This work was supported by the Natural Science and Engineering Research Council of Canada (Discovery Grant No. 122795-2010) and the program of the Canada Research Chair in Quantum Semiconductors (JJD). The help provided by Xiaohuan Xuang, Mohamed Walid Hassen and technical assistance of Sonia Blais of the Universit&#233; de Sherbrooke Centre de caract&#233;risation de mat&#233;riaux (CCM) in collecting XPS data are greatly appreciated. NL acknowledges the Merit Scholarship Program for Foreign Student, Fonds de recherche du Qu&#233;bec - Nature et technologies, for providing a graduate student scholarship.

1. Sample Preparation
<ol>
	<li>Use a diamode scribe to cleave an n-type (P-doped) one-side polished Si wafer (resistivity 3.1~4.8 &#937;.m) which is 3 inch in diameter, 380 &#181;m thick, into samples of 12 mm x 6 mm; clean the samples in OptiClear, acetone and isopropyl alcohol (5 min&#160;for every step).</li>
	<li>Etch samples in a ~0.9% HF solution for 1 &#160;min&#160;to etch away initial oxide; rinse in DI water and&#160;dry in high-purity (99.999%) nitrogen (N2).</li>
	<li>Store prepared samples in N...

The authors have nothing to disclose.

We have proposed a protocol of UV laser irradiation of Si wafer in a microfluidic chamber filled with low concentration of H2O2 solution to induce a superhydrophilic Si surface, which is mainly due to the generation of Si-OH. UV laser photolysis of H2O2 was supposed to form negatively charged OH- radicals. Also, UV laser photoelectric effect leads to the formation of a positively charged surface37. Therefore, the interaction of these negative OH-</sup...

The remarkable electronic and chemical properties as well as its high mechanical strength have made silicon (Si) an ideal choice for microelectronic devices and biomedical chips1. Selective area control of the Si surface has received significant attention for applications involving microfluidic and lab-on-chip devices2,3.This is often obtained either by nano-scale modification of the surface roughness or by chemical treatment of the surface4. The surface roughening or patterning to produce disordered or ordered surface structures on the Si surface include photolithography5, ion beam lithography6 and laser techniques7. Compared with these methods,&#160;laser surface texturing process is reported to be less complicated with the potential to produce microstructures with high spatial resolution8. However, as Si has an elevated texturing threshold, requiring irradiation with pulse fluence to induce surface texturing in excess of its ablation threshold (~500 mJ/cm2)9, texturing of Si surface has frequently been assisted by employing reactive gas atmospheres, such as that of a high pressure SF6 environment4,7,8. Consequently, to modify wettability of the Si surface, numerous works have focused on chemical treatment by depositing organic10 and inorganic films2, or using plasma or electron beam surface treatment11,12. It is recognized that hydrophilicity of Si originating from the existence of singular and associated OH groups on its surface could be achieved by boiling it in a H2O2 solution at 100 &#176;C for several minutes13. However, the hydrophobic Si surface states, most of which are due to the presence of Si-H or Si-O-CH3 groups, could be achieved by wet chemical handling involving etching with&#160;HF acid solution or coating with photoresist13-15. To achieve selective area control of wettability of Si, complex patterning steps are usually required, including treatment in chemical solutions16. The high chemical reactivity of UV laser radiation has also been used to selective area process organic film coated solid substrates and modify their wettability17. However, a limited amount of data is available on laser-assisted modification of Si wettability by irradiation of samples immersed in different chemical solutions.
In our previous research, UV laser irradiation of III-V semiconductors in air18-20 and NH321 was successfully used to alter the surface chemical composition of GaAs, InGaAs and InP. We established that UV laser irradiation of III-V semiconductors&#160;in deionized (DI) water decreases surface oxides and carbides, while the water adsorbed on semiconductor surface increases22. A strongly hydrophobic Si surface (CA~103&#176;) was obtained by ArF laser irradiation of Si samples in methanol in our recent work 23. As indicated by X-ray photoelectron spectroscopy (XPS), this is&#160;primarily&#160;due to the&#160;ability&#160;of the ArF laser to photodissociate CH3OH. We have also used KrF and ArF lasers to irradiate Si (001) in a 0.01% of H2O2 in DI water. This allowed us to achieve selective area formation of superhydrophilic surface of Si (001) characterized by the CA of near 15&#176;. The XPS results suggest that this is due to generation of Si-OH bonds on the irradiated surface24.
A detailed description of this new technique using KrF and ArF lasers for selective area in situ modification of the hydrophilic/hydrophobic surface of Si surface in low concentration of H2O2/H2O and methanol solutions is demonstrated in this article. The details provided here should be sufficient to allow similar experiments to be performed by interested researchers.

<table border="0" cellpadding="0" cellspacing="0">
	<tbody>
		<tr>
			<td>fluorescein stained nanospheres</td>
			<td>Invitrogen</td>
			<td>F8795</td>
			<td></td>
		</tr>
		<tr>
			<td>OptiClear</td>
			<td>National Diagnostics</td>
			<td>OE-101</td>
			<td></td>
		</tr>
		<tr>
			<td>ArF laser (&#955;=193 nm)</td>
			<td>Lumonics</td>
			<td>pulse master 800</td>
			<td></td>
		</tr>
		<tr>
			<td>KrF laser (&#955;=248 nm)</td>
			<td>Lumonics</td>
			<td>pulse master 800</td>
			<td></td>
		</tr>
		<tr>
			<td>XPS</td>
			<td>Kratos Analytical</td>
			<td>AXIS Ultra DLD</td>
			<td></td>
		</tr>
		<tr>
			<td>Fluorescence microscope</td>
			<td>Olympus</td>
			<td>IX71</td>
			<td></td>
		</tr>
		<tr>
			<td>XPS quantitification software</td>
			<td>CasaXPS</td>
			<td>2.3.15</td>
			<td></td>
		</tr>
	</tbody>
</table>

selective area modification of silicon surface wettability by pulsed uv laser irradiation in liquid environment

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H2O2/H2O solution did not show measurable change in their initial contact angle (CA) ~75&#176;. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H2O2/H2O solution at 250 and 65 mJ/cm2, respectively, has decreased the CA to near 15&#176;, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer&#8217;s surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of&#160;the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH3OH) using ArF laser operating at pulse fluence of 65 mJ/cm2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103&#176;. The XPS results indicate ArF laser induced formation of Si&#8211;(OCH3)x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH3 radicals.

These representative results have been presented in our previous published work23,24. Figure 1 shows the CA vs. N (number of pulses) on sites irradiated by KrF laser at 250 mJ/cm2 in DI H2O for different concentrations of H2O2/H2O solutions (e.g., 0.01, 0.02, 0.05 and 0.2%).&#160;The CA decreases with increasing pulse number for all the H2O2 solutions. The minimum CA (~15&#176;) for the 0.02 and 0.01% H2...

Watch this Scientific Journal Video about Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment at JoVE.com

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

We report on a process of in situ alteration of HF treated Si (001) surface into a hydrophilic or hydrophobic state by irradiating samples in microfluidic chambers filled with&#160;H2O2/H2O solution (0.01%-0.5%) or methanol solutions using pulsed UV laser of a relative low pulse fluence.

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of ...

selective-area-modification-silicon-surface-wettability-pulsed-uv

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JoVE Journal

Engineering

8.2K 조회수.  Université de Sherbrooke.  우리는 HF의 시츄 변경이 2 O 2 / H 2 O 용액 (0.01 % -0.5 %) 또는 메탄올 용액 H로 채워진 미세 유체 챔버에서 샘플을 조사함으로써 친수성 또는 소수성 상태의 Si (001) 표면 처리에서의 공정보고 상대적으로 낮은 펄스 UV 플루 언스의 레이저 펄스를 사용. 