The authors would like to thank R&#252;diger Rosenkranz and Sven Niese (Fraunhofer IKTS-MD) for their assistance in sample preparation, and Ude Hangen, Douglas Stauffer, Ryan Major and Oden Warren (Hysitron Inc.) for their technical support on the PI95 TEM holder. The support of the Center for Advancing Electronics Dresden (cfaed) and the Dresden Center for Nanoanalysis (DCN) at Technische Universit&#228;t Dresden is acknowledged as well.

1.准备样品的聚焦离子束（FIB）变薄（图1） <ol><li>切割全晶圆成小片（约10毫米×10mm）的用金刚石划线。 </li><li>纪念“针尖对针尖”结构对芯片的位置。 </li><li>锯切割机芯片2毫米尺寸，以获得60微米的酒吧。酒吧包含了“针尖对针尖”结构的中心。 </li><li>胶水使用强力胶铜半环上的目标吧。下一步，胶水在Cu样品台的酒吧还使用强力胶。然后，用银膏来设置半环和铜样品台之​​间的导通。 注意：当处理样品，确保始终戴上防静电腕带，以防止静电放电，这可能在样品中损坏敏感结构。 </li></ol> 2. FIB减薄在扫描电子显微镜（图2） <ol><li>把一个在步骤1中得到的样品ñSEM样品阶段，小心地将舞台变成了SEM。 </li><li>选择沉积模式，并建立必要的保护铂层的尺寸（面积和厚度）。始终使用30千伏离子束维持最高的精度。调谐电流，以获得满意的效率，依赖于所需的Pt层的尺寸。 <ol><li>沉积的Pt线接触一个衬垫，以在Cu阶段（地电位）。接着，沉积厚的Pt层上的“尖到尖的”结构，这是非常重要的，以尽量减少在FIB减薄工艺的离子损伤和加强薄片层的顶部上。这是在FIB制备中使用的标准程序。 </li><li>采取小心不通过Pt层进行铂沉积时引进的“尖到尖的”结构的顶部的两个焊盘之间的任何导电路径。任何导电通路，将短路电路（ 图2A和B）。 </li></ol></li><li> FIB铣削<ol><li>使用30千伏的电压为10Pa和电流晋级决赛。薄靶棒成H酒吧透射电镜薄片150和180纳米之间的厚度。 </li><li>切一个缺口接近垫（V + PAD），这将通过在TEM的传感器尖端被感动。使用缺口作为标记，以确定在TEM的正确垫。 </li></ol></li></ol>从扫描电镜3.样品传输到TEM的<ol><li>戴上防静电腕带接触样品之前。 </li><li>卸除从SEM阶段的准备H-酒吧样本。从SEM中取出时，请在Cu阶段的样本。 </li><li>修复铜级到TEM持有人。移动TEM支架接近测试结构（几百微米的距离测试结构）的光学显微镜下的传感器尖端。 <ol><li>将TEM座插入TEM谨慎。在TR期间不要使用任何清洁处理（ 如 ，等离子清洗）ansfer过程，否则薄片可能受到影响。 </li></ol></li><li>保留时间为15分钟内或更短的样品传输，以避免过分暴露于环境水分和氧。 </li></ol> 4.建立电气连接（图3） <ol><li> TEM的支架连接到它的控制系统和数字​​源。然后切换控制系统和数字​​源表上。 </li><li>通过调整旋钮上的TEM持有人在做换能器尖端测试结构的粗略方法时，显示屏在TEM传感器尖端。 <ol><li>移动TEM支架靠近V +垫的传感器尖端（≤500纳米）。使换能器尖端相同的水平：作为垫（Z高度）。调的尖端的位置，使前端面对V +垫的中心。 </li></ol></li><li>联系传感器尖到V +垫。设置在顶端一个非常低的电压（0.5 V至约1 V），而接近垫。监视当前simultaneously以确保接触被建立。 </li></ol> 5. 在原位实验TDDB <ol><li>使用200千伏的加速电压以TEM。移动电子束到感兴趣的区域;选择合适的放大倍率和聚焦影像。 </li><li>使用低照度步骤（≤8），以减少对测试结构的光束的损害。使用冷凝器光圈以仅在该H-棒样品的薄的部分定位的照明区域。 </li><li>关于使用数字源，同时记录在原位的TEM图像（2-3帧/秒）的“尖到尖的”结构施加恒定电压（≤40 V）。通过使用自脚本代码， 例如，使用DigitalMicrograph软件自动记录图像。 </li><li>暂停实验看到金属的表观扩散到ULK介质时，做了电子能谱成像（ESI）的化学分析。 <ol><li>将过滤器狭缝孔进入OMEG一个能量过滤器的TEM。 </li><li>调整滤波器淤孔的宽度，以获得在电子能量损失谱（EELS）的适当能量宽度（10-20伏特）。 </li><li>按住Shift键的能量在EELS铜M-边吸收峰。 </li><li>返回到成像模式获得的铜的M-边缘有吸收峰的能量过滤TEM图像。 </li><li>转移能量至铜的M-边缘的前边缘区，并得到另一种能量过滤TEM图像。 </li><li>校正两个图像之间的样品的漂移。 </li><li>由第二个将所述第一图像以获得Cu的跳跃比图像。 </li></ol></li><li>继续TDDB实验：使用数字源的“尖到尖的”结构重新应用恒定电压（≤40 V）和记录的TEM图像。 </li></ol> 6.计算机断层扫描<ol><li>执行时的TDDB​​实验完成的TEM计算机断层扫描，以获取有关二三维分布信息ffused颗粒。 </li><li>倾斜的样品和记录倾斜系列138°的。使用1°倾斜的步骤，并在在明视场（BF）STEM模式的每一步记录图像。 </li><li>重建系列（包括对准的图像，确定倾斜轴，重建的体积和分割，以形成三维断层容积）。 </li></ol>

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No competing financial interests.

在TDDB实验成功的前提是良好的样品制备，特别是在SEM FIB研磨过程。首先，一个厚的Pt层上的“尖到尖的”结构的顶部具有待沉积。的厚度和Pt层的尺寸可以通过SEM操作者进行调整，但必须遵循三个原则：（1）厚度和尺寸是足够的，以保护从在整个研磨过程中可能的离子束损坏的目标区域; （2）还有一个比较厚的Pt层（≥400纳米）上的研磨后留下的样品的顶部，它保护从内部和外部的应力的微妙样?...

由于铜互连首次被引入超大规模集成电路（ULSI）技术在1997年1，低k和超低k值（ULK）电介质被采纳到后端-的线（BEOL）片上的互连之间的绝缘材料。新材料， 例如结合，铜以降低电阻和低k / ULK电介质为低电容，克服增加的阻容（RC）的影响引起的延迟由互连尺寸收缩2,3，但是，这样做的好处是侵占通过微电子器件近年来持续侵略性缩放。使用低k / ULK材料导致在制造过程中和产品的可靠性的各种挑战，尤其是当在互连间距达到约100纳米或更小4-6。 TDDB是指一种介电材料的物理失效机制作为时间的函数下的电场。的TDDB​​可靠性试验通常进行加速条件（高架电场和/或升高的温度）下。 的TDDB​​在片上互连堆叠是用于微电子装置，它已经提出在可靠性社区强烈的关注的最关键的失效机制之一。它将继续在可靠性工程师，因为ULK电介质的聚光灯更弱的电气性能和机械性能被集成到先进技术节点的设备与。 专用实验已经进行调查TDDB失效机理7-9，和一个显著量的努力已投入到开发其描述电场的装置10-13和寿命之间的关系的模型。现有的研究有利于可靠性工程师微电子的社区;然而，许多查林GES依然存在，许多问题仍需要进行详细的解答。例如，成熟的模型来描述物理破坏机理及降解动力学的TDDB​​过程和各实验验证仍然缺乏。作为一个特殊的需要，更合适的模型，需要替代的保守√E模型14。 由于TDDB调查中非常重要的组成部分，典型故障分析正面临着前所未有的挑战， 即提供全面和确凿的证据来解释失败的机制和降解动力学物理。显然，检查数以百万计的通孔和纳米级铜线路平方米的一招一式易地成像故障部位是不是合适的选择障碍这一挑战，因为它是非常耗时，而且对破坏机理的动力学信息有限可以提供。因此，一项紧迫的任务已经出现开发第二，优化实验，以获得更好的方法来研究TDDB失效机理和降解动力学。 在本文中，我们将展示原位实验方法来研究铜/ ULK互连堆叠的TDDB失效机理。以高品质成像和化学分析能力的TEM被用于研究的专门测试结构的动力学过程。 原位电试验被整合到TEM实验以提供升高的电场到电介质。定制的“尖到尖的”结构，包括完全封装铜互连和绝缘用ULK材料，被设计在32纳米CMOS技术节点。此处所述的实验过程也可扩展到在有源器件的其它结构。

<table border="0" cellpadding="0" cellspacing="0">
	<tbody>
		<tr>
			<td>Automatic Dicing Saw</td>
			<td>DISCO Kiru-Kezuru-Migaku Technologies</td>
			<td></td>
			<td></td>
		</tr>
		<tr>
			<td>Scanning Electron Microscope</td>
			<td>Zeiss</td>
			<td>Zeiss Nvision 40</td>
			<td></td>
		</tr>
		<tr>
			<td>Picoindentor</td>
			<td>Hysitron</td>
			<td>Hysitron Pi95</td>
			<td></td>
		</tr>
		<tr>
			<td>Keithley SourceMeter</td>
			<td>Keithley</td>
			<td>Keithley 2602/237</td>
			<td></td>
		</tr>
		<tr>
			<td>Transmission Electron Microscope</td>
			<td>FEI</td>
			<td>FEI Tecnai F20</td>
			<td></td>
		</tr>
		<tr>
			<td>Transmission Electron Microscope</td>
			<td>Zeiss</td>
			<td>Zeiss Libra 200</td>
			<td></td>
		</tr>
	</tbody>
</table>

in situ time-dependent dielectric breakdown in the transmission electron microscope: a possibility to understand the failure mechanism in microelectronic devices

The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. The aggressive scaling of feature sizes, both on devices and interconnects, leads to serious challenges to ensure the required product reliability. Standard reliability tests and post-mortem failure analysis provide only limited information about the physics of failure mechanisms and degradation kinetics. Therefore it is necessary to develop new experimental approaches and procedures to study the TDDB failure mechanisms and degradation kinetics in particular. In this paper, an in situ experimental methodology in the transmission electron microscope (TEM) is demonstrated to investigate the TDDB degradation and failure mechanisms in Cu/ULK interconnect stacks. High quality imaging and chemical analysis are used to study the kinetic process. The in situ electrical test is integrated into the TEM to provide an elevated electrical field to the dielectrics. Electron tomography is utilized to characterize the directed Cu diffusion in the insulating dielectrics. This experimental procedure opens a possibility to study the failure mechanism in interconnect stacks of microelectronic products, and it could also be extended to other structures in active devices.

图4显示了明视场（BF）TEM从原位测试图像。有被部分破坏的TaN /钽障碍和预先存在的铜原子在ULK电介质的电试验（ 图4A）之前由于环境延长储存。只有376秒，40 V后，介电击穿开始，并伴随着与铜的距离M1金属两大迁移通路，具有正电位参考接地侧15-16。扩散的Cu粒子在ULK电介质的最终击穿（ 图4B）之后显示在高炉TEM图像。 ?...

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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. This paper demonstrates the procedure of an in situ TDDB experiment in the transmission electron microscope, which opens a possibility to study the failure mechanism in microelectronic products.

在透射电子显微镜原位时间相关的介质击穿：一种可能性，了解微电子器件的失效机理

The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. ...

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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

8.6K 次观看.  Fraunhofer Institute for Ceramic Technologies and Systems. The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. This paper demonstrates the procedure of an in situ TDDB experiment in the transmission electron microscope, which opens a possibility to study the failure mechanism in microelectronic products. 

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