The authors would like to thank R&#252;diger Rosenkranz and Sven Niese (Fraunhofer IKTS-MD) for their assistance in sample preparation, and Ude Hangen, Douglas Stauffer, Ryan Major and Oden Warren (Hysitron Inc.) for their technical support on the PI95 TEM holder. The support of the Center for Advancing Electronics Dresden (cfaed) and the Dresden Center for Nanoanalysis (DCN) at Technische Universit&#228;t Dresden is acknowledged as well.

대한 샘플을 준비 1. 집중 이온 빔 (FIB) 대머리 (그림 1) <ol><li> (~ 10mm로 10mm) 다이아몬드 스크라이브와를 작은 칩에 전체 웨이퍼를 절단. </li><li> 칩의 &quot;팁 - 투 - 팁&quot;구조의 위치를​​ 표시합니다. </li><li> 2mm 크기가 60 ㎛ 인 바 얻기 싱 머신 칩을 보았다. 바는 중앙의 &quot;팁 - 투 - 끝&quot;구조를 포함한다. </li><li> 강력 접착제를 사용하여 구리 반 반지의 대상 막대를 접착제. 다음으로, 또한 강력 접착제를 사용하여 구리 샘플 무대에서 막대를 접착제. 그런 다음, 사용 실버 반 링과 구리 샘플 단계 사이의 전도를 설정 붙여 넣습니다. 참고 : 샘플을 취급 할 때, 항상 샘플에 민감한 구조가 손상 될 수 정전기 방전을 방지하기 위해 정전기 방지 손목 띠를 착용해야합니다. </li></ol> 스캐닝 전자 현미경 2. FIB 엷게 (그림 2) <ol><li> 1 단계에서 얻어진 샘플을 넣어N 현미경 샘플 단계 및 주사 전자 현미경으로 조심스럽게 무대를 배치합니다. </li><li> 증착 모드를 선택하고, 필요한 백금 보호 층의 크기 (면적 및 두께)를 설정합니다. 항상 최고의 정밀도를 유지하기 위해 30 kV의 이온 빔을 사용한다. 조정 전류가 필요한 백금 층의 크기에 따라 만족 효율을 얻을 수 있습니다. <ol><li> 구리 단계 (접지 전위)에 하나의 패드 연락 백금 라인을 입금. 이어서, FIB 박화 공정 중에 이온 손상을 최소화하고 얇은 라멜라를 강화하는 것이 매우 중요하다 &quot;팁 투 팁&quot;구조 위에 두께의 Pt 층을 증착. 이 FIB의 제조에 사용되는 표준 절차이다. </li><li> 백금 증착을 수행 할 때 백금 층을 통해 &quot;팁 - 투 - 팁&quot;구조의 상단에있는 두 개의 패드 사이의 도전을 소개 않도록주의하십시오. 상관 도전로 단락되어 전기 회로 (도 2A와 B). </li></ol></li><li> FIB 밀링 <ol><li> 파이널 컷 10 Pa의 30 kV의 전압과 전류를 사용합니다. 150과 180 나노 미터의 두께와 H-바 TEM의 얇은 판에 얇은 목표 바. </li><li> TEM의 트랜스 듀서 팁에 감동한다 패드 (브이 + 패드)에 가까운 노치를 잘라. TEM 올바른 패드를 식별하는 마커로 홈을 사용합니다. </li></ol></li></ol> TEM에 SEM 3. 샘플 전송 <ol><li> 샘플을 만지기 전에 정전기 방지 손목 띠를 착용 할 것. </li><li> SEM 단계에서 준비 H-바 샘플을 분리합니다. SEM에서 제거 할 때 구리 무대에 샘플을 보관하십시오. </li><li> TEM 홀더에 구리 단계를 수정합니다. 테스트 구조에 가까운 TEM 홀더 광학 현미경 (멀리 테스트 구조에서 마이크로 미터의 수백)의 트랜스 듀서 팁을 이동합니다. <ol><li> 조심스럽게 TEM에 TEM 홀더를 삽입합니다. TR 중에 세정 처리 (예를 들어, 플라즈마 세정)를 사용하지 마십시오ansfer 프로세스는 달리 라멜라는 영향을받을 수있다. </li></ol></li><li> 주변 수분 및 산소에 너무 많은 노출을 피하기 위해 15 분 이하 내에 샘플 전송 시간을 유지. </li></ol> 4. 전기 연결 설정 (그림 3) <ol><li> 그것의 제어 시스템과 소스 미터에 TEM 홀더를 연결합니다. 이어서 제어 시스템 및 소스 미터에 전환. </li><li> TEM 홀더에 손잡이를 조정하여 테스트 구조로 트랜스 듀서 팁의 거친 접근법을 수행 할 때의 TEM 듀서 팁을 모니터한다. <ol><li> (500 nm의 ≤) 브이 + 패드에 가까운 TEM 홀더의 트랜스 듀서 팁을 이동합니다. 패드로 : (높이 Z)와 동일한 수준으로 트랜스 듀서 팁을 가져와. 튠 팁의 위치와 끝 V + 패드의 중심에 직면하게. </li></ol></li><li> 브이 + 패드 변환기 팁을 문의하십시오. 패드에 접근하는 동안 (약 1 V 0.5 V) 끝에 매우 낮은 전압을 설정합니다. 현재 simultaneo 모니터usly 접촉이 설정되어 있는지 확인합니다. </li></ol> 원위치 TDDB 실험 5. <ol><li> TEM 200 kV로의 가속 전압을 사용합니다. 관심 영역에 전자 빔을 이동; 적절한 배율을 선택하고 이미지에 초점을 맞 춥니 다. </li><li> 테스트 구조에 빔 피해를 줄이기 위해 낮은 조명 단계 (≤ 8)를 사용합니다. 만 H-바 샘플의 얇은 부분에서 조명 영역을 지역화하는 콘덴서 조리개를 사용합니다. </li><li> 현장에서 TEM 이미지 (2-3 프레임 / 초)를 기록하는 동안 소스 미터를 사용하여 &quot;팁 - 투 - 팁&quot;구조에 일정한 전압 (≤ 40 V)를 적용합니다. DigitalMicrograph 소프트웨어를 사용하여, 예를 들면, 자기 스크립트 코드를 사용하여 자동으로 이미지를 기록. </li><li> ULK 유전체로 금속의 확산을보고 알 때 실험 일시과 전자 분광 영상 (ESI) 화학적 분석을 수행. <ol><li> Omeg에 필터 슬릿 개구를 삽입TEM의 에너지 필터. </li><li> 튠 필터 미사 개구의 폭은 전자 에너지 손실 스펙트럼 (EELS)에 적절한 에너지 폭 (10-20 eV의)를 얻는. </li><li> 뱀장어의 구리 M-가장자리 흡착 피크 에너지 시프트. </li><li> 구리 M-가장자리 흡수 피크 에너지 필터링 TEM 이미지를 얻기 위해 다시 촬영 모드로 이동합니다. </li><li> 구리 M-가장자리의 사전 가장자리로 에너지를 이동 및 다른 에너지 필터링 TEM 이미지를 얻을. </li><li> 두 이미지 사이의 샘플의 드리프트를 수정합니다. </li><li> 구리의 점프 비율 이미지를 얻기 위해 두 번째로 첫 번째 이미지를 나눈다. </li></ol></li><li> TDDB 실험을 계속 : 소스 미터를 사용하여 &quot;팁 - 투 - 팁&quot;구조에 일정한 전압 (≤ 40 V)를 다시 적용 및 TEM 이미지를 기록합니다. </li></ol> 6. 컴퓨터 단층 촬영 <ol><li> TDDB 실험이 완료 TEM 컴퓨터 단층 촬영을 수행, 디에 대한 3 차원 분포 정보를 얻을 수 있습니다ffused 입자. </li><li> 샘플을 기울여 138 °의 틸트 시리즈를 녹화. 1 °의 경사 단계를 사용하여 시야 (BF) 줄기 모드의 모든 단계에서 이미지를 기록합니다. </li><li> (이미지 정렬 틸트 축선을 결정하는, 3D 단층 볼륨을 형성하는 볼륨 및 세그먼트를 재구성하는 단계를 포함) 시리즈를 재구성. </li></ol>

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No competing financial interests.

TDDB 시험에서의 성공의 전제 조건은 특히 SEM에서 FIB 밀링 공정에서, 좋은 샘플 준비이다. 우선, &quot;선단 투 팁&quot;구조 위에 두꺼운 Pt 막 증착되어야한다. 두께의 Pt 층의 크기는 SEM 오퍼레이터에 의해 조정하지만, 세 가지 원칙을 따라야 할 수있다 : (1)의 두께 및 크기가 전체의 밀링 과정 가능한 이온빔 손상 대상 영역을 보호하기에 충분하다; (2) 분쇄 후 남은 시료의 위에 비교적 두꺼운 Pt 막 (?...

구리 배선은 먼저 1997 1 초 대규모 집적 (ULSI) 기술에 도입 된 이후, 저 유전율과는 초저 K는 (ULK) 유전체가 백 엔드 오브 라인으로 (BEOL)를 채용 한 온 - 칩 상호 간의 절연 재료로서. 예를 들어, 새로운 재료의 조합은, Cu를 저감 저항 및 낮은 커패시턴스를위한 저 유전율은 / ULK 유전체는 차원 상호 수축 (2, 3) 지연에 의한 지연 증가의 저항 - 커패시턴스 (RC)의 영향을 극복 위해. 그러나,이 이점은 침식 된 최근 마이크로 전자 장치들의 지속적인 공격적인 스케일링. 제조 공정 및 제품의 신뢰성 문제에 대한 다양한 저 -k / ULK 재료 결과의 이용은, 배선 피치는 약 100㎚ 이하가 4-6에 도달 할 경우 특히. TDDB는 시간의 함수로서 유전체 재료의 물리적 파괴 메카니즘을 말한다전기장 하에서. TDDB 신뢰성 테스트는 일반적으로 가속 조건 (상승 된 전기장 및 / 또는 고온) 하에서 수행된다. 상호는 스택에 칩의 TDDB 이미 신뢰성 지역 사회에 강한 우려를 제기 한 마이크로 전자 장치를위한 가장 중요한 고장 메커니즘 중 하나입니다. 심지어 약한 전기 및 기계적 특성이 첨단 기술 노드에있는 장치에 통합되고 함께 ULK 유전체 이후 신뢰성 엔지니어의 주목을 계속합니다. 전용 실험 TDDB 실패 메커니즘 7-9를 조사하기 위해 수행되었으며, 상당한 노력이 디바이스 (10-13)의 전기장과 수명과의 관계를 설명하는 모델을 개발하기 위해 투자하고있다. 기존의 연구는 마이크로 전자 공학의 신뢰성 엔지니어의 지역 사회에 도움이; 그러나, 많은 challenGES는 여전히 존재하고 많은 질문은 아직 구체적으로 대답 할 필요가있다. 예를 들어, 검증 모델은 TDDB 과정에서 물리적 실패 메커니즘 및 분해 동력학을 설명하고 각각의 실험적인 검증이 아직 부족하다. 특정 필요에 따라, 더 적합한 모델은 보수적 인 √E 모델 (14)를 대체하기 위해 필요합니다. TDDB 조사의 매우 중요한 부분으로, 일반적인 고장 분석은 고장 메커니즘과 분해 반응 속도의 물리학을 설명하는 포괄적이고 확실한 증거를 제공, 즉, 전례없는 도전에 직면하고있다. 분명히, 그것이 손상 메카니즘의 동역학에 관한 제한된 정보는 매우 시간 소모적이며, 때문에 실패 사이트, 장애물이 챌린지에 대한 적절한 선택이 아니다 묘화 일대일 및 현지 외 의해 비아 및 나노 구리 라인 m 수백만 검사 제공 될 수있다. 따라서, 긴급 태스크를 개발 등장차 실험을 최적화하고 TDDB 실패 메커니즘과 분해 동역학을 연구하기 위해 더 나은 방법을 얻을 수 있습니다. 본 논문에서는 현장 실험 방법론은 구리 / ULK 상호 스택의 TDDB 실패 메커니즘을 조사하기 위해 시연 할 예정이다. 고품질 영상 및 화학 분석 능력 TEM 전용 테스트 구조에 운동 과정을 연구하기 위해 사용된다. 현장 전기 테스트는 유전체에 높은 전기장을 제공하기 위해 TEM 실험에 통합되어 있습니다. ULK 재료에 의해 완전히 봉입 구리 인터커넥트로 구성된 절연 맞춤형 &quot;팁 투 팁&quot;구조는, 32 nm의 CMOS 기술 노드에서 설계된다. 여기에 설명 된 실험 절차는 또한 능동 디바이스의 다른 구조로 확장 될 수있다.

<table border="0" cellpadding="0" cellspacing="0">
	<tbody>
		<tr>
			<td>Automatic Dicing Saw</td>
			<td>DISCO Kiru-Kezuru-Migaku Technologies</td>
			<td></td>
			<td></td>
		</tr>
		<tr>
			<td>Scanning Electron Microscope</td>
			<td>Zeiss</td>
			<td>Zeiss Nvision 40</td>
			<td></td>
		</tr>
		<tr>
			<td>Picoindentor</td>
			<td>Hysitron</td>
			<td>Hysitron Pi95</td>
			<td></td>
		</tr>
		<tr>
			<td>Keithley SourceMeter</td>
			<td>Keithley</td>
			<td>Keithley 2602/237</td>
			<td></td>
		</tr>
		<tr>
			<td>Transmission Electron Microscope</td>
			<td>FEI</td>
			<td>FEI Tecnai F20</td>
			<td></td>
		</tr>
		<tr>
			<td>Transmission Electron Microscope</td>
			<td>Zeiss</td>
			<td>Zeiss Libra 200</td>
			<td></td>
		</tr>
	</tbody>
</table>

in situ time-dependent dielectric breakdown in the transmission electron microscope: a possibility to understand the failure mechanism in microelectronic devices

The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. The aggressive scaling of feature sizes, both on devices and interconnects, leads to serious challenges to ensure the required product reliability. Standard reliability tests and post-mortem failure analysis provide only limited information about the physics of failure mechanisms and degradation kinetics. Therefore it is necessary to develop new experimental approaches and procedures to study the TDDB failure mechanisms and degradation kinetics in particular. In this paper, an in situ experimental methodology in the transmission electron microscope (TEM) is demonstrated to investigate the TDDB degradation and failure mechanisms in Cu/ULK interconnect stacks. High quality imaging and chemical analysis are used to study the kinetic process. The in situ electrical test is integrated into the TEM to provide an elevated electrical field to the dielectrics. Electron tomography is utilized to characterize the directed Cu diffusion in the insulating dielectrics. This experimental procedure opens a possibility to study the failure mechanism in interconnect stacks of microelectronic products, and it could also be extended to other structures in active devices.

그림 4는 현장 시험에서 시야 (BF)의 TEM 이미지를 보여줍니다. 부분적으로이 위배의 TaN / 때문에 주위에서 확장 된 저장 장치에 전기 테스트 (그림 4A) 전에 ULK 유전체에서 따 장벽과 기존의 구리 원자. 접지 측 15-16을 참조하여 양의 전위를 갖는, 40 V에서 단지 376 초 후, 절연 파괴가 시작 및 M1에서 금속 구리의 두 가지 주요 이동 통로에 수반 하였다. ULK 유전체...

Watch this Scientific Journal Video about In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devi

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. This paper demonstrates the procedure of an in situ TDDB experiment in the transmission electron microscope, which opens a possibility to study the failure mechanism in microelectronic products.

투과 전자 현미경에서 제자리 시간에 따른 절연 파괴에 : 가능성은 마이크로 전자 장치의 고장 메커니즘을 이해하기

The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. ...

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Engineering

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

8.6K 조회수.  Fraunhofer Institute for Ceramic Technologies and Systems. The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. This paper demonstrates the procedure of an in situ TDDB experiment in the transmission electron microscope, which opens a possibility to study the failure mechanism in microelectronic products. 

비디오: In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Revealing Dynamic Processes of Materials in Liquids Using Liquid Cell Transmission Electron Microscopy

The recent development for in situ transmission electron microscopy, which allows imaging through liquids with high spatial resolution, has attracted significant interests across the research fields of materials science, physics, chemistry and biology. The key enabling technology is a liquid cell. We fabricate liquid cells with thin viewing windows through a sequential microfabrication process, including silicon nitride membrane deposition, photolithographic patterning, wafer etching, cell bonding, etc. A liquid cell with the dimensions of a regular TEM grid can fit in any standard TEM sample holder. About 100 nanoliters reaction solution is loaded into the reservoirs and about 30 picoliters liquid is drawn into the viewing windows by capillary force. Subsequently, the cell is sealed and loaded into a microscope for in situ imaging. Inside the TEM, the electron beam goes through the thin liquid layer sandwiched between two silicon nitride membranes. Dynamic processes of nanoparticles in liquids, such as nucleation and growth of nanocrystals, diffusion and assembly of nanoparticles, etc., have been imaged in real time with sub-nanometer resolution. We have also applied this method to other research areas, e.g., imaging proteins in water. Liquid cell TEM is poised to play a major role in revealing dynamic processes of materials in their working environments. It may also bring high impact in the study of biological processes in their native environment.

We have developed a self-contained liquid cell, which allows imaging through liquids using a transmission electron microscope. Dynamic processes of nanoparticles in liquids can be revealed in real time with sub-nanometer resolution.

액체 셀 전송 전자 현미경을 사용하여 액체의 재료의 동적 프로세스를 공개

The recent development for in situ transmission electron microscopy, which allows imaging through liquids with high spatial resolution, has attracted ...

연구

공학

Detection and Recovery of Palladium, Gold and Cobalt Metals from the Urban Mine Using Novel Sensors/Adsorbents Designated with Nanoscale Wagon-wheel-shaped Pores

Developing low-cost, efficient processes for recovering and recycling palladium, gold and cobalt metals from urban mine remains a significant challenge in industrialized countries. Here, the development of optical mesosensors/adsorbents (MSAs) for efficient recognition and selective recovery of Pd(II), Au(III), and Co(II) from urban mine was achieved. A simple, general method for preparing MSAs based on using high-order mesoporous monolithic scaffolds was described. Hierarchical cubic Ia3d wagon-wheel-shaped MSAs were fabricated by anchoring chelating agents (colorants) into three-dimensional pores and micrometric particle surfaces of the mesoporous monolithic scaffolds. Findings show, for the first time, evidence of controlled optical recognition of Pd(II), Au(III), and Co(II) ions and a highly selective system for recovery of Pd(II) ions (up to ~95%) in ores and industrial wastes. Furthermore, the controlled assessment processes described herein involve evaluation of intrinsic properties (e.g., visual signal change, long-term stability, adsorption efficiency, extraordinary sensitivity, selectivity, and reusability); thus, expensive, sophisticated instruments are not required. Results show evidence that MSAs will attract worldwide attention as a promising technological means of recovering and recycling palladium, gold and cobalt metals.

Because of the importance and extensive use of palladium, gold and cobalt metals in high-technology equipment, their recovery and recycling constitute an important industrial challenge. The metal recovery system described herein is a simple, low-cost means for the effective detection, removal, and recovery of these metals from the urban mine.

감지 및 팔라듐의 복구, 도시 광산에서 금과 코발트 금속은 나노 수레 바퀴 모양의 기공 지정 소설 센서 / 흡착제를 사용하여

Developing low-cost, efficient processes for recovering and recycling palladium, gold and cobalt metals from urban mine remains a significant challenge in ...

Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages

Synchrotron radiation micro-tomography (SR&#181;T) is a non-destructive three-dimensional (3D) imaging technique that offers high flux for fast data acquisition times with high spatial resolution. In the electronics industry there is serious interest in performing failure analysis on 3D microelectronic packages, many which contain multiple levels of high-density interconnections. Often in tomography there is a trade-off between image resolution and the volume of a sample that can be imaged. This inverse relationship limits the usefulness of conventional computed tomography (CT) systems since a microelectronic package is often large in cross sectional area 100-3,600 mm2, but has important features on the micron scale. The micro-tomography beamline at the Advanced Light Source (ALS), in Berkeley, CA USA, has a setup which is adaptable and can be tailored to a sample&#39;s properties, i.e., density, thickness, etc., with a maximum allowable cross-section of 36 x 36 mm. This setup also has the option of being either monochromatic in the energy range ~7-43 keV or operating with maximum flux in white light mode using a polychromatic beam. Presented here are details of the experimental steps taken to image an entire 16 x 16 mm system within a package, in order to obtain 3D images of the system with a spatial resolution of 8.7 &#181;m all within a scan time of less than 3 min. Also shown are results from packages scanned in different orientations and a sectioned package for higher resolution imaging. In contrast a conventional CT system would take hours to record data with potentially poorer resolution. Indeed, the ratio of field-of-view to throughput time is much higher when using the synchrotron radiation tomography setup. The description below of the experimental setup can be implemented and adapted for use with many other multi-materials.

For this study synchrotron radiation micro-tomography, a non-destructive three-dimensional imaging technique, is employed to investigate an entire microelectronic package with a cross-sectional area of 16 x 16 mm. Due to the synchrotron&#39;s high flux and brightness the sample was imaged in just 3 min&#160;with an 8.7 &#181;m spatial resolution.

멀티 스케일 3 차원 마이크로 전자 패키지를 조사하는 방사광 Microtomography 사용

Synchrotron radiation micro-tomography (SR&#181;T) is a non-destructive three-dimensional (3D) imaging technique that offers high flux for fast data ...

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications of semiconductor materials. However, it is still under debate how the defect structure determines the band structure, and therefore, the recombination behavior of electron-hole pairs responsible for the optical and electrical properties of the extended defects. The present paper is a survey of procedures for the spatially resolved investigation of structural and of physical properties of extended defects in semiconductor materials with a scanning electron microscope (SEM). Representative examples are given for crystalline silicon. The luminescence behavior of extended defects can be investigated by cathodoluminescence (CL) measurements. They are particularly valuable because spectrally and spatially resolved information can be obtained simultaneously. For silicon, with an indirect electronic band structure, CL measurements should be carried out at low temperatures down to 5 K due to the low fraction of radiative recombination processes in comparison to non-radiative transitions at room temperature. For the study of the electrical properties of extended defects, the electron beam induced current (EBIC) technique can be applied. The EBIC image reflects the local distribution of defects due to the increased charge-carrier recombination in their vicinity. The procedure for EBIC investigations is described for measurements at room temperature and at low temperatures. Internal strain fields arising from extended defects can be determined quantitatively by cross-correlation electron backscatter diffraction (ccEBSD). This method is challenging because of the necessary preparation of the sample surface and because of the quality of the diffraction patterns which are recorded during the mapping of the sample. The spatial resolution of the three experimental techniques is compared.

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.

Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications ...

Optical Trap Loading of Dielectric Microparticles In Air

We demonstrate a method to trap a selected dielectric microparticle in air using radiation pressure from a single-beam gradient optical trap. Randomly scattered dielectric microparticles adhered to a glass substrate are momentarily detached using ultrasonic vibrations generated by a piezoelectric transducer (PZT). Then, the optical beam focused on a selected particle lifts it up to the optical trap while the vibrationally excited microparticles fall back to the substrate. A particle may be trapped at the nominal focus of the trapping beam or at a position above the focus (referred to here as the levitation position) where gravity provides the restoring force. After the measurement, the trapped particle can be placed at a desired position on the substrate in a controlled manner. 
In this protocol, an experimental procedure for selective optical trap loading in air is outlined. First, the experimental setup is briefly introduced. Second, the design and fabrication of a PZT holder and a sample enclosure are illustrated in detail. The optical trap loading of a selected microparticle is then demonstrated with step-by-step instructions including sample preparation, launching into the trap, and use of electrostatic force to excite particle motion in the trap and measure charge. Finally, we present recorded particle trajectories of Brownian and ballistic motions of a trapped microparticle in air. These trajectories can be used to measure stiffness or to verify optical alignment through time domain and frequency domain analysis. Selective trap loading enables optical tweezers to track a particle and its changes over repeated trap loadings in a reversible manner, thereby enabling studies of particle-surface interaction.

A protocol for launching and stably trapping selected dielectric microparticles in air is presented.

공기에서 유전체 미세 입자의 광학 트랩로드

We demonstrate a method to trap a selected dielectric microparticle in air using radiation pressure from a single-beam gradient optical trap. Randomly ...

A Method for Obtaining Serial Ultrathin Sections of Microorganisms in Transmission Electron Microscopy

Observing cells and cell components in three dimensions at high magnification in transmission electron microscopy requires preparing serial ultrathin sections of the specimen. Although preparing serial ultrathin sections is considered to be very difficult, it is rather easy if the proper method is used. In this paper, we show a step-by-step procedure for safely obtaining serial ultrathin sections of microorganisms. The key points of this method are: 1) to use the large part of the specimen and adjust the specimen surface and knife edge so that they are parallel to each other; 2) to cut serial sections in groups and avoid difficulty in separating sections using a pair of hair strands when retrieving a group of serial sections onto the slit grids; 3) to use a 'Section-holding loop' and avoid mixing up the order of the section groups; 4) to use a 'Water-surface-raising loop' and make sure the sections are positioned on the apex of the water and that they touch the grid first, in order to place them in the desired position on the grids; 5) to use the support film on an aluminum rack and make it easier to recover the sections on the grids and to avoid wrinkling of the support film; and 6) to use a staining tube and avoid accidentally breaking the support films with tweezers. This new method enables obtaining serial ultrathin sections without difficulty. The method makes it possible to analyze cell structures of microorganisms at high resolution in 3D, which cannot be achieved by using the automatic tape-collecting ultramicrotome method and serial block-face or focused ion beam scanning electron microscopy.

This study presents reliable and easy procedures for obtaining serial ultrathin sections of a microorganism without expensive equipment in transmission electron microscopy.

전송 전자 현미경 검사 법에서 미생물의 직렬 Ultrathin 섹션을 얻기위한 방법

Observing cells and cell components in three dimensions at high magnification in transmission electron microscopy requires preparing serial ultrathin ...

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses

We demonstrate the use of two nuclear-based analytical methods that can follow the modifications of microstructural arrangement of iron-based metallic glasses (MGs). Despite their amorphous nature, the identification of hyperfine interactions unveils faint structural modifications. For this purpose, we have employed two techniques that utilize nuclear resonance among nuclear levels of a stable 57Fe isotope, namely M&#246;ssbauer spectrometry and nuclear forward scattering (NFS) of synchrotron radiation. The effects of heat treatment upon (Fe2.85Co1)77Mo8Cu1B14 MG are discussed using the results of ex situ and in situ experiments, respectively. As both methods are sensitive to hyperfine interactions, information on structural arrangement as well as on magnetic microstructure is readily available. M&#246;ssbauer spectrometry performed ex situ describes how the structural arrangement and magnetic microstructure appears at room temperature after the annealing under certain conditions (temperature, time), and thus this technique inspects steady states. On the other hand, NFS data are recorded in situ during dynamically changing temperature and NFS examines transient states. The use of both techniques provides complementary information. In general, they can be applied to any suitable system in which it is important to know its steady state but also transient states.

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses

Here, we present a protocol to describe ex situ and in situ investigations of structural transformations in metallic glasses. We employed nuclear-based analytical methods which inspect hyperfine interactions. We demonstrate the applicability of M&#246;ssbauer spectrometry and nuclear forward scattering of synchrotron radiation during temperature-driven experiments.

전 Situ 수사 현장에서 구조 변환 방법: 금속 유리의 결정 화의 경우

We demonstrate the use of two nuclear-based analytical methods that can follow the modifications of microstructural arrangement of iron-based metallic ...

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

We demonstrate extension of electron-beam lithography using conventional resists and pattern transfer processes to single-digit nanometer dimensions by employing an aberration-corrected scanning transmission electron microscope as the exposure tool. Here, we present results of single-digit nanometer patterning of two widely used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. The method achieves sub-5 nanometer features in poly (methyl methacrylate) and sub-10 nanometer resolution in hydrogen silsesquioxane. High-fidelity transfer of these patterns into target materials of choice can be performed using metal lift-off, plasma etch, and resist infiltration with organometallics.

We use an aberration-corrected scanning transmission electron microscope to define single-digit nanometer patterns in two widely-used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. Resist patterns can be replicated in target materials of choice with single-digit nanometer fidelity using liftoff, plasma etching, and resist infiltration by organometallics.

자리 나노미터 전자 빔 리소 그래피는 수 차 수정 스캐닝 전송 전자 현미경으로

We demonstrate extension of electron-beam lithography using conventional resists and pattern transfer processes to single-digit nanometer dimensions by ...

Application of a Coupling Agent to Improve the Dielectric Properties of Polymer-Based Nanocomposites

In this work, an easy, low-cost, and widely applicable method was developed to improve the compatibility between the ceramic fillers and the polymer matrix by adding 3-aminopropyltriethoxysilane (KH550) as a coupling agent during the fabrication process of BaTiO3-P(VDF-CTFE) nanocomposites through solution casting. Results show that the use of KH550 can modify the surface of ceramic nanofillers; therefore, good wettability on the ceramic-polymer interface was achieved, and the enhanced energy storage performances were obtained by a suitable amount of the coupling agent. This method can be used to prepare flexible composites, which is highly desirable for the production of high-performance film capacitors. If an excessive amount of coupling agent is used in the process, the non-attached coupling agent can participate in complex reactions, which leads to a decrease in dielectric constant and an increase in dielectric loss.

Here, we demonstrate a simple and low-cost solution-casting process to improve the compatibility between the filler and the matrix of polymer-based nanocomposites using surface modified BaTiO3 fillers, which can effectively enhance the energy density of the composites.

폴리머 기반 나노 복합체의 유전체 특성을 개선하기 위한 커플링 에이전트 적용

In this work, an easy, low-cost, and widely applicable method was developed to improve the compatibility between the ceramic fillers and the polymer ...

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Resistive switching crossbar architecture is highly desired in the field of digital memories due to low cost and high-density benefits. Different materials show variability in resistive switching properties due to the intrinsic nature of the material used, leading to discrepancies in the field because of underlying operation mechanisms. This highlights a need for a reliable technique to understand mechanisms using nanostructural observations. This protocol explains a detailed process and methodology of in&#160;situ nanostructural analysis as a result of electrical biasing using transmission electron microscopy (TEM). It provides visual and reliable evidence of underlying nanostructural changes in real time memory operations. Also included is the methodology of fabrication and electrical characterizations for asymmetric crossbar structures incorporating amorphous vanadium oxide. The protocol explained here for vanadium oxide films can be easily extended to any other materials in a metal-dielectric-metal sandwiched structure. Resistive switching crossbars are predicted to serve the programmable logic and neuromorphic circuits for next-generation memory devices, given the understanding of the operation mechanisms. This protocol reveals the switching mechanism in a reliable, timely, and cost-effective way in any type of resistive switching materials, and thereby predicts the device&#39;s applicability.

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Presented here is a protocol for analyzing nanostructural changes during in&#160;situ biasing with transmission electron microscopy (TEM) for a stacked metal-insulator-metal structure. It has significant applications in resistive switching crossbars for the next generation of programmable logic circuits and neuromimicking hardware, to reveal their underlying operation mechanisms and practical applicability.