The authors would like to thank the Ministry of Science and Technology of Taiwan, for their financial support of this research under Contract Nos. MOST-102-2923-E-492- 001-MY3 (W. J. Lee) and NSC-102- 2112-M-005-003-MY3 (M. S. Ho). Support from the High-performance Computing of Taiwan in providing huge computing resources to facilitate this research is also gratefully acknowledged.

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Yazarlar ifşa hiçbir şey yok.

<html> Bu çalışmada, (Şekil 1), yeni bir tavlama işlemi ile Si alt-tabaka üzerinde Cı 84 bir kendi kendine bir araya tek tabaka imalat göstermektedir. Bu işlem, nanopartikül gömülü iletken yüzeyler başka türlü hazırlamak için de kullanılabilir. C 84 Si substrat UHV-STM (Şekil 2), saha emisyon spektrometresi, foto-ışıldama spektroskopisi, MFM ve SQUID (Şekil 3) kullanılarak atomik ölçekte karakterize edildi Gömülü. ...

Fulleren moleküller ve nedeniyle mükemmel yapısal özellikler, elektronik iletkenlik, mekanik mukavemet ve kimyasal özellikleri 1-4&#39;e de nano arasındaki ayırt edici ihtiva kompozit malzemeler. Bu malzemeler elektronik, bilgisayar, yakıt hücresi teknolojisi, güneş pilleri ve saha emisyon teknolojisi 5,6 gibi alanlarda, bir dizi son derece yararlı olduğu kanıtlanmıştır. Bu malzemeler arasında, silisyum karbür (SiC) nanoparçacık kompozitler, geniş bant boşluğu, yüksek ısı iletkenliği ve istikrar, yüksek elektrik arıza yeteneği, ve kimyasal eylemsizlik özellikle dikkat sayesinde aldık. Bu faydalar optoelektronik cihazlar özellikle açıktır, metal oksit yarıiletken alan etkili transistörler (MOSFET), ışık yayan diyotlar (LED&#39;ler) ve yüksek güç, yüksek frekans ve yüksek sıcaklık uygulamaları. Bununla birlikte, yüksek yoğunluklu kusurları yaygın Sözleşmenin yüzeyinde görülenÖnal silisyum karbür bile cihaz arızası 7,8 giden, elektronik yapısı üzerinde zararlı etkileri olabilir. SiC uygulaması 1960 yılından beri çalışılmıştır gerçeğine rağmen, bu özel çözümlenmemiş sorun olmaya devam etmektedir. Bu çalışmanın amacı, bir C 84 fabrikasyon sonuçlanan malzemelerin, elektronik optoelektronik, mekanik, manyetik, ve alan emisyon özelliklerinin kapsamlı bir anlayış elde etmek için Si substrat heteroeklem ve sonraki analizlere Gömülü oldu. Biz de moleküler dinamik hesaplamaları yeni uygulaması ile, nanomateryallerin özelliklerini tahmin etmek sayısal simülasyonu kullanarak sorunu ele.

<table><tbody><tr><td>Silicon wafer</td><td></td><td></td><td>Si(111). Type/Dopant: P/Boron; Resistivity: 0.05-0.1 Ohm&amp;#183;cm</td></tr><tr><td>Carbon, C&lt;sub&gt;84&lt;/sub&gt;</td><td>Legend Star</td><td></td><td>C&lt;sub&gt;84&lt;/sub&gt; powder, 98%</td></tr><tr><td>Hydrochloric acid</td><td>Sigma-Aldrich</td><td>84422</td><td>RCA, 37%</td></tr><tr><td>Ammonium</td><td>Choneye Pure Chemical</td><td></td><td>RCA, 25%</td></tr><tr><td>Hydrogen peroxide</td><td>Choneye Pure Chemical</td><td></td><td>RCA, 35%</td></tr><tr><td>Nitrogen</td><td>Ni Ni Air</td><td></td><td>high-pressure bottle, 95%</td></tr><tr><td>Tungsten</td><td>Nilaco</td><td>461327</td><td>wire, diameter 0.3 mm, tip</td></tr><tr><td>Sodium hydroxide</td><td>UCW</td><td>85765</td><td>etching Tungsten wire for tip</td></tr><tr><td>Acetone</td><td>Marcon Fine Chemicals</td><td>99920</td><td>suitable for liquid chromatography and UV-spectrophotometry</td></tr><tr><td>Methanol</td><td>Marcon Fine Chemicals</td><td>64837</td><td>suitable for liquid chromatography and UV-spectrophotometry</td></tr><tr><td>UHV-SPM</td><td>JEOL Ltd</td><td>JSPM-4500A</td><td>Ultrahigh Vacuum Scanning Tunneling Microscope and Ultrahigh Vacuum Atomic Force Microscope</td></tr><tr><td>Power supply</td><td>Keithley</td><td>237</td><td>High-Voltage Source-Measure Unit</td></tr><tr><td>SQUID</td><td>Quantum desigh</td><td>MPMS-7</td><td>Magnetic field strength: &amp;plusmn;7.0 Tesla, Temperature range: 2&amp;#8211;400 K, Magnetic-dipole range: 5&amp;nbsp;&amp;times;&amp;nbsp;10&lt;sup&gt;-7&lt;/sup&gt; &amp;#8211; 300 emu</td></tr><tr><td>ALPS</td><td>National Center for High-performance Computing, Taiwan</td><td></td><td>Advanced Large-scale Parallel Supercluster, 177Tflops; 25,600 CPU cores; 73,728 GB RAM; 1,074 TB storage</td></tr></tbody></table>

probing c84-embedded si substrate using scanning probe microscopy and molecular dynamics

Bu çalışma, bir dizi tasarlanmış Cı 84 Si substratı Gömülü bir ultra yüksek vakum odası içinde kontrollü bir kendi kendine montaj yöntemi kullanılarak imal bildirir. C 84 özellikleri, bu tür atom çözünürlüklü topoğrafya, devletlerin yerel elektronik yoğunluk, bant boşluk enerjisine, saha emisyon özelliklerinin, nanomekanik sertliği ve yüzey manyetizma olarak, Si yüzey Gömülü ultra altında yüzey analiz teknikleri kullanarak çeşitli incelendi yüksek vakum (UHV) koşullarının yanı sıra bir atmosfer sistemi. Deneysel sonuçlar C 84 yüksek tekdüzelik Si yüzey kontrollü bir öz-montaj nanoteknoloji mekanizmasını kullanarak, kesme aletleri alan emisyon ekran (FED), optoelektronik cihaz imalat, MEMS uygulanmasında önemli bir gelişmeyi temsil fabrikasyon Gömülü ve çabaları göstermek karbür yarı iletkenler için uygun bir yedek bulmak için. Yarı deneysel potansiyeli olan moleküler dinamik (MD) yöntemi olabilir bC 84 nanoindentation incelemek için kullanılan e Si substrat Gömülü. MD simülasyonunu yapmak için ayrıntılı bir açıklama sunulmuştur. Böyle girinti kuvveti, Young modülü, yüzey sertliği, atom stres ve atomik suşu olarak MD simülasyon mekanik analiz üzerine kapsamlı bir çalışma için ayrıntılar yer almaktadır. girinti modeli atom stres ve von Mises-gerinme dağılımları atomlarla düzeyde zaman değerlendirme ile deformasyon mekanizmasını izlemek için hesaplanabilir.

. Düzensiz Si (111) yüzeyi üzerinde Cı 84 moleküllerinin bir tek-tabakalı Şekil 1, bir UHV odasında kontrollü kendini montaj işlemi kullanılarak imal içerisinde değişik derecelerde UHV-STM tarafından ölçülen topografik görüntüleri bir dizi gösterilmektedir: (a) 0.01 mL, (b) 0.2 mL, (c) 0.7 mi, ve (d) 0.9 ml. C 84 gömülü Si substrat elektronik ve optik özellikleri aynı zamanda STM ve PL (Şekil 2) gibi yüzey analiz teknikleri, çeşitli k...

Watch this Scientific Journal Video about Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics at JoVE.com

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

This paper reports the nanomaterial fabrication of a fullerene Si substrate inspected and verified by nanomeasurements and molecular dynamic simulation.

C problama<sub&gt; 84</sub&gt; Taramalı Uç Mikroskobu ve Molecular Dynamics Kullanarak Si Maddesini Gömülü

This paper reports an array-designed C84-embedded Si substrate fabricated using a controlled self-assembly method in an ultra-high vacuum chamber. The ...

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Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

11.6K Görüntüleme.  National Chung Hsing University. This paper reports the nanomaterial fabrication of a fullerene Si substrate inspected and verified by nanomeasurements and molecular dynamic simulation.

Video: Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Scanning-probe Single-electron Capacitance Spectroscopy

The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the electronic quantum structure of small systems - including individual atomic dopants in semiconductors. Here we present a capacitance-based method, known as Subsurface Charge Accumulation (SCA) imaging, which is capable of resolving single-electron charging while achieving sufficient spatial resolution to image individual atomic dopants. The use of a capacitance technique enables observation of subsurface features, such as dopants buried many nanometers beneath the surface of a semiconductor material1,2,3. In principle, this technique can be applied to any system to resolve electron motion below an insulating surface.
As in other electric-field-sensitive scanned-probe techniques4, the lateral spatial resolution of the measurement depends in part on the radius of curvature of the probe tip. Using tips with a small radius of curvature can enable spatial resolution of a few tens of nanometers. This fine spatial resolution allows investigations of small numbers (down to one) of subsurface dopants1,2. The charge resolution depends greatly on the sensitivity of the charge detection circuitry; using high electron mobility transistors (HEMT) in such circuits at cryogenic temperatures enables a sensitivity of approximately 0.01 electrons/Hz&frac12; at 0.3 K 5.

Scanning-probe single-electron capacitance spectroscopy facilitates the study of single-electron motion in localized subsurface regions. A sensitive charge-detection circuit is incorporated into a cryogenic scanning probe microscope to investigate small systems of dopant atoms beneath the surface of semiconductor samples.

Tarama-prob Tek elektron Kapasite Spektroskopisi

The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the ...

Mühendislik

Quantitative and Qualitative Examination of Particle-particle Interactions Using Colloidal Probe Nanoscopy

Colloidal Probe Nanoscopy (CPN), the study of the nano-scale interactive forces between a specifically prepared colloidal probe and any chosen substrate using the Atomic Force Microscope (AFM), can provide key insights into physical interactions present within colloidal systems. Colloidal systems are widely existent in several applications including, pharmaceuticals, foods, paints, paper, soil and minerals, detergents, printing and much more.1-3 Furthermore, colloids can exist in many states such as emulsions, foams and suspensions. Using colloidal probe nanoscopy one can obtain key information on the adhesive properties, binding energies and even gain insight into the physical stability and coagulation kinetics of the colloids present within. Additionally, colloidal probe nanoscopy can be used with biological cells to aid in drug discovery and formulation development. In this paper we describe a method for conducting colloidal probe nanoscopy, discuss key factors that are important to consider during the measurement, and show that both quantitative and qualitative data that can be obtained from such measurements.

Colloidal probe nanoscopy can be used within a variety of fields to gain insight into the physical stability and coagulation kinetics of colloidal systems and aid in drug discovery and formulation sciences using biological systems. The method described within provides a quantitative and qualitative means to study such systems.

Kolloidal Probe Nanoscopy kullanarak parçacık-parçacık Etkileşimleri Nicel ve Nitel Sınav

Colloidal Probe Nanoscopy (CPN), the study of the nano-scale interactive forces between a specifically prepared colloidal probe and any chosen substrate ...

Kimya

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.

Bir Tarama Elektron Mikroskobu tarafından Yarıiletken Malzemelerin Genişletilmiş Kusur Kapsamlı Karakterizasyonu

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications ...

Hand Controlled Manipulation of Single Molecules via a Scanning Probe Microscope with a 3D Virtual Reality Interface

Considering organic molecules as the functional building blocks of future nanoscale technology, the question of how to arrange and assemble such building blocks in a bottom-up approach is still open. The scanning probe microscope (SPM) could be a tool of choice; however, SPM-based manipulation was until recently limited to two dimensions (2D). Binding the SPM tip to a molecule at a well-defined position opens an opportunity of controlled manipulation in 3D space. Unfortunately, 3D manipulation is largely incompatible with the typical 2D-paradigm of viewing and generating SPM data on a computer. For intuitive and efficient manipulation we therefore couple a low-temperature non-contact atomic force/scanning tunneling microscope (LT NC-AFM/STM) to a motion capture system and fully immersive virtual reality goggles. This setup permits &#34;hand controlled manipulation&#34; (HCM), in which the SPM tip is moved according to the motion of the experimenter&#39;s hand, while the tip trajectories as well as the response of the SPM junction are visualized in 3D. HCM paves the way to the development of complex manipulation protocols, potentially leading to a better fundamental understanding of nanoscale interactions acting between molecules on surfaces. Here we describe the setup and the steps needed to achieve successful hand-controlled molecular manipulation within the virtual reality environment.

We demonstrate the precise manipulation of individual organic molecules on a metal surface with the tip of a scanning probe microscope driven in 3D by the experimenter's hand using a motion capture system and fully immersive virtual reality goggles.

El 3D Sanal Gerçeklik Arayüzü ile bir Tarama Prob Mikroskobu üzerinden Tek Moleküllerin Manipülasyon Kontrollü

Considering organic molecules as the functional building blocks of future nanoscale technology, the question of how to arrange and assemble such building ...

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and forging. Adoption of this technique is proceeding despite disagreement concerning the underlying mechanism responsible for EAD. The experimental procedure described herein enables a more explicit study compared to previous EAD research by removing thermal effects, which are responsible for disagreement in interpreting previous EAD results. Furthermore, as the procedure described here enables EAD observation in situ and in real time in a transmission electron microscope (TEM), it is superior to existing post-mortem methods that observe EAD effects post-test. Test samples consist of a single crystal copper (SCC) foil having a free-standing tensile test section of nanoscale thickness, fabricated using a combination of laser and ion beam milling. The SCC is mounted to an etched silicon base that provides mechanical support and electrical isolation while serving as a heat sink. Using this geometry, even at high current density (~3,500 A/mm2), the test section experiences a negligible temperature increase (&#60;0.02 &#176;C), thus eliminating Joule heating effects. Monitoring material deformation and identifying the corresponding changes to microstructures, e.g. dislocations, are accomplished by acquiring and analyzing a series of TEM images. Our sample preparation and in situ experiment procedures are robust and versatile as they can be readily utilized to test materials with different microstructures, e.g., single and polycrystalline copper.

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Isolating electrical and thermal effects on electrically assisted deformation (EAD) is very difficult using macroscopic samples. Metallic sample micro- and nanostructures together with a custom test procedure have been developed to evaluate the impact of applied current on the formation without joule heating and evolution of dislocations on these samples.

Için yeni bir yöntem<em&gt; Yerinde</emNanoscale Örneklerinin Elektromekanik Karakterizasyonu

Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and ...

Characterizing Individual Protein Aggregates by Infrared Nanospectroscopy and Atomic Force Microscopy

The phenomenon of protein misfolding and aggregation results in the formation of highly heterogeneous protein aggregates, which are associated with neurodegenerative conditions such as Alzheimer&#8217;s and Parkinson&#8217;s diseases. In particular low molecular weight aggregates, amyloid oligomers, have been shown to possess generic cytotoxic properties and are implicated as neurotoxins in many forms of dementia. We illustrate the use of methods based on atomic force microscopy (AFM) to address the challenging task of characterizing the morphological, structural and chemical properties of these aggregates, which are difficult to study using conventional structural methods or bulk biophysical methods because of their heterogeneity and transient nature. Scanning probe microscopy approaches are now capable of investigating the morphology of amyloid aggregates with sub-nanometer resolution. We show here that infrared (IR) nanospectroscopy (AFM-IR), which simultaneously exploits the high resolution of AFM and the chemical recognition power of IR spectroscopy, can go further and enable the characterization of the structural properties of individual protein aggregates, and thus offer insights into the aggregation mechanisms. Since the approach that we describe can be applied also to the investigations of the interactions of protein assemblies with small molecules and antibodies, it can deliver fundamental information to develop new therapeutic compounds to diagnose or treat neurodegenerative disorders.

We describe the application of infrared nanospectroscopy and high-resolution atomic force microscopy to visualize the process of protein self-assembly into oligomeric aggregates and amyloid fibrils, which is closely associated with the onset and development of a wide range of human neurodegenerative disorders.

Bireysel Protein Agregalarının Kızılötesi Nanospektroskopi ve Atomik Kuvvet Mikroskobu ile Karakterizeleştirilmesi

The phenomenon of protein misfolding and aggregation results in the formation of highly heterogeneous protein aggregates, which are associated with ...

Biyokimya

Probing Surface Electrochemical Activity of Nanomaterials using a Hybrid Atomic Force Microscope-Scanning Electrochemical Microscope (AFM-SECM)

Scanning electrochemical microscopy (SECM) is used to measure the local electrochemical behavior of liquid/solid, liquid/gas and liquid/liquid interfaces. Atomic force microscopy (AFM) is a versatile tool to characterize micro- and nanostructure in terms of topography and mechanical properties. However, conventional SECM or AFM provides limited laterally resolved information on electrical or electrochemical properties at nanoscale. For instance, the activity of a nanomaterial surface at crystal facet levels is difficult to resolve by conventional electrochemistry methods. This paper reports the application of a combination of AFM and SECM, namely, AFM-SECM, to probe nanoscale surface electrochemical activity while acquiring high-resolution topographical data. Such measurements are critical to understanding the relationship between nanostructure and reaction activity, which is relevant to a wide range of applications in material science, life science and chemical processes. The versatility of the combined AFM-SECM is demonstrated by mapping topographical and electrochemical properties of faceted nanoparticles (NPs) and nanobubbles (NBs), respectively. Compared to previously reported SECM imaging of nanostructures, this AFM-SECM enables quantitative assessment of local surface activity or reactivity with higher resolution of surface mapping.

Probing Surface Electrochemical Activity of Nanomaterials using a Hybrid Atomic Force Microscope-Scanning Electrochemical Microscope AFM-SECM

Atomic force microscopy (AFM) combined with scanning electrochemical microscopy (SECM), namely, AFM-SECM, can be used to simultaneously acquire high-resolution topographical and electrochemical information on material surfaces at nanoscale. Such information is critical to understanding heterogeneous properties (e.g., reactivity, defects, and reaction sites) on local surfaces of nanomaterials, electrodes and biomaterials.

Hibrit Atomik Kuvvet Mikroskobu-Taramalı Elektrokimyasal Mikroskop (AFM-SECM) Kullanarak Nanomalzemelerin Yüzey Elektrokimyasal Aktivitesinin Yoklandırılması

Scanning electrochemical microscopy (SECM) is used to measure the local electrochemical behavior of liquid/solid, liquid/gas and liquid/liquid interfaces. ...

Microscopic Visualization of Porous Nanographenes Synthesized through a Combination of Solution and On-Surface Chemistry

On-surface synthesis has recently been regarded as a promising approach for the generation of new molecular structures. It has been particularly successful in the synthesis of graphene nanoribbons, nanographenes and intrinsically reactive and instable, yet attractive species. It is based on the combination of solution chemistry aimed at preparation of appropriate molecular precursors for further ultra-high vacuum surface assisted transformations. This approach also owes its success to an incredible development of characterization techniques, such as scanning tunneling/atomic force microscopy and related methods, which allow detailed, local characterization at atomic scale. While the surface-assisted synthesis can provide molecular nanostructures with outstanding precision, down to single atoms, it suffers from basing on metallic surfaces and often limited yield. Therefore, the extension of the approach away from metals and the struggle to increase productivity seem to be significant challenges toward wider applications. Herein, we demonstrate the on-surface synthesis approach for generation of non-planar nanographenes, which are synthesized through a combination of solution chemistry and sequential surface-assisted processes, together with the detailed characterization by scanning probe microscopy methods.

<meta charset="utf8"></head><body>Çözelti ve Yüzey Kimyası Kombinasyonu ile Sentezlenen Gözenekli Nanografenlerin Mikroskobik Görüntülenmesi

A combination of solution and surface assisted synthesis opens new directions in the atomically precise synthesis of nanostructures. Scanning tunneling microscopy (STM) supplemented by non-contact atomic force microscopy (nc-AFM) enables detailed characterization of newly designed and generated carbon-based nano-objects.

Çözelti ve Yüzey Kimyası Kombinasyonu ile Sentezlenen Gözenekli Nanografenlerin Mikroskobik Görüntülenmesi

On-surface synthesis has recently been regarded as a promising approach for the generation of new molecular structures. It has been particularly ...

Yüksek verimli denetimleri mümkün kılmak için AFMS'de paralel aktif konsol dizileri

Active Probe Atomic Force Microscopy with Quattro-Parallel Cantilever Arrays for High-Throughput Large-Scale Sample Inspection

An Atomic Force Microscope&#160;(AFM) is&#160;a powerful and versatile tool for nanoscale surface studies to capture 3D topography images of samples. However, due to their limited imaging throughput, AFMs have not been widely adopted for large-scale inspection purposes. Researchers have developed high-speed AFM systems to record dynamic process videos in chemical and biological reactions at tens of frames per second, at the cost of a small imaging area of up to several square micrometers. In contrast, inspecting large-scale nanofabricated structures, such as semiconductor wafers, requires nanoscale spatial resolution imaging of a static sample over hundreds of square centimeters with high productivity. Conventional AFMs use a single passive cantilever probe with an optical beam deflection system, which can only collect one pixel at a time during AFM imaging, resulting in low imaging throughput. This work utilizes an array of active cantilevers with embedded piezoresistive sensors and thermomechanical actuators, which allows simultaneous multi-cantilever operation in parallel operation for increased imaging throughput. When combined with large-range nano-positioners and proper control algorithms, each cantilever can be individually controlled to capture multiple AFM images. With data-driven post-processing algorithms, the images can be stitched together, and defect detection can be performed by comparing them to the desired geometry. This paper introduces principles of the custom AFM using the active cantilever arrays, followed by a discussion on practical experiment considerations for inspection applications. Selected example images of silicon calibration grating, highly-oriented pyrolytic graphite, and extreme ultraviolet lithography masks are captured using an array of four active cantilevers (&#34;Quattro&#34;) with a 125 &#181;m tip separation distance. With more engineering integration, this high-throughput, large-scale imaging tool can provide 3D metrological data for extreme ultraviolet (EUV) masks, chemical mechanical planarization (CMP) inspection, failure analysis, displays, thin-film step measurements, roughness measurement dies, and laser-engraved dry gas seal grooves.

Yazar Spotlight: Quattro-Paralel Konsol Dizileri ile Aktif Prob Atomik Kuvvet Mikroskobuna Giriş

Large-scale sample inspection with nanoscale resolution has a wide range of applications, especially for nanofabricated semiconductor wafers. Atomic force microscopes can be a great tool for this purpose, but are limited by their imaging speed. This work utilizes parallel active cantilever arrays in AFMs to enable high-throughput and large-scale inspections.

Yüksek Verimli Büyük Ölçekli Numune Denetimi için Quattro-Paralel Konsol Dizileri ile Aktif Prob Atomik Kuvvet Mikroskobu

An Atomic Force Microscope&#160;(AFM) is&#160;a powerful and versatile tool for nanoscale surface studies to capture 3D topography images of samples. ...

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Hibrit Atomik Kuvvet Mikroskobu-Taramalı Elektrokimyasal Mikroskop (AFM-SECM) Kullanarak Nanomalzemelerin Yüzey Elektrokimyasal Aktivitesinin Yoklandırılması

Çözelti ve Yüzey Kimyası Kombinasyonu ile Sentezlenen Gözenekli Nanografenlerin Mikroskobik Görüntülenmesi

Çözelti ve Yüzey Kimyası Kombinasyonu ile Sentezlenen Gözenekli Nanografenlerin Mikroskobik Görüntülenmesi

Yüksek Verimli Büyük Ölçekli Numune Denetimi için Quattro-Paralel Konsol Dizileri ile Aktif Prob Atomik Kuvvet Mikroskobu