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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

DOI :

10.3791/50581-v

November 1st, 2013

November 1st, 2013

15,807 Views

1Département de Physique, Faculté des Sciences, Université de Sherbrooke

This paper presents a detailed fabrication protocol for gate-defined semiconductor lateral quantum dots on gallium arsenide heterostructures. These nanoscale devices are used to trap few electrons for use as quantum bits in quantum information processing or for other mesoscopic experiments such as coherent conductance measurements.

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