This research was financially supported by Ministry of Science and Technology, Taiwan (104-2514-S-009 -001, 104-2627-M-009-001 and 102-2311-B-009-004-MY3). We thank the National Nano Device Laboratories (NDL) for its valuable assistance during device fabrication and analysis.

1.作製とpSNWFETデバイスの保全<ol><li> デバイス製造 注：pSNWFETは以前23,24を報告されたように、側壁スペーサ技術を用いて作製しました。 <ol><li>ゲート誘電体層を準備します。 <ol><li>膜厚100nmの熱酸化膜 ​​（SiO 2）（4時間980℃でO 2およびH 2処理ガス）湿式酸化プロセス25を用いて、Si基板上に層をキャップ。 </li><li> 4時間980℃で低圧化学蒸着（LPCVD）25を使用して、膜厚50nmの窒化シリコン（Si 3 N 4）層を堆積させます。 </li></ol></li><li> 4時間780℃でLPCVD 25を使用することにより膜厚100nmのテトラエチルオルトシリケート（TEOS）層を堆積させます。 </li><li>酸化ダミー構造を定義するために、I線ステッパを使用して、標準的なリソグラフィを行います。 <ol><li>コー​​ト830 nmの厚さのフォトレジスト層を有するウェハ表面。 </li><li>私I線ステッパーにパターン定義のフォトマスクをnsert。 </li><li>室温で1980 Jの強度で：I線ステッパー（波長365nm）を使用して露出を処理します。 </li><li> 5分間の現像液内のウェハを開発します。 </li><li>誘導1分間のHBrおよびClプラズマガスをプラズマエッチャー25結合標準を使用して、等方性エッチング処理を行います。 </li></ol></li><li> LPCVD 25を使用することにより、厚さ100nmのアモルファスシリコン（α-Si）層を堆積させます。 </li><li>多結晶構造の中にα-Siから変換するために24時間N 2雰囲気中で600℃でのアニール工程を行います。 </li><li>低エネルギーのソース/ドレイン（S / D）のドーピングを介してインプラントリンイオン（5E 15 cm -2で）25。 </li><li> poly-Si層を除去し、ポリシリコンナノワイヤー（pSNW）25を形成するために、I線ステッパを使用して、標準的なリソグラフィを行います。 注：DOPを移植するステップ1.1.3を繰り返し、アリポリSi除去とS / D領域以外の場所で自己整合的にサイドウォールのSiチャネルを形成します。 </li><li> 5時間25 780℃でのLPCVDを用いて不動態化プロセス（200nmの厚さのTEOS酸化膜 ​​）を行います。 </li><li>二段階のドライ/ウェットエッチングプロセスを用いて、ナノワイヤ・チャネル、およびフォームのテストパッドを露出させるために、I線ステッパを使用して、標準的なリソグラフィを行います。 <ol><li>手順を繰り返し1.1.3。 </li><li>ウェットエッチング処理を行う（DHF：HF / 1分間のH 2 O）。 </li></ol></li></ol></li><li> ウエハの保存 <ol><li>真空保管袋にウェハを密封し、電子ドライキャビネット（室温で相対湿度&lt;40％）に保管してください。 </li></ol></li></ol>デバイスの2.前処理<ol><li> デバイスの洗浄 <ol><li>純粋なアセトンでデバイスをすすぎます。 </li><li>超音波処理（46 kHzで、80 W）10分間、純粋なアセトン中のデバイス。 </li> &lt;LI&gt;超音波処理（46 kHzで、80 W）5分間純エタノール（99.5％）でデバイス。 </li><li>ブロードライ装置の表面を窒素で。 </li></ol></li><li> 酸素プラズマ <ol><li> 30秒18 WでO 2プラズマでデバイスを扱います。 </li></ol></li></ol>デバイス表面上のDNAプローブの3固定化<ol><li> アミン基の修飾 <ol><li> 30分間、2.0％（3-アミノプロピル）トリエトキシシラン（APTES）/エタノール溶液中に装置を浸します。 </li><li>エタノールで3回装置を洗浄し、その後、超音波処理（46 kHzで、80 W）10分間、エタノール中のデバイス。 </li><li> SNWsのアミン基を作成するために10分間、120℃のホットプレート上でデバイスを加熱します。 </li></ol></li><li> アルデヒド基修飾 <ol><li>表面にアルデヒド基を作成するために、室温で1時間、12.5％のグルタルアルデヒドでデバイスを浸します。光暴露を避けます。 </li><li>デバイスのウィットを洗いますその後、3回およびブロー乾燥装置の表面を窒素で、H 10 mMリン酸ナトリウム緩衝液（pH 7.0のNa-PB）。 </li></ol></li><li> DNAプローブを固定化 <ol><li>一晩、1μMDNAプローブを含有する溶液中にデバイスを浸します。 </li><li>未反応のアルデヒド基をブロックするために30分間、4.0ミリモルのNaBH 3 CNと10mMトリス緩衝液（pH8.0）でデバイスを浸します。 </li><li> Na-PB（pH7.0）で3回装置を洗浄し、その後ブロードライ装置の表面を窒素で。 </li></ol></li></ol> pSNWFET上の表面改質の4確認と分析<ol><li> 表面改質の各ステップ以下pHプロファイル <ol><li> pHが3.0から9.0での10mMのNa-PBを準備します。 <ol><li>脱イオン水（pHは11.60）で10 mMのリン酸ナトリウム三塩基十二（のNa 3 PO 4）を準備します。 </li><li>脱イオン水中の10 mMのリン酸（H 3 PO 4）を調製（pHは2.35）。 </li><li> 10mMののNa 3 PO 4緩衝液500ml中にpH電極を配置し、3.0、4.0、5.0のpH値でバッファを得るために、pH値を測定しながら、10mMのH 3 PO 4緩衝液の異なるボリュームでこの溶液を混合、6.0 、7.0、8.0、および9.0。 </li></ol></li><li> ACコンダクタンス測定 注：測定回路は、液体ゲート電極として役立っ小さなAC信号発生器とAuマイクロワイヤを含んでいました。 <ol><li>各改質工程での測定26のための最適な液体ゲート電圧（V LG）を決定し （2.2、3.1、3.2、および3.3ステップ）。 注：デバイスの電気的特性を、このセクションで説明するようにSNW上の4つの表面改質を測定した後。ステップ2.2において、自然酸化物層を含む未修飾pSNWFETが変更されます。 APTESのアミン基を有する装置を変更する3.1伴うステップ。ステップ3.2は非荷電での修飾を含み、グルタルアルデヒドの官能基;ステップ3.3は、DNAプローブの修飾を含みます。 <ol><li> SNWとの直接接触のための：10mMのNaをPB（pH7.0）に、シリンジポンプを使用して、SNW表面にソリューションを提供し（5.0ミリリットル/時間の流速）。 </li><li> 0.80から1.30 VにV LGを掃引しながら、デバイスのリアルタイムのコンダクタンスを測定します<ol><li>室温でロックイン技術27を使用することによりコンダクタンス測定を行います。 </li><li> AC電流信号は、低ノイズ電流プリアンプを使用することにより、交流電圧信号に変換します。 </li><li> 0.80から1.30 V（間隔= 0.02 V）にV LGを増やす時にコンダクタンス（G）上のデータを収集します。 </li></ol></li><li>装置26の最適なV LG（最も敏感なV LG）を決定します 。 <ol><li>曲線の方程式を得るために、ステップ4.1.2.1.2.3からGV LG曲線をプロットします。 </li><li> DIF式をferentiate、およびV LGの各点の値を計算します。 </li><li> Gでステップ4.1.2.1.3.2から値を割り、および最大数に応じた最適なV LGを決定します 。 </li></ol></li></ol></li><li>表面改質の各段階でのpHプロファイルをリアルタイムでコンダクタンスを測定します。 <ol><li>室温でロックイン技術27を使用することによりコンダクタンス測定を行います。 </li><li>低ノイズ電流のプリアンプを使用して、交流電圧信号に交流電流信号に変換します。 </li><li> V LG：表面改質（ステップ2.2の各ステップに最適なV LGを設定します。 = 1.02、ステップ3.1：V LG = 0.98、ステップ3.2：V LG = 0.98、およびステップ3.3：V LG = 1.0）。 </li><li> 5.0ミリリットル/時間：SNW表面に3.0から9.0へのpH値を有する10mMののNa-PB溶液（流量を配信）、0.01 Vのドレイン電圧でのコンダクタンスのデータを収集します</li></ol></li></ol></li></ol></li><li> 表面改質の各ステップ以下の10mMのNa-PB（pHは7.0）でのデバイスの電気的特性（I D -V BG曲線 ）の測定（2.2、3.1、3.2、および3.3を繰り返します。） 注：デバイスの電気的特性をSNW上の4つの表面改質を測定した後：ステップ2.2で、自然酸化物層を含む改変されていないpSNWFETが変更されました。ステップ3.1は、APTESのアミン基を持つデバイスを変更することです。ステップ3.2は、グルタルアルデヒドの非荷電官能基による修飾を伴います。ステップ3.3は、DNAプローブの修飾を伴います。 <ol><li> SNWとの直接接触のため：シリンジポンプを使用して（5.0ミリリットル/時流量）（2.2、3.1、3.2、および3.3ステップ）を10mMのNa-PB（pH7.0）でSNW表面へのソリューションを提供します。 </li><li> I Dを測定します </em&gt;デバイスの商用半導体アナライザおよびソフトウェアを使用して、（2.2、3.1、3.2、および3.3ステップ）。 <ol><li> 「nMOSFETの &quot;モードを選択します。 </li><li>モジュール- &quot;V BG I D」を選択します。 注：I Dは、ドレイン/ソース電流であり、V BGはバックゲート電圧です。 </li><li> -1 3.0 V（間隔= 0.2 V）にゲート電位（V BG）を掃引しながら一定のバイアス電圧（V D = 0.5 V）を設定します。 </li><li> V BG曲線 - I Dを得るために、Runアイコンをクリックします。 </li></ol></li></ol></li></ol> 5. DNAバイオセンシング注：典型的な実験では、I D - V B G曲線はさらなる変動はOBSEされていないことを確認するために、3回に決定されますrved。 <ol><li> ベースラインの決意 <ol><li>シリンジポンプ（流量：5.0ミリリットル/時間）を用いて10分間DNAプローブを固定化SNW表面への10mMのNa-PB液（pH7.0）を供給し、次いで30分間SNWインキュベートします。 </li><li>デバイスのI Dを （ステップ4.2.2を繰り返し）を測定します。 </li></ol></li><li> DNA / DNAハイブリダイゼーションの検知 <ol><li>シリンジポンプを用いて10分間DNAプローブを固定化SNW表面上に負荷10 pMの相補的標的DNAは（流速：5.0ミリリットル/時間）、その後30分間SNWインキュベートします。 </li><li>未結合のターゲットDNAを洗浄する：シリンジポンプを用いて10分間SNW表面上の10mMのNa-PB液（pH 7.0）を提供（5.0ミリリットル/時間の流速）。 </li><li>デバイスのI Dを測定するための手順を繰り返し4.2.2。 </li></ol></li><li> DNA / DNAハイブリダイゼーションのシグナルを再確認。 <ol><li>トンへの負荷1 nMの回復DNA彼はDNAシリンジポンプを用いて10分間SNW表面をプローブ固定化（流速：5.0ミリリットル/時間）、その後30分間SNWインキュベートします。 </li><li>シリンジポンプ（5.0ミリリットル/時間の流速）を使用して10分間SNW表面上の10mMのNa-PB液（pH 7.0）を配信します。 </li><li>デバイスのI Dを測定するための手順を繰り返し4.2.2。 </li></ol></li><li> 負の制御 <ol><li>シリンジポンプを用いて10分間DNAプローブを固定化SNW表面上に負荷100 pMの非相補的DNAは、（流速：5.0ミリリットル/時間）、その後30分間SNWインキュベートします。 </li><li>シリンジポンプ（5.0ミリリットル/時間の流速）を使用して10分間SNW表面上の10mMのNa-PB液（pH 7.0）を配信します。 </li><li>デバイスのI Dを測定するための手順を繰り返し4.2.2。 </li></ol></li></ol>

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C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=A+simple+and+low-cost+method+to+fabricate+TFTs+with+poly-Si+nanowire+channel.">A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel.</a> Ieee Electr Device L. 26, 643-645 (2005).</li><li>Lin, H. C., Lee, M. H., Su, C. J., Shen, S. W. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Fabrication+and+characterization+of+nanowire+transistors+with+solid-phase+crystallized+poly-Si+channels.">Fabrication and characterization of nanowire transistors with solid-phase crystallized poly-Si channels.</a> Ieee T Electron Dev. 53, 2471-2477 (2006).</li><li>Doering, R., Nishi, Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> Handbook of semiconductor manufacturing technology. , (2008).</li><li>Lu, M. P., Hsiao, C. Y., Lai, W. T., Yang, Y. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Probing+the+sensitivity+of+nanowire-based+biosensors+using+liquid-gating.">Probing the sensitivity of nanowire-based biosensors using liquid-gating.</a> Nanotechnology. 21 (425505), (2010).</li><li>Gaspar, J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Digital+lock+in+amplifier:+study,+design+and+development+with+a+digital+signal+processor.">Digital lock in amplifier: study, design and development with a digital signal processor.</a> Microprocess Microsy. 28, 157-162 (2004).</li><li>Vezenov, D. V., Noy, A., Rozsnyai, L. F., Lieber, C. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Force+titrations+and+ionization+state+sensitive+imaging+of+functional+groups+in+aqueous+solutions+by+chemical+force+microscopy.">Force titrations and ionization state sensitive imaging of functional groups in aqueous solutions by chemical force microscopy.</a> J Am Chem Soc. 119, 2006-2015 (1997).</li><li>Townsend, M. B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Experimental+evaluation+of+the+FluChip+diagnostic+microarray+for+influenza+virus+surveillance.">Experimental evaluation of the FluChip diagnostic microarray for influenza virus surveillance.</a> J Clin Microbiol. 44, 2863-2871 (2006).</li><li>Wang, L. C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Simultaneous+detection+and+differentiation+of+Newcastle+disease+and+avian+influenza+viruses+using+oligonucleotide+microarrays.">Simultaneous detection and differentiation of Newcastle disease and avian influenza viruses using oligonucleotide microarrays.</a> Vet Microbiol. 127, 217-226 (2008).</li><li>Lin, C. -. H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Recovery+Based+Nanowire+Field-Effect+Transistor+Detection+of+Pathogenic+Avian+Influenza+DNA.">Recovery Based Nanowire Field-Effect Transistor Detection of Pathogenic Avian Influenza DNA.</a> Jpn J Appl Phys. 51 (02BL02), (2012).</li><li>Lee, K. N., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Well+controlled+assembly+of+silicon+nanowires+by+nanowire+transfer+method.">Well controlled assembly of silicon nanowires by nanowire transfer method.</a> Nanotechnology. 18 (445302), (2007).</li><li>Li, Z., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Sequence-specific+label-free+DNA+sensors+based+on+silicon+nanowires.">Sequence-specific label-free DNA sensors based on silicon nanowires.</a> Nano Lett. 4, 245-247 (2004).</li><li>McAlpine, M. C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-performance+nanowire+electronics+and+photonics+on+glass+and+plastic+substrates.">High-performance nanowire electronics and photonics on glass and plastic substrates.</a> Nano Lett. 3, 1531-1535 (2003).</li><li>Cui, Y., Wei, Q., Park, H., Lieber, C. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Nanowire+nanosensors+for+highly+sensitive+and+selective+detection+of+biological+and+chemical+species.">Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species.</a> Science. 293, 1289-1292 (2001).</li><li>Patolsky, F., Zheng, G., Lieber, C. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Nanowire-based+biosensors.">Nanowire-based biosensors.</a> Anal Chem. 78, 4260-4269 (2006).</li><li>Hsiao, C. Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Novel+poly-silicon+nanowire+field+effect+transistor+for+biosensing+application.">Novel poly-silicon nanowire field effect transistor for biosensing application.</a> Biosens Bioelectron. 24, 1223-1229 (2009).</li></ol>

The authors have nothing to disclose.

トップダウンとボトムアップの製造はsSNWFETsためのアプローチ商業化するため、そのコスト32,33、SNW位置制御34,35、およびその低生産規模36のために困難であると考えられます。これとは対照的に、pSNWFETsを製造することは簡単で低コスト37です。側壁スペーサ形成技術（ 図1）と、トップダウンアプローチと組み合わせて、SNWの大きさは、反応性プ?...

シリコンナノワイヤ電界効果トランジスタ（SNWFETs）は、超高感度の利点と環境電荷変動に直接的な電気的応答を有します。負（または正に）帯電した分子は、シリコンナノワイヤー（SNW）に近づくときに、例えばn型SNWFETsにおいて、SNW内のキャリアが枯渇（又は蓄積）されています。その結果、SNWFETの導電率が減少（または増加）1。したがって、SNWFET装置のSNW面付近に荷電分子を検出することができます。細胞表面上の酵素、タンパク質、ヌクレオチド、および多くの分子を含む重要な生体分子は、電荷キャリアであり、SNWFETsを用いてモニターすることができます。特にSNWの生体分子プローブを固定化する適切な改変、で、SNWFETはラベルフリーバイオセンサーへと発展することができます。 バイオマーカーを用いたサーベイランスは、疾患を診断するために重要です。 表1に示すように 、いくつかの研究はNWFE使用していますTベースの無標識、超高感度バイオセンサ、及び図3に示すように、神経信号4を結合する単一のウイルス2、アデノシン三リン酸、およびキナーゼを含む種々の生物学的標的のリアルタイム検出、金属イオン5,6、細菌毒素7、ドーパミン8、DNA 9-11、RNA 12,13、酵素と癌バイオマーカー14-19、ヒトのホルモン20、およびサイトカイン21,22。これらの研究は、NWFETベースのバイオセンサーは、溶液中の生物学的および化学種の広い範囲のための強力な検出プラットフォームを表していることを実証しました。 SNWFETベースのバイオセンサでは、デバイスのSNW表面上に固定化されたプローブは、特定のbiotargetを認識する。バイオプローブを固定化することは、通常の一連の工程を含み、すべてのステップが正常にバイオセンサーの適切な機能を確保するために行われることが重要です。様々な技術は、Sを分析するために開発されていますX線光電子分光法（XPS）、エリプソメトリー、接触角測定、原子間力顕微鏡（AFM）、走査型電子顕微鏡（SEM）を含むurface組成物。このようなXPS、エリプソメトリー、および接触角測定などの方法が他の同様の材料で行わ平行実験に依存しているのに対し、このようなAFMやSEMなどの方法は、ナノワイヤデバイス上のバイオプローブの固定化の直接的な証拠を提供します。本稿では、2つの独立した方法を用いて、各変更ステップの確認を説明します。 XPSは、シリコンウェーハ上の特定の原子の濃度を調べるために使用され、デバイスの電気的特性の変化を直接SNW表面上の電荷の変化を確認するために測定されます。我々は、このプロトコルを説明する例として、多結晶SNWFETs（pSNWFETs）を用いてDNAのバイオセンシングを使用します。 SNW表面にDNAプローブを固定するには、3つの手順を実行します。SNW、アルのネイティブヒドロキシル表面上のアミン基修飾をアルデヒド基の修飾、及び5&#39;-アミ​​ノ修飾DNAプローブの固定化。表面電荷はチャネル電流とコンダクタンス1を変えるゲート誘電体上にローカル界面電位変化を引き起こすので、各修正ステップにおいて、デバイスは、直接、SNW表面上に固定化された官能基の電荷の変化を検出することができます。電気pSNWFETデバイスの電気的特性を調節することができるSNW面を囲む電荷。従って、SNWの表面特性はpSNWFETデバイスの電気的特性を決定する際に重要な役割を果たしています。報告された手順では、SNW表面にバイオプローブの固定化は、直接決定することができ、電気的測定によって確認され、デバイスがバイオセンシング応用のために準備されます。

<table><tbody><tr><td>Acetone</td><td>ECHO</td><td>AH-3102</td><td></td></tr><tr><td>(3-Amonopropyl)triethoxysilane (APTES), &amp;ge;98%</td><td>Sigma-Aldrich</td><td>A3648</td><td>Danger</td></tr><tr><td>Ethanol, anhydrous, 99.5%</td><td>ECHO</td><td>484000203108A-72EC</td><td></td></tr><tr><td>Glutaraldehyde solution (GA), 50%</td><td>Sigma-Aldrich</td><td>G7651</td><td>Avoid light</td></tr><tr><td>Sodium cyanoborohydride, &amp;ge;95.0%&amp;nbsp;</td><td>Fluka</td><td>71435</td><td>Danger and deliquescent</td></tr><tr><td>Sodium phosphate tribasic dodecahydrate, &amp;ge;98%</td><td>Sigma</td><td>04277</td><td></td></tr><tr><td>Phosphoric acid, &amp;ge;99.0%</td><td>Fluka</td><td>79622</td><td>Deliquescent</td></tr><tr><td>Photoresist (iP3650)</td><td>Tokyo Ohka Kogyo Co., LTD</td><td>THMR-iP3650 HP</td><td></td></tr><tr><td>Synthetic oligonucleotides, HPLC purified</td><td>Protech Technology</td><td></td><td></td></tr><tr><td>Tris(hydroxymethyl)aminomethane (Tris), &amp;ge;99.8%</td><td>USB</td><td>75825</td><td></td></tr><tr><td>Keithley 2636 System SourceMeter</td><td>Keithley</td><td></td><td></td></tr><tr><td>SR830 DSP Lock-In Amplifier</td><td>Stanford Research Systems</td><td></td><td></td></tr><tr><td>SR570 Low-noise Current Preamplifier</td><td>Stanford Research Systems</td><td></td><td></td></tr><tr><td>Ni PXI Express</td><td>National Instruments</td><td></td><td></td></tr></tbody></table>

preparation of silicon nanowire field-effect transistor for chemical and biosensing applications

Surveillance using biomarkers is critical for the early detection, rapid intervention, and reduction in the incidence of diseases. In this study, we describe the preparation of polycrystalline silicon nanowire field-effect transistors (pSNWFETs) that serve as biosensing devices for biomarker detection. A protocol for chemical and biomolecular sensing by using pSNWFETs is presented. The pSNWFET device was demonstrated to be a promising transducer for real-time, label-free, and ultra-high-sensitivity biosensing applications. The source/drain channel conductivity of a pSNWFET is sensitive to changes in the environment around its silicon nanowire (SNW) surface. Thus, by immobilizing probes on the SNW surface, the pSNWFET can be used to detect various biotargets ranging from small molecules (dopamine) to macromolecules (DNA and proteins). Immobilizing a bioprobe on the SNW surface, which is a multistep procedure, is vital for determining the specificity of the biosensor. It is essential that every step of the immobilization procedure is correctly performed. We verified surface modifications by directly observing the shift in the electric properties of the pSNWFET following each modification step. Additionally, X-ray photoelectron spectroscopy was used to examine the surface composition following each modification. Finally, we demonstrated DNA sensing on the pSNWFET. This protocol provides step-by-step procedures for verifying bioprobe immobilization and subsequent DNA biosensing application.

種々 SNWFETsは、バイオセンサー（ 表1）の変換器として機能することが報告されています。単結晶SNWFETs（sSNWFETs）とpSNWFETsは、水溶液中の変換器と同等の電気特性を示し、両者は多くのバイオセンシング用途を有することが報告されています。本研究で使用pSNWFET装置の有利な特徴は、簡単かつ低コストな製造手順である。 図1aは pSNWFETの製造に...

Watch this Scientific Journal Video about Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications at JoVE.com

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

We describe key steps for biosensing by using polysilicon nanowire field-effect transistors, including the preparation of the device and the immobilization and confirmation of a DNA molecular probe on the nanowire surface, as well as conditions for DNA sensing.

化学とバイオセンシングアプリケーション用のシリコンナノワイヤ電界効果トランジスタの作製

Surveillance using biomarkers is critical for the early detection, rapid intervention, and reduction in the incidence of diseases. In this study, we ...

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11.0K ビュー.  National Chiao Tung University. We describe key steps for biosensing by using polysilicon nanowire field-effect transistors, including the preparation of the device and the immobilization and confirmation of a DNA molecular probe on the nanowire surface, as well as conditions for DNA sensing.

ビデオ: Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms.
In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station.

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra ...

工学

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

単電子揚水用のシリコン金属酸化膜半導体量子ドット

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

We demonstrate a method for the low temperature growth (350 &#176;C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive thin-films. Due to the low growth temperature, the process allows integration with modern low-&#954; dielectrics and some flexible substrates. The process is compatible with standard semiconductor fabrication, and a method for the fabrication of electrical 4-point probe test structures for vertical interconnect test structures is presented. Using scanning electron microscopy the morphology of the CNT bundles is investigated, which demonstrates vertical alignment of the CNT and can be used to tune the CNT growth time. With Raman spectroscopy the crystallinity of the CNT is investigated. It was found that the CNT have many defects, due to the low growth temperature. The electrical current-voltage measurements of the test vertical interconnects displays a linear response, indicating good ohmic contact was achieved between the CNT bundle and the top and bottom metal electrodes. The obtained resistivities of the CNT bundle are among the average values in the literature, while a record-low CNT growth temperature was used.

A method for the growth of low temperature vertically-aligned carbon nanotubes, and the subsequent fabrication of vertical interconnect electrical test structures using semiconductor fabrication is presented.

半導体技術との互換性低温カーボンナノチューブ垂直相互接続の作製

We demonstrate a method for the low temperature growth (350 &#176;C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive ...

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

The unique electronic properties and high surface-to-volume ratios of single-walled carbon nanotubes (SWNT) and semiconductor nanowires (NW) 1-4 make them good candidates for high sensitivity biosensors. When a charged molecule binds to such a sensor surface, it alters the carrier density5 in the sensor, resulting in changes in its DC conductance. However, in an ionic solution a charged surface also attracts counter-ions from the solution, forming an electrical double layer (EDL). This EDL effectively screens off the charge, and in physiologically relevant conditions ~100 millimolar (mM), the characteristic charge screening length (Debye length) is less than a nanometer (nm). Thus, in high ionic strength solutions, charge based (DC) detection is fundamentally impeded6-8.
We overcome charge screening effects by detecting molecular dipoles rather than charges at high frequency, by operating carbon nanotube field effect transistors as high frequency mixers9-11. At high frequencies, the AC drive force can no longer overcome the solution drag and the ions in solution do not have sufficient time to form the EDL. Further, frequency mixing technique allows us to operate at frequencies high enough to overcome ionic screening, and yet detect the sensing signals at lower frequencies11-12. Also, the high transconductance of SWNT transistors provides an internal gain for the sensing signal, which obviates the need for external signal amplifier.
Here, we describe the protocol to (a) fabricate SWNT transistors, (b) functionalize biomolecules to the nanotube13, (c) design and stamp a poly-dimethylsiloxane (PDMS) micro-fluidic chamber14 onto the device, and (d) carry out high frequency sensing in different ionic strength solutions11.

We describe the device fabrication and measurement protocol for carbon nanotube based high frequency biosensors. The high frequency sensing technique mitigates the fundamental ionic (Debye) screening effect and allows nanotube biosensor to be operated in high ionic strength solutions where conventional electronic biosensors fail. Our technology provides a unique platform for point-of-care (POC) electronic biosensors operating in physiologically relevant conditions.

高イオン強度ソリューションで感知するためのカーボンナノチューブ高周波ナノエレクトロニクスバイオセンサーの作製

The unique electronic properties and high surface-to-volume ratios of single-walled carbon nanotubes (SWNT) and semiconductor nanowires (NW) 1-4 make them ...

生物工学

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of nanowires. DEP is used for nanowire analysis, characterization, and for solution-based fabrication of semiconducting devices. The method works by applying an alternating electric field between metallic electrodes. The nanowire formulation is then dropped onto the electrodes which are on an inclined surface to create a flow of the formulation using gravity. The nanowires then align along the gradient of the electric field and in the direction of the liquid flow. The frequency of the field can be adjusted to select nanowires with superior conductivity and lower trap density. 
In this work, flow-assisted DEP is used to create nanowire field effect transistors. Flow-assisted DEP has several advantages: it allows selection of nanowire electrical properties; control of nanowire length; placement of nanowires in specific areas; control of orientation of nanowires; and control of nanowire density in the device. 
The technique can be expanded to many other applications such as gas sensors and microwave switches. The technique is efficient, quick, reproducible, and it uses a minimal amount of dilute solution making it ideal for the testing of novel nanomaterials. Wafer scale assembly of nanowire devices can also be achieved using this technique, allowing large numbers of samples for testing and large-area electronic applications.

In this paper, flow assisted dielectrophoresis is demonstrated for the self-assembly of nanowire devices. The fabrication of a silicon nanowire field effect transistor is shown as an example.

誘電泳動の流れ支援: 高性能低温硬化型ナノワイヤ デバイス作製のための低コストの方法

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of ...

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape method or individual WS2 nanotubes by dispersing the suspension of WS2 nanotubes. The selected samples have been fabricated into devices by the use of the electron beam lithography and electrolyte is put on the devices. We have characterized the electronic properties of the devices under applying the gate voltage. In the small gate voltage region, ions in the electrolyte are accumulated on the surface of the samples which leads to the large electric potential drop and resultant electrostatic carrier doping at the interface. Ambipolar transfer curve has been observed in this electrostatic doping region. When the gate voltage is further increased, we met another drastic increase of source-drain current which implies that ions are intercalated into layers of WS2 and electrochemical carrier doping is realized. In such electrochemical doping region, superconductivity has been observed. The focused technique provides a powerful strategy for achieving the electric-filed-induced quantum phase transition.

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Here, we present a protocol to control the carrier number in solids by using the electrolyte.

電解質ゲートによって WS2ナノデバイスにおける電子状態の電界制御

A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape ...

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, but several challenging points remain, such as a low absorption efficiency due to a thin active layer and low flexibility. We present an advanced method to fabricate a flexible phototransistor array with an improved electrical performance. The outstanding electrical performance is driven by a low dark current owing to deep impurity doping. Stretchable and flexible metal interconnectors simultaneously offer electrical and mechanical stabilities in a highly deformed state. The protocol explicitly describes the fabrication process of the phototransistor using a thin silicon membrane. By measuring I-V characteristics of the completed device in deformed states, we demonstrate that this approach improves the mechanical and electrical stabilities of the phototransistor array. We expect that this approach to a flexible phototransistor can be widely used for the applications of not only next-generation imaging systems/optoelectronics but also wearable devices such as tactile/pressure/temperature sensors and health monitors.

We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.

横 NIPIN フォト トランジスタを用いた柔軟な画像センサーの作製

Flexible photodetectors have been intensely studied for the use of curved image sensors, which are a crucial component in bio-inspired imaging systems, ...

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D materials is still in nascent stages, scientists cannot fully rely on traditional semiconductor techniques for related research. Delicate processes from locating the materials to electrode definition need to be well controlled. In this article, a universal fabrication protocol required in manufacturing nanoscale electronics, such as 2D quasi-heterojunction bipolar transistors (Q-HBT), and 2D back-gated transistors are demonstrated. This protocol includes the determination of material position, electron beam lithography (EBL), metal electrode definition, et al. A step by step narrative of the fabrication procedures for these devices are also presented. Furthermore, results show that each of the fabricated devices has achieved high performance with high repeatability. This work reveals a comprehensive description of process flow for preparing 2D nano-electronics, enables the research groups to access this information, and pave the way toward future electronics.

The article aims to introduce a standard and reliable fabrication procedure for the development of future low dimensional nanoelectronics.

二次元ナノエレクトロニクスを作製する標準および信頼性の高いメソッド

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D ...

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

In the current study, graphene and its derivatives have been investigated and used for many applications, including electronics, sensing, energy storage, and photocatalysis. Synthesis and fabrication of high quality, good uniformity, and low defects graphene are critical for high-performance and highly sensitive devices. Among many synthesis methods, chemical vapor deposition (CVD), considered a leading approach to manufacture graphene, can control the number of graphene layers and yield high-quality graphene. CVD graphene needs to be transferred from the metal substrates on which it is grown onto&#160;insulating substrates for practical applications. However, separation and transferring of graphene onto new substrates are challenging for a uniform layer without damaging or affecting graphene&#39;s structures and properties. Additionally, electrolyte-gated graphene field-effect transistor (EGGFET) has been demonstrated for its wide applications in various biomolecular detections because of its high sensitivity and standard device configuration. In this article, poly (methyl methacrylate) (PMMA)-assisted graphene transferring approach, fabrication of graphene field-effect transistor (GFET), and biomarker immunoglobulin G (IgG) detection are demonstrated. Raman spectroscopy and atomic force microscopy were applied to characterize the transferred graphene. The method is shown to be a practical approach for transferring clean and residue-free graphene while preserving the underlying graphene lattice onto an insulating substrate for electronics or biosensing applications.

The present protocol demonstrates the development of electrolyte-gated graphene field-effect transistor (EGGFET) biosensor and its application in biomarker immunoglobulin G (IgG) detection.

バイオマーカー検出のための電解質依存性グラフェン電界効果トランジスタの開発と機能化

In the current study, graphene and its derivatives have been investigated and used for many applications, including electronics, sensing, energy storage, ...

Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes

With advances in electronics and fabrication technology, intracortical microelectrodes have undergone substantial improvements enabling the production of sophisticated microelectrodes with greater resolution and expanded capabilities. The progress in fabrication technology has supported the development of biomimetic electrodes, which aim to seamlessly integrate into the brain parenchyma, reduce the neuroinflammatory response observed after electrode insertion and improve the quality and longevity of electrophysiological recordings. Here we describe a protocol to employ a biomimetic approach recently classified as nano-architecture. The use of focused ion beam lithography (FIB) was utilized in this protocol to etch specific nano-architecture features into the surface of non-functional and functional single shank intracortical microelectrodes. Etching nano-architectures into the electrode surface indicated possible improvements of biocompatibility and functionality of the implanted device. One of the benefits of using FIB is the ability to etch on manufactured devices, as opposed to during the fabrication of the device, facilitating boundless possibilities to modify numerous medical devices post-manufacturing. The protocol presented herein can be optimized for various material types, nano-architecture features, and types of devices. Augmenting the surface of implanted medical devices can improve the device performance and integration into the tissue.

We have shown that the etching of nano-architecture into intracortical microelectrode devices may reduce the inflammatory response and has the potential to improve electrophysiological recordings. The methods described herein outline an approach to etch nano-architectures into the surface of non-functional and functional single shank silicon intracortical microelectrodes.

マイクロ電極へのエッチングナノアーキテクチャへの集束イオンビームリソグラフィー

With advances in electronics and fabrication technology, intracortical microelectrodes have undergone substantial improvements enabling the production of ...

化学とバイオセンシングアプリケーション用のシリコンナノワイヤ電界効果トランジスタの作製

要約

さらに動画を探す

この動画の章

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

単電子揚水用のシリコン金属酸化膜半導体量子ドット

半導体技術との互換性低温カーボンナノチューブ垂直相互接続の作製

高イオン強度ソリューションで感知するためのカーボンナノチューブ高周波ナノエレクトロニクスバイオセンサーの作製

誘電泳動の流れ支援: 高性能低温硬化型ナノワイヤデバイス作製のための低コストの方法

電解質ゲートによって WS₂ナノデバイスにおける電子状態の電界制御

横 NIPIN フォトトランジスタを用いた柔軟な画像センサーの作製

二次元ナノエレクトロニクスを作製する標準および信頼性の高いメソッド

バイオマーカー検出のための電解質依存性グラフェン電界効果トランジスタの開発と機能化

マイクロ電極へのエッチングナノアーキテクチャへの集束イオンビームリソグラフィー

化学とバイオセンシングアプリケーション用のシリコンナノワイヤ電界効果トランジスタの作製

要約

さらに動画を探す

この動画の章

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

単電子揚水用のシリコン金属酸化膜半導体量子ドット

半導体技術との互換性低温カーボンナノチューブ垂直相互接続の作製

高イオン強度ソリューションで感知するためのカーボンナノチューブ高周波ナノエレクトロニクスバイオセンサーの作製

誘電泳動の流れ支援: 高性能低温硬化型ナノワイヤ デバイス作製のための低コストの方法

電解質ゲートによって WS2ナノデバイスにおける電子状態の電界制御

横 NIPIN フォト トランジスタを用いた柔軟な画像センサーの作製

二次元ナノエレクトロニクスを作製する標準および信頼性の高いメソッド

バイオマーカー検出のための電解質依存性グラフェン電界効果トランジスタの開発と機能化

マイクロ電極へのエッチングナノアーキテクチャへの集束イオンビームリソグラフィー

誘電泳動の流れ支援: 高性能低温硬化型ナノワイヤデバイス作製のための低コストの方法

電解質ゲートによって WS₂ナノデバイスにおける電子状態の電界制御

横 NIPIN フォトトランジスタを用いた柔軟な画像センサーの作製