The authors thank New Energy and Industrial Technology Development Organization (NEDO) under Ministry of Economy, Trade, and Industry (METI), Japan, for the financial support.

PDMS 스탬프 1. 준비 <ol><li> 폴리 테트라 플루오로 에틸렌 (PTFE) 용기 : 나노 홀 금형 (50mm × 50mm nanoimprinted 시클로 올레핀 폴리머 플라스틱 필름, 크기)를 설정합니다. </li><li> 및 2,4- (일회용 폴리 프로필렌 팁 디지털 마이크로 피펫을 사용하여, 6 μl를) 일회용 유리 병에 비닐 메틸 실록산 - 디메틸 실록산 공중 합체 (50mm × 50mm의 금형 0.76 g)을 달아 PT-디 비닐 테트라 메틸 디 실록산 복합체를 혼합, (일회용 폴리 프로필렌 팁 디지털 마이크로 피펫을 사용하여 24 μL) 6,8- 디 tetramethyltetra - vinylcyclotetrasiloxane. </li><li> (0.24 ml의 일회용 폴리 프로필렌 팁 디지털 마이크로 피펫 사용) 메틸 하이드로 - 디메틸 실록산 공중 합체를 추가 유리 병을 신속 일회용 유리 피펫을 사용하여 섞는다. PTFE 용기에 설정된 몰드의 표면은 N (2)에 의해 취입 된 후, 몰드에 생성 된 혼합물 ( &quot;하드&quot;PDMS의 예비 중합체)을 부어 스핀 코트를 시작할40 초 동안 1,000 rpm에서 보내고 것은 ~ 40 μm의의 층 두께를 달성했다. </li><li> 30 분 간단히 가교 하드 PDMS를하기 위해서는 65 ℃에서 예열 고온 챔버에서 스핀 코팅 샘플을 놓습니다. </li><li> 가열하는 동안, 실리콘 (6 g)을 무게 일회용 유리 병에 촉매 (0.6 g)을 함께 섞는다. 진공 데시 케이 터에서 유리 병을 놓고 실리콘 혼합물 ( &quot;소프트&quot;PDMS의 예비 중합체)에 포집 된 공기를 제거하기 위해 15 분 동안 진공 (~ 133 파)를 적용한다. </li><li> 각각 가열 챔버 진공 건조기에서 금형 및 부드러운 PDMS 예비 중합체를 꺼내, 빨리 가열 된 금형에 예비 소프트 PDMS를 붓는다. 소프트 PDMS 층의 두께는 2 ~ 3 mm이다. </li><li> 적어도 1 시간 동안 ~ 133 펜실베니아 더 탈 다시 진공 건조기의 결과 샘플을 놓습니다. </li><li> 상기 가열 챔버에 이동시켜 샘플을 탈기하고 80 ° C (~ 3 ℃ / min의 가열 속도)까지 서서히 가열 시작. 5 시간 동안이 온도를 유지하드와 소프트 PDMS 완전히 크로스 링크. </li><li> RT까지 시료를 냉각 한 후, PDMS를 몰드로부터 조심스럽게 박리 스탬프. 필요한 경우, 제 (또는 그 이상)의 우표를 준비하는 몰드를 재사용. 참고 : 동일한 금형 스탬프 품질의 저하없이 5 배 이상을 사용할 수있다. </li><li> 칼을 사용하여 원하는 크기의 조각 (우리의 태양 전지 일반적으로 7mm × 7mm)로 생성 된 나노 기둥 스탬프 (더블 레이어 소프트 / 하드 PDMS 복합) (27)를 잘라 사용할 때까지 공기 아래에 저장합니다. </li></ol> 블록 공중 합체 솔루션 2. 준비 <ol><li> (B의 PS- -P2VP / O 크실렌) 유리 병에 폴리스타이렌 블록 - 폴리 -2- 비닐 피리딘 (PS- B 형 -P2VP)의 분말을 달아 3 ㎎ / ㎖의 비율로 오 크실렌과 섞어 . </li><li> 1 시간 동안 70 ° C에서 PTFE 코팅 된 자석 교반 막대를 사용하여 혼합물을 교반 하였다. </li><li> 교반없이 실온에서 이상 24 시간 동안 생성 된 용액을 계속링은 자기 조립 미셀의 형성을 완료합니다. 단단히 솔루션을 밀봉 및 주위 조건에서 보관합니다. 참고 :이 솔루션의 품질도 일년 준비 후 변경되지 않습니다. </li></ol> μ - 네 3. 준비 : H 기질 <ol><li> F (나타내고 유리 /에 SnO2 : F, 이하) 워시 안경의 SnO2 덮여 초음파 욕을 사용하여 실온에서 H 2 O (500 mL)로, 세제 (500 ㎖) 및 H 2 O (500 ml) 중 (15 각 분). N 2를 불어를 건조. </li><li> 세정 된 유리를로드 / SnO2와 기판 홀더 및 예금의 ZnO 기판에서 F : 가인 (20 ㎚), 표 2에 명시된 조건을 가진 직류 (DC) 스퍼터링 시스템을 사용. </li><li> 유리를로드 / 산화 주석 2 : F / ZnO의 : 플라즈마 화학을 사용하여 시간 P (10 ㎚), I (500 ㎚), n은 (40 ㎚) 층 : 다른 기판 홀더 및 예금 μ - 네에서 조지아 기판 VAPOR 증착 표 2에 명시된 조건 (PECVD) 시스템. </li><li> 결과 μ - 네 보관 : H를 (유리 / 산화 주석 2 : F / ZnO의 : 조지아 / μ - 네 : H의 P - I - n)은 전사 인쇄 단계까지 진공 또는 N (2)에서 기판. </li></ol> PDMS 스탬프의 4 AG-코팅 <ol><li> N 2를 불어 EtOH로 (1 단계에서 준비) PDMS 스탬프 (30 ml)을 15 분 동안 초음파 목욕을 사용하여 건조를 씻으십시오. </li><li> 증착 률 = 50-10 Å / 초, 압력 : 전자선 다음 조건 (EB) 증착 시스템을 사용의 Ag 막 (10 ~ 80 nm의)을 양면 접착 테이프를 사용하여 샘​​플 홀더에 세정 PDMS 스탬프를 넣고 석출 = ~ 1.5 × 10 -4 아빠. </li><li> EB 증발 시스템에서의 Ag 코팅 된 우표를 가지고 다음과 같은 전사 인쇄 단계에서 즉시 사용합니다. </li></ol> 얇은 -에의 Ag Nanodisks 5. 전송 ​​인쇄필름 실리콘 표면 <ol><li> 5,000 (일회용 폴리 프로필렌 팁 디지털 마이크로 피펫을 사용하여, 50mm × 50mm의 샘플 0.3 ㎖)시는 PS- B 형 -P2VP 솔루션을 진공 또는 N 2, 스핀 코트에 저장, 기판들은 박막을 꺼내 40 초 동안 회전. </li><li> EtOH로는 디지털 마이크로 피펫 (5 μm의 / 셀 면적)을 사용하여 함께 PS- B 형 -P2VP 코팅 표면을 적시고 AG-PDMS 코팅이 EtOH를 습윤면에 적용 부드럽게 스탬프. 스탬프를 누르지 마십시오. </li><li> 진공 챔버 내에서 스탬프 박막 Si 기판을 넣고 적용 진공 (~ 133 PA). </li><li> 5 분 후, 공기를 진공 챔버를 채우고 박막 Si 기판을 꺼내. </li><li> 의 Ag nanodisks 인쇄를 전송하는 핀셋으로 스탬프의 양쪽을 잡고 박막 Si 기판에서 스탬프를 제거합니다. 참고 : 성공하면, 스탬핑의 추적이 녹색 지점으로 볼 수 있습니다. </li><li> 잇의 연속적인 흐름으로 전사 인쇄 박막 Si 기판 린스OH N 2 부는 15 초 (~ 30 ㎖) 및 건조합니다. </li><li> Ar 플라즈마 시스템을 이용하여 PS-B-P2VP 코팅을 제거한다. <ol><li> Ar 플라즈마 시스템의 처리 챔버에서 전사 인쇄 박막 Si 기판을 배치했다. </li><li> ~ 5 분 (압력 20 ~ PA)에 대한 프로세스 챔버에 공기를 펌프. </li><li> Ar 가스 라인의 밸브를 열고 수동 4 SCCM까지의 유량을 조정한다. (40) 아빠에 압력을 안정시키기 위해 5 ~에 대한 분을 기다립니다. </li><li> 108 초 동안 Ar 플라즈마를 생성한다. </li><li> 플라즈마 세정, 전사 인쇄 박막의 Si 기판을 취출 처리 챔버에 공기를, Ar 가스 라인의 밸브를 닫고 펌프 중지 채운다. </li></ol></li></ol> 박막 Si 태양 전지 제조 6. 완료 <ol><li> Si를 폴리이 미드 테이프를 이용하여 Ar 플라즈마 처리 후의 기판들 전사 인쇄 박막에 금속 마스크를 부착. </li><li> DC 스퍼터링 시스템 및 deposi의 기판 홀더에 기판을 마스킹로드t의 ZnO : 조지아 (100 ㎚), AG (250 ㎚), 및 ZnO의 : 가인 표 2에 명시된 조건 (40 ㎚)을 순차적. </li><li> 기판으로부터 금속 마스크를 분리하고 마스크 박막의 Si 층을 제거 (즉, 영역의 ZnO : Ga 및의 Ag가 증착되지 않은) 반응성 이온 에칭 (RIE)을 이용하여 시스템. <ol><li> RIE 시스템의 처리 챔버에서 샘플을 놓는다. </li><li> 제조업체의 지침에 따라 공정 챔버에서 공기를 펌프. </li><li> SF 6 / O 2 유량 = 20분의 100 SCCM, 압력 = 20 (PA) 전력 100 W, 시간 = 20 초 1 분 : 제조업체의 지시에 따라 다음과 같은 공정 조건을 설정한다. </li><li> , SF 6 및 O 2 가스 라인을 열고 압력을 안정화하고, 플라즈마를 생성합니다. </li><li> 샘플을 꺼내 공정 챔버로 N 2, SF 6 및 O 2 가스 라인의 밸브를 닫습니다 펌핑 중지하고 입력합니다. </li></ol></li><li> 넣어진공 열처리 챔버의 샘플 및 진공 (~ 133 PA)에서 175 ° C까지 서서히 가열 시작합니다. 2 시간 동안이 온도를 유지 한 다음 실온으로 냉각 할 수 있습니다. 챔버에 공기를 채우고 이제 세포를 호출 할 수있는 샘플을 꺼내. </li><li> 전면 투명 전극 상에 땜납의 Sn-Zn 계 합금 (유리 /에 SnO2 : F / 된 ZnO : 조지아, RIE 처리에 의해 노출 된 부분) 초음파 납땜 장치를 사용. </li></ol> 외부 양자 효율 7. 측정 (EQE) <ol><li> 폴리이 미드 테이프를 이용하여 제작 한 전지에 차광 마스크를 부착하고 셀 홀더 마스크 셀을 설정한다. (-) 조지아 전극 : 다시 전면 납땜 전극 (+)과의 Ag / ZnO의에 프로브를 연결합니다. </li><li> 파장 범위에 각각 300-1,100, 5㎚의 단계로 제조사의 지침에 따라 EQE 측정 시스템을 사용 EQE 스펙트럼을 측정한다. </li></ol> 태양 광 전류 - 전압 (JV) 8. 측정 문자istics <ol><li> 비정질 실리콘 레퍼런스 셀을 사용 JV 특성 측정 시스템의 광 강도를 보정. <ol><li> JV 특성 측정 시스템의 셀 홀더에 비정질 실리콘 기준 셀을 설정하고, 빛을 밝히는. </li><li> JV 특성 측정 시스템에 장착 된 디지털 멀티 미터를 사용하여 photogenerated 전류를 읽어보십시오. photogenerated 전류가 기준 셀 (8.34 mA / ㎠)에 대한 올바른 값이 표시 될 때까지 빛의 강도를 조절합니다. </li></ol></li><li> 셀 차광 마스크를 부착하고 셀 홀더 마스크 셀 세트. (-) 조지아 전극 : 다시 전면 납땜 전극 (+)과의 Ag / ZnO의에 프로브를 연결합니다. </li><li> 셀 교정 라이트 ​​(100 mW의 / cm 2, 1 일)을 조명하고 V. 0.02의 승압하여 제조사의 지침에 따라 JV 특성 측정 시스템을 이용하여 전류를 측정 photogenerated </li></ol>

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A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Interfacial+Chemistries+for+Nanoscale+Transfer+Printing.">Interfacial Chemistries for Nanoscale Transfer Printing.</a> J. Am. Chem. Soc. 124, 7654-7655 (2002).</li><li>Hylton, N. P., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Loss+mitigation+in+plasmonic+solar+cells:+aluminium+nanoparticles+for+broadband+photocurrent+enhancements+in+GaAs+photodiodes.">Loss mitigation in plasmonic solar cells: aluminium nanoparticles for broadband photocurrent enhancements in GaAs photodiodes.</a> Sci. 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The authors have nothing to disclose.

이 글에서, 2 층 하드 / 소프트 PDMS 복합은 스탬프 재료로 사용 하였다. (27)이 조합은 정확하게 직경 육각형 근접 포장 둥근 구멍의 배열이었다 금형에 부모 나노 구조를 복제하는 데 필수적인 것으로 밝혀졌다 230 나노 미터, 500 나노 미터의 깊이, 및 460 nm의 홀 중심 간 간격. 전용 소프트 PDMS 사용한 경우, 스탬프는 항상 제대로 나노 구조 표면의 결과 (예를 들어, 역전 필러 구조 없음 날카로...

기술 분야의 광범위한 기능적 나노 구조물의 적용에 대한 수요가 오랫동안있어왔다. 이러한 추세에 대한 기대 중 하나는 개선이나 혁신 성과로 이어지는 장치 아키텍처의 새로운 디자인을 열 수 있습니다. 태양 전지의 분야에서는, 예를 들면, 금속 나노 구조의 사용은 적극적 인해 흥미로운 광 (즉, 플라즈몬) 특성, 유효 광 트래핑 시스템을 구축 한 잠재적 이로운의 탐구되었다. 2,3- 실제로, 이론적 연구 4 -6 이러한 플라즈몬 광 트래핑 태양 전지와 원하는 금속 나노 구조물을 통합 전략을 개발하고, 종래의 광선 광학 기 (텍스쳐)이 결과로 광 포획 한도. 7 기반 초과하는 효과를 얻을 수 있다는 제안이 실현하기 위해 갈수록 중요 해지고있다 이론적 인 예측. 전략의 숫자는이이 과제를 해결하기 위해 제안되었다. 8-24를 이들은 예컨대, 단순한 (저비용) 금속 막 8,9 또는 전 합성 된 금속 나노 입자 분산액의 열 어닐링을위한 10,11 둘 모두가 성공적으로 시연 귀착 포함 플라즈몬 빛 트래핑. 그러나, 이러한 방법에 의해 제조 된 금속 나노 구조는 일반적으로 이론적 모델과 일치하도록 도전 것을 지적한다. 대조적으로, 포토 리소그래피 및 전자빔 리소그래피와 같은 반도체 산업에서 전통적인 나노 기술을, 12, 13이 아니라 서브 100 나노 레벨 이하의 구조를 제어 할 수 있지만, 그들은 종종 너무 고가이다 태양 전지에 적용하는 데 시간이 걸리는, 여기서, 저가로 대 면적 능력이 필수적이다. 낮은 비용, 높은 처리량, 그리고 나노 제어와 대 면적 요건, 이러한 나노 임프린트 리소그래피, 소프트 리소그래피 14-16, 17, 18 등의 방법을 이행하기 위해서 </sup&gt; 나노 구체 리소그래피, 19 ~ 21 홀 마스크 콜로이드 리소그래피 22-24 유망 할 것이다. 이러한 선택 중에서, 우리는 소프트 리소그래피, 고급 전사 인쇄 기술을 개발했다. 25 나노 폴리 (디메틸 실록산) (PDMS) 스탬프 및 블록 공중합 체계 접착제 층을 사용하여, 정렬 된 금속 나노 구조의 패터닝은 용이 기술적의 수를 달성 할 수 있었다 태양 전지에 대한 것들을 포함 관련 물질. 이 기사의 초점은 태양 전지 구조를 기존에 효과적인 빛 트래핑 플라즈 모닉 나노 구조를 통합하는 우리의 전사 인쇄 방식의 세부 절차를 설명하는 것입니다. 금속 및 태양 전지의 다른 유형이 방법과 호환 있지만 태양 전지는 본 연구에서 선별 하였다 (도 1), 26 : 예시적인 경우로서,의 Ag nanodisks 및 박막은 미결정 실리콘 (H μC-시)를 수소화. 함께 그 과정단순, 접근 방식은 장치와 기능 금속 나노 구조를 통합 할 수있는 편리한 도구 등 다양한 연구자들에게 관심이 될 것입니다.

<table border="0" cellpadding="0" cellspacing="0" style="width:864px;" width="863">
	<colgroup>
		<col />
		<col />
		<col />
		<col />
	</colgroup>
	<tbody>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Nanohole mold</td>
			<td style="width:200px;">Scivax 
			http://www.scivax.com</td>
			<td style="width:129px;">FLH230/500-120</td>
			<td style="width:319px;"></td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">PTFE container</td>
			<td style="width:200px;">Eishin 
			http://www.colbyeishin.com</td>
			<td style="width:129px;">n/a</td>
			<td style="width:319px;">Custom made</td>
		</tr>
		<tr height="21">
			<td height="63" rowspan="3" style="height:63px;width:216px;">Hard-PDMS materials</td>
			<td rowspan="3" style="width:200px;">Gelest 
			http://www.gelest.com/gelest/forms/Home/home.aspx</td>
			<td style="width:129px;">VDT-731</td>
			<td>Vinylmethylsiloxane-dimethylsiloxane copolymer</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:129px;">SIP6831.1</td>
			<td>Pt-divinyltetramethyldisiloxane complex</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:129px;">HMS-301</td>
			<td>Methylhydrosiloxane-dimethylsiloxane copolymer</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">2,4,6,8-tetramethyltetra-vinylcyclotetrasiloxane</td>
			<td style="width:200px;">Sigma-Aldrich 
			http://www.sigmaaldrich.com</td>
			<td style="width:129px;">396281</td>
			<td>Additive for hard-PDMS</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Soft-PDMS materials</td>
			<td style="width:200px;">Dow Corning 
			http://www.dowcorning.com</td>
			<td style="width:129px;">Sylgard-184</td>
			<td>Silicone precursor</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;">PS-b-P2VP</td>
			<td style="width:200px;">Polymer Source 
			http://polymersource.com</td>
			<td style="width:129px;">P5742-S2VP</td>
			<td>Mn &#215; 103 = 133-b-132</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Glass/SnO2:F substrates</td>
			<td style="width:200px;">Asahi Glass Co. Ltd. 
			http://www.agc.com/english/company</td>
			<td style="width:129px;">Type VU</td>
			<td style="width:319px;">Chemical mechanical polished by D-process Inc. (http://d-process.jp/index.html) to flatten the surfaces</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Detergent</td>
			<td style="width:200px;">Fruuchi Chemical Co. 
			http://www.furuchi.co.jp/eng/main.htm</td>
			<td style="width:129px;">Semico-clean 56</td>
			<td style="width:319px;">Used for the cleaning of Glass/SnO2:F substrates</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">ZnO:Ga supputtering target</td>
			<td style="width:200px;">AGC Ceramics Co. Ltd. 
			http://www.agcc.jp/2005/en/index.html</td>
			<td style="width:129px;">5.7GZO</td>
			<td></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Ag supputtering target</td>
			<td style="width:200px;">Mitsubishi Materials Co. 
			http://www.mitsubishicarbide.com/mmc/en/index.html</td>
			<td style="width:129px;">4NAg</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="84" style="height:84px;width:216px;">Double-sided adhesive tape</td>
			<td style="width:200px;">Nisshin EM Co. 
			http://nisshin-em.co.jp/information/carbontape.html</td>
			<td style="width:129px;">732</td>
			<td></td>
		</tr>
		<tr height="120">
			<td height="120" style="height:120px;width:216px;">Polyimide tape</td>
			<td style="width:200px;">Dupont 
			http://www.dupont.com/products-and-services/membranes-films/polyimide-films/brands/kapton-polyimide-film.html</td>
			<td style="width:129px;">Kapton 650S#25</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="84" style="height:84px;width:216px;">Sn-Zn-based Solder</td>
			<td style="width:200px;">Kuroda Techno Co., Ltd. 
			http://www.kuroda-techno.com/english/index.html</td>
			<td style="width:129px;">Cerasolzer AL-200</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="84" style="height:84px;width:216px;">Digital micro pipette</td>
			<td style="width:200px;">Nichiryo 
			http://www.nichiryo.co.jp/en/product/pipette/ex/index.html</td>
			<td style="width:129px;">00-NPX2-20 
			00-NPX2-200 
			00-NPX2-1000</td>
			<td></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Heating chamber</td>
			<td style="width:200px;">Tokyo Rikakikai Co., Ltd. 
			http://www.eyelaworld.com/product_view.php?id=120</td>
			<td style="width:129px;">VOS-201SD</td>
			<td></td>
		</tr>
		<tr height="84">
			<td height="126" rowspan="2" style="height:126px;width:216px;">Electron beam evaporator 
			(two types)</td>
			<td style="width:200px;">Canon-Anelva 
			https://www.canon-anelva.co.jp/english/index.html</td>
			<td style="width:129px;">n/a</td>
			<td style="width:319px;">Custom made</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:200px;">Arios 
			http://arios.com/</td>
			<td style="width:129px;">n/a</td>
			<td>Custom made</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Sputtering system</td>
			<td style="width:200px;">Ulvac 
			http://www.ulvac.co.jp/en</td>
			<td style="width:129px;">SBR-2306</td>
			<td style="width:319px;"></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">PECVD system&#160;</td>
			<td style="width:200px;">Shimadzu Emit Co. Ltd. 
			http://www.shimadzu.co.jp/emit/en/</td>
			<td style="width:129px;">SLCM-13</td>
			<td style="width:319px;"></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Ar plasma system&#160;</td>
			<td style="width:200px;">Diner Electric Gmbh 
			http://www.plasma.de/index.html</td>
			<td style="width:129px;">Femto&#160;</td>
			<td></td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">RIE system</td>
			<td style="width:200px;">Samco Inc. 
			http://www.samcointl.com</td>
			<td style="width:129px;">RIE-10NR</td>
			<td></td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">Ultrasonic soldering device</td>
			<td style="width:200px;">Colby-Eishin Enterprises, Inc. 
			http://www.colbyeishin.com/sub_sunbonder.htm</td>
			<td style="width:129px;">SUNBONDER</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">EQE measurement system</td>
			<td rowspan="3" style="width:200px;">Bunkoukeiki Co. Ltd. 
			http://www.bunkoukeiki.co.jp/</td>
			<td style="width:129px;">CEP-25BXS</td>
			<td></td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">J-V characteristics measurement system</td>
			<td style="width:129px;">OTENTOSUN-5S-I/V</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Amorphous Si reference cell</td>
			<td style="width:129px;">WPVS-NPB-S1</td>
			<td>For light intensity calibration</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Digital multi-meter</td>
			<td style="width:200px;">Keithley Instruments Inc. 
			http://www.keithley.com/</td>
			<td style="width:129px;">2400</td>
			<td></td>
		</tr>
	</tbody>
</table>

integration of light trapping silver nanostructures in hydrogenated microcrystalline silicon solar cells by transfer printing

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly known as plasmonic effects, play an important role. Research in this field has, however, been impeded owing to the difficulty of fabricating devices containing the desired functional metal nanostructures. In order to provide a viable strategy to this issue, we herein show a transfer printing-based approach that allows the quick and low-cost integration of designed metal nanostructures with a variety of device architectures, including solar cells. Nanopillar poly(dimethylsiloxane) (PDMS) stamps were fabricated from a commercially available nanohole plastic film as a master mold. On this nanopatterned PDMS stamps, Ag films were deposited, which were then transfer-printed onto block copolymer (binding layer)-coated hydrogenated microcrystalline Si (&#181;c-Si:H) surface to afford ordered Ag nanodisk structures. It was confirmed that the resulting Ag nanodisk-incorporated &#181;c-Si:H solar cells show higher performances compared to a cell without the transfer-printed Ag nanodisks, thanks to plasmonic light trapping effect derived from the Ag nanodisks. Because of the simplicity and versatility, further device application would also be feasible thorough this approach.

H (N 층) :도 2는 μC-Si를 표면의 Ag nanodisks의 전사 인쇄를위한 일반적인 방법을 설명합니다. 간략하게,의 Ag 막 (두께 : 10 ~ 80 nm의)은 제 전자빔 증착법에 의해 나노 기둥 PDMS 스탬프의 표면 상에 증착된다. H의 N 층 : 평행, PS- B 형 -P2VP 용액을 새로 제조 μC-Si를 표면 상에 스핀 코팅된다. 이어서,의 EtOH 액 PS- B 형 -P2VP 코팅 표면 상에 배치되고, AG-증착 PDMS 스탬프를...

Watch this Scientific Journal Video about Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing at JoVE.com

Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

A viable transfer printing-based methodology to introduce plasmonic metal nanostructures in solar cells is described. Using nanopillar poly(dimethylsiloxane) stamps, an Ag-based ordered nanodisk array was integrated with standard hydrogenated microcrystalline Si solar cells, which led to improved device performances due to plasmonic light trapping.

전송 인쇄하여 수소 첨가 미세 결정 실리콘 태양 전지에 빛 트래핑 실버 나노 구조의 통합

One of the potential applications of metal nanostructures is light trapping in solar cells, where unique optical properties of nanosized metals, commonly ...

integration-light-trapping-silver-nanostructures-hydrogenated

Research

JoVE Journal

Engineering

7.7K 조회수.  National Institute of Advanced Industrial Science and Technology, Koriyama, Fukushima, Japan. A viable transfer printing-based methodology to introduce plasmonic metal nanostructures in solar cells is described. Using nanopillar poly(dimethylsiloxane) stamps, an Ag-based ordered nanodisk array was integrated with standard hydrogenated microcrystalline Si solar cells, which led to improved device performances due to plasmonic light trapping.

비디오: Integration of Light Trapping Silver Nanostructures in Hydrogenated Microcrystalline Silicon Solar Cells by Transfer Printing

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach.
The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles.
To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 &mu;m thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm2, which can be increased up to 17-18 mA/cm2 (~25% higher) after application of a simple diffuse back reflector made of a white paint.
To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23&deg;C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing conditions. An optimised nanoparticle array alone results in cell Jsc enhancement of about 28%, similar to the effect of the diffuse reflector. The photocurrent can be further increased by coating the nanoparticles by a low refractive index dielectric, like MgF2, and applying the diffused reflector. The complete plasmonic cell structure comprises the polycrystalline silicon film, a silver nanoparticle array, a layer of MgF2, and a diffuse reflector. The Jsc for such cell is 21-23 mA/cm2, up to 45% higher than Jsc of the original cell without light-trapping or ~25% higher than Jsc for the cell with the diffuse reflector only.
Introduction
Light-trapping in silicon solar cells is commonly achieved via light scattering at textured interfaces. Scattered light travels through a cell at oblique angles for a longer distance and when such angles exceed the critical angle at the cell interfaces the light is permanently trapped in the cell by total internal reflection (Animation 1: Light-trapping). Although this scheme works well for most solar cells, there are developing technologies where ultra-thin Si layers are produced planar (e.g. layer-transfer technologies and epitaxial c-Si layers) 1 and or when such layers are not compatible with textures substrates (e.g. evaporated silicon) 2. For such originally planar Si layer alternative light trapping approaches, such as diffuse white paint reflector 3, silicon plasma texturing 4 or high refractive index nanoparticle reflector 5 have been suggested.
Metal nanoparticles can effectively scatter incident light into a higher refractive index material, like silicon, due to the surface plasmon resonance effect 6. They also can be easily formed on the planar silicon cell surface thus offering a light-trapping approach alternative to texturing. For a nanoparticle located at the air-silicon interface the scattered light fraction coupled into silicon exceeds 95% and a large faction of that light is scattered at angles above critical providing nearly ideal light-trapping condition (Animation 2: Plasmons on NP). The resonance can be tuned to the wavelength region, which is most important for a particular cell material and design, by varying the nanoparticle average size, surface coverage and local dielectric environment 6,7. Theoretical design principles of plasmonic nanoparticle solar cells have been suggested 8. In practice, Ag nanoparticle array is an ideal light-trapping partner for poly-Si thin-film solar cells because most of these design principle are naturally met. The simplest way of forming nanoparticles by thermal annealing of a thin precursor Ag film results in a random array with a relatively wide size and shape distribution, which is particularly suitable for light-trapping because such an array has a wide resonance peak, covering the wavelength range of 700-900 nm, important for poly-Si solar cell performance. The nanoparticle array can only be located on the rear poly-Si cell surface thus avoiding destructive interference between incident and scattered light which occurs for front-located nanoparticles 9. Moreover, poly-Si thin-film cells do not requires a passivating layer and the flat base-shaped nanoparticles (that naturally result from thermal annealing of a metal film) can be directly placed on silicon further increases plasmonic scattering efficiency due to surface plasmon-polariton resonance 10.
The cell with the plasmonic nanoparticle array as described above can have a photocurrent about 28% higher than the original cell. However, the array still transmits a significant amount of light which escapes through the rear of the cell and does not contribute into the current. This loss can be mitigated by adding a rear reflector to allow catching transmitted light and re-directing it back to the cell. Providing sufficient distance between the reflector and the nanoparticles (a few hundred nanometers) the reflected light will then experience one more plasmonic scattering event while passing through the nanoparticle array on re-entering the cell and the reflector itself can be made diffuse - both effects further facilitating light scattering and hence light-trapping. Importantly, the Ag nanoparticles have to be encapsulated with an inert and low refractive index dielectric, like MgF2 or SiO2, from the rear reflector to avoid mechanical and chemical damage 7. Low refractive index for this cladding layer is required to maintain a high coupling fraction into silicon and larger scattering angles, which are ensured by the high optical contrast between the media on both sides of the nanoparticle, silicon and dielectric 6. The photocurrent of the plasmonic cell with the diffuse rear reflector can be up to 45% higher than the current of the original cell or up to 25% higher than the current of an equivalent cell with the diffuse reflector only.

Polycrystalline silicon thin-film solar cells on glass are fabricated by deposition of boron and phosphorous doped silicon layers followed by crystallisation, defect passivation and metallisation. Plasmonic light-trapping is introduced by forming Ag nanoparticles on the silicon cell surface capped with a diffused reflector resulting in ~45% photocurrent enhancement.

Plasmonic 강화된 라이트 - 트래핑과 다결정 실리콘 박막 태양 전지

One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To ...

연구

공학

A Method to Fabricate Disconnected Silver Nanostructures in 3D

The standard nanofabrication toolkit includes techniques primarily aimed at creating 2D patterns in dielectric media. Creating metal patterns on a submicron scale requires a combination of nanofabrication tools and several material processing steps. For example, steps to create planar metal structures using ultraviolet photolithography and electron-beam lithography can include sample exposure, sample development, metal deposition, and metal liftoff. To create 3D metal structures, the sequence is repeated multiple times. The complexity and difficulty of stacking and aligning multiple layers limits practical implementations of 3D metal structuring using standard nanofabrication tools. Femtosecond-laser direct-writing has emerged as a pre-eminent technique for 3D nanofabrication.1,2 Femtosecond lasers are frequently used to create 3D patterns in polymers and glasses.3-7 However, 3D metal direct-writing remains a challenge. Here, we describe a method to fabricate silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm. The method enables the fabrication of patterns not feasible using other techniques, such as 3D arrays of disconnected silver voxels.8 Disconnected 3D metal patterns are useful for metamaterials where unit cells are not in contact with each other,9 such as coupled metal dot10,11or coupled metal rod12,13 resonators. Potential applications include negative index metamaterials, invisibility cloaks, and perfect lenses.
In femtosecond-laser direct-writing, the laser wavelength is chosen such that photons are not linearly absorbed in the target medium. When the laser pulse duration is compressed to the femtosecond time scale and the radiation is tightly focused inside the target, the extremely high intensity induces nonlinear absorption. Multiple photons are absorbed simultaneously to cause electronic transitions that lead to material modification within the focused region. Using this approach, one can form structures in the bulk of a material rather than on its surface.
Most work on 3D direct metal writing has focused on creating self-supported metal structures.14-16 The method described here yields sub-micrometer silver structures that do not need to be self-supported because they are embedded inside a matrix. A doped polymer matrix is prepared using a mixture of silver nitrate (AgNO3), polyvinylpyrrolidone (PVP) and water (H2O). Samples are then patterned by irradiation with an 11-MHz femtosecond laser producing 50-fs pulses. During irradiation, photoreduction of silver ions is induced through nonlinear absorption, creating an aggregate of silver nanoparticles in the focal region. Using this approach we create silver patterns embedded in a doped PVP matrix. Adding 3D translation of the sample extends the patterning to three dimensions.

Femtosecond-laser direct-writing is frequently used to create three-dimensional (3D) patterns in polymers and glasses. However, patterning metals in 3D remains a challenge. We describe a method for fabricating silver nanostructures embedded inside a polymer matrix using a femtosecond laser centered at 800 nm.

3D로 연결이 끊긴 실버 Nanostructures를 조작하는 방법

The standard nanofabrication toolkit includes  techniques primarily aimed at creating 2D patterns in dielectric media. Creating  metal patterns on a ...

Optical Trapping of Nanoparticles

Optical trapping is a technique for immobilizing and manipulating small objects in a gentle way using light, and it has been widely applied in trapping and manipulating small biological particles. Ashkin and co-workers first demonstrated optical tweezers using a single focused beam1. The single beam trap can be described accurately using the perturbative gradient force formulation in the case of small Rayleigh regime particles1. In the perturbative regime, the optical power required for trapping a particle scales as the inverse fourth power of the particle size. High optical powers can damage dielectric particles and cause heating. For instance, trapped latex spheres of 109 nm in diameter were destroyed by a 15 mW beam in 25 sec1, which has serious implications for biological matter2,3.
A self-induced back-action (SIBA) optical trapping was proposed to trap 50 nm polystyrene spheres in the non-perturbative regime4. In a non-perturbative regime, even a small particle with little permittivity contrast to the background can influence significantly the ambient electromagnetic field and induce a large optical force. As a particle enters an illuminated aperture, light transmission increases dramatically because of dielectric loading. If the particle attempts to leave the aperture, decreased transmission causes a change in momentum outwards from the hole and, by Newton's Third Law, results in a force on the particle inwards into the hole, trapping the particle. The light transmission can be monitored; hence, the trap can become a sensor. The SIBA trapping technique can be further improved by using a double-nanohole structure.
The double-nanohole structure has been shown to give a strong local field enhancement5,6. Between the two sharp tips of the double-nanohole, a small particle can cause a large change in optical transmission, thereby inducing a large optical force. As a result, smaller nanoparticles can be trapped, such as 12 nm silicate spheres7 and 3.4 nm hydrodynamic radius bovine serum albumin proteins8. In this work, the experimental configuration used for nanoparticle trapping is outlined. First, we detail the assembly of the trapping setup which is based on a Thorlabs Optical Tweezer Kit. Next, we explain the nanofabrication procedure of the double-nanohole in a metal film, the fabrication of the microfluidic chamber and the sample preparation. Finally, we detail the data acquisition procedure and provide typical results for trapping 20 nm polystyrene nanospheres.

The following setup approach details low power optical trapping of dielectric nanoparticles using a double-nanohole in metal film.

나노 입자의 광학 트래핑

Optical trapping is a technique for immobilizing and manipulating small objects in a gentle way using light, and it has been widely applied in trapping ...

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent thermal evaporation, and it absorbs visible light strongly. However, for a long time the record power conversion efficiency of SnS solar cells remained below 2%. Recently we demonstrated new certified record efficiencies of 4.36% using SnS deposited by atomic layer deposition, and 3.88% using thermal evaporation. Here the fabrication procedure for these record solar cells is described, and the statistical distribution of the fabrication process is reported. The standard deviation of efficiency measured on a single substrate is typically over 0.5%. All steps including substrate selection and cleaning, Mo sputtering for the rear contact (cathode), SnS deposition, annealing, surface passivation, Zn(O,S) buffer layer selection and deposition, transparent conductor (anode) deposition, and metallization are described. On each substrate we fabricate 11 individual devices, each with active area 0.25 cm2. Further, a system for high throughput measurements of current-voltage curves under simulated solar light, and external quantum efficiency measurement with variable light bias is described. With this system we are able to measure full data sets on all 11 devices in an automated manner and in minimal time. These results illustrate the value of studying large sample sets, rather than focusing narrowly on the highest performing devices. Large data sets help us to distinguish and remedy individual loss mechanisms affecting our devices.

Tin sulfide (SnS) is a candidate material for Earth-abundant, non-toxic solar cells. Here, we demonstrate the fabrication procedure of the SnS solar cells employing atomic layer deposition, which yields 4.36% certified power conversion efficiency, and thermal evaporation which yields 3.88%.

열 증발 및 원자 층 증착에 의해 기록 효율 SNS 태양 전지 만들기

Tin sulfide (SnS) is a candidate absorber material for Earth-abundant, non-toxic solar cells. SnS offers easy phase control and rapid growth by congruent ...

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

A procedure to measure the bulk lifetime (&#62;100 &#181;sec) of silicon wafers by temporarily attaining a very high level of surface passivation when immersing the wafers in hydrofluoric acid (HF) is presented. By this procedure three critical steps are required to attain the bulk lifetime. Firstly, prior to immersing silicon wafers into HF, they are chemically cleaned and subsequently etched in 25% tetramethylammonium hydroxide. Secondly, the chemically treated wafers are then placed into a large plastic container filled with a mixture of HF and hydrochloric acid, and then centered over an inductive coil for photoconductance (PC) measurements. Thirdly, to inhibit surface recombination and measure the bulk lifetime, the wafers are illuminated at 0.2 suns for 1 min&#160;using a halogen lamp, the illumination is switched off, and a PC measurement is immediately taken. By this procedure, the characteristics of bulk silicon defects can be accurately determined. Furthermore, it is anticipated that a sensitive RT surface passivation technique will be imperative for examining bulk silicon defects when their concentration is low (&#60;1012 cm-3).

A RT liquid surface passivation technique to investigate the recombination activity of bulk silicon defects is described. For the technique to be successful, three critical steps are required: (i) chemical cleaning and etching of silicon, (ii) immersion of silicon in 15% hydrofluoric acid and (iii) illumination for 1 min.

향상된 광 불산 패시베이션 : 벌크 실리콘 결함을 검출하기위한 민감한 기술

A procedure to measure the bulk lifetime (&#62;100 &#181;sec) of silicon wafers by temporarily attaining a very high level of surface passivation when ...

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices have used devices prepared by spin coating, a process that is not amenable to large-scale fabrication. This mismatch in device fabrication makes it difficult to translate quantitative results obtained in the laboratory to the commercial level, making optimization difficult. Using a mini-slot die coater, this mismatch can be resolved by translating the commercial process to the laboratory and characterizing the structure formation in the active layer of the device in real time and in situ as films are coated onto a substrate. The evolution of the morphology was characterized under different conditions, allowing us to propose a mechanism by which the structures form and grow. This mini-slot die coater offers a simple, convenient, material efficient route by which the morphology in the active layer can be optimized under industrially relevant conditions. The goal of this protocol is to show experimental details of how a solar cell device is fabricated using a mini-slot die coater and technical details of running in situ structure characterization using the mini-slot die coater.

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Here, we present a protocol to fabricate organic thin film solar cells using a mini-slot die coater and related in-line structure characterizations using synchrotron scattering techniques.

벌크 이종 접합 태양 전지의 인쇄 제작 및<em&gt; 현장에서</em&gt; 형태학 특성

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices ...

Digital Printing of Titanium Dioxide for Dye Sensitized Solar Cells

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less environmentally damaging with lower processing temperatures presenting a viable and low cost alternative to conventional production. This paper further enhances these environmental credentials by evaluating the digital printing and therefore additive production route for these cells. This is achieved here by investigating the formation and performance of a metal oxide photoelectrode using nanoparticle sized titanium dioxide. An ink-jettable material was formulated, characterized and printed with a piezoelectric inkjet head to produce a 2.6 &#181;m thick layer. The resultant printed layer was fabricated into a functioning cell with an active area of 0.25 cm2 and a power conversion efficiency of 3.5%. The binder-free formulation resulted in a reduced processing temperature of 250 &#176;C, compatible with flexible polyamide substrates which are stable up to temperatures of 350 &#730;C. The authors are continuing to develop this process route by investigating inkjet printing of other layers within dye sensitized solar cells.

This paper investigates the suitability of inkjet printing for the manufacturing of dye-sensitized solar cells. A binder-free TiO2 nanoparticle ink was formulated and printed onto a FTO glass substrate. The printed layer was fabricated into a cell with an active area of 0.25 cm2 and an efficiency of 3.5%.

염료 감응 형 태양 전지에 대한 이산화 티타늄의 디지털 인쇄

Silicon solar cell manufacturing is an expensive and high energy consuming process. In contrast, dye sensitized solar cell production is less ...

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Here, we demonstrate the incorporation of monovalent cation additives into CH3NH3PbI3 perovskite in order to adjust the optical, excitonic, and electrical properties. The possibility of doping was investigated by adding monovalent cation halides with similar ionic radii to Pb2+, including Cu+, Na+, and Ag+. A shift in the Fermi level and a remarkable decrease of sub-bandgap optical absorption, along with a lower energetic disorder in the perovskite, was achieved. An order-of-magnitude enhancement in the bulk hole mobility and a significant reduction of transport activation energy within an additive-based perovskite device was attained. The confluence of the aforementioned improved properties in the presence of these cations led to an enhancement in the photovoltaic parameters of the perovskite solar cell. An increase of 70 mV in open circuit voltage for AgI and a 2 mA/cm2 improvement in photocurrent density for NaI- and CuBr-based solar cells were achieved compared to the pristine device. Our work paves the way for further improvements in the optoelectronic quality of CH3NH3PbI3 perovskite and subsequent devices. It highlights a new avenue for investigations on the role of dopant impurities in crystallization and controls the electronic defect density in perovskite structures.

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Here, we present a protocol to adjust the properties of solution-processed CH3NH3PbI3 through the incorporation of monovalent cation additives in order to achieve highly efficient perovskite solar cells.

CH의 일가 양이온 도핑<sub&gt; 3</sub&gt; NH<sub&gt; 3</sub&gt; PBI<sub&gt; 3</sub&gt; 효율적인 페 로브 스카이 트 태양 전지에 대한

Here, we demonstrate the incorporation of monovalent cation additives into CH3NH3PbI3 perovskite in order to adjust the optical, excitonic, and electrical ...

Challenges in Rheological Characterization of Highly Concentrated Suspensions &#8212; A Case Study for Screen-printing Silver Pastes

A comprehensive rheological characterization of highly concentrated suspensions or pastes is mandatory for a targeted product development meeting the manifold requirements during processing and application of such complex fluids. In this investigation, measuring protocols for a conclusive assessment of different process relevant rheological parameters have been evaluated. This includes the determination of yield stress, viscosity, wall slip velocity, structural recovery after large deformation and elongation at break as well as tensile force during filament stretching.
The importance of concomitant video recordings during parallel-plate rotational rheometry for a significant determination of rheological quantities is demonstrated. The deformation profile and flow field at the sample edge can be determined using appropriate markers. Thus, measurement parameter settings and plate roughness values can be identified for which yield stress and viscosity measurements are possible. Slip velocity can be measured directly and measuring conditions at which plug flow, shear banding or sample spillover occur can be identified clearly. 
Video recordings further confirm that the change in shear moduli observed during three stage oscillatory shear tests with small deformation amplitude in stage I and III but large oscillation amplitude in stage II can be directly attributed to structural break down and recovery. For the pastes investigated here, the degree of irreversible, shear-induced structural change increases with increasing deformation amplitude in stage II until a saturation is reached at deformations corresponding to the crossover of G' and G'', but the irreversible damage is independent of the duration of large amplitude shear. 
A capillary breakup elongational rheometer and a tensile tester have been used to characterize deformation and breakup behavior of highly filled pastes in uniaxial elongation. Significant differences were observed in all experiments described above for two commercial screen-printing silver pastes used for front side metallization of Si-solar cells.

Challenges in Rheological Characterization of Highly Concentrated Suspensions &amp;#8212; A Case Study for Screen-printing Silver Pastes

A protocol for a robust and application relevant rheological characterization of highly concentrated suspensions is presented. Silver pastes used for screen-printing application in solar cell production are employed as model systems.

고농도 현탁액의 유변학 적 특성에 도전 - 스크린 인쇄 실버 페이스트에 대한 사례 연구

A comprehensive rheological characterization of highly concentrated suspensions or pastes is mandatory for a targeted product development meeting the ...

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for Cu(In,Ga)Se2 Solar Cells

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction of degradation mechanisms and prevention of module field failure can consequently decrease investment risks as well as increase the electricity yield. An improved knowledge level can for these reasons significantly decrease the total costs of PV electricity. 
In order to better understand and minimize the degradation of PV modules, the occurring degradation mechanisms and conditions should be identified. This should preferably happen under combined stresses, since modules in the field are also simultaneously exposed to multiple stress factors. Therefore, two 'Combined Stress test with in situ measurement' setups have been designed and constructed. These setups allow the simultaneous use of humidity, temperature, illumination, and electrical biases as independently controlled stress factors on solar cells and minimodules. The setups also allow real-time monitoring of the electrical properties of these samples. This protocol presents these setups and describes the experimental possibilities. Moreover, results obtained with these setups are also presented: various examples about the influence of both deposition and degradation conditions on the stability of thin film Cu(In,Ga)Se2 (CIGS) as well as Cu2ZnSnSe4 (CZTS) solar cells are described. Results on the temperature dependency of CIGS solar cells are also presented.

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for CuIn,GaSe2 Solar Cells

Two &#39;Combined Stress test with in situ measurement&#39; setups, which allow real-time monitoring of accelerated degradation of solar cells and modules, were designed and constructed. These setups allow the simultaneous use of humidity, temperature, electrical biases, and illumination as independently controlled stress factors. The setups and various experiments executed are presented.

제자리에서 태양 전지 및 모듈의 가속된 성능 저하의 모니터링: Cu (In, Ga) Se2 태양 전지에 대 한 사례 연구

The levelized cost of electricity (LCOE) of photovoltaic (PV) systems is determined by, among other factors, the PV module reliability. Better prediction ...