JoVE Logo
Faculty Resource Center

Sign In

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

DOI :

10.3791/58272-v

10:25 min

September 14th, 2018

September 14th, 2018

9,604 Views

1Center for Functional Nanomaterials, Brookhaven National Laboratory

We use an aberration-corrected scanning transmission electron microscope to define single-digit nanometer patterns in two widely-used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. Resist patterns can be replicated in target materials of choice with single-digit nanometer fidelity using liftoff, plasma etching, and resist infiltration by organometallics.

Tags

Single digit Nanometer

-- Views

Related Videos

article

Micropunching Lithography for Generating Micro- and Submicron-patterns on Polymer Substrates

article

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping

article

Bringing the Visible Universe into Focus with Robo-AO

article

Molecular Beam Mass Spectrometry With Tunable Vacuum Ultraviolet (VUV) Synchrotron Radiation

article

Synthesis and Functionalization of Nitrogen-doped Carbon Nanotube Cups with Gold Nanoparticles as Cork Stoppers

article

Scanning-probe Single-electron Capacitance Spectroscopy

article

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

article

Studying Dynamic Processes of Nano-sized Objects in Liquid using Scanning Transmission Electron Microscopy

article

Magnetic Field Mapping using Off-Axis Electron Holography in the Transmission Electron Microscope

article

Performing In Situ Closed-Cell Gas Reactions in the Transmission Electron Microscope

JoVE Logo

Privacy

Terms of Use

Policies

Research

Education

ABOUT JoVE

Copyright © 2024 MyJoVE Corporation. All rights reserved