JoVE Logo
Centre de ressources universitaires

S'identifier

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

DOI :

10.3791/50581-v

November 1st, 2013

November 1st, 2013

15,828 Views

1Département de Physique, Faculté des Sciences, Université de Sherbrooke

This paper presents a detailed fabrication protocol for gate-defined semiconductor lateral quantum dots on gallium arsenide heterostructures. These nanoscale devices are used to trap few electrons for use as quantum bits in quantum information processing or for other mesoscopic experiments such as coherent conductance measurements.

Tags

Nanofabrication

-- Vues

Vidéos Connexes

article

Compact Quantum Dots for Single-molecule Imaging

article

Gradient Echo Quantum Memory in Warm Atomic Vapor

article

Analysis of Contact Interfaces for Single GaN Nanowire Devices

article

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

article

Quantum State Engineering of Light with Continuous-wave Optical Parametric Oscillators

article

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

article

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

article

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

article

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

article

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

JoVE Logo

Confidentialité

Conditions d'utilisation

Politiques

Recherche

Enseignement

À PROPOS DE JoVE

Copyright © 2024 MyJoVE Corporation. Tous droits réservés.