RSC thanks the support of the National Science Council (NSC) of Taiwan under Project NSC 102-2112-M-011-001-MY3. YSH acknowledges the support of the NSC of Taiwan under Project NSC 100-2112-M-011-001-MY3.

<ol>
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The authors have nothing to disclose.

تحديد دقيق لقيمة σ والاعتماد بعدها في البلورات النانوية طبقة يعتمد بشكل كبير على جودة الاتصالات الكهربائية. طريقة ترسب الاكذوبه استخدامها لترسيب المعدن الكهربائي لعبت دورا حاسما في كل مراحل الدراسة. وفقا لالكهربائية، ويحلل الهيكلي، والتكوين، وتلفيق من الاتصا...

dichalcogenides الانتقال المعدنية (TMDS)، مثل موس 2، موس 2، WS 2، وWSE 2، لديها ثنائي الأبعاد (2D) بنية الطبقة مثيرة للاهتمام وخصائص شبه الموصلة 1-3. لقد اكتشف العلماء مؤخرا أن هيكل أحادي الطبقة من MOS 2 يظهر تحسينات كبيرة في كفاءة الباعثة للضوء بسبب تأثير الحبس الكم. وقد اجتذب هذا الاكتشاف من المواد الجديدة أشباه الموصلات ذات فجوة الحزمة المباشرة اهتماما كبيرا 4-7. وبالإضافة إلى ذلك، فإن هيكل طبقة تجريد بسهولة من TMDS هو منصة ممتازة لدراسة الخصائص الأساسية للمواد 2D. على عكس الجرافين المعدني دون فجوة الحزمة، TMDS لها خصائص شبه الموصلة الكامنة ولها فجوة نطاقها في حدود 1-2 فولت 1،3،8. الهياكل 2D من المركبات ثلاثية من TMDS 9 و إمكانية دمج هذه المركبات مع الجرافين توفر مقابل غير مسبوقortunity لتطوير الأجهزة الإلكترونية سامسونج ومرنة. على عكس الجرافين، القيم التنقل درجة حرارة الغرفة الإلكترون من 2D TMDS هي بمستوى صوت معتدل (1-200 سم 2 V - 1 ثانية - 1 لموس 10-17 فبراير، ما يقرب من 50 سم 2 V - 1 ثانية - 1 لموسي 2 18 ). تم الإبلاغ عن القيم التنقل المثلى من الجرافين لتكون أعلى من 10000 سم 2 V - 1 ثانية - 19-21 يناير على الرغم من ذلك، الطبقات الوحيدة TMD شبه الموصلة يحمل أداء الجهاز ممتازة. على سبيل المثال، والطبقات الوحيدة MOS 2 و 2 موز أو متعدد الطبقات حقل التأثير الترانزستور المعرض عالية للغاية على / قبالة نسب تصل إلى 10 6 -10 9 10،12،17،18،22. لذلك، لا بد من فهم الخواص الكهربائية الأساسية لل2D TMDS والمواد السائبة الأشعة تحت الحمراء. ومع ذلك، فقد تعرقلت الدراسات من الخواص الكهربائية للمواد طبقة جزئيا بسبب صعوبة في تشكيل الاتصال أومية جيد على بلورات طبقة. ثلاثة مناهج، ترسب قناع الظل (SMD) 23، شعاع الإلكترون الطباعة الحجرية (EBL) 24،25، والتي تركز أيون شعاع (الاكذوبه) الترسيب، وقد استخدمت 26،27 لتشكيل الاتصالات الكهربائية على المواد متناهية الصغر. لأن مصلحة الارصاد الجوية عادة ما ينطوي على استخدام الشبكة النحاسية كقناع، والتباعد بين قطبين الاتصال هو في الغالب أكبر من 10 ميكرون. على عكس EBL والاكذوبه الترسيب، ويتم تنفيذ ترسب المعادن صفائف الكهربائي على ركيزة دون استهداف أو اختيار المواد النانوية من الفائدة في الأسلوب مصلحة الارصاد الجوية. هذا النهج لا يمكن أن يضمن أن أنماط معدنية تترسب بشكل صحيح على المواد النانوية الفردية والأقطاب. نتيجة للأسلوب مصلحة الارصاد الجوية لديها عنصر الصدفة. وتستخدم أساليب ترسب EBL والاكذوبه فيالمجهر الإلكتروني الماسح (SEM) النظام؛ المواد النانوية ويمكن ملاحظة مباشرة واختيار لترسب الكهربائي. بالإضافة إلى ذلك، EBL يمكن استخدامها لصنع بسهولة أقطاب معدنية مع خط العرض والاتصال الكهربائي تباعد أصغر من 100 نانومتر. ومع ذلك، فإن المتبقي مقاومة على سطح المواد متناهية الصغر اليسار أثناء الطباعة الحجرية يؤدي حتما إلى تشكيل طبقة عازلة بين القطب المعادن والمواد متناهية الصغر. وهكذا، EBL يؤدي إلى مقاومة اتصال عالية. والميزة الرئيسية لتصنيع الكهربائي من خلال الاكذوبه ترسب هو أنه يؤدي إلى انخفاض المقاومة للإتصال به. لأنه يتم تنفيذ ترسب المعادن من قبل التحلل من السلائف العضويه باستخدام شعاع أيون في منطقة محددة، وترسب المعادن والأيونات القصف تحدث في وقت واحد. هذا يمكن أن تدمر واجهة معدنية أشباه الموصلات ومنع تشكيل شوتكي للإتصال به. يمكن ايون القصف أيضا القضاء على الملوثات السطحية مثل HYDROCARالحلوى وأكاسيد الأم، مما يقلل مقاومة للإتصال به. وقد تجلى أومية تلفيق الاتصال من خلال الاكذوبه ترسب المواد النانوية مختلفة 27-29. وبالإضافة إلى ذلك، فإن الإجراء تلفيق كامل في النهج ترسب الاكذوبه هو أبسط من ذلك في EBL. كما تظهر أشباه الموصلات طبقة عادة التوصيل الكهربائي متباين للغاية، والتوصيل في الاتجاه طبقة إلى طبقة هو عدة أوامر من حجم أقل من ذلك في الاتجاه في الطائرة 30،31. هذه الخاصية تزيد من صعوبة افتعال الاتصالات أومية وتحديد التوصيل الكهربائي. لذلك، في هذه الدراسة، تم استخدام الاكذوبه ترسب لدراسة الخواص الكهربائية للالنانو طبقة أشباه الموصلات.

<table>
	<tbody>
		<tr>
			<td>HRTEM&#38;SEAD</td>
			<td>FEI (http://www.fei.com/products/tem/tecnai-g2/?ind=MS)</td>
			<td>Tecnai&#8482; G2 F-20</td>
			<td></td>
		</tr>
		<tr>
			<td>SEM&#38;EDS</td>
			<td>HITACHI (http://www.hitachi-hitec.com/global/em/sem/sem_index.html)</td>
			<td>S-3000H</td>
			<td></td>
		</tr>
		<tr>
			<td>FIB</td>
			<td>FEI (http://www.fei.com/products/dualbeam/versa-3d/)</td>
			<td>Quanta 3D FEG</td>
			<td></td>
		</tr>
		<tr>
			<td>AFM</td>
			<td>BRUKER (http://www.bruker.com/products/surface-analysis/atomic-force-microscopy/dimension-icon/overview.html)</td>
			<td>Dimension Icon</td>
			<td></td>
		</tr>
		<tr>
			<td>XRD</td>
			<td>Bruker (https://www.bruker.com/products/x-ray-diffraction-and-elemental-analysis/x-ray-diffraction/d2-phaser/learn-more.html)</td>
			<td>D2 PHASER X-ray Diffractometer</td>
			<td></td>
		</tr>
		<tr>
			<td>Raman</td>
			<td>Renishaw (http://www.renishaw.com/en/renishaw-enhancing-efficiency-in-manufacturing-and-healthcare--1030)</td>
			<td>inVia Raman microscope system</td>
			<td></td>
		</tr>
		<tr>
			<td>Keithley-4200</td>
			<td>keithley (http://www.keithley.com.tw/products/dcac/currentvoltage/4200scs)</td>
			<td>4200scs</td>
			<td></td>
		</tr>
		<tr>
			<td>ultralow current leakage cryogenic probe station</td>
			<td>Lakeshore Cryotronics (http://www.lakeshore.com/)</td>
			<td>TTP4</td>
			<td></td>
		</tr>
		<tr>
			<td>copper foil tape</td>
			<td>3M (http://solutions.3m.com/wps/portal/3M/en_US/Electronics_NA/Electronics/Products/Product_Catalog/~/3M-Copper-Foil-Shielding-Tape-1182?N=4294300025+5153906&#38;&#38;Nr=AND%28hrcy_id%3A8CQ27CX0WMgs_F2LMWMM6M6_N2RL3FHWVK_GPD0K8BC31gv%29&#38;rt=d)</td>
			<td>1182</td>
			<td></td>
		</tr>
		<tr>
			<td>Ag paste</td>
			<td>Well-Being (http://www.gredmann.com/about.htm)</td>
			<td>MS-5000</td>
			<td></td>
		</tr>
		<tr>
			<td>Cu wire</td>
			<td>Guv Team (http://www.guvteam.com)</td>
			<td>ICUD0D01N</td>
			<td></td>
		</tr>
		<tr>
			<td>dicing tape</td>
			<td>Nexteck (http://www.nexteck-corp.com/tw/product-tape.html)</td>
			<td>contact vender</td>
			<td></td>
		</tr>
		<tr>
			<td>mica</td>
			<td>Centenary Electronic (http://100y.diytrade.com/sdp/307600/4/pl-1175840/0.html)</td>
			<td>T0-200</td>
			<td></td>
		</tr>
		<tr>
			<td>enamel wire</td>
			<td>Light-Tech Electronics (http://www.ltc.com.tw/product_info.php/products_id/57631)</td>
			<td>S.W.G #38</td>
			<td></td>
		</tr>
	</tbody>
</table>

ohmic contact fabrication using a focused-ion beam technique and electrical characterization for layer semiconductor nanostructures

أشباه الموصلات طبقة مع معالجتها بسهولة ثنائية الأبعاد (2D) هياكل يحمل التحولات فجوة الحزمة غير المباشرة، لمباشرة والأداء الترانزستور متفوقة، والتي تشير إلى اتجاه جديد لتطوير الجيل القادم من سامسونج والأجهزة الضوئية والإلكترونية مرنة. وقد لوحظ على نطاق واسع تعزيز كفاءة التلألؤ الكم في هذه البلورات 2D رقيقة بالذرة. ومع ذلك، آثار البعد وراء سمك الحبس الكم أو حتى على نطاق ميكرومتر لا يتوقع ونادرا ما لوحظ. في هذه الدراسة، ثنائي سيلينيت الموليبدينوم (موس 2) طبقة البلورات مع مجموعة سمك 6-2،700 نانومتر ملفقة كما سنتين أو الأجهزة الطرفية أربع سنوات. وقد تحقق تشكيل الاتصال أومية بنجاح للتركيز أيون شعاع (الاكذوبه) طريقة الترسيب باستخدام البلاتين (حزب العمال) كمعدن للإتصال به. أعدت بلورات طبقة مع مختلف السماكات من خلال تقشير ميكانيكية بسيطة باستخدام الشريط التكعيب. الجهد الحالي measuremen منحنىوأجريت البحوث لتحديد قيمة التوصيل من البلورات النانوية طبقة. وبالإضافة إلى ذلك، وارتفاع القرار المجهر الإلكتروني النافذ، واستخدمت في منطقة مختارة حيود الإلكترون، والتشتت للطاقة الطيفي للأشعة السينية لتحديد خصائص واجهة للاتصال معادن أشباه الموصلات من موسي 2 أجهزة ملفقة الاكذوبه. بعد تطبيق النهج، وقد لوحظ الموصلية كبير تعتمد على سمك الكهربائي في مجموعة وسمك واسعة للطبقة أشباه الموصلات موسي 2. ارتفع الموصلية من قبل أكثر من عقدين من أوامر من حجم من 4.6 إلى 1500 Ω - 1 سم - 1، مع انخفاض في سمك من 2700 إلى 6 نانومتر. وبالإضافة إلى ذلك، أشار الموصلية التي تعتمد على درجة الحرارة التي رقيقة موسي 2 متعددة الطبقات أظهرت ضعف إلى حد كبير سلوك شبه موصلة مع الطاقات تفعيل 3،5-8،5 إلكترون فولت، التي هي أصغر بكثير من تلك (36-38 إلكترون فولت) من الجزء الأكبر. بروباويقترح خصائص النقل سطح المهيمن بلي وجود تركيز الإلكترون سطح عالية في موس 2. يمكن الحصول على نتائج مشابهة لغيرها من المواد طبقة أشباه الموصلات مثل موس 2 و WS 2.

قيم العزم للتصرف الكهربائية (G) والتوصيل (σ) للمواد النانوية مع طبقة سمك مختلفة تعتمد اعتمادا كبيرا على جودة الاتصالات الكهربائية. الاتصالات أومية من موسي-محطة مصنعان FIB-ترسب تتميز الأجهزة 2 عن طريق قياس الجهد الحالي (I - V) منحنى. وتظهر منحنيات V ...

Watch this Scientific Journal Video about Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures at JoVE.com

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

We describe the approaches for the device fabrication and electrical characterization of molybdenum diselenide (MoSe2) layer semiconductor nanostructures with different thicknesses. In addition, the fabrication of ohmic contacts for MoSe2-layer nanocrystals by the focused-ion beam deposition method using platinum (Pt) as a contact metal is described.

أومية الاتصال التصنيع باستخدام تقنية تركز أيون شعاع وتوصيف الكهربائية للطبقة أشباه الموصلات النانوية

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor ...

ohmic-contact-fabrication-using-focused-ion-beam-technique-electrical

Research

JoVE Journal

Engineering

12.2K Views.  National Taiwan University of Science and Technology. We describe the approaches for the device fabrication and electrical characterization of molybdenum diselenide (MoSe2) layer semiconductor nanostructures with different thicknesses. In addition, the fabrication of ohmic contacts for MoSe2-layer nanocrystals by the focused-ion beam deposition method using platinum (Pt) as a contact metal is described. 

Video: Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

In this video article we present a detailed demonstration of a highly efficient method for generating terahertz waves. Our technique is based on photoconduction, which has been one of the most commonly used techniques for terahertz generation 1-8. Terahertz generation in a photoconductive emitter is achieved by pumping an ultrafast photoconductor with a pulsed or heterodyned laser illumination. The induced photocurrent, which follows the envelope of the pump laser, is routed to a terahertz radiating antenna connected to the photoconductor contact electrodes to generate terahertz radiation. Although the quantum efficiency of a photoconductive emitter can theoretically reach 100%, the relatively long transport path lengths of photo-generated carriers to the contact electrodes of conventional photoconductors have severely limited their quantum efficiency. Additionally, the carrier screening effect and thermal breakdown strictly limit the maximum output power of conventional photoconductive terahertz sources. To address the quantum efficiency limitations of conventional photoconductive terahertz emitters, we have developed a new photoconductive emitter concept which incorporates a plasmonic contact electrode configuration to offer high quantum-efficiency and ultrafast operation simultaneously. By using nano-scale plasmonic contact electrodes, we significantly reduce the average photo-generated carrier transport path to photoconductor contact electrodes compared to conventional photoconductors 9. Our method also allows increasing photoconductor active area without a considerable increase in the capacitive loading to the antenna, boosting the maximum terahertz radiation power by preventing the carrier screening effect and thermal breakdown at high optical pump powers. By incorporating plasmonic contact electrodes, we demonstrate enhancing the optical-to-terahertz power conversion efficiency of a conventional photoconductive terahertz emitter by a factor of 50 10.

We describe methods for the design, fabrication, and experimental characterization of plasmonic photoconductive emitters, which offer two orders of magnitude higher terahertz power levels compared to conventional photoconductive emitters.

تصميم وتصنيع، والتجريبية توصيف Plasmonic بواعث تيراهيرتز موصل كهربائي بفعل الضوء

In this video article we present a detailed demonstration of a highly efficient method for generating terahertz waves. Our technique is based on ...

Fabrication and Characterization of Disordered Polymer Optical Fibers for Transverse Anderson Localization of Light

We develop and characterize a disordered polymer optical fiber that uses transverse Anderson localization as a novel waveguiding mechanism. The developed polymer optical fiber is composed of 80,000 strands of poly (methyl methacrylate) (PMMA) and polystyrene (PS) that are randomly mixed and drawn into a square cross section optical fiber with a side width of 250 &mu;m. Initially, each strand is 200 &mu;m in diameter and 8-inches long. During the mixing process of the original fiber strands, the fibers cross over each other; however, a large draw ratio guarantees that the refractive index profile is invariant along the length of the fiber for several tens of centimeters. The large refractive index difference of 0.1 between the disordered sites results in a small localized beam radius that is comparable to the beam radius of conventional optical fibers. The input light is launched from a standard single mode optical fiber using the butt-coupling method and the near-field output beam from the disordered fiber is imaged using a 40X objective and a CCD camera. The output beam diameter agrees well with the expected results from the numerical simulations. The disordered optical fiber presented in this work is the first device-level implementation of 2D Anderson localization, and can potentially be used for image transport and short-haul optical communication systems.

We develop and characterize a disordered polymer optical fiber that uses transverse Anderson localization as a novel waveguiding mechanism. This microstructured fiber can transport a small localized beam with a radius that is comparable to the beam radius of conventional optical fibers.

تصنيع وتوصيف المختلين بوليمر ألياف البصرية لعرضية أندرسون توطين الضوء

We develop and characterize a disordered polymer optical fiber that uses transverse Anderson localization as a novel waveguiding mechanism. The developed ...

Writing and Low-Temperature Characterization of Oxide Nanostructures

Oxide nanoelectronics is a rapidly growing field which seeks to develop novel materials with multifunctional behavior at nanoscale dimensions. Oxide interfaces exhibit a wide range of properties that can be controlled include conduction, piezoelectric behavior, ferromagnetism, superconductivity and nonlinear optical properties. Recently, methods for controlling these properties at extreme nanoscale dimensions have been discovered and developed. Here are described explicit step-by-step procedures for creating LaAlO3/SrTiO3 nanostructures using a reversible conductive atomic force microscopy technique. The processing steps for creating electrical contacts to the LaAlO3/SrTiO3 interface are first described. Conductive nanostructures are created by applying voltages to a conductive atomic force microscope tip and locally switching the LaAlO3/SrTiO3 interface to a conductive state. A versatile nanolithography toolkit has been developed expressly for the purpose of controlling the atomic force microscope (AFM) tip path and voltage. Then, these nanostructures are placed in a cryostat and transport measurements are performed. The procedures described here should be useful to others wishing to conduct research in oxide nanoelectronics.

Oxide nanostructures provide new opportunities for science and technology. The interfacial conductivity between LaAlO3 and SrTiO3 can be controlled with near-atomic precision using a conductive atomic force microscopy technique. The protocol for creating and measuring conductive nanostructures at LaAlO3/SrTiO3 interfaces is demonstrated.

الكتابة وانخفاض درجة الحرارة توصيف أكسيد النانو

Oxide nanoelectronics is a rapidly growing field which seeks to develop novel materials with multifunctional behavior at nanoscale dimensions.  Oxide ...

Patterning via Optical Saturable Transitions - Fabrication and Characterization

This protocol describes the fabrication and characterization of nanostructures using a novel nanolithographic technique called Patterning via Optical Saturable Transitions (POST). In this technique the chemical properties of organic photochromic molecules that undergo single-photon reactions are exploited, enabling rapid top-down nanopatterning over large areas at low light intensities, thereby, allowing for the circumvention of the far-field diffraction barrier.4 Simple, cost-effective, high throughput and resolution alternatives to nanopatterning are being explored, such as, two-photon polymerization5,6, beam pen lithography (BPL)7, scanning electron beam lithography (SEBL), and focused ion beam (FIB) patterning. However, multi-photon approaches require high light intensities, which limit their potential for high throughput and offer low image contrast. Although, electron and ion beam lithographic processes offer increased resolution, the serial nature of the process is limited to slow writing speeds, which also prevents patterning of features over large areas. Beam-pen lithography is an approach towards parallel near-field optical lithography. However, the gap between the source of the beam and the surface of the photoresist needs to be controlled extremely precisely for good pattern uniformity and this is very challenging to accomplish for large arrays of beams. Patterning via Optical Saturable Transitions (POST) is an alternative optical nanopatterning technique for patterning sub-wavelength features1-3. Since this technique uses single photons instead of electrons, it is extremely fast and does not require high light intensities1-3, opening the door to massive parallelization.

We report that the diffraction limit of conventional optical lithography can be overcome by exploiting the transitions of organic photochromic derivatives induced by their photoisomerization at low light intensities.1-3 This paper outlines our fabrication technique and two locking mechanisms, namely: dissolution of one photoisomer and electrochemical oxidation.

الزخرفة عبر البصرية تشبع انتقالات - تصنيع وتوصيف

This protocol describes the fabrication and characterization of nanostructures using a novel nanolithographic technique called Patterning via Optical ...

Fabrication and Operation of a Nano-Optical Conveyor Belt

The technique of using focused laser beams to trap and exert forces on small particles has enabled many pivotal discoveries in the nanoscale biological and physical sciences over the past few decades. The progress made in this field invites further study of even smaller systems and at a larger scale, with tools that could be distributed more easily and made more widely available. Unfortunately, the fundamental laws of diffraction limit the minimum size of the focal spot of a laser beam, which makes particles smaller than a half-wavelength in diameter hard to trap and generally prevents an operator from discriminating between particles which are closer together than one half-wavelength. This precludes the optical manipulation of many closely-spaced nanoparticles and&#160;limits the&#160;resolution of optical-mechanical systems. Furthermore, manipulation using focused beams requires beam-forming or steering optics, which can be very bulky and expensive. To address these limitations in the system scalability of conventional optical trapping our lab has devised an alternative technique which utilizes near-field optics to move particles across a chip. Instead of focusing laser beams in the far-field, the optical near field of plasmonic resonators produces the necessary local optical intensity enhancement to overcome the restrictions of diffraction and manipulate particles at higher resolution. Closely-spaced resonators produce strong optical traps which can be addressed to mediate the hand-off of particles from one to the next in a conveyor-belt-like fashion. Here, we describe how to design and produce a conveyor belt using a gold surface patterned with plasmonic C-shaped resonators and how to operate it with polarized laser light to achieve super-resolution nanoparticle manipulation and transport. The nano-optical conveyor belt chip can be produced using lithography techniques and easily packaged and distributed.

The scalability and resolution of conventional optical manipulation techniques are limited by diffraction. We circumvent the diffraction limit and describe a method of optically transporting nanoparticles across a chip using a gold surface patterned with a path of closely spaced C-shaped plasmonic resonators.

تصنيع وتشغيل الحزام الناقل النانو البصرية

The technique of using focused laser beams to trap and exert forces on small particles has enabled many pivotal discoveries in the nanoscale biological ...

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

السيليكون المعدنية أكسيد أشباه الموصلات الكم النقاط لالضخ وحيد الإلكترون

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.

توصيف شامل العيوب الممتدة في المواد أشباه الموصلات من خلال مجهر المسح الإلكتروني

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications ...

Focused Ion Beam Fabrication of LiPON-based Solid-state Lithium-ion Nanobatteries for In Situ Testing

Solid-state electrolytes are a promising replacement for current organic liquid electrolytes, enabling higher energy densities and improved safety of lithium-ion (Li-ion) batteries. However, a number of setbacks prevent their integration into commercial devices. The main limiting factor is due to nanoscale phenomena occurring at the electrode/electrolyte interfaces, ultimately leading to degradation of battery operation. These key problems are highly challenging to observe and characterize as these batteries contain multiple buried interfaces. One approach for direct observation of interfacial phenomena in thin film batteries is through the fabrication of electrochemically active nanobatteries by a focused ion beam (FIB). As such, a reliable technique to fabricate nanobatteries was developed and demonstrated in recent work. Herein, a detailed protocol with a step-by-step process is presented to enable the reproduction of this nanobattery fabrication process. In particular, this technique was applied to a thin film battery consisting of LiCoO2/LiPON/a-Si, and has further been previously demonstrated by in situ cycling within a transmission electron microscope.

Focused Ion Beam Fabrication of LiPON-based Solid-state Lithium-ion Nanobatteries for In Situ Testing

A protocol for the fabrication of electrochemically active LiPON-based solid-state lithium-ion nanobatteries using a focused ion beam is presented.

تركيز أيون شعاع تلفيق نانوباتيريس ليبون-على أساس الحالة الصلبة بطارية ليثيوم أيون للاختبار في الموقع

Solid-state electrolytes are a promising replacement for current organic liquid electrolytes, enabling higher energy densities and improved safety of ...

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Tin selenide (SnSe) belongs to the family of layered metal chalcogenide materials with a buckled structure like phosphorene, and has shown potential for applications in two-dimensional nanoelectronics devices. Although many methods to synthesize SnSe nanocrystals have been developed, a simple way to fabricate large-sized single-layer SnSe flakes remains a great challenge. Herein, we show the experimental method to directly grow large-sized single-layer rectangular SnSe flakes on commonly used SiO2/Si insulating substrates using a straightforward two-step fabrication method in an atmospheric pressure quartz tube furnace system. The single-layer rectangular SnSe flakes with an average thickness of ~6.8 &#197; and lateral dimensions of about 30 &#181;m &#215; 50 &#181;m were fabricated by a combination of vapor transport deposition technique and nitrogen etching route. We characterized the morphology, microstructure, and electrical properties of the rectangular SnSe flakes and obtained excellent crystallinity and good electronic properties. This article about the two-step fabrication method can help researchers grow other similar two-dimensional, large-sized, single-layer materials using an atmospheric pressure system.

A protocol is presented demonstrating a two-step fabrication technique to grow large-sized single-layer rectangular shaped SnSe flakes on low-cost SiO2/Si dielectrics wafers in an atmospheric pressure quartz tube furnace system.

الضغط الجوي تصنيع رقائق سنسي مستطيلة طبقة واحدة كبيرة الحجم

Tin selenide (SnSe) belongs to the family of layered metal chalcogenide materials with a buckled structure like phosphorene, and has shown potential for ...

Fabrication of Magnetic Nanostructures on Silicon Nitride Membranes for Magnetic Vortex Studies Using Transmission Microscopy Techniques

Electron and x-ray magnetic microscopies allow for high-resolution magnetic imaging down to tens of nanometers. However, the samples need to be prepared on transparent membranes which are very fragile and difficult to manipulate. We present processes for the fabrication of samples with magnetic micro- and nanostructures with spin configurations forming magnetic vortices suitable for Lorentz transmission electron microscopy and magnetic transmission x-ray microscopy studies. The samples are prepared on silicon nitride membranes and the fabrication consists of a spin coating, UV and electron-beam lithography, the chemical development of the resist, and the evaporation of the magnetic material followed by a lift-off process forming the final magnetic structures. The samples for the Lorentz transmission electron microscopy consist of magnetic nanodiscs prepared in a single lithography step. The samples for the magnetic x-ray transmission microscopy are used for time-resolved magnetization dynamic experiments, and magnetic nanodiscs are placed on a waveguide which is used for the generation of repeatable magnetic field pulses by passing an electric current through the waveguide. The waveguide is created in an extra lithography step.

A protocol for the fabrication of magnetic micro- and nanostructures with spin configurations forming magnetic vortices suitable for transmission electron microscopy (TEM) and magnetic transmission x-ray microscopy (MTXM) studies is presented.

تصنيع النانو المغناطيسية في أغشية نيتريد السيليكون لدراسات دوامة مغناطيسية باستخدام تقنيات الفحص المجهري الإرسال

Electron and x-ray magnetic microscopies allow for high-resolution magnetic imaging down to tens of nanometers. However, the samples need to be prepared ...