이 작품은 재정적으로 과학 기술과 중국의 공화국의 국립 과학위원회 (계약 번호. NSC 101-2221-E-027-042과 NSC 101-2622-E-027-003-CC2)의 교육부의 지원되었다. DH 웨이 덕분에 박사 Shechtman 상에 대한 기술의 국립 대만 대학 (TAIPEI TECH) 상.

1. 기판 준비 및 청소 <ol><li> 시 (100) 웨이퍼에서 10mm X 10mm의 실리콘 기판을 잘라. </li><li> 10mm X 10mm의 유리 기판을 잘라. </li><li> 15 분 동안 이소프로판올를 10 분 동안 10 분, 알코올, 아세톤과 실리콘 기판과 유리를 청소, 초음파 세정기를 사용. </li><li> 탈 이온수 (DI) 물로 3 회 기판을 씻어. </li><li> - 불어 건조 질소 총을 가진 기판을. </li></ol> 2. DEZn 준비 및 보존 주 : 디 에틸 또한 DEZn 호출 (C 2 H 5) 2 Zn으로하면, 두 에틸기에 결합 아연 중심 이루어진 고도로 발화성 유기 아연 화합물이다. DEZn를 사용하면 혼자 작업하지 마십시오. DEZn 매우 독성 산소와 물에 민감, 물 근처 DEZn를 배치하지 않도록주의. 항상 보호 마스크와 보안경을 착용; 모든 절차는 후드에서 수행해야합니다. 가장 중요한 것은, 사용되지 않는 DEZn는 ㄴ합니다전자는 5 O를 C 환경에 저장된다. 참고 : DEZn의 첫 번째 사용을 위해, 2 단계 그렇지 않은 경우에 따라 3 단계에서 실험을 시작합니다. <ol><li> 병에서 30 ML의 DEZn를 끌어 후 강철 실린더에 넣은 비커에 주입하는 주사기를 사용합니다. </li><li> 반응 챔버와 강철 실린더를 연결하는 아연 도금 강철 파이프를 사용한다. </li><li> (6 토르) 진공 환경에서 철강 실린더를 펌프 기계 펌프와 볼 밸브를 사용합니다. 주 : DEZn 심각 산소와 반응하여,이를 진공 환경에서 유지되어야한다. </li><li> 5 O를 C 환경에서 사용되지 않는 DEZn를 저장합니다. </li></ol> 3. PECVD 챔버 및 준비 된 ZnO 박막의 합성 주 : 플라즈마 강화 화학 기상 증착의 개략도가도 1에 도시된다. <ol><li> 30mm에서 샤워 전극 및 샘플 단계 사이의 작동 거리를 설정합니다. </li> &lt;DEZn 입구에서 3cm 거리가있는 곳 리&gt; 적절한 위치에 반응 챔버의 샘플 무대에 기판을 놓습니다. </li><li> 로터리 펌프를 열고 서서히 게이트 밸브, 버터 플​​라이 밸브를 엽니 다. </li><li> 반응기 챔버의 배경 압력이 30 mTorr로보다 낮은 때까지 기다립니다. </li><li> 로터리 펌프에 연결하는 게이트 밸브, 버터 플​​라이 밸브를 닫습니다. </li><li> 이어서 3 X 10-6 토르의 고진공에 도달하는 터보 펌프와 상대 게이트 밸브를 연다. </li><li> 필요한 진공 상태에 도달 한 후, 상기 열 제어기를 열고 합성 온도로 샘플을 가열 스테이지 (200, 300, 400, 500, 및 다른 실험 파라미터 O 600 C). </li><li> 온도와 압력이 필요 조건에 도달하면, 터보 펌프를 닫고 동시에 로터리 펌프에 연결되는 게이트 밸브 및 버터 플​​라이 밸브를 연다. </li><li> 이어서, 가스 도입 밸브를 열어 아르곤 g를 켜동시에 유량 제어기 등. </li><li> 챔버 내로 아르곤 가스 (0.167 ㎖ / 초)를 흐른다. </li><li> 500 mTorr로에 챔버 압력을 설정합니다. </li><li> RF (13.56 메가 헤르츠) 발생기와 매칭 네트워크를 켠 후, 샘플을 15 분 동안 표면 퍼지 100 W의 RF 전력을 설정합니다. </li><li> 샘플 퍼지 종료 후, 70 W.까지 RF 전력을 켜 </li><li> 다음에, 이산화탄소 가스 컨트롤러와 가스 입구 밸브를 켜. </li><li> 챔버 내에 이산화탄소 (0.5 ㎖ / 초)를 흐른다. </li><li> 6 토르의 작동 압력을 설정합니다. </li><li> 챔버 압력은 6 토르에 도달 한 후, 동시에 DEZn 연결된 챔버 개방 볼 밸브로 (DEZn)을 디 에틸 행하는 캐리어 가스로서 고순도 아르곤 (0.167 ㎖ / 초)를 흐른다. 동시에, ZnO의 필름의 합성을 시작한다. </li><li> 5 분 동안의 ZnO 막의 플라즈마 합성을 계속한다. </li><li> 산화 아연 박막을 합성 한 후, 순차로이 RF 발생기, 볼 밸브, 열 콘을 해제콘트롤러와 가스 입구 밸브와 함께 가스 유량 제어기의 모든. </li><li> 샘플 단계의 온도가 실온까지 냉각 될 때 샘플을 가져 가라. 주 : 냉각 속도가 약 1.8 O C / 분이다. </li></ol> 합성 된 상태의 ZnO 박막 상에 맞물린 형상 패턴의 제조 4. 주 : 리소그래피 공정의 개략도가도 3에 도시되어있다. <ol><li> 10 분 동안 150 ℃로 합성 된 ZnO의 샘플을 굽는 핫 플레이트를 사용합니다. </li><li> 스핀 코터에 샘플을 놓고, 다음의 ZnO 샘플 상에 100 μL와 포토 레지스트의 액체 용액 (S1813)를 분배. </li><li> 10 초 동안 800 rpm에서 스핀 코터를 실행 한 후 균일 한 박막을 생산하기 위해 30 초 동안 3,000 rpm으로 가속화 할 수 있습니다. </li><li> 부드러운 빵을 90 초 동안 105 ℃로 포토 레지스트 코팅 된 ZnO 샘플. </li><li> 소프트 베이크 한 후, 포토 레지스트 - 코팅 된 샘플을 덮지 노출하는 UV 광을 사용하여마스크 얼 라이너에 의해 포토 마스크를 GH. 노출 시간은 2 초이며, 전력은 400 (W)이다 주 :. 포토 마스크의 패턴 인 폭 0.03 mm 길이 4mm (14쌍) 및도 2에 도시 된 바와 같이 0.15 mm의 전극 간 간격을 갖는, 물리는 형상으로 설계은 주목할 가치가 그 총 감광 지역은 검출기 84.32 mm의 2입니다. </li><li> 노광 과정을 거친 후, 핀셋은 시료를 클립하고, 그 후 희석하여 현상액에 담가 35 (S)가 개발 한 샘플을 수득하는 좌우로 요동 동작을 통해 (현상 제의 50 ㎖ 및 탈 이온수 150 ㎖를 혼합). </li><li> 질소 가스로 개발 된 탈 이온수 샘플과 건조를 씻어. </li><li> 그대로 패턴을 확인하기 위해 광학 현미경을 사용합니다. 그렇지 않은 경우, 포토 레지스트를 제거하는 아세톤을 사용하여 완벽한 패턴을 얻을 때까지 반복 4.7 4.2 단계를 반복합니다. </li><li> 하드 20 분 동안 120 ℃로 샘플을 굽는다. </li></ol><ol><li> 화학적 리프트 오프 절차를 진행하기 전에 샘플 개발의 위에 도전성 박막의 Pt 층 (100 nm의)을 증착하기 위해 RF 마그네트론 스퍼터링 시스템을 사용한다. </li><li> 13mm에서 타겟과 기판 사이의 거리를 설정합니다. </li><li> 5 mTorr로의 거친 진공에 도달하기 위해 기계 펌프를 사용합니다. </li><li> 다음으로, 7 × 10-7 Torr의 고진공을 얻기 위해 터보 펌프를 사용한다. </li><li> 챔버는 높은 진공에 도달 할 때까지 잠깐, 터보 펌프를 닫고 이후 기계식 펌프를 엽니 다. </li><li> 100 mTorr 이하의 작동 압력에 도달 할 때까지 챔버 압력 매스 플로우 콘트롤러에 의해 챔버에 0.3 ㎖ / sec의 아르곤 가스 유량. </li><li> 직류 (DC)를 켜고 전원을 방전하고 25 분 동안 샘플에 백금 박막 전극을 스퍼터링 15 W에서 DC 전력을 설정. </li><li> 백금 전극층 마그네트론 sputt 의해 증착 된 후에방법 거릴, 챔버에서 샘플을 가져 가라. </li><li> 포토 레지스트를 제거하기 위해 초음파 세정기로 화학적 리프트 오프 프로세스에 대한 아세톤에 액체 시료를 담그. </li><li> 철저 된 ZnO 박막에 깍지 같은 백금 전극을 포토 레지스트를 제거하고 얻기 위해 1 분에 청소 시간을 설정합니다. </li></ol> 6. RTA 처리 <ol><li> RTA 시스템에로 제작 된 백금 / ZnO의 샘플을 놓습니다. </li><li> 20 mTorr로에 RTA 챔버 압력을 펌프 기계 펌프와 게이트 밸브를 사용합니다. </li><li> 챔버 압력은 20 mTorr 이하에 도달 할 때까지 챔버에 0.3 ㎖ / sec로 아르곤 가스 흐름 5 토르의 작동 압력을 설정 기다려. </li><li> 다음에, 100의 C O / 분으로서 가열 속도를 설정한다. </li><li> 그 후, 10 분 동안 450 ℃로 샘플을 어닐링. </li><li> 어닐링 후, 샘플을 실온으로 냉각 될 때까지, 다음 샘플을 꺼내 기다립니다. </li></ol>

<ol>
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F., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=superhigh+gain+visible-blind+UV+detector+and+optical+logic+gates+based+on+nonpolar+a-axial+GaN+nanowire.">superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire.</a> Nanoscale. 6, 12009-12017 (2014).</li><li>Inamdar, S. I., Rajpure, K. Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=High-performance+metal-semiconductor-metal+UV+photodetector+based+on+spray+deposited+ZnO+thin+films.">High-performance metal-semiconductor-metal UV photodetector based on spray deposited ZnO thin films.</a> J. Alloy. Compd. 595, 55-59 (2014).</li><li>Tian, C. G., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Effects+of+continuous+annealing+on+the+performance+of+ZnO+based+metal-semiconductor-metal+ultraviolet+photodetectors.">Effects of continuous annealing on the performance of ZnO based metal-semiconductor-metal ultraviolet photodetectors.</a> Mater. Sci. Eng. B-Adv. Funct.Solid-State Mater. 184, 67-71 (2014).</li><li>Chen, H. Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Realization+of+a+self-powered+ZnO+MSM+UV+photodetector+with+high+responsivity+using+an+asymmetric+pair+of+Au+electrodes.">Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes.</a> J. Mater. Chem. C. 2, 9689-9694 (2014).</li><li>Subramanyam, T. K., Srinivasulu Naidu, ., S, S., Uthanna, <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Effect+of+substrate+temperature+on+the+physical+properties+of+DC+reactive+magnetron+sputtered+ZnO+films.">Effect of substrate temperature on the physical properties of DC reactive magnetron sputtered ZnO films.</a> Opt. Mater. 13, 239-247 (1999).</li><li>Iwanaga, H., Kunishige, A., Takeuchi, S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Anisotropic+thermal+expansion+in+wurtzite-type+crystals.">Anisotropic thermal expansion in wurtzite-type crystals.</a> J. Mater. Sci. 35, 2451-2454 (2000).</li><li>Okaji, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Absolute+thermal+expansion+measurements+of+single-crystal+silicon+in+the+range+300-1300+K+with+an+interferometric+dilatometer.">Absolute thermal expansion measurements of single-crystal silicon in the range 300-1300 K with an interferometric dilatometer.</a> Int. J. Thermophys. 9, 1101-1109 (1988).</li><li>Pearse, R. W. B., Lichtenberg, A. J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=.">.</a> The identification of molecular spectra. , (1976).</li><li>Chao, C. H., Wei, D. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Growth+of+non-polar+ZnO+thin+films+with+different+working+pressures+by+plasma+enhanced+chemical+vapor+deposition.">Growth of non-polar ZnO thin films with different working pressures by plasma enhanced chemical vapor deposition.</a> Jpn. J. Appl. Phys. 53, 11RA05 (2014).</li><li>Lin, B., Fu, Z., Green Jia, Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=luminescent+center+in+undoped+zinc+oxide+films+deposited+on+silicon+substrate.">luminescent center in undoped zinc oxide films deposited on silicon substrate.</a> Appl. Phys. Lett. 79, 943-945 (2001).</li><li>Koida, T., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Radiative+and+nonradiative+excitonic+transitions+in+nonpolar+(110)+and+polar+(000)+and+(0001)+ZnO+epilayers.">Radiative and nonradiative excitonic transitions in nonpolar (110) and polar (000) and (0001) ZnO epilayers.</a> Appl. Phys. Lett. 84 (110), 1079 (2004).</li></ol>

The authors declare that they have no competing financial interests.

중요한 단계 및 수정 1 단계에서 기판을 철저하게 청소하고 1.3 기판에는 기름이나 유기 및 무기 오염이 없다는 것을 확인하기 위해 다음 1.5 단계를해야합니다. 기판 표면상의 그리스 또는 유기 및 무기 오염은 상당히 막의 접착을 감소시킬 것이다. 단계 2의 ZnO 막 제조 공정 전에 가장 중요한 절차이다. DEZn은 매우 독성과 격렬하게 물과 반응하여 쉽게 공...

ZnO의 인해 이러한 RT 큰 여기자 높은 화학적 안정성, 저비용, 비 독성, 광학 펌핑 낮은 전력 임계 넓은 직접 밴드 갭 (3.37 eV의)와 같은 고유 특성에 유망한 와이드 밴드 갭 작용 성 반도체 물질 인 ~ 60 meV 인 1-2의 결합 에너지. 최근, ZnO를 박막은 투명 전도성 산화물 (TCO) 필름, 청색 발광 소자, 전계 효과 트랜지스터, 및 가스 센서 3-6 포함한 많은 응용 분야에서 사용되어왔다. 한편, ZnO의 인듐과 주석이 희귀하고 고가 인 때문에 인듐 주석 산화물 (ITO)을 대체 할 후보 물질이다. 또한, ZnO의 가시 파장 영역과 ITO 막 7-8에 비해 낮은 저항성에서 높은 광 투과율을 가지고있다. 따라서,의 ZnO의 제조, 특성 및 응용 프로그램이 광범위하게보고되고있다. 이 본 연구는 간단한에 의해 높은 C시킴으로써 행한다 (0002)의 ZnO 박막의 합성에 초점을 맞추고효과적인 방법 및 UV 광 검출기를 향해 그 실제 응용 d를. 최근의 연구 결과보고는 고품질의 ZnO 박막은 예컨대 졸 겔법, 무선 주파수 마그네트론 스퍼터링, 금속 유기 화학 기상 증착 (MOCVD) 등 9-14에서와 같은 다양한 기술에 의해 합성 될 수 있다는 것을 나타낸다. 각 기술의 장점과 단점을 갖는다. 예를 들어, 스퍼터 성막의 주요 장점은 매우 높은 융점과 그 대상 재료 여유롭게 기판 상에 스퍼터링되는 것이다. 대조적으로, 스퍼터링 법은 막 구조화 리프트 오프와 결합하는 것이 어렵다. 우리의 연구에서, 플라즈마 강화 화학 기상 증착 (PECVD) 시스템은 높은 품질의 C를 합성 된 ZnO 박막을 사용 하였다시킴으로써 행한다. 플라즈마 충돌은 얇은 막 밀도를 증가시키고, 이온 분해 반응 속도를 향상시킬 수있다 (15)의 합성 과정에 중요한 요소이다. 에또한, 높은 성장 속도와 대 면적의 균일 한 증착은 PECVD 법에 대한 다른 독특한 이점이다. 합성 기술을 제외하고, 기판 상에 양호한 접착 성이 고려되는 또 다른 문제이다. 사파이어의 ZnO와 같은 육방 격자 구조를 가지고 있기 때문에 많은 연구에서 C -plane 사파이어 널리 ZnO의 박막을 이동시킴으로써 행한다 높은 C를 합성하는 기질로서 사용되어왔다. 그러나, ZnO를는 거친 표면 형태 및 면내 방향 (16)으로 배향 된 ZnO 및 C -plane 사파이어 (18 %) 사이의 큰 격자 부적응으로 인한 높은 잔류 (결함 관련) 캐리어 농도를 나타내는 사파이어 기판 상에 합성 하였다. 사파이어 기판과 비교하여, Si 웨이퍼는 산화 아연 합성을위한 또 다른 널리 사용되는 기판이다. 실리콘 웨이퍼는 반도체 산업에 광범위하게 사용되어왔다; 따라서, 실리콘 기판에 고품질의 ZnO 박막의 성장은 neces 매우 중요하다세리. 불행히도, 및 Si와 ZnO의 결정 구조와 열팽창 계수가 결정 품질의 열화로 이어지는 분명히 다르다. 지난 10 년간 많은 노력의 ZnO 버퍼층 (17), 각종 가스 분위기 (18)에서 소둔하고, Si 기판 표면 (19)의 패시베이션을 포함하는 다양한 방법을 사용하여 실리콘 기판 상에 ZnO의 박막의 품질을 향상시키기 위해 이루어지고있다. 본 연구는 성공적으로 높은 C는 임의의 버퍼층 또는 전처리없이 실리콘 기판 상에 ZnO의 박막을 이동시킴으로써 행한다 합성하는 간단하고 효과적인 방법을 제공했다. 실험 결과는 최적의 성장 온도 하에서 합성 된 ZnO 박막 좋은 결정 및 광학 특성을 나타내었다 것으로 나타났다. 결정 구조, RF 플라즈마 조성, 표면 형태 및 된 ZnO 박막의 광학적 특성은 X 선 회절 (XRD), 광 방출 분광법 (OES), 전계 발광에 의해 조사 하였다 SC각각 Anning에 전자 현미경 (FE-SEM), 및 RT의 광 발광 (PL) 스펙트럼. 또한, ZnO의 박막의 투과율을 확인하고 또한보고되었다. 같은 합성 된 ZnO 박막은 자외선 광 검출기 응용 프로그램에 대한 감지 층이 또한 본 연구에서 조사되었다 역임했다. 자외선 광 검출기는 자외선 모니터링에 큰 잠재적 인 응용, 광 스위치, 불꽃 경보, 미사일 온난화 시스템 20-21있다. 이러한 오믹 접촉과 쇼트 키 콘택을 포함하여 양의 극한 음극 (PIN) 모드 및 금속 - 반도체 - 금속 (MSM) 구조로 수행 된 광 검출기의 많은 유형이있다. 각 유형은 자신의 장점과 단점이 있습니다. 현재, MSM 광 검출기 구조로 인해 반응성, 신뢰성, 대응 및 복구 시간을 22 ~ 24에서의 뛰어난 성능에 집중 관심을 받고있다. 여기 제시된 결과들은 MSM 오믹 접촉 모드가 채용되었다는 것을 보여 주었다의 ZnO 박막을 기반으로 자외선 광 검출기를 제조한다. 이러한 광 검출기의 종류는 일반적으로 높은 C는 ZnO의 박막을 UV 광 검출기에 대한 적절한 감지 층시킴으로써 행한다 것을 나타내는, 양호한 응답 성 및 안정성을 보여준다.

<table border="0" cellpadding="0" cellspacing="0">
	<tbody>
		<tr>
			<td>RF power supply</td>
			<td>ADVANCED ENERGY</td>
			<td>RFX-600</td>
			<td></td>
		</tr>
		<tr>
			<td>Butterfly valve</td>
			<td>MKS</td>
			<td>253B-1-40-1</td>
			<td></td>
		</tr>
		<tr>
			<td>Mass flow conctroller</td>
			<td>PROTEC INSTRUMENTS</td>
			<td>PC-540</td>
			<td></td>
		</tr>
		<tr>
			<td>Pressure conctroller</td>
			<td>MKS</td>
			<td>600 series&#160;</td>
			<td></td>
		</tr>
		<tr>
			<td>Heater</td>
			<td>UPGRADE INSTRUMENT CO.</td>
			<td>UI-TC 3001</td>
			<td></td>
		</tr>
		<tr>
			<td>Sputter gun</td>
			<td>AJA INTERNATIONAL</td>
			<td>A320-HA</td>
			<td></td>
		</tr>
		<tr>
			<td>DEZn 1.5M</td>
			<td>ACROS ORGANIC USA, New Jersey</td>
			<td></td>
			<td>also called Diethylzinc (C2H5)2Zn</td>
		</tr>
		<tr>
			<td>Spin coater&#160;</td>
			<td>SWIENCO</td>
			<td>PW - 490</td>
			<td></td>
		</tr>
		<tr>
			<td>I-V measurement</td>
			<td>Keithley</td>
			<td>Model: 2400</td>
			<td></td>
		</tr>
		<tr>
			<td>Photocondutive measurement&#160;</td>
			<td>Home-built</td>
			<td></td>
			<td></td>
		</tr>
		<tr>
			<td>UV light sourse</td>
			<td>Panasonic</td>
			<td>ANUJ 6160</td>
			<td></td>
		</tr>
		<tr>
			<td>Mask aligner</td>
			<td>Karl Suss</td>
			<td>MJB4</td>
			<td></td>
		</tr>
		<tr>
			<td>Photoresist</td>
			<td>Shipley a Rohm &#38; Haas company</td>
			<td>S1813</td>
			<td></td>
		</tr>
		<tr>
			<td>Developer</td>
			<td>Shipley a Rohm &#38; Haas company</td>
			<td>MF319</td>
			<td></td>
		</tr>
		<tr>
			<td>Silicon wafer</td>
			<td>E-Light Technology Inc</td>
			<td>12/0801</td>
			<td></td>
		</tr>
		<tr>
			<td>Glass substrate</td>
			<td>CORNING</td>
			<td>1737</td>
			<td>P-type / Boron</td>
		</tr>
	</tbody>
</table>

synthesis and characterization of high c-axis zno thin film by plasma enhanced chemical vapor deposition system and its uv photodetector application

본 연구에서는 높은 C시킴으로써 행한다 (0002) 우선 배향과 산화 아연 (ZnO)을 박막을 성공적으로 그리고 효과적으로 플라즈마 강화 화학 기상 증착 (PECVD) 시스템을 사용하여 다른 합성 온도로 실리콘 (Si) 기판 상에 합성되어왔다. 다른 합성 된 결정 구조에 온도, 표면 모폴로지와 광학적 특성의 영향이 조사되었다. X 선 회절 (XRD) 패턴 (0002)의 회절 피크의 강도가 400까지 증가 O C. 합성 온도 강해져 지적 (0002) 피크의 회절 강도는 점차적으로 약하게 400 O C. 초과까지 합성 온도 (10-10) 회절 피크의 출현과 함께 수반 된 RT의 광 발광 (PL) 스펙트럼 방출은 약 375 nm 내지 약 575 nm의 싶게에 위치한 무시할 깊은 수준 (DL) 방출에서 관찰 강한 가까운 밴드 에지 (NBE)을​​ 전시어 높은 C가 된 ZnO를 박막을 이동시킴으로써 행한다. 전계 방출 주사 전자 현미경 (FE-SEM) 화상이 균일 한 표면 및 작은 입자 크기 분포를 보여. ZnO의 박막은 투과율을 측정하기위한 동일한 파라미터 하에서 유리 기판 상에 합성되어왔다. 자외선 (UV) 검출기 애플리케이션의 목적을 위해, 깍지 Pt로 박막 (두께 ~ 100 나노 미터)는 종래의 광학 리소그래피 공정 및 무선 주파수 (RF) 마그네트론 스퍼터링 법을 통해 제조. 옴 접촉을 달성하기 위해, 장치는 10 분 동안 급속 열처리 (RTA) 시스템에 의해 450 ℃로 아르곤 환경에서 어닐링 하였다. 체계적인 측정 한 후, 전류 - 전압 (I는 - V) 사진 및 암전류와 시간 의존 광전류 응답 결과 곡선은 높은 C는 ZnO의 박막이 적합 감지 층시킴으로써 행한다 것을 나타내는, 양호한 응답 성 및 안정성을 나타내자외선 광 검출기 응용 프로그램.

ZnO의 (0002) (C)와 높은 박막을 성공적으로 PECVD 시스템을 이용하여 실리콘 기판 상에 바람직한 방향을 합성 한 이동시킴으로써 행한다. 이산화탄소 (CO 2)와 디 에틸 아연 (DEZn)는 각각 산소와 아연 전구체로 사용 하였다. 된 ZnO 박막의 결정 구조의 ZnO 박막은 강한 (0002)의 회절 피크와 400 ℃로 합성 한 것을 나타내는, X 선 회절 (도 4)에 의해 특성화되었다. 합성 온도?...

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Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

합성 및 플라즈마에 의해 높은 c 축 된 ZnO 박막의 특성은 화학 기상 증착 시스템과 자외선 광 검출기 응용 프로그램 강화

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto ...

synthesis-characterization-high-c-axis-zno-thin-film-plasma-enhanced

Research

JoVE Journal

Engineering

15.1K 조회수.  National Taipei University of Technology (TAIPEI TECH). We offered a method to directly synthesize high c-axis (0002) ZnO thin film by plasma enhanced chemical vapor deposition. The as-synthesized ZnO thin film combined with Pt interdigitated electrode was used as sensing layer for ultraviolet photodetector, showing a high performance through a combination of its good responsivity and reliability.

비디오: Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.
The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.
To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 &mu;m thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint.
To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23&deg;C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.
Introduction
Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested.
Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10.
The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.

Polycrystalline silicon thin-film solar cells on glass are fabricated by deposition of boron and phosphorous doped silicon layers followed by crystallisation, defect passivation and metallisation. Plasmonic light-trapping is introduced by forming Ag nanoparticles on the silicon cell surface capped with a diffused reflector resulting in ~45% photocurrent enhancement.

Plasmonic 강화된 라이트 - 트래핑과 다결정 실리콘 박막 태양 전지

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

연구

공학

Encapsulation and Permeability Characteristics of Plasma Polymerized Hollow Particles

In this protocol, core-shell nanostructures are synthesized by plasma enhanced chemical vapor deposition. We produce an amorphous barrier by plasma polymerization of isopropanol on various solid substrates, including silica and potassium chloride. This versatile technique is used to treat nanoparticles and nanopowders with sizes ranging from 37 nm to 1 micron, by depositing films whose thickness can be anywhere from 1 nm to upwards of 100 nm. Dissolution of the core allows us to study the rate of permeation through the film. In these experiments, we determine the diffusion coefficient of KCl through the barrier film by coating KCL nanocrystals and subsequently monitoring the ionic conductivity of the coated particles suspended in water. The primary interest in this process is the encapsulation and delayed release of solutes. The thickness of the shell is one of the independent variables by which we control the rate of release. It has a strong effect on the rate of release, which increases from a six-hour release (shell thickness is 20 nm) to a long-term release over 30 days (shell thickness is 95 nm). The release profile shows a characteristic behavior: a fast release (35% of the final materials) during the first five minutes after the beginning of the dissolution, and a slower release till all of the core materials come out.

We have used plasma enhanced chemical vapor deposition to deposit thin films ranging from a few nm to several 100 nm on nano-sized particles of various materials. We subsequently etch the core material to produce hollow nanoshells whose permeability is controlled by the thickness of the shell. We characterize the permeability of these coatings to small solutes and demonstrate that these barriers can provide sustained release of the core material over several days.

플라즈마 Polymerized 빈 입자의 캡슐화 및 투과율 특성

In this protocol, core-shell nanostructures are synthesized by plasma enhanced chemical vapor deposition. We produce an amorphous barrier by plasma ...

Nanomoulding of Functional Materials, a Versatile Complementary Pattern Replication Method to Nanoimprinting

We describe a nanomoulding technique which allows low-cost nanoscale patterning of functional materials, materials stacks and full devices. Nanomoulding combined with layer transfer enables the replication of arbitrary surface patterns from a master structure onto the functional material. Nanomoulding can be performed on any nanoimprinting setup and can be applied to a wide range of materials and deposition processes. In particular we demonstrate the fabrication of patterned transparent zinc oxide electrodes for light trapping applications in solar cells.

We describe a nanomoulding technique which allows low-cost nanoscale patterning of functional materials, materials stacks and full devices. Nanomoulding can be performed on any nanoimprinting setup and can be applied to a wide range of materials and deposition processes.

기능성 재료 Nanomoulding, Nanoimprinting에 다목적 보완 패턴 복제 방법

We describe a nanomoulding technique which  allows low-cost nanoscale patterning of functional materials, materials stacks  and full devices. Nanomoulding ...

Synthesis and Microdiffraction at Extreme Pressures and Temperatures

High pressure compounds and polymorphs are investigated for a broad range of purposes such as determine structures and processes of deep planetary interiors, design materials with novel properties, understand the mechanical behavior of materials exposed to very high stresses as in explosions or impacts. Synthesis and structural analysis of materials at extreme conditions of pressure and temperature entails remarkable technical challenges. In the laser heated diamond anvil cell (LH-DAC), very high pressure is generated between the tips of two opposing diamond anvils forced against each other; focused infrared laser beams, shined through the diamonds, allow to reach very high temperatures on samples absorbing the laser radiation. When the LH-DAC is installed in a synchrotron beamline that provides extremely brilliant x-ray radiation, the structure of materials under extreme conditions can be probed in situ. LH-DAC samples, although very small, can show highly variable grain size, phase and chemical composition. In order to obtain the high resolution structural analysis and the most comprehensive characterization of a sample, we collect diffraction data in 2D grids and combine powder, single crystal and multigrain diffraction techniques. Representative results obtained in the synthesis of a new iron oxide, Fe4O5 1 will be shown.

The laser heated diamond anvil cell combined with synchrotron micro-diffraction techniques allows researchers to explore the nature and properties of new phases of matter at extreme pressure and temperature (PT) conditions. Heterogeneous samples can be characterized in situ under high pressure by 2D mapping and combined powder, single-crystal and multigrain diffraction approaches.

극단적 인 압력과 온도에서 합성 부위 회절

High pressure compounds and polymorphs are investigated for a broad range of purposes such as determine structures and processes of deep planetary ...

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent thermal evaporation, and it absorbs visible light strongly. However, for a long time the record power conversion efficiency of SnS solar cells remained below 2%. Recently we demonstrated new certified record efficiencies of 4.36% using SnS deposited by atomic layer deposition, and 3.88% using thermal evaporation. Here the fabrication procedure for these record solar cells is described, and the statistical distribution of the fabrication process is reported. The standard deviation of efficiency measured on a single substrate is typically over 0.5%. All steps including substrate selection and cleaning, Mo sputtering for the rear contact (cathode), SnS deposition, annealing, surface passivation, Zn(O,S) buffer layer selection and deposition, transparent conductor (anode) deposition, and metallization are described. On each substrate we fabricate 11 individual devices, each with active area 0.25 cm2. Further, a system for high throughput measurements of current-voltage curves under simulated solar light, and external quantum efficiency measurement with variable light bias is described. With this system we are able to measure full data sets on all 11 devices in an automated manner and in minimal time. These results illustrate the value of studying large sample sets, rather than focusing narrowly on the highest performing devices. Large data sets help us to distinguish and remedy individual loss mechanisms affecting our devices.

Tin sulfide (SnS) is a candidate material for Earth-abundant, non-toxic solar cells. Here, we demonstrate the fabrication procedure of the SnS solar cells employing atomic layer deposition, which yields 4.36% certified power conversion efficiency, and thermal evaporation which yields 3.88%.

열 증발 및 원자 층 증착에 의해 기록 효율 SNS 태양 전지 만들기

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent ...

Preparation of ZnO Nanorod/Graphene/ZnO Nanorod Epitaxial Double Heterostructure for Piezoelectrical Nanogenerator by Using Preheating Hydrothermal

Well-aligned ZnO nanostructures have been intensively studied over the last decade for remarkable physical properties and enormous applications. Here, we describe a one-step fabrication technique to synthesis freestanding ZnO nanorod/graphene/ZnO nanorod double heterostructure. The preparation of the double heterostructure is performed by using thermal chemical vapor deposition (CVD) and preheating hydrothermal technique. In addition, the morphological properties were characterized by using the scanning electron microscopy (SEM). The utility of freestanding double heterostructure is demonstrated by fabricating the piezoelectric nanogenerator. The electrical output is improved up to 200% compared to that of a single heterostructure owing to the coupling effect of the piezoelectricity between the arrays of ZnO nanorods on the top and bottom of graphene. This unique double heterostructure have a tremendous potential for applications of electrical and optoelectrical devices where the high number density and specific surface area of nanorod are needed, such as pressure sensor, immuno-biosensor and dye-sensitized solar cells.

One-step fabrication method for obtaining freestanding epitaxial double heterostructure is presented. This approach could achieve ZnO coverage with a higher number density than that of the epitaxial single heterostructure, leading to a piezoelectric nanogenerator with an increased output electrical performance.

예열 열수를 사용하여 Piezoelectrical 나노 발전기에 대한의 ZnO 나노 막대 / 그래 핀 / ZnO의 나노로드 에피 택셜 더블 헤테로 구조의 제조

Well-aligned ZnO nanostructures have been intensively studied over the last decade for remarkable physical properties and enormous applications. Here, we ...

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for Cu(In,Ga)Se2 Solar Cells

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction of degradation mechanisms and prevention of module field failure can consequently decrease investment risks as well as increase the electricity yield. An improved knowledge level can for these reasons significantly decrease the total costs of PV electricity. 
In order to better understand and minimize the degradation of PV modules, the occurring degradation mechanisms and conditions should be identified. This should preferably happen under combined stresses, since modules in the field are also simultaneously exposed to multiple stress factors. Therefore, two 'Combined Stress test with in situ measurement' setups have been designed and constructed. These setups allow the simultaneous use of humidity, temperature, illumination, and electrical biases as independently controlled stress factors on solar cells and minimodules. The setups also allow real-time monitoring of the electrical properties of these samples. This protocol presents these setups and describes the experimental possibilities. Moreover, results obtained with these setups are also presented: various examples about the influence of both deposition and degradation conditions on the stability of thin film Cu(In,Ga)Se2 (CIGS) as well as Cu2ZnSnSe4 (CZTS) solar cells are described. Results on the temperature dependency of CIGS solar cells are also presented.

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells

Two &#39;Combined Stress test with in situ measurement&#39; setups, which allow real-time monitoring of accelerated degradation of solar cells and modules, were designed and constructed. These setups allow the simultaneous use of humidity, temperature, electrical biases, and illumination as independently controlled stress factors. The setups and various experiments executed are presented.

제자리에서 태양 전지 및 모듈의 가속된 성능 저하의 모니터링: Cu (In, Ga) Se2 태양 전지에 대 한 사례 연구

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction ...

Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule (SMPV1) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM), by utilizing ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The inverted SMPV1:PC71BM solar cells with ZnO NRs that grew on both a sputtered and sol-gel processed AZO seed layer are fabricated. Compared with the AZO thin film prepared by the sol-gel method, the sputtered AZO thin film exhibits better crystallization and lower surface roughness, according to X-ray diffraction (XRD) and atomic force microscope (AFM) measurements. The orientation of the ZnO NRs grown on a sputtered AZO seed layer shows better vertical alignment, which is beneficial for the deposition of the subsequent active layer, forming better surface morphologies. Generally, the surface morphology of the active layer mainly dominates the fill factor (FF) of the devices. Consequently, the well-aligned ZnO NRs can be used to improve the carrier collection of the active layer and to increase the FF of the solar cells. Moreover, as an anti-reflection structure, it can also be utilized to enhance the light harvesting of the absorption layer, with the power conversion efficiency (PCE) of solar cells reaching 6.01%, higher than the sol-gel based solar cells with an efficiency of 4.74%.

This manuscript describes how to design and fabricate efficient inverted SMPV1:PC71BM solar cells with ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The well-aligned vertically oriented ZnO NRs exhibit high crystalline properties. The power conversion efficiency of solar cells can reach 6.01%.

잘 정렬 된 수직 지향 ZnO Nanorod 배열 및 그들의 응용 프로그램에서 반전 된 작은 분자 태양 전지

This manuscript describes how to design and fabricate efficient inverted solar cells, which are based on a two-dimensional conjugated small molecule ...

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.&#160; We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.&#160; Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

We present a detailed method for fabricating ultra-thin color films with improved characteristics for optical coatings. The oblique angle deposition technique using an electron beam evaporator allows improved color tunability and purity. Fabricated films of Ge and Au on Si substrates were analyzed by reflectance measurements and color information conversion.

기울기 각도 증 착을 사용 하 여 미디어를 흡수 하는 높은 가진 매우 얇은 필름의 제조

Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.&#160; We present ...

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (Cu variant) entropy-stabilized oxides. Phase pure and chemically homogeneous (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (x = 0.20, 0.27, 0.33) and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O (x = 0.11, 0.27) ceramic pellets are synthesized and used in the deposition of ultra-high quality, phase pure, single crystalline thin films of the target stoichiometry. A detailed methodology for the deposition of smooth, chemically homogeneous, entropy-stabilized oxide thin films by pulsed laser deposition on (001)-oriented MgO substrates is described. The phase and crystallinity of bulk and thin film materials are confirmed using X-ray diffraction. Composition and chemical homogeneity are confirmed by X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy. The surface topography of thin films is measured with scanning probe microscopy. The synthesis of high quality, single crystalline, entropy-stabilized oxide thin films enables the study of interface, size, strain, and disorder effects on the properties in this new class of highly disordered oxide materials.

The synthesis of high quality bulk and thin film (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O and (Mg0.25(1-x)Co0.25(1-x)Ni0.25(1-x)CuxZn0.25(1-x))O entropy-stabilized oxides is presented.

Here, we present a procedure for the synthesis of bulk and thin film multicomponent (Mg0.25(1-x)CoxNi0.25(1-x)Cu0.25(1-x)Zn0.25(1-x))O (Co variant) and ...