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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

DOI :

10.3791/53872-v

11:14 min

May 28th, 2016

May 28th, 2016

12,923 Views

1Institute of Applied Physics, Semiconductor Physics, Technische Universität Dresden, 2Institut für Strukturphysik, Technische Universität Dresden

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.

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Scanning Electron Microscope

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