The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

8.7K Views

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12:32 min

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May 24th, 2020

DOI :

10.3791/60798-v

May 24th, 2020

•

Tiago C. Gomes*¹, Dinesh Kumar*², Neri Alves*¹, Jeff Kettle*², Lucas Fugikawa-Santos*³

¹School of Technology and Sciences, São Paulo State University - UNESP, ²Scholl of Electronic Engineering, Bangor University, ³Institute of Geosciences and Exact Sciences, São Paulo State University - UNESP

Summary

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Anodization Parameters

Aluminum Oxide

Thin film Transistors

TFT

Electrolytic Solution

Electrical Characterization

Transfer Curve

Drain Source Current

Electrical Mobility

Placket Burman Design

Experimental Runs

Gate Dielectric Layer

Chapters in this video

0:00

Introduction

2:48

Preparation of the Electrolytic Solution

3:55

Substrate Cleaning

5:24

Al Gate Electrode Evaporation

6:31

Anodization of the Al Layer

7:41

ZnO Active Layer Deposition

8:38

Drain and Source Electrodes Deposition

9:36

TFT Electrical Characterization

10:09

Results

11:22

Conclusion

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