JoVE Logo
Faculty Resource Center

Sign In

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

DOI :

10.3791/52745-v

July 17th, 2015

July 17th, 2015

10,716 Views

1Department of Materials Science and Engineering, The Ohio State University, 2Department of Electrical and Computer Engineering, The Ohio State University, 3Institute of Materials Research, The Ohio State University

The use of electron channeling contrast imaging in a scanning electron microscope to characterize defects in III-V/Si heteroexpitaxial thin films is described. This method yields similar results to plan-view transmission electron microscopy, but in significantly less time due to lack of required sample preparation.

Tags

Electron Channeling Contrast Imaging

-- Views

Related Videos

article

Spatial Separation of Molecular Conformers and Clusters

article

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

article

Fabrication of High Contrast Gratings for the Spectrum Splitting Dispersive Element in a Concentrated Photovoltaic System

article

Use of a Multi-compartment Dynamic Single Enzyme Phantom for Studies of Hyperpolarized Magnetic Resonance Agents

article

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

article

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

article

Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization

article

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

article

A Rapid Method for Modeling a Variable Cycle Engine

article

Method Development for Contactless Resonant Cavity Dielectric Spectroscopic Studies of Cellulosic Paper

JoVE Logo

Privacy

Terms of Use

Policies

Research

Education

ABOUT JoVE

Copyright © 2024 MyJoVE Corporation. All rights reserved