作者要感谢瑞安东为他的帮助和有用的技术讨论。 作者还希望承认Birck纳米技术中心的技术人员的协助和支持。这项工作是由美国国防高级研究计划局在普渡微波可重构倏逝模式腔体滤波器支持的研究。并且还通过可靠性，完整性和微生存能力和能源部的预测下，大奖号DE-FC5208NA28617国家核安全局中心。的观点，意见，和/或本文件所载/简报调查结果仅代表作者本人/主持人，不应该被解释为代表官方的观点或政策，任何明示或暗示，美国国防部高级研究计划局或部国防部。

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作者什么都没有透露。

低残余应力Au膜的沉积和干燥的释放与XeF的2个在该装置的制造成功至关重要的组件。时相比，平行板场致动器静电边缘场致动器提供相对低的力。 &gt; 60兆帕典型的MEMS薄膜应力将导致过高的驱动电压，其可以潜在地危及EFFA MEMS的可靠性。由于这个原因，电镀配方仔细特征在于，得到的薄膜具有低的双向轴向平均应力。此外，在本研究中，需要热循环的处理步骤使用硅作为牺牲层的类型，?...

微机电系统（MEMS）利用几个致动机构来实现机械位移。最流行的是热，压电，磁和静电。对于短的切换时间，静电致动是最流行 ​​的技术1，2。在实际应用中，临界阻尼的机械设计提供初始上升时间和稳定时间之间的最佳折衷。在施加直流偏压和致动膜片向下朝下拉电极，所述沉降时间是不是一个显著问题作为膜将抓拍下来并粘附到介电涂层的致动电极。几个应用都得益于上述静电驱动设计3 - 8。然而，电介质涂覆的下拉电极的存在下，使致动器易于介电充电和静摩擦。 MEMS膜可以利用一条underdamped机械设计，实现了快速的初始上升时间。欠阻尼的机械设计的一个例子是静电边缘场致动（EFFA）的MEMS。这种拓扑结构中表现出了远远低于易受困扰静电基础的设计9-20典型的失效机理。不存在平行对置电极，因此在平行电场的是为什么这些MEMS被适当地称为“边缘场”致动（ 图1）。为EFFA设计，​​下拉电极被分成两个单独的电极被定位侧向偏移到所述移动膜，完全消除了装置的可动部件和固定部件之间的重叠。然而，从可动膜下方的去除衬底显著降低了挤压膜阻尼部件从而增加了稳定时间。 图2B是所述沉降时间响应于STANDAR一例D的步骤偏置。瞬态，或直流动力施加在实时的偏压可用于提高所述沉降时间20-26。 图2C和2D定性地说明了如何随时间变化的波形可以有效地消除振铃。以前的研究工作，利用数值计算方法来计算输入偏压的精确的电压和定时，以改善切换时间。这项工作的方法使用紧凑型封闭形式的表达式来计算输入偏置波形参数。此外，以前的工作集中在平行板驱动。而这些结构体被设计成欠阻尼的，挤压膜阻尼仍然在此配置中可用。在这项工作中提出的致动方法是边缘场致动。在此配置中挤压膜阻尼被有效地消除。这代表了一种极端的情况下，所述MEMS束的机械阻尼是非常低的。本文介绍了如何制作的EFFA的MEMS开发冰和执行测量以实验验证了波形的概念。

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	<tbody>
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			<td height="21" style="height:21px;width:251px;">Chemical</td>
			<td style="width:163px;">Company</td>
			<td style="width:137px;">Catalogue number</td>
			<td style="width:195px;">Comments (optional)</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Buffered oxide etchant</td>
			<td>Mallinckrodt Baker</td>
			<td>1178</td>
			<td>Silicon dioxide etch, Ti etch</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Acetone</td>
			<td>Mallinckrodt Baker</td>
			<td>5356</td>
			<td>wafer clean</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Isopropyl alcohol</td>
			<td>Honeywell</td>
			<td>BDH-140</td>
			<td>wafer clean</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Hexamethyldisilizane</td>
			<td>Mallinckrodt Baker</td>
			<td>5797</td>
			<td>adhesion promoter</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Microposit SC 1827 Positive Photoresist</td>
			<td>Shipley Europe Ltd</td>
			<td>44090</td>
			<td>Pattern, electroplating</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Microposit MF-26A developer</td>
			<td>Shipley Europe Ltd</td>
			<td>31200</td>
			<td>Develop SC 1827</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Tetramethylammonium hydroxide</td>
			<td>Sigma-Aldrich</td>
			<td>334901</td>
			<td>Bulk Si etch</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Hydrofluroic acid</td>
			<td>Sciencelab.com</td>
			<td>SLH2227</td>
			<td>Silicon dioxide etch</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Sulfuric acid</td>
			<td>Sciencelab.com</td>
			<td>SLS2539</td>
			<td>wafer clean</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Hydrogen peroxide</td>
			<td>Sciencelab.com</td>
			<td>SLH1552</td>
			<td>Wafer clean</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Transene Sulfite Gold TSG-250</td>
			<td>Transense</td>
			<td>110-TSG-250</td>
			<td>Au electroplating solution</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Baker PRS-3000 Positive Resist Stripper</td>
			<td>Mallinckrodt Baker</td>
			<td>6403</td>
			<td>Photoresist stripper</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Gold etchant type TFA</td>
			<td>Transense</td>
			<td>060-0015000</td>
			<td>Au etch</td>
		</tr>
	</tbody>
</table>

real-time dc-dynamic biasing method for switching time improvement in severely underdamped fringing-field electrostatic mems actuators

机械欠静电边缘场的MEMS致动器响应于一个单位阶跃输入偏置电压众所周知的快速切换操作。然而，在权衡了改进的开关性能是一个相对长的稳定时间，以达到每个间隙高度响应于各种应用的电压。瞬时偏压波形用来帮助减少开关次数静电边缘场MEMS致动器具有高的机械品质因数。去除边缘场致动器的底部衬底将创建的低机械阻尼环境必要有效测试的概念。下层基板的除去也有在装置的问候失败由于静摩擦的可靠性性能显着改善。虽然直流偏置动力是提高稳定时间是有用的，所需的压摆率典型的MEMS器件可以放置在充电p咄咄逼人的要求UMPS的完全集成的芯片设计。此外，可能存在挑战整合基板去除步骤到后端-行的商业的CMOS处理步骤。相比常规步骤施力结果制成致动器的实验验证表明了50倍的切换时间的改善。相较于理论计算，实验结果有较好的一致性。

图4中的设置是用来捕获偏转与微机电桥时代特征。通过使用在其连续测量模式下，激光多普勒振动计，精确的电压和时间的参数，可以发现以产生最小的光束的振动所期望的间隙高度， 图5示出了对应于60伏间隙高度，例如电子束偏转。可以看出，几乎所有的振荡的被除去。不仅是动态波形的一个间隙高度有用的，但对于所有的间隙尽可能的高度。这表现在图6</stro...

Watch this Scientific Journal Video about Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators at JoVE.com

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

当执行使用传统的一步偏置开关操作的边缘电场静电MEMS驱动器会导致固有的低挤压膜阻尼条件和长期稳定时间坚固的设备设计。实时的切换时间的改善，提供直流动态波形降低了边缘场的建立时间之间的转换时，MEMS致动器向上到向下和向下到向上的状态。

实时直流偏置的动态法切换时间改善严重欠阻尼边缘化场静电MEMS致动器

Mechanically underdamped electrostatic fringing-field MEMS actuators are well known for their fast switching operation in response to a unit step input ...

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10.2K 次观看.  University of California, Davis. 当执行使用传统的一步偏置开关操作的边缘电场静电MEMS驱动器会导致固有的低挤压膜阻尼条件和长期稳定时间坚固的设备设计。实时的切换时间的改善，提供直流动态波形降低了边缘场的建立时间之间的转换时，MEMS致动器向上到向下和向下到向上的状态。 