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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

DOI :

10.3791/52745-v

July 17th, 2015

July 17th, 2015

10,727 Views

1Department of Materials Science and Engineering, The Ohio State University, 2Department of Electrical and Computer Engineering, The Ohio State University, 3Institute of Materials Research, The Ohio State University

The use of electron channeling contrast imaging in a scanning electron microscope to characterize defects in III-V/Si heteroexpitaxial thin films is described. This method yields similar results to plan-view transmission electron microscopy, but in significantly less time due to lack of required sample preparation.

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Electron Channeling Contrast Imaging

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