We thank A. Sharoni from Bar-Ilan University for providing the superconducting films. This research was supported by European Research Council Grant ERC-2014-STG- 639792, Marie Curie Career Integration Grant FP7-PEOPLE-2012-CIG-333799, and Israel Science Foundation Grant ISF-1102/13.

1. Access to a Scanning SQUID System
<ol>
	<li>Use a scanning SQUID system that includes a SQUID sensor fabricated on a chip9,10, stick slip coarse motion stage, and a piezo-based scanner for fine motion. See Figure 1.</li>
	<li>Polish the SQUID chip into a corner around the pickup loop. The material of the chip needs to be removed all the way to the pickup loop.
	<ol>
		<li>Gently polish the SQUID, using a 5 to 0.5 &#181;m nonmagnetic polishing paper. 
		NOTE: After the polishing stage the pickup loop can be brought into close proximity, or contact, with the sample.</li>
	</ol>
	</li>
</ol>
2. Deposition of Niobium (Nb) Thin Film with Direct Current (DC) Sputtering
<ol>
	<li>Obtain a substrate. In this work, use a boron-doped silicon substrate with 500 nm of silicon oxide. Other substrates such as SrTiO and MgO are possible.</li>
	<li>Reach a base pressure of 10-7 Torr in the chamber. Pre-sputter the evaporation chamber at room temperature with a 99.95% Nb target, in an argon environment at a pressure of 2.4 mTorr with a deposition rate of 1.8 &#197;/s for 10 min. Note that the deposition process can start only when the base pressure in the chamber is less than 10-7 Torr. If pressure is higher repeat the pre-sputtering stage.</li>
	<li>Place substrate in the chamber.</li>
	<li>Deposit Nb thin film by sputtering at room temperature from a 99.95% Nb target, in an argon environment at pressure of 2.4 mTorr with a deposition rate of 1.8 &#197;/s.</li>
</ol>
3. Sample-tip Alignment
<ol>
	<li>In this stage, align the sensor chip with the sample so that the tip of the chip makes contact with the sample when moving the vortices. To achieve this, use an alignment angle of at least 4&#176;.</li>
	<li>Glue a flexible cantilever on a conducting plate with a dielectric layer. Then, glue the SQUID chip on the cantilever. The capacitance between the cantilever and a static plate determines the contact with the sample and the extent of stress applied.</li>
	<li>Load sample on the microscope. Glue the sample to a designated sample mount using a varnish or silver paste. Glue the mount to the Z piezo element (Figure 1a).</li>
	<li>Connect the stick slip coarse motion system to a controller.</li>
	<li>Set up optical imaging from two angles &#8212; the front and the side of the chip. Use two telescopes placed on translation stages, directed to the front of the chip and one of its sides.</li>
	<li>Using the Z stick slip coarse motion stage, move the sample to a distance of 1 &#181;m from the sensor, so that the sensor&#39;s reflection is visible on the sample. 
	NOTE: Contact between the sample and the sensor at this stage may harm the SQUID.</li>
	<li>Move the sample 0.5 - 1 mm away from the sensor using the Z stick slip coarse motion stage to prevent damage to the SQUID.</li>
	<li>Rotate the alignment screws (Figure 1a) to get equal front angles (i.e., angles the sides of the chip&#39;s tip make with its reflection, as seen in Figure 1c).</li>
	<li>Move the sample to a distance of 1 &#181;m from the sensor. Check the angles and repeat step 3.7 and 3.8 if necessary.</li>
	<li>Rotate the alignment screws to get an angle of 4 degrees between the sensor and the sample (Figure 1d). Make sure the tip of the chip is the part which makes contact with the sample.</li>
</ol>
4. Measurements
<ol>
	<li>Load the scanning head (Figure 1a) to a 4 K cooling system. 
	NOTE: Scanning head should be connected to a cold plate, and surrounded by a vacuum can. Wire a coil around the can for applying external magnetic field (low fields of several Gauss are sufficient for this study). Cover this setup with a Mu-metal shield.</li>
	<li>Cool in the presence of magnetic field, by applying current through the coil surrounding the microscope. Choose the field strength carefully to achieve the desired vortex density. Use 1&#934;0 = 20.7 G/&#956;m2 to calculate the cooldown field. For example, for 10 vortices in a 10 &#181;m by 10 &#181;m area, apply 2.07 G.</li>
	<li>For changing to a new vortex density heat sample above the superconducting transition temperature (For Nb, heat above 10 K). Apply the new field.</li>
	<li>Cool sample to 4.2 K.</li>
	<li>Turn magnetic field off. Turn SQUID on.</li>
	<li>Move the sample close to the SQUID using the stick slip coarse motion system.
	<ol>
		<li>Apply increasing voltages on the Z-stick slip cube to move the sample closer to the SQUID chip.</li>
		<li>Apply voltage between the cantilever and the plate for reading the capacitance using a capacitance bridge (0.1-1 V typically).</li>
		<li>Sweep the voltage on the Z piezo element. Measure the capacitance between the cantilever and the plate. If a large change in the capacitance occurs, the sample is in contact with the SQUID chip.</li>
		<li>If the sample did not make contact with the chip, repeat steps 4.6.1-4.6.3 until contact is observed.</li>
		<li>Optional: Use course motion to adjust the spacing between the tip and the sample so that contact occurs at low voltages (0 - 10 V applied on the Z piezo).</li>
		<li>Once there is contact, repeat steps 4.6.2-4.6.3 in several locations in order to determine the tilt angles of the surface and to define the plane of the sample, relative to the sensor.</li>
	</ol>
	</li>
	<li>Sweep the voltage on the X and Y piezo elements in order to move the sample relative to the sensor. Scan at a constant height above the sample, without contact between the tip and the sample, in order to map vortex distribution. Achieve a constant scan height by changing the voltage on the Z piezo according to the X and Y locations, and to the plane defined in 4.6.</li>
	<li>Choose a vortex and scan around it to precisely determine the location of its center. Note that the vortex location is relative to the SQUID&#39;s pickup loop, not to the contact point.</li>
	<li>Turn SQUID off.</li>
	<li>Apply a voltage that is greater than the touchdown voltage to the z piezo and either tap next to the vortex center or sweep the vortex by dragging the sensor (in contact with the sample) slowly on the sample to a desired location. The vortex will move towards the tap or in the sweeping direction. Typical values to add to the applied z piezo voltage are 2-5 V.</li>
	<li>Turn SQUID on.</li>
	<li>Image again at a constant height without contact to locate the new location of the vortex.</li>
</ol>

<ol>
	<li>Olson Reichhardt, C. J., Hastings, M. B. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Do+Vortices+Entangle?.">Do Vortices Entangle?.</a> Phys. Rev. Lett. 92, 157002 (2004).</li><li>Milo&#353;evi&#263;, M. V., Berdiyorov, G. R., Peeters, F. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Fluxonic+cellular+automata.">Fluxonic cellular automata.</a> Appl. Phys. Lett. 91, 212501 (2007).</li><li>Kalisky, B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Scanning+Probe+Manipulation+of+Magnetism+at+the+LaAlO3/SrTiO3+Heterointerface.">Scanning Probe Manipulation of Magnetism at the LaAlO3/SrTiO3 Heterointerface.</a> Nano Lett. 12, 4055-4059 (2012).</li><li>Silva, C. C. D. S., Van de Vondel, J., Morelle, M., Moshchalkov, V. V. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Controlled+multiple+reversals+of+a+ratchet+effect.">Controlled multiple reversals of a ratchet effect.</a> Nature. 440, 651-654 (2006).</li><li>Kalisky, B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Dynamics+of+single+vortices+in+grain+boundaries:+I-V+characteristics+on+the+femtovolt+scale.">Dynamics of single vortices in grain boundaries: I-V characteristics on the femtovolt scale.</a> Appl. Phys. Lett. 94, 202504 (2009).</li><li>Embon, L., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Probing+dynamics+and+pinning+of+single+vortices+in+superconductors+at+nanometer+scales.">Probing dynamics and pinning of single vortices in superconductors at nanometer scales.</a> Sci. Rep. 5, 7598 (2015).</li><li>Auslaender, O. M., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Mechanics+of+individual+isolated+vortices+in+a+cuprate+superconductor.">Mechanics of individual isolated vortices in a cuprate superconductor.</a> Nature Phys. 5, 35-39 (2008).</li><li>Kalisky, B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Behavior+of+vortices+near+twin+boundaries+in+underdoped+Ba(Fe1-xCox)2As2.">Behavior of vortices near twin boundaries in underdoped Ba(Fe1-xCox)2As2.</a> Phys. Rev. B. 83, 064511 (2011).</li><li>Huber, M. E., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Gradiometric+micro-SQUID+susceptometer+for+scanning+measurements+of+mesoscopic+samples.">Gradiometric micro-SQUID susceptometer for scanning measurements of mesoscopic samples.</a> Rev. Sci. Instrum. 79, 053704 (2008).</li><li>Koshnick, N. C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=A+terraced+scanning+super+conducting+quantum+interference+device+susceptometer+with+submicron+pickup+loops.">A terraced scanning super conducting quantum interference device susceptometer with submicron pickup loops.</a> Appl. Phys. Lett. 93, 243101 (2008).</li><li>Kremen, A., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Mechanical+Control+of+Individual+Superconducting+Vortices.">Mechanical Control of Individual Superconducting Vortices.</a> Nano Lett. 16, 1626-1630 (2016).</li></ol>

The authors have nothing to disclose.

Successful manipulation of vortices depends on several critical steps. It is important to align the sensor at an angle, such that the tip of the chip will be the first to make contact with the sample. Second, it is important to note that the force exerted on the sample is determined by the mechanical properties of the cantilever that the chip is mounted on. In the elastic regime, the force applied is proportional to the deflection, x, according to Hooke&#39;s law: 
F = -kx
Where k is the spring constant, determined by Young&#39;s modulus of the material, and its physical dimensions, and is given by 
k = Et3w/4l3
Here, E is Young&#8217;s modulus, t is the thickness of the beam, w is the width and l is the length. For a copper cantilever, E=117 GPa. Our cantilever was 0.017 mm thick, 3 mm wide and 10.7 mm long, which give k=0.35 N/m. When the voltage in the Z piezo was 1 V below touchdown, the deflection was 1.6 &#181;m. This gives a force of 0.56 &#181;N. It is important to choose the cantilever material and dimensions properly, to get the desired force.
It is also important to note that the location of the vortex as scanned by the SQUID is relative to the pickup loop, and that the contact point is displaced from the pickup loop according to the size of the chip and the polishing. This displacement is to be accounted for when choosing the location of the tap event, or the contact scan, to insure that the tip of the chip makes contact near the vortex location.
If a vortex was not displaced after scanning in contact, applying more stress by pushing the tip harder into the sample, pressing the sample for a longer period or dragging the tip more slowly across the sample may help overcome the pinning force and dislocate the vortex.
The sample did not show memory of the manipulation; we observed no change in the diamagnetism of the sample, corresponding to the superfluid density, as well as no change to the topography of the sample. New vortex configurations created after reheating and cooling in the presence of magnetic field did not show memory of previous manipulations either11.
Our method is limited by the size of the contact point. The technique has the potential for fine tuning the location of vortices, but so far we have demonstrated the abilities of the protocol for rather large, polished tips of the chip (from 100 nm up to 1 &#181;m). Characterization of the tip is needed in order to know the strain gradients.
In conclusion, our protocol allows for manipulation of individual vortices in superconducting thin films at low temperatures and without further fabrication of the sample. Mastering the ability to control the location of vortices may have applications in the design of flux based logic gates, as well as in the study of interactions of vortices with other vortices, the lattice, and other magnetic particles.

Vortices are magnetic objects at the nanoscale, formed in type 2 superconductors in the presence of external magnetic field. In a defect free sample, vortices can move freely. However, different defects in the material result in regions of reduced superconductivity which are energetically favorable for vortices. Vortices tend to decorate these regions, also known as the pinning sites. In this case, the force required to move a vortex must be greater than the pinning force. Properties of vortices, such as vortex density, interaction strength and range, can be easily determined by external field, temperature, or geometry of the sample. The ability to control these properties makes them a good model system for condensed matter behavior that can be easily tuned, as well as suitable candidates for electronic applications1,2. Control of the location of individual vortices is essential for the design of such logical elements.
Mechanical control of magnetic nanoparticles had been achieved before. Kalisky et al. recently used scanning superconducting quantum interference device (SQUID) to study the influence of local mechanical stress on ferromagnetic patches in complex oxide interfaces3. They were able to change the orientation of the patch by scanning in contact, pressing the tip of the SQUID into the sample, applying a force of up to 1 &#181;N in the process. We have used a similar method in our protocol in order to move vortices.
In existing studies of vortex manipulation, motion was achieved by applying current to the sample, thus creating Lorentz force4,5,6. While this method is effective, it is not local, and in order to control a single vortex, additional fabrication is required. Vortices can also be manipulated by applying external magnetic field, for example with a magnetic force microscope (MFM) or with a SQUID field coil7,8. This method is effective and local, but the force applied by these tools is small, and can overcome the pinning force only at high temperatures, close to the critical temperature of the superconductor. Our protocol allows effective, local manipulation at low temperatures (4 K) without additional fabrication of the sample.
We image vortices using scanning SQUID microscopy. The sensor is fabricated on a silicon chip which is polished into a corner, and glued on a flexible cantilever. The cantilever is used for capacitive sensing of the surface. The chip is placed at an angle to the sample, so that the contact point is at the tip of the chip. We apply forces of up to 2 &#181;N by pushing the chip into the sample. We move the sample relative to the SQUID by piezo elements. We move the vortex by tapping the silicon tip next to a vortex, or by sweeping it, touching the vortex.

<table border="0" cellpadding="0" cellspacing="0" width="837">
	<tbody>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">stick slip coarse motion system</td>
			<td style="width:207px;">attocube</td>
			<td style="width:135px;">ANPx-101</td>
			<td style="width:199px;">x,y motion</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">stick slip coarse motion system</td>
			<td style="width:207px;">attocube</td>
			<td style="width:135px;">ANPz-101</td>
			<td>z motion</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:299px;">stick slip coarse motion system controller</td>
			<td style="width:207px;">Attocube</td>
			<td style="width:135px;">ANC 300</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">high voltage amplifier</td>
			<td style="width:207px;">Attocube</td>
			<td style="width:135px;">ANC 250</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">data acquisition card</td>
			<td style="width:207px;">National Instruments</td>
			<td style="width:135px;">NI&#160;PCIe-6363</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">piezo elements</td>
			<td style="width:207px;">Piezo Systems Inc</td>
			<td style="width:135px;">T2C</td>
			<td>non magnetic</td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:299px;">low noise voltage preamplifier</td>
			<td style="width:207px;">Stanford Research Systems</td>
			<td style="width:135px;">SR 560</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">capacitance bridge</td>
			<td style="width:207px;">General Radio</td>
			<td style="width:135px;">1615A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">telescope</td>
			<td style="width:207px;">NAVITAR</td>
			<td style="width:135px;">1-504516</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">camera</td>
			<td style="width:207px;">MOTICAM</td>
			<td style="width:135px;">MP2</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">dewar</td>
			<td style="width:207px;">Cryofab</td>
			<td style="width:135px;">N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">insert</td>
			<td style="width:207px;">ICE oxford</td>
			<td style="width:135px;">N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">Mu-metal shield</td>
			<td style="width:207px;">Amuneal</td>
			<td style="width:135px;">N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">vacuum cap</td>
			<td style="width:207px;">ICE oxford</td>
			<td style="width:135px;">N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">sputtering system</td>
			<td style="width:207px;">AJA international Inc</td>
			<td style="width:135px;">N/A</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">lapping film</td>
			<td style="width:207px;">3M</td>
			<td style="width:135px;">261X</td>
			<td>non magnetic</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">Nb target</td>
			<td style="width:207px;">Kurt J. Lesker</td>
			<td style="width:135px;">EJTNBXX351A2</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:299px;">GE Varnish</td>
			<td style="width:207px;">CMR-Direct</td>
			<td style="width:135px;">02-33-001</td>
			<td>for cryogenic heatsinking</td>
		</tr>
		<tr height="22">
			<td height="22" style="height:22px;width:299px;">Silver paste</td>
			<td style="width:207px;">Structure Probe Inc</td>
			<td style="width:135px;">05063-AB</td>
			<td></td>
		</tr>
	</tbody>
</table>

scanning squid study of vortex manipulation by local contact

Local, deterministic manipulation of individual vortices in type 2 superconductors is challenging. The ability to control the position of individual vortices is necessary in order to study how vortices interact with each other, with the lattice, and with other magnetic objects. Here, we present a protocol for vortex manipulation in thin superconducting films by local contact, without applying current or magnetic field. Vortices are imaged using a scanning superconducting quantum interference device (SQUID), and vertical stress is applied to the sample by pushing the tip of a silicon chip into the sample, using a piezoelectric element. Vortices are moved by tapping the sample or sweeping it with the silicon tip. Our method allows for effective manipulation of individual vortices, without damaging the film or affecting its topography. We demonstrate how vortices were relocated to distances of up to 0.8 mm. The vortices remained stable at their new location up to five days. With this method, we can control vortices and move them to form complex configurations. This technique for vortex manipulation could also be implemented in applications such as vortex based logic devices.

Our protocol was successfully tested on thousands of individual, well separated vortices in two samples of Nb, and nine samples of NbN. We generate new vortices on the same sample by heating the sample above Tc, and cooling it back to 4.2 K in the presence of a magnetic field. We chose the external magnetic field to achieve the desired vortex density. We show here data from these experiments. These results have been described in detail by Kremen et al.11.
The protocol described here allows for controllable manipulation of vortices into various configurations (Figure 2). Single vortices were moved over distances up to 1 mm (Figure 3), and remained stable at their new locations.
<img alt="Figure 1" src="/files/ftp_upload/54986/54986fig1.jpg" /> 
Figure 1. Scanning SQUID system. (a) The scanning head. (b) Enlarged photo of the area circled in (a). (c) Sample-sensor front angle. The angles &#945; and &#946; between the chip and its reflection from the sample should be equal on both sides. (d) The chosen alignment angle between the sensor and the sample. The angle between the chip and the reflection is twice the desired angle, which should be at least 4&#176;. <a href="http://cloudflare.jove.com/files/ftp_upload/54986/54986fig1large.jpg" target="_blank">Please click here to view a larger version of this figure.</a>
<img alt="Figure 2" src="/files/ftp_upload/54986/54986fig2.jpg" /> 
Figure 2. Manipulation of vortices to form the letter B. (a) Initial configuration after cooling the sample in the presence of magnetic field. (b) A new configuration after moving the vortices, in the shape of the letter B. <a href="http://cloudflare.jove.com/files/ftp_upload/54986/54986fig2large.jpg" target="_blank">Please click here to view a larger version of this figure.</a>
<img alt="Figure 3" src="/files/ftp_upload/54986/54986fig3.jpg" /> 
Figure 3. Several manipulations of a single vortex, dragging it over a distance of 820 &#181;m. Inset: (a) A single vortex. The keyhole shape is due to convolution between the magnetic signal and the sensor&#39;s point spread function. (b) A scan in contact with the SQUID turned on. The initial location of the vortex is at the left of the picture. The peak of the signal moves to the right with the vortex, until the vortex is relocated at the right end and no longer moves. (c) A sketch of a scan in contact. The tip of the sensor is the first to make contact with the sample, while the vortex location received from the scan is relative to the pickup loop, which is offset from the tip. <a href="http://cloudflare.jove.com/files/ftp_upload/54986/54986fig3large.jpg" target="_blank">Please click here to view a larger version of this figure.</a>

Watch this Scientific Journal Video about Scanning SQUID Study of Vortex Manipulation by Local Contact at JoVE.com

Scanning SQUID Study of Vortex Manipulation by Local Contact

We present a protocol for manipulation of individual vortices in thin superconducting films, using local mechanical contact. The method does not include applying current, magnetic field or additional fabrication steps.

Local, deterministic manipulation of individual vortices in type 2 superconductors is challenging. The ability to control the position of individual ...

scanning-squid-study-of-vortex-manipulation-by-local-contact

Nanyang Technological University

Research

JoVE Journal

Engineering

6.8K Views.  Bar-Ilan University. We present a protocol for manipulation of individual vortices in thin superconducting films, using local mechanical contact. The method does not include applying current, magnetic field or additional fabrication steps. 

Video: Scanning SQUID Study of Vortex Manipulation by Local Contact

Scanning-probe Single-electron Capacitance Spectroscopy

The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the electronic quantum structure of small systems - including individual atomic dopants in semiconductors. Here we present a capacitance-based method, known as Subsurface Charge Accumulation (SCA) imaging, which is capable of resolving single-electron charging while achieving sufficient spatial resolution to image individual atomic dopants. The use of a capacitance technique enables observation of subsurface features, such as dopants buried many nanometers beneath the surface of a semiconductor material1,2,3. In principle, this technique can be applied to any system to resolve electron motion below an insulating surface.
As in other electric-field-sensitive scanned-probe techniques4, the lateral spatial resolution of the measurement depends in part on the radius of curvature of the probe tip. Using tips with a small radius of curvature can enable spatial resolution of a few tens of nanometers. This fine spatial resolution allows investigations of small numbers (down to one) of subsurface dopants1,2. The charge resolution depends greatly on the sensitivity of the charge detection circuitry; using high electron mobility transistors (HEMT) in such circuits at cryogenic temperatures enables a sensitivity of approximately 0.01 electrons/Hz&frac12; at 0.3 K 5.

Scanning-probe single-electron capacitance spectroscopy facilitates the study of single-electron motion in localized subsurface regions. A sensitive charge-detection circuit is incorporated into a cryogenic scanning probe microscope to investigate small systems of dopant atoms beneath the surface of semiconductor samples.

The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the ...

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit a strong degradation after annealing due to the occurrence of void formation at the contact/SiO2 interface. This void formation can cause cracking and delamination of the metal film, which can increase the resistance or lead to a complete failure of the NW device. In order to address issues associated with void formation, a technique was developed that removes Ni/Au contact metal films from the substrates to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN NW devices. This procedure determines the degree of adhesion of the contact films to the substrate and NWs and allows for the characterization of the morphology and composition of the contact interface with the substrate and nanowires. This technique is also useful for assessing the amount of residual contamination that remains from the NW suspension and from photolithographic processes on the NW-SiO2 surface prior to metal deposition. The detailed steps of this procedure are presented for the removal of annealed Ni/Au contacts to Mg-doped GaN NWs on a SiO2 substrate.

A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.

Single GaN nanowire (NW) devices fabricated on SiO2 can exhibit  a strong degradation after annealing due to the  occurrence of void formation at the ...

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms.
In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station.

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra ...

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography (CT) and Light Microscopy (LM) Correlated with Scanning Electron Microscopy (SEM)

In failure analysis, device characterization and reverse engineering of light emitting diodes (LEDs), and similar electronic components of micro-characterization, plays an important role. Commonly, different techniques like X-ray computed tomography (CT), light microscopy (LM) and scanning electron microscopy (SEM) are used separately. Similarly, the results have to be treated for each technique independently. Here a comprehensive study is shown which demonstrates the potentials leveraged by linking CT, LM and SEM. In depth characterization is performed on a white emitting LED, which can be operated throughout all characterization steps. Major advantages are: planned preparation of defined cross sections, correlation of optical properties to structural and compositional information, as well as reliable identification of different functional regions. This results from the breadth of information available from identical regions of interest (ROIs): polarization contrast, bright and dark-field LM images, as well as optical images of the LED cross section in operation. This is supplemented by SEM imaging techniques and micro-analysis using energy dispersive X-ray spectroscopy.

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

A workflow for comprehensive micro-characterization of active optical devices is outlined. It contains structural as well as functional investigations by means of CT, LM and SEM. The method is demonstrated for a white LED which can be still be operated during characterization.

In failure analysis, device characterization and reverse engineering of light emitting diodes (LEDs), and similar electronic components of ...

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications ...

Hand Controlled Manipulation of Single Molecules via a Scanning Probe Microscope with a 3D Virtual Reality Interface

Considering organic molecules as the functional building blocks of future nanoscale technology, the question of how to arrange and assemble such building blocks in a bottom-up approach is still open. The scanning probe microscope (SPM) could be a tool of choice; however, SPM-based manipulation was until recently limited to two dimensions (2D). Binding the SPM tip to a molecule at a well-defined position opens an opportunity of controlled manipulation in 3D space. Unfortunately, 3D manipulation is largely incompatible with the typical 2D-paradigm of viewing and generating SPM data on a computer. For intuitive and efficient manipulation we therefore couple a low-temperature non-contact atomic force/scanning tunneling microscope (LT NC-AFM/STM) to a motion capture system and fully immersive virtual reality goggles. This setup permits &#34;hand controlled manipulation&#34; (HCM), in which the SPM tip is moved according to the motion of the experimenter&#39;s hand, while the tip trajectories as well as the response of the SPM junction are visualized in 3D. HCM paves the way to the development of complex manipulation protocols, potentially leading to a better fundamental understanding of nanoscale interactions acting between molecules on surfaces. Here we describe the setup and the steps needed to achieve successful hand-controlled molecular manipulation within the virtual reality environment.

We demonstrate the precise manipulation of individual organic molecules on a metal surface with the tip of a scanning probe microscope driven in 3D by the experimenter's hand using a motion capture system and fully immersive virtual reality goggles.

Considering organic molecules as the functional building blocks of future nanoscale technology, the question of how to arrange and assemble such building ...

Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography

Nano-patterns fabricated with extreme ultraviolet (EUV) or electron-beam (E-beam) lithography exhibit unexpected variations in size. This variation has been attributed to statistical fluctuations in the number of photons/electrons arriving at a given nano-region arising from shot-noise (SN). The SN varies inversely to the square root of a number of photons/electrons. For a fixed dosage, the SN is larger in EUV and E-beam lithographies than for traditional (193 nm) optical lithography. Bottom-up and top-down patterning approaches are combined to minimize the effects of shot noise in nano-hole patterning. Specifically, an amino-silane surfactant self-assembles on a silicon wafer that is subsequently spin-coated with a 100 nm film of a PMMA-based E-beam photoresist. Exposure to the E-beam and the subsequent development uncover the underlying surfactant film at the bottoms of the holes. Dipping the wafer in a suspension of negatively charged, citrate-capped, 20 nm gold nanoparticles (GNP) deposits one particle per hole. The exposed positively charged surfactant film in the hole electrostatically funnels the negatively charged nanoparticle to the center of an exposed hole, which permanently fixes the positional registry. Next, by heating near the glass transition temperature of the photoresist polymer, the photoresist film reflows and engulfs the nanoparticles. This process erases the holes affected by SN but leaves the deposited GNPs locked in place by strong electrostatic binding. Treatment with oxygen plasma exposes the GNPs by etching a thin layer of the photoresist. Wet-etching the exposed GNPs with a solution of I2/KI yields uniform holes located at the center of indentations patterned by E-beam lithography. The experiments presented show that the approach reduces the variation in the size of the holes caused by SN from 35% to below 10%. The method extends the patterning limits of transistor contact holes to below 20 nm.

Uniformly sized nanoparticles can remove fluctuations in contact hole dimensions patterned in poly(methyl methacrylate) (PMMA) photoresist films by electron beam (E-beam) lithography. The process involves electrostatic funneling to center and deposit nanoparticles in contact holes, followed by photoresist reflow and plasma- and wet-etching steps.

Nano-patterns fabricated with extreme ultraviolet (EUV) or electron-beam (E-beam) lithography exhibit unexpected variations in size. This variation has ...

Precision Milling of Carbon Nanotube Forests Using Low Pressure Scanning Electron Microscopy

A nanoscale fabrication technique appropriate for milling carbon nanotube (CNT) forests is described. The technique utilizes an environmental scanning electron microscope (ESEM) operating with a low pressure water vapor ambient. In this technique, a portion of the electron beam interacts with the water vapor in the vicinity of the CNT sample, dissociating the water molecules into hydroxyl radicals and other species by radiolysis. The remainder of the electron beam interacts with the CNT forest sample, making it susceptible to oxidation from the chemical products of radiolysis. This technique may be used to trim a selected region of an individual CNT, or it may be used to remove hundreds of cubic microns of material by adjusting ESEM parameters. The machining resolution is similar to the imaging resolution of the ESEM itself. The technique produces only small quantities of carbon residue along the boundaries of the cutting zone, with minimal effect on the native structural morphology of the CNT forest.

Low pressure scanning electron microscopy in a water vapor ambient is used to machine nanoscale to microscale features in carbon nanotube forests.

A nanoscale fabrication technique appropriate for milling carbon nanotube (CNT) forests is described. The technique utilizes an environmental scanning ...

Measurements of Soil Carbon by Neutron-Gamma Analysis in Static and Scanning Modes

The herein described application of the inelastic neutron scattering (INS) method for soil carbon analysis is based on the registration and analysis of gamma rays created when neutrons interact with soil elements. The main parts of the INS system are a pulsed neutron generator, NaI(Tl) gamma detectors, split electronics to separate gamma spectra due to INS and thermo-neutron capture (TNC) processes, and software for gamma spectra acquisition and data processing. This method has several advantages over other methods in that it is a non-destructive in situ method that measures the average carbon content in large soil volumes, is negligibly impacted by local sharp changes in soil carbon, and can be used in stationary or scanning modes. The result of the INS method is the carbon content from a site with a footprint of ~2.5 - 3 m2 in the stationary regime, or the average carbon content of the traversed area in the scanning regime. The measurement range of the current INS system is &#62;1.5 carbon weight % (standard deviation &#177; 0.3 w%) in the upper 10 cm soil layer for a 1 hmeasurement.

Here, we present the protocol for in situ measurement of soil carbon using the neutron-gamma technique for single point measurements (static mode) or field averages (scanning mode). We also describe system construction and elaborate data treatment procedures.

The herein described application of the inelastic neutron scattering (INS) method for soil carbon analysis is based on the registration and analysis of ...

Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques

Electron and x-ray magnetic microscopies allow for high-resolution magnetic imaging down to tens of nanometers. However, the samples need to be prepared on transparent membranes which are very fragile and difficult to manipulate. We present processes for the fabrication of samples with magnetic micro- and nanostructures with spin configurations forming magnetic vortices suitable for Lorentz transmission electron microscopy and magnetic transmission x-ray microscopy studies. The samples are prepared on silicon nitride membranes and the fabrication consists of a spin coating, UV and electron-beam lithography, the chemical development of the resist, and the evaporation of the magnetic material followed by a lift-off process forming the final magnetic structures. The samples for the Lorentz transmission electron microscopy consist of magnetic nanodiscs prepared in a single lithography step. The samples for the magnetic x-ray transmission microscopy are used for time-resolved magnetization dynamic experiments, and magnetic nanodiscs are placed on a waveguide which is used for the generation of repeatable magnetic field pulses by passing an electric current through the waveguide. The waveguide is created in an extra lithography step.

A protocol for the fabrication of magnetic micro- and nanostructures with spin configurations forming magnetic vortices suitable for transmission electron microscopy (TEM) and magnetic transmission x-ray microscopy (MTXM) studies is presented.

Electron and x-ray magnetic microscopies allow for high-resolution magnetic imaging down to tens of nanometers. However, the samples need to be prepared ...