线被记录使用探针台后的粘接。涉及的测试步骤如下： <ol><li>放置倒装接合装置上定制的透明阶段。舞台上有钻孔的中心，方便访问由VCSEL器件发出的光孔。 </li><li>放置一个光检测器（PD）的下方的透明阶段，并与使用显微镜的接合芯片调整其活性区域。 </li><li>精确定位的镍金的探测针用显微镜探测垫。 </li><li>注入高达10mA的电流，并测量整个VCSEL的电压降并使用一个电流/电压源米单元通过它发射的光和功率计水库pectively。 </li></ol>

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The authors have nothing to disclose.

在本文中，我们已经证明了使用称为LIFT激光的直接写入技术单个VCSEL芯片热压倒装接合。所涉及的微凸点铟的印刷到利用提技术在基片接触焊点的组件的制造步骤。其次的VCSEL芯片热压倒装接合到撞底物和最终的封装。 电梯辅助接合芯片的电学，光学和机械可靠性是通过测量它们的LIV曲线和执行标准8585老化试验来评价。光学特性，机械稳定性所获得的成功，和耐用性明显突?...

激光诱导的正向转移（LIFT）是用于单步模式定义及与微米和亚微米分辨率材料转移一个多功能直写添加剂的制造方法。在本文中，我们报告一个芯片级利用LIFT作为凸点技术的垂直腔表面发射激光器（VCSEL）倒装芯片封装。倒装芯片在系统封装和集成的电子和光电（OE）组件的关键技术。为了实现致密的集成组件的精细间距焊接是必不可少的。虽然细间距粘接已经证明通过一些标准技术，但有在组合在一起的其他重要特性，如柔软性，成本效益，速度，精度和低加工温度方面的空隙。为了满足这些要求，我们证明LIFT辅助热压粘合方法，OE组件的精细间距焊接。 以LIFT，要被打印的材料（称为供体 ）的薄膜沉积到一个表面上的激光的透明支撑基板（简称为载体 ）的， 图1示出了这种技术的基本原理。足够的强度的入射激光脉冲然后聚焦在载波施主接口，提供转发来自照射区中的供体像素转移到另一衬底上所需地放于靠近所述推进力（称为接收器 ）。 LIFT最早在1986报道Bohandy作为一种技术来打印微米大小的铜线用于修复受损的光掩模3。因为它的第一示范这一技术已获得显著兴趣作为微纳米制造技术的受控图案化和打印的各种材料，如陶瓷4，碳纳米管5，量子点6，活细胞7，图烯8，对于不同的应用，例如生物传感器9中，有机发光二极管10，光电元件11，电浆传感器12，有机电子器件13和倒装芯片键合14,15。 升降机相比具有若干优点，例如简单性，速度，灵活性，成本效益，高分辨率和准确性的OE组件的倒装芯片封装的现有倒装芯片凸点和粘结技术。

<table border="0" cellpadding="0" cellspacing="0" width="663">
	<tbody>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Name of Material/ Equipment</td>
			<td style="width:161px;">Company</td>
			<td style="width:119px;">Catalog Number</td>
			<td style="width:167px;">Comments/Description</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Laser source</td>
			<td style="width:161px;">3D MicroMac (3DMM)</td>
			<td style="width:119px;">2912-295</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Photodetector</td>
			<td style="width:161px;">Newport&#160;</td>
			<td style="width:119px;">818 series</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Source measurement unit</td>
			<td style="width:161px;">Keithley&#160;</td>
			<td style="width:119px;">2401</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Power meter</td>
			<td style="width:161px;">Newport&#160;</td>
			<td style="width:119px;">1930</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Underfill</td>
			<td style="width:161px;">Norlands</td>
			<td style="width:119px;">NOA 86</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">UV lamp</td>
			<td style="width:161px;">Omnicure</td>
			<td style="width:119px;">Series 1000 UV</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Probe station</td>
			<td style="width:161px;">Cascade Microtech</td>
			<td style="width:119px;">model 42</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Flip-chip bonder</td>
			<td style="width:161px;">Dr. Tresky</td>
			<td style="width:119px;">T-320 X</td>
			<td></td>
		</tr>
	</tbody>
</table>

laser-induced forward transfer for flip-chip packaging of single dies

倒装芯片（FC）封装是一个关键的技术用于实现在微电子工业的高性能，超小型化和高密度电路。在该技术中，芯片和/或所述衬底撞着和两个通过这些导电性凸点接合。许多凸点技术已被开发，并自1960年1诸如模版印刷，螺柱凸点，蒸发和电解/电镀2引入FC技术的深入研究。尽管进展，这些方法都取得了它们都从一个遭受或需要解决诸如成本，复杂的处理步骤，加工温度高，制造时间，最重要的是，缺乏灵活性多个缺点。在本文中，我们展示了被称为激光诱导转发转移（LIFT）的简单和具有成本效益的基于激光的凸点形成技术3。使用LIFT技术广泛凹凸材料可以BË打印在单步具有很大的灵活性，高的速度和准确性在RT。另外，升降机使凸起和接合向下芯片级，它是用于制造超微型电路是至关重要的。

图7示出了从许多倒装接合的VCSEL芯片之一被记录，一个典型的LIV曲线。测量光功率给供应商之间的良好匹配引用值所指示的绑定设备后粘接的成功运作。该曲线也被记录优先和后封装和比较后可知，得到密封剂已经没有对芯片的功能影响（ 见图7）。另外，记录的倒装接合的VCSEL和那些从裸片记录的IV曲线之间的比较产生了很好的匹配，从而，这表明由于发生向解除凸块?...

Watch this Scientific Journal Video about Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies at JoVE.com

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

我们演示了如何使用激光诱导转发转移（LIFT）技术光电元器件的倒装芯片组装的。这种方法提供了一种简单，经济有效的，低的温度下，细间距凸点和粘结片上大规模用于光电应用实现高密度电路快速且灵活的解决方案。

激光诱导转发转移单人死于倒装芯片封装

Flip-chip (FC) packaging is a key technology for realizing high performance, ultra-miniaturized and high-density circuits in the micro-electronics ...

laser-induced-forward-transfer-for-flip-chip-packaging-of-single-dies

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JoVE Journal

Engineering

12.2K 次观看.  Ghent University-imec. 我们演示了如何使用激光诱导转发转移（LIFT）技术光电元器件的倒装芯片组装的。这种方法提供了一种简单，经济有效的，低的温度下，细间距凸点和粘结片上大规模用于光电应用实现高密度电路快速且灵活的解决方案。 

视频: Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

Compact Quantum Dots for Single-molecule Imaging

Single-molecule imaging is an important tool for understanding the mechanisms of biomolecular function and for visualizing the spatial and temporal heterogeneity of molecular behaviors that underlie cellular biology 1-4. To image an individual molecule of interest, it is typically conjugated to a fluorescent tag (dye, protein, bead, or quantum dot) and observed with epifluorescence or total internal reflection fluorescence (TIRF) microscopy. While dyes and fluorescent proteins have been the mainstay of fluorescence imaging for decades, their fluorescence is unstable under high photon fluxes necessary to observe individual molecules, yielding only a few seconds of observation before complete loss of signal. Latex beads and dye-labeled beads provide improved signal stability but at the expense of drastically larger hydrodynamic size, which can deleteriously alter the diffusion and behavior of the molecule under study.
Quantum dots (QDs) offer a balance between these two problematic regimes. These nanoparticles are composed of semiconductor materials and can be engineered with a hydrodynamically compact size with exceptional resistance to photodegradation 5. Thus in recent years QDs have been instrumental in enabling long-term observation of complex macromolecular behavior on the single molecule level. However these particles have still been found to exhibit impaired diffusion in crowded molecular environments such as the cellular cytoplasm and the neuronal synaptic cleft, where their sizes are still too large 4,6,7.
Recently we have engineered the cores and surface coatings of QDs for minimized hydrodynamic size, while balancing offsets to colloidal stability, photostability, brightness, and nonspecific binding that have hindered the utility of compact QDs in the past 8,9. The goal of this article is to demonstrate the synthesis, modification, and characterization of these optimized nanocrystals, composed of an alloyed HgxCd1-xSe core coated with an insulating CdyZn1-yS shell, further coated with a multidentate polymer ligand modified with short polyethylene glycol (PEG) chains (Figure 1). Compared with conventional CdSe nanocrystals, HgxCd1-xSe alloys offer greater quantum yields of fluorescence, fluorescence at red and near-infrared wavelengths for enhanced signal-to-noise in cells, and excitation at non-cytotoxic visible wavelengths. Multidentate polymer coatings bind to the nanocrystal surface in a closed and flat conformation to minimize hydrodynamic size, and PEG neutralizes the surface charge to minimize nonspecific binding to cells and biomolecules. The end result is a brightly fluorescent nanocrystal with emission between 550-800 nm and a total hydrodynamic size near 12 nm. This is in the same size range as many soluble globular proteins in cells, and substantially smaller than conventional PEGylated QDs (25-35 nm).

We describe the preparation of colloidal quantum dots with minimized hydrodynamic size for single-molecule fluorescence imaging. Compared to conventional quantum dots, these nanoparticles are similar in size to globular proteins and are optimized for single-molecule brightness, stability against photodegradation, and resistance to nonspecific binding to proteins and cells.

紧凑型量子点的单分子成像

Single-molecule imaging is an important tool for  understanding the mechanisms of biomolecular function and for visualizing the  spatial and temporal ...

科研

工程学

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit a strong degradation after annealing due to the occurrence of void formation at the contact/SiO2 interface. This void formation can cause cracking and delamination of the metal film, which can increase the resistance or lead to a complete failure of the NW device. In order to address issues associated with void formation, a technique was developed that removes Ni/Au contact metal films from the substrates to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN NW devices. This procedure determines the degree of adhesion of the contact films to the substrate and NWs and allows for the characterization of the morphology and composition of the contact interface with the substrate and nanowires. This technique is also useful for assessing the amount of residual contamination that remains from the NW suspension and from photolithographic processes on the NW-SiO2 surface prior to metal deposition. The detailed steps of this procedure are presented for the removal of annealed Ni/Au contacts to Mg-doped GaN NWs on a SiO2 substrate.

A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.

单氮化镓纳米线设备分析接触界面

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit  a strong degradation after annealing due to the  occurrence of void formation at the ...

Measurement and Analysis of Atomic Hydrogen and Diatomic Molecular AlO, C2, CN, and TiO Spectra Following Laser-induced Optical Breakdown

In this work, we present time-resolved measurements of atomic and diatomic spectra following laser-induced optical breakdown. A typical LIBS arrangement is used. Here we operate a Nd:YAG laser at a frequency of 10 Hz at the fundamental wavelength of 1,064 nm. The 14 nsec pulses with anenergy of 190 mJ/pulse are focused to a 50 &#181;m spot size to generate a plasma from optical breakdown or laser ablation in air. The microplasma is imaged onto the entrance slit of a 0.6 m spectrometer, and spectra are recorded using an 1,800 grooves/mm grating an intensified linear diode array and optical multichannel analyzer (OMA) or an ICCD. Of interest are Stark-broadened atomic lines of the hydrogen Balmer series to infer electron density. We also elaborate on temperature measurements from diatomic emission spectra of aluminum monoxide (AlO), carbon (C2), cyanogen (CN), and titanium monoxide (TiO).
The experimental procedures include wavelength and sensitivity calibrations. Analysis of the recorded molecular spectra is accomplished by the fitting of data with tabulated line strengths. Furthermore, Monte-Carlo type simulations are performed to estimate the error margins. Time-resolved measurements are essential for the transient plasma commonly encountered in LIBS.

Measurement and Analysis of Atomic Hydrogen and Diatomic Molecular AlO, C2, CN, and TiO Spectra Following Laser-induced Optical Breakdown

Time-resolved atomic and diatomic molecular species are measured using LIBS. The spectra are collected at various time delays following the generation of optical breakdown plasma with Nd:YAG laser radiation&#160;and are analyzed to infer electron density and temperature.

测量和原子氢和双原子分子ALO，C分析<sub&gt; 2</sub&gt;，CN和二氧化钛光谱承接激光诱导光学击穿

In this work, we present time-resolved measurements of atomic and diatomic spectra following laser-induced optical breakdown. A typical LIBS arrangement ...

Laser-induced Breakdown Spectroscopy: A New Approach for Nanoparticle's Mapping and Quantification in Organ Tissue

Emission spectroscopy of laser-induced plasma was applied to elemental analysis of biological samples. Laser-induced breakdown spectroscopy (LIBS) performed on thin sections of rodent tissues: kidneys and tumor, allows the detection of inorganic elements such as (i) Na, Ca, Cu, Mg, P, and Fe, naturally present in the body and (ii) Si and Gd, detected after the injection of gadolinium-based nanoparticles. The animals were euthanized 1&#160;to 24 hr&#160;after intravenous injection of particles. A two-dimensional scan of the sample, performed using a motorized micrometric 3D-stage, allowed the infrared laser beam exploring the surface with a lateral resolution less than 100 &#956;m. Quantitative chemical images of Gd element inside the organ were obtained with sub-mM sensitivity. LIBS offers a simple and robust method to study the distribution of inorganic materials without any specific labeling. Moreover, the compatibility of the setup with standard optical microscopy emphasizes its potential to provide multiple images of the same biological tissue with different types of response:&#160;elemental, molecular, or cellular.

Laser-induced Breakdown Spectroscopy: A New Approach for Nanoparticle&#039;s Mapping and Quantification in Organ Tissue

Laser-induced breakdown spectroscopy performed on thin organ and tumor tissue successfully detected natural elements and artificially injected gadolinium (Gd), issued from Gd-based nanoparticles. Images of chemical elements reached a resolution of 100 &#956;m and quantitative sub-mM sensitivity. The compatibility of the setup with standard optical microscopy emphasizes its potential to provide multiple images of a same biological tissue.

激光诱导击穿光谱：对于纳米粒子的映射和定量的器官组织的新方法

Emission spectroscopy of laser-induced plasma was applied to elemental analysis of biological samples. Laser-induced breakdown spectroscopy (LIBS) ...

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

硅金属 - 氧化物 - 半导体量子点单电子泵

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly known as plasmonic effects, play an important role. Research in this field has, however, been impeded owing to the difficulty of fabricating devices containing the desired functional metal nanostructures. In order to provide a viable strategy to this issue, we herein show a transfer printing-based approach that allows the quick and low-cost integration of designed metal nanostructures with a variety of device architectures, including solar cells. Nanopillar poly(dimethylsiloxane) (PDMS) stamps were fabricated from a commercially available nanohole plastic film as a master mold. On this nanopatterned PDMS stamps, Ag films were deposited, which were then transfer-printed onto block copolymer (binding layer)-coated hydrogenated microcrystalline Si (&#181;c-Si:H) surface to afford ordered Ag nanodisk structures. It was confirmed that the resulting Ag nanodisk-incorporated &#181;c-Si:H solar cells show higher performances compared to a cell without the transfer-printed Ag nanodisks, thanks to plasmonic light trapping effect derived from the Ag nanodisks. Because of the simplicity and versatility, further device application would also be feasible thorough this approach.

A viable transfer printing-based methodology to introduce plasmonic metal nanostructures in solar cells is described. Using nanopillar poly(dimethylsiloxane) stamps, an Ag-based ordered nanodisk array was integrated with standard hydrogenated microcrystalline Si solar cells, which led to improved device performances due to plasmonic light trapping.

灯光诱杀银纳米结构通过转移印花在氢化微晶硅太阳能电池集成

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly ...

Laser-induced Forward Transfer of Ag Nanopaste

Over the past decade, there has been much development of non-lithographic methods1-3 for printing metallic inks or other functional materials. Many of these processes such as inkjet3 and laser-induced forward transfer (LIFT)4 have become increasingly popular as interest in printable electronics and maskless patterning has grown. These additive manufacturing processes are inexpensive, environmentally friendly, and well suited for rapid prototyping, when compared to more traditional semiconductor processing techniques. While most direct-write processes are confined to two-dimensional structures and cannot handle materials with high viscosity (particularly inkjet), LIFT can transcend both constraints if performed properly. Congruent transfer of three dimensional pixels (called voxels), also referred to as laser decal transfer (LDT)5-9, has recently been demonstrated with the LIFT technique using highly viscous Ag nanopastes to fabricate freestanding interconnects, complex voxel shapes, and high-aspect-ratio structures. In this paper, we demonstrate a simple yet versatile process for fabricating a variety of micro- and macroscale Ag structures. Structures include simple shapes for patterning electrical contacts, bridging and cantilever structures, high-aspect-ratio structures, and single-shot, large area transfers using a commercial digital micromirror device (DMD) chip.

We demonstrate the use of the Laser-induced forward transfer technique (LIFT) for the printing of high-viscosity Ag paste. This technique offers a simple, low temperature, robust process for non-lithographically printing microscale 2D and 3D structures.

银纳米糊膏的激光诱导正向传输

Over the past decade, there has been much development of non-lithographic methods1-3 for printing metallic inks or other functional materials. Many of ...

Fabrication of 1-D Photonic Crystal Cavity on a Nanofiber Using Femtosecond Laser-induced Ablation

We present a protocol for fabricating 1-D Photonic Crystal (PhC) cavities on subwavelength-diameter tapered optical fibers, optical nanofibers, using femtosecond laser-induced ablation. We show that thousands of periodic nano-craters are fabricated on an optical nanofiber by irradiating with just a single femtosecond laser pulse. For a typical sample, periodic nano-craters with a period of 350 nm and with diameter gradually varying from 50 - 250 nm over a length of 1 mm are fabricated on a nanofiber with diameter around 450 - 550 nm. A key aspect of such a nanofabrication is that the nanofiber itself acts as a cylindrical lens and focuses the femtosecond laser beam on its shadow surface. Moreover, the single-shot fabrication makes it immune to mechanical instabilities and other fabrication imperfections. Such periodic nano-craters on nanofiber, act as a 1-D PhC and enable strong and broadband reflection while maintaining the high transmission out of the stopband. We also present a method to control the profile of the nano-crater array to fabricate apodized and defect-induced PhC cavities on the nanofiber. The strong confinement of the field, both transverse and longitudinal, in the nanofiber-based PhC cavities and the efficient integration to the fiber networks, may open new possibilities for nanophotonic applications and quantum information science.

We present a protocol for fabricating 1-D photonic crystal cavities on subwavelength diameter silica fibers (optical nanofibers) using femtosecond laser-induced ablation.

1-D光子晶体空穴对纳米纤维使用飞秒激光诱导消融制造

We present a protocol for fabricating 1-D Photonic Crystal (PhC) cavities on subwavelength-diameter tapered optical fibers, optical nanofibers, using ...

Scanning Light Scattering Profiler (SLPS) Based Methodology to Quantitatively Evaluate Forward and Backward Light Scattering from Intraocular Lenses

The scanning light scattering profiler (SLSP) methodology has been developed for the full-angle quantitative evaluation of forward and backward light scattering from intraocular lenses (IOLs) using goniophotometer principles. This protocol describes the SLSP platform and how it employs a 360&#176; rotational photodetector sensor that is scanned around an IOL sample while recording the intensity and location of scattered light as it passes through the IOL medium. The SLSP platform can be used to predict, non-clinically, the propensity for current and novel IOL designs and materials to induce light scatter. Non-clinical evaluation of light scattering properties of IOLs can significantly reduce the number of patient complaints related to unwanted glare, glistening, optical defects, poor image quality, and other phenomena associated with the unintended light scattering. Future studies should be conducted to correlate SLSP data with clinical results to help identify which measured light scatter is most problematic for patients that have undergone cataract surgery subsequent to IOL implantation.

Scanning Light Scattering Profiler SLPS Based Methodology to Quantitatively Evaluate Forward and Backward Light Scattering from Intraocular Lenses

This protocol describes the scanning light scattering profiler (SLSP) that enables the full-angle quantitative evaluation of forward and backward scattering of light from intraocular lenses (IOLs) using goniophotometer principles.

基于扫描光散射分析器（SLPS）的方法来量化评估来自眼内镜的前向和后向光散射

The scanning light scattering profiler (SLSP) methodology has been developed for the full-angle quantitative evaluation of forward and backward light ...

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

The miniaturization of semiconductor devices to scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution, which motivates the use of scanning tunneling microscopy (STM). However, conventional STM is limited to millisecond temporal resolution. Several methods have been developed to overcome this shortcoming, including all-electronic time-resolved STM, which is used in this study to examine dopant dynamics in silicon with nanosecond resolution. The methods presented here are widely accessible and allow for local measurement of a wide variety of dynamics at the atomic scale. A novel time-resolved scanning tunneling spectroscopy technique is presented and used to efficiently search for dynamics.

We demonstrate an all-electronic method to observe nanosecond-resolved charge dynamics of dopant atoms in silicon with a scanning tunneling microscope.

全电子纳秒分辨扫描隧道显微镜: 促进单一掺杂剂电荷动力学的研究

The miniaturization of semiconductor devices to scales where small numbers of dopants can control device properties requires the development of new ...