이 작품은 부분적으로 미소 세포 에네르기 ACG에 INSIS-CNRS (1D-RENOX)와 스페인 정부 (MAT2012-35324 파이-201460I004)의 PEP들 프로젝트에 의해 투자되었다.

솔 1. 준비 <ol><li> 전가 수분 테트라 에틸 오르토 실리케이트 (TEOS) 실험실 밸런스 및 자기 교반기가 배치되는 흄 후드의 겔 필름의 제조 전날의 용액을 제조 하였다. 프로토콜이 단계에서과를 통해 실험실 코트, 장갑과 보안경을 착용하십시오. <ol><li> 테플론 코팅 된 자기 교반 막대가 CTAB 1.68 g의 무게를 함유하는 50 ㎖의 비이커에, 시계 접시로 덮고 비커 48.13 ml의 에탄올과 염산 35 %, 3.00 mL를 추가하고 CTAB가 완전히 용해 될 때까지 교반한다. </li><li> 비커의 적하에 TEOS의 7.37 ML을 추가 교반하면서, 시계 유리 플라스크를 커버하고 / O N 저어 보자 (1-2의 속도로 초당 방울). </li></ol></li><li> 다음 날, 시니어 2+의 1 M 수용액을 준비합니다. 세 솔루션은 시니어 소금의 재 침전하는 경향이 있기 때문에 단지 겔 필름의 준비 전에 다음과 같은 단계를 수행합니다. <ol><li> 6.6 무게SrCl 2의 654g · 25 mL의 메스 플라스크에 6H 2 O. </li><li> 25 ㎖ (플라스크 마크에 메 니스 커스 접선)까지 초순수 (예를 들어, 밀리-Q)를 추가하고 플라스틱 캡으로 플라스크를 닫고 부드럽게 염화 스트론튬을 용해 플라스크를 흔들. </li></ol></li><li> / N을 O 교반 방치 졸을 함유하는 50 ㎖ 유리 비커 시니어 2+의 1 M 수용액 2 ㎖를 추가한다. 25 분에 대한 솔루션을 저어. </li><li> 결국 실험실 안전 및 환경 보호 프로토콜에 따라 생성 된 잔류 물을 폐기. </li></ol> 2. 젤 필름 증착시에 (100) 기판 <ol><li> 기판의 제조 <ol><li> 다이아몬드 팁 또는를 사용하여 웨이퍼 평면에 평행 한 방향 또는 수직 웨이퍼를 절단하여 2 인치, p 형 200 미크론의 두께를 갖는 (100) 실리콘 웨이퍼 밖으로 5cm로 약 2 ㎝의 실리콘 슬래브 컷 개체를 날카로운. 광고에서이 단계를 수행밴스, 겔 필름의 증착 전에 인스턴스 일. </li><li> 단지 겔의 퇴적 전에, 기판을 에탄올로 세척하고 건조하게하거나, 건조를 촉진하기 위해 질소 흐름 또는 압축 공기를 사용한다. 단계 1.3의 완료를 기다리는 동안이 단계를 수행합니다. </li></ol></li><li> 코트 필름. 균질 거대 기공 구조를 얻기 위해서는 20 % RT에서 55 %의 상대 습도의 조건 하에서이 단계를 수행한다. <ol><li> 딥 코팅 순서를 확립한다. 고려 된 Si 슬랩의 실제 길이와 비이커 용액의 레벨을 복용 초기 및 최종 위치를 선택하므로 슬래브 시작 위치에 액면 위에 적어도 2cm과의 바닥 위에 1cm 것을 침지 끝에 비이커. 150mm / 분에 대한 몰입과 철수 속도 모두를 설정합니다. 제로 침지 시간 (최종 위치에서 시간)을 설정합니다. </li><li> 단계 완료 1.3 장소 그래서와 비커시딥 코터의 팔에 매달려시 슬래브 아래에 잘 중심 위치에 lution. </li><li> 슬래브를 보장하는 것은 수평에 대하여 가능한 한 수직, 클립 딥 코터 아암의 Si 슬랩의 한쪽 끝을 고정한다. </li><li> 딥 코팅 시퀀스를 실행하고, 딥 코터 아암에서의 Si 슬랩 클립을 풉니. 추가의 Si 슬랩으로 반복 단계 2.2.3 및 2.2.4은 용액의 안정성이 저하되지 않도록, 1 시간 이상이 제제 연장 않도록주의하면서, 더 막을 생성한다. </li></ol></li><li> 결국 실험실 안전 및 환경 보호 프로토콜에 따라 생성 된 용액을 폐기. </li></ol> 열처리 3. 젤 필름 결정화 <ol><li> 시에 젤 막의 열처리 (100). <ol><li> 프로그램은 퍼니스 공기 분위기에서 다음 열 처리를 행하는 것이 : 가열을 RT에서 1,000 ℃까지 3 ℃ / 분, 1000 ℃에서 들고; C 5 시간 동안 3 ℃ / min으로 실온으로 냉각. </li><li> 알루미나 보트에 딥 - 코팅 된 실리콘 기판을 배치로에 도입하고, 열 처리를 실행한다. </li></ol></li><li> 결정화 된 영화의 청소. <ol><li> 결정화시에 막면에 expulsed 된 시니어의 축적 2+ 제거하고, 에탄올로 먼저 탈 이온수로하고, 필름을 린스하기 위해 농축 HNO 3을 3 시간 동안 결정화 된 필름을 담근다. </li></ol></li></ol>

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저자가 공개하는 게 없다.

제시된 방법은 실리콘에 석영 거대 다공성 필름을 제조하는 상향식 접근법이다. 석영 필름의 생산의 표준 방법에 비해, 하향식 기술로 제어 될 수있다 (150) 및 450 nm의 사이의 두께로 훨씬 더 얇은 필름을 절단하고 큰 열적 성장 된 결정의 연마는, 프로토콜에 기재된 방법이 얻어에 기초 철수 속도. 석영 필름 두께, 압전 반응의 제어에 관한 모든 실험 세부 사항은 참고 문헌 8, 13에보고됩니다.</s...

α-석영 등의 압전 재료는 전압 바이어스로 제출 될 때, 기계적 변형을 겪는다. 이 물질은 다공성의 경우, 이러한 부피 변화는 생물 세포 소기관 생활에서 관찰 할 수있다 것과 유사한 반응 시스템을 구축, 모공 확장 또는 수축으로 이어질 수 있습니다. 1 변형 가능한 다공성 α-석영 마이크로, 2를 사용하여 제작되었지만, 이러한 기술은 아직 없습니다 3 차원 세공 구조를 생성하고, 세공 직경이 수백 나노 미터의 순서이다. 구조화 된 무정형 실리카의 결정화 인해 조 및 용융에 높은 표면 에너지와 건축 변형에 의한 불균일 핵에 의해 방해되었다. 실리카의 모든 형태가 매우 안정적 그런가 4 면체 네트워크에 내장되어 있기 때문에 또한, 비정질 실리카, 석영 및 α-SiO2를 다른 다 형체의 형성에의 자유 에너지는 광범위한 온도 범위에서, 지는데 거의 동등g 것이 곤란 비정질 실리카 겔의 결정화에서 단일 다 형체로서 α-석영을 생성한다. (3) 구조의 비정질 실리카의 제어 결정화가 석영 비교적 느린 핵 생성 속도하지만 매우 빠른 성장 속도를 제공하다 어렵게 만드는 다른 특징을, 10에서 94 사이 nm의 사이를보고 / 초. 빠른 성장과 함께 4,5- 느린 핵 따라서 원래의 형태가 손실 된 원래의 나노 다공성 구조보다 훨씬 큰 결정을 생성하기 쉽다. 예컨대 나트륨 + 및 리 + 등의 알칼리 금속은, 자주 열수 처리와 조합하여, α-석영을 결정화하는데 사용되어왔다. 5,6 또한 티 4+ / 칼슘 결합으로 실리카의 구형 입자를 구체화하는데 이용 하였다 실리콘을 사용 alcoxides 소프트 화학 행함으로써 석영. 7 그러나, 석영으로 구조화 된 무정형 실리카 막의 결정화 제어 도전 남아 있었다. 2의 성장을 촉진하는 것으로 확인되었습니다. 8,9 에피 택시, α-석영과 &lt;100&gt; 실리콘 기판 사이의 유리한 불일치에서 발생, 배향 된 압전 박막의 제조. 증발 유도 자기 조립 메조 포러스 실리카 필름을 생성하기 위해 1999 년 이후 10이 기술 연구되었다 가변 크기와 준결 정상의 기공을 생성하기 위해 다양한 조건 하에서 템플 레이팅 제제의 다수 적용에 사용되어왔다. 이것은 중간 기공 크기 subnanometric 변경 구조 기공이 광범위하게 주목을 검증하는 시스템 (11)을 통해 다공질 용질 확산에 큰 영향을 미칠 수있는 것으로 밝혀졌다. 또한, 내부 기공 실리카 시스템 접근성 템플릿 미셀 위상을 제어함으로써 얻을 수있다. (12) 여기서, 합성 경로 t모자는 소설 상 분리가 입증되는 비정질 실리카 층의 두께와 기공 크기를 통해 전례없는 제어 할 수 있습니다. (13)이 영화는 주위 압력에서 공기에서 1,000 ℃에서 시니어 (II) 염 및 결정화하는 α-석영으로 침투한다. 이 결정화 공정을 이용하여 보존 가능한 기공 크기가 결정되고, 벽 두께 및 막 두께의 영향이 연구된다. 마지막으로 압전 및 기공 시스템의 변형성을 공부한다.

<table border="0" cellpadding="0" cellspacing="0" width="714">
	<tbody>
		<tr height="21">
			<td height="21" style="height:21px;width:180px;">Dip coater</td>
			<td style="width:281px;">Nadetech&#160;</td>
			<td style="width:173px;">ND-DC 11/150&#160;</td>
			<td style="width:80px;"></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:180px;">Furnace</td>
			<td style="width:281px;">Nabertherm&#160;</td>
			<td>R 50/250/12</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:180px;">Atomic Force Microscope</td>
			<td style="width:281px;">Agilent&#160;</td>
			<td>5500 LS</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:180px;">Materials and Reagents&#160;</td>
			<td style="width:281px;"></td>
			<td></td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:180px;">Silicon wafers</td>
			<td style="width:281px;">SHE Europe Ltd.</td>
			<td></td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:180px;">SrCl2&#183;6H2O</td>
			<td style="width:281px;">Aldrich</td>
			<td>13909</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:180px;">CTAB</td>
			<td style="width:281px;">Aldrich</td>
			<td>H5582</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:180px;">Ethanol Absolute&#160;</td>
			<td style="width:281px;">Aldrich</td>
			<td>161086</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:180px;">HCl 35% solution</td>
			<td style="width:281px;">PanReac</td>
			<td>721019</td>
			<td></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:180px;">TEOS</td>
			<td style="width:281px;">Aldrich</td>
			<td>131903</td>
			<td></td>
		</tr>
	</tbody>
</table>

preparation of macroporous epitaxial quartz films on silicon by chemical solution deposition

This work describes the detailed protocol for preparing piezoelectric macroporous epitaxial quartz films on silicon(100) substrates. This is a three-step process based on the preparation of a sol in a one-pot synthesis which is followed by the deposition of a gel film on Si(100) substrates by evaporation induced self-assembly using the dip-coating technique and ends with a thermal treatment of the material to induce the gel crystallization and the growth of the quartz film. The formation of a silica gel is based on the reaction of a tetraethyl orthosilicate and water, catalyzed by HCl, in ethanol. However, the solution contains two additional components that are essential for preparing mesoporous epitaxial quartz films from these silica gels dip-coated on Si. Alkaline earth ions, like Sr2+ act as glass melting agents that facilitate the crystallization of silica and in combination with cetyl trimethylammonium bromide (CTAB) amphiphilic template form a phase separation responsible of the macroporosity of the films. The good matching between the quartz and silicon cell parameters is also essential in the stabilization of quartz over other SiO2 polymorphs and is at the origin of the epitaxial growth.

재료 합성의 진행은 다른 측면을 모니터링하여 조절 하였다. 침지 코팅 공정 후 하나는 필름의 형태, 그린 레이저 및 주사 전자 현미경 (SEM) 후방 산란 된 전자 모드 (도 1A-B)의 화상의 반사 스폿의 회절 구조의 최종 외관을 관찰 할 수있다. 결정화 공정 후에는 원자 힘 현미경 (AFM) 지형 이미지 (도 1C)와 그 α-석영 막 사이의 에피 택셜 관계 (α-Q를 나...

Watch this Scientific Journal Video about Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition at JoVE.com

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

A protocol is presented for the preparation of piezoelectric macroporous epitaxial films of quartz on silicon by solution chemistry using dip-coating and thermal treatments in air.

화학 용액 증착에 의해 실리콘에 거대 다공성 에피 택셜 석영 필름의 제조

This work describes the detailed protocol for preparing piezoelectric macroporous epitaxial quartz films on silicon(100) substrates. This is a three-step ...

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Chemistry

9.2K 조회수.  CNRS-École Centrale de Lyon. A protocol is presented for the preparation of piezoelectric macroporous epitaxial films of quartz on silicon by solution chemistry using dip-coating and thermal treatments in air. 

비디오: Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

Preparation of Hydrophobic Metal-Organic Frameworks via Plasma Enhanced Chemical Vapor Deposition of Perfluoroalkanes for the Removal of Ammonia

Plasma enhanced chemical vapor deposition (PECVD) of perfluoroalkanes has long been studied for tuning the wetting properties of surfaces. For high surface area microporous materials, such as metal-organic frameworks (MOFs), unique challenges present themselves for PECVD treatments. Herein the protocol for development of a MOF that was previously unstable to humid conditions is presented. The protocol describes the synthesis of Cu-BTC (also known as HKUST-1), the treatment of Cu-BTC with PECVD of perfluoroalkanes, the aging of materials under humid conditions, and the subsequent ammonia microbreakthrough experiments on milligram quantities of microporous materials. Cu-BTC has an extremely high surface area (~1,800 m2/g) when compared to most materials or surfaces that have been previously treated by PECVD methods. Parameters such as chamber pressure and treatment time are extremely important to ensure the perfluoroalkane plasma penetrates to and reacts with the inner MOF surfaces. Furthermore, the protocol for ammonia microbreakthrough experiments set forth here can be utilized for a variety of test gases and microporous materials.

Herein the procedures for plasma enhanced chemical vapor deposition of perfluoroalkanes on microporous materials such as metal-organic frameworks to enhance their stability and hydrophobicity are described. Furthermore, breakthrough testing of milligram quantities of samples is described in detail.

플라즈마 통해 소수성 유기 금속 프레임 워크의 제조 암모니아의 제거에 대한 퍼플 루오로 알칸의 화학 증착을 강화

Plasma enhanced chemical vapor deposition (PECVD) of perfluoroalkanes has long been studied for tuning the wetting properties of surfaces. For high ...

연구

화학

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

Atomically defined substrate surfaces are prerequisite for the epitaxial growth of complex oxide thin films. In this protocol, two approaches to obtain such surfaces are described. The first approach is the preparation of single terminated perovskite SrTiO3 (001) and DyScO3 (110) substrates. Wet etching was used to selectively remove one of the two possible surface terminations, while an annealing step was used to increase the smoothness of the surface. The resulting single terminated surfaces allow for the heteroepitaxial growth of perovskite oxide thin films with high crystalline quality and well-defined interfaces between substrate and film. In the second approach, seed layers for epitaxial film growth on arbitrary substrates were created by Langmuir-Blodgett (LB) deposition of nanosheets. As model system Ca2Nb3O10- nanosheets were used, prepared by delamination of their layered parent compound HCa2Nb3O10. A key advantage of creating seed layers with nanosheets is that relatively expensive and size-limited single crystalline substrates can be replaced by virtually any substrate material.

Various procedures are outlined to prepare atomically defined templates for epitaxial growth of complex oxide thin films. Chemical treatments of single crystalline SrTiO3 (001) and DyScO3 (110) substrates were performed to obtain atomically smooth, single terminated surfaces. Ca2 Nb3 O10- nanosheets were used to create atomically defined templates on arbitrary substrates.

복합 산화물 박막의 에피 택셜 성장을위한 원자 적으로 정의 된 템플릿

Atomically defined substrate surfaces are prerequisite for the epitaxial growth of complex oxide thin films. In this protocol, two approaches to obtain ...

Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene

Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in traditional materials, including low cost and mechanical flexibility. In a similar vein, it would be advantageous to expand the use of organics into high frequency electronics and spin-based electronics. This work presents a synthetic process for the growth of thin films of the room temperature organic ferrimagnet, vanadium tetracyanoethylene (V[TCNE]x, x~2) by low temperature chemical vapor deposition (CVD). The thin film is grown at &#60;60 &#176;C, and can accommodate a wide variety of substrates including, but not limited to, silicon, glass, Teflon and flexible substrates. The conformal deposition is conducive to pre-patterned and three-dimensional structures as well. Additionally this technique can yield films with thicknesses ranging from 30 nm to several microns. Recent progress in optimization of film growth creates a film whose qualities, such as higher Curie temperature (600 K), improved magnetic homogeneity, and narrow ferromagnetic resonance line-width (1.5 G) show promise for a variety of applications in spintronics and microwave electronics.

We present the synthesis of the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]x, x~2) via low temperature chemical vapor deposition (CVD). This optimized recipe yields an increase in Curie temperature from 400 K to over 600 K and a dramatic improvement in magnetic resonance properties.

자석의 유기 화학 기상 증착, 바나듐 테트라시

Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in ...

Preparation of Highly Porous Coordination Polymer Coatings on Macroporous Polymer Monoliths for Enhanced Enrichment of Phosphopeptides

We describe a protocol for the preparation of hybrid materials based on highly porous coordination polymer coatings on the internal surface of macroporous polymer monoliths. The developed approach is based on the preparation of a macroporous polymer containing carboxylic acid functional groups and the subsequent step-by-step solution-based controlled growth of a layer of a porous coordination polymer on the surface of the pores of the polymer monolith. The prepared metal-organic polymer hybrid has a high specific micropore surface area. The amount of iron(III) sites is enhanced through metal-organic coordination on the surface of the pores of the functional polymer support. The increase of metal sites is related to the number of iterations of the coating process.
The developed preparation scheme is easily adapted to a capillary column format. The functional porous polymer is prepared as a self-contained single-block porous monolith within the capillary, yielding a flow-through separation device with excellent flow permeability and modest back-pressure. The metal-organic polymer hybrid column showed excellent performance for the enrichment of phosphopeptides from digested proteins and their subsequent detection using matrix-assisted laser desorption/ionization time-of-flight mass spectrometry. The presented experimental protocol is highly versatile, and can be easily implemented to different organic polymer supports and coatings with a plethora of porous coordination polymers and metal-organic frameworks for multiple purification and/or separation applications.

A procedure for the preparation of porous hybrid separation media composed of a macroporous polymer monolith internally coated by a high surface area microporous coordination polymer is presented.

포스 포의 향상된 농축을위한 거대 다공성 고분자 모노리스에 다공성 조정 폴리머 코팅의 제조

We describe a protocol for the preparation of hybrid materials based on highly porous coordination polymer coatings on the internal surface of macroporous ...

Preparation of Mica and Silicon Substrates for DNA Origami Analysis and Experimentation

The designed nature and controlled, one-pot synthesis of DNA origami provides exciting opportunities in many fields, particularly nanoelectronics. Many of these applications require interaction with and adhesion of DNA nanostructures to a substrate. Due to its atomically flat and easily cleaned nature, mica has been the substrate of choice for DNA origami experiments. However, the practical applications of mica are relatively limited compared to those of semiconductor substrates. For this reason, a straightforward, stable, and repeatable process for DNA origami adhesion on derivatized silicon oxide is presented here. To promote the adhesion of DNA nanostructures to silicon oxide surface, a self-assembled monolayer of 3-aminopropyltriethoxysilane (APTES) is deposited from an aqueous solution that is compatible with many photoresists. The substrate must be cleaned of all organic and metal contaminants using Radio Corporation of America (RCA) cleaning processes and the native oxide layer must be etched to ensure a flat, functionalizable surface. Cleanrooms are equipped with facilities for silicon cleaning, however many components of DNA origami buffers and solutions are often not allowed in them due to contamination concerns. This manuscript describes the set-up and protocol for in-lab, small-scale silicon cleaning for researchers who do not have access to a cleanroom or would like to incorporate processes that could cause contamination of a cleanroom CMOS clean bench. Additionally, variables for regulating coverage are discussed and how to recognize and avoid common sample preparation problems is described.

Reproducible cleaning processes for substrates used in DNA origami research are described, including bench-top RCA cleaning and derivatization of silicon oxide. Protocols for surface preparation, DNA origami deposition, drying parameters, and simple experimental set-ups are illustrated.

DNA 종이 접기 분석 및 실험에 대한 운모와 실리콘 기판의 제조

The designed nature and controlled, one-pot synthesis of DNA origami provides exciting opportunities in many fields, particularly nanoelectronics. Many of ...

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and conformality by taking advantage of self-limiting reactions between vapor-phase precursors and the growing film. Perovskite oxides present potential for next-generation electronic materials, but to-date have mostly been deposited by physical methods. This work outlines a method for depositing SrTiO3 (STO) on germanium using ALD. Germanium has higher carrier mobilities than silicon and therefore offers an alternative semiconductor material with faster device operation. This method takes advantage of the instability of germanium's native oxide by using thermal deoxidation to clean and reconstruct the Ge (001) surface to the 2&#215;1 structure. 2-nm thick, amorphous STO is then deposited by ALD. The STO film is annealed under ultra-high vacuum and crystallizes on the reconstructed Ge surface. Reflection high-energy electron diffraction (RHEED) is used during this annealing step to monitor the STO crystallization. The thin, crystalline layer of STO acts as a template for subsequent growth of STO that is crystalline as-grown, as confirmed by RHEED. In situ X-ray photoelectron spectroscopy is used to verify film stoichiometry before and after the annealing step, as well as after subsequent STO growth. This procedure provides framework for additional perovskite oxides to be deposited on semiconductors via chemical methods in addition to the integration of more sophisticated heterostructures already achievable by physical methods.

This work details the procedures for the growth and characterization of crystalline SrTiO3 directly on germanium substrates by atomic layer deposition. The procedure illustrates the ability of an all-chemical growth method to integrate oxides monolithically onto semiconductors for metal-oxide semiconductor devices.

원자 층 증착을 통해 게르마늄에 페 로브 스카이 스트론튬 티탄의 에피 택셜 성장

Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and ...

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Organo-lead halide perovskites have recently attracted great interest for potential applications in thin-film photovoltaics and optoelectronics. Herein, we present a protocol for the fabrication of this material via the low-pressure vapor assisted solution process (LP-VASP) method, which yields ~19% power conversion efficiency in planar heterojunction perovskite solar cells. First, we report the synthesis of methylammonium iodide (CH3NH3I) and methylammonium bromide (CH3NH3Br) from methylamine and the corresponding halide acid (HI or HBr). Then, we describe the fabrication of pinhole-free, continuous methylammonium-lead halide perovskite (CH3NH3PbX3 with X = I, Br, Cl and their mixture) films with the LP-VASP. This process is based on two steps: i) spin-coating of a homogenous layer of lead halide precursor onto a substrate, and ii) conversion of this layer to CH3NH3PbI3-xBrx by exposing the substrate to vapors of a mixture of CH3NH3I and CH3NH3Br at reduced pressure and 120 &#176;C. Through slow diffusion of the methylammonium halide vapor into the lead halide precursor, we achieve slow and controlled growth of a continuous, pinhole-free perovskite film. The LP-VASP allows synthetic access to the full halide composition space in CH3NH3PbI3-xBrx with 0&#160;&#8804; x&#160;&#8804; 3. Depending on the composition of the vapor phase, the bandgap can be tuned between 1.6 eV&#160;&#8804; Eg&#160;&#8804; 2.3 eV. In addition, by varying the composition of the halide precursor and of the vapor phase, we can also obtain CH3NH3PbI3-xClx. Films obtained from the LP-VASP are reproducible, phase pure as confirmed by X-ray diffraction measurements, and show high photoluminescence quantum yield. The process does not require the use of a glovebox.

Here, we present a protocol for the synthesis of CH3NH3I and CH3NH3Br precursors and the subsequent formation of pinhole-free, continuous CH3NH3PbI3-xBrx thin films for the application in high efficiency solar cells and other optoelectronic devices.

가변 밴드 갭 Pinhole 무료 Methylammonium 리드 할로겐 페로 영화에 대 한 낮은 압력 증기를 이용한 솔루션 과정

Organo-lead halide perovskites have recently attracted great interest for potential applications in thin-film photovoltaics and optoelectronics. Herein, ...

Aerosol-assisted Chemical Vapor Deposition of Metal Oxide Structures: Zinc Oxide Rods

Whilst columnar zinc oxide (ZnO) structures in the form of rods or wires have been synthesized previously by different liquid- or vapor-phase routes, their high cost production and/or incompatibility with microfabrication technologies, due to the use of pre-deposited catalyst-seeds and/or high processing temperatures exceeding 900 &#176;C, represent a drawback for a widespread use of these methods. Here, however, we report the synthesis of ZnO rods via a non-catalyzed vapor-solid mechanism enabled by using an aerosol-assisted chemical vapor deposition (CVD) method at 400 &#176;C with zinc chloride (ZnCl2) as the precursor and ethanol as the carrier solvent. This method provides both single-step formation of ZnO rods and the possibility of their direct integration with various substrate types, including silicon, silicon-based micromachined platforms, quartz, or high heat resistant polymers. This potentially facilitates the use of this method at a large-scale, due to its compatibility with state-of-the-art microfabrication processes for device manufacture. This report also describes the properties of these structures (e.g., morphology, crystalline phase, optical band gap, chemical composition, electrical resistance) and validates its gas sensing functionality towards carbon monoxide.

Columnar zinc oxide structures in the form of rods are synthesized via aerosol-assisted chemical vapor deposition without the use of pre-deposited catalyst-seed particles. This method is scalable and compatible with various substrates based on either silicon, quartz or polymers.

에 어로 졸 기반 구조 금속 산화물의 화학 증기 증 착: 산화 아연 막대

Whilst columnar zinc oxide (ZnO) structures in the form of rods or wires have been synthesized previously by different liquid- or vapor-phase routes, ...

Reactive Vapor Deposition of Conjugated Polymer Films on Arbitrary Substrates

We demonstrate a method of conformally coating conjugated polymers on arbitrary substrates using a custom-designed, low-pressure reaction chamber. Conductive polymers, poly(3,4-ethylenedioxythiophene) (PEDOT) and poly(3,4-propylenedioxythiophene) (PProDOT), and a semiconducting polymer, poly(thieno[3,2-b]thiophene) (PTT), were deposited on unconventional highly-disordered and textured substrates with high surface areas, such as paper, towels and fabrics. This reported deposition chamber is an improvement of previous vapor reactors because our system can accommodate both volatile and nonvolatile monomers, such as 3,4-propylenedioxythiophene and thieno[3,2-b]thiophene. Utilization of both solid and liquid oxidants are also demonstrated. One limitation of this method is that it lacks sophisticated in situ thickness monitors. Polymer coatings made by the commonly used solution-based coating methods, such as spin-coating and surface grafting, are often not uniform or susceptible to mechanical degradation. This reported vapor phase deposition method overcomes those drawbacks and is a strong alternative to common solution-based coating methods. Notably, polymer films coated by the reported method are uniform and conformal on rough surfaces, even at a micrometer scale. This feature allows for future application of vapor deposited polymers in electronics devices on flexible and highly textured substrates.

This paper presents a protocol for reactive vapor deposition of poly(3,4-ethylenedioxythiophene), poly(3,4-propylenedioxythiophene), and poly(thieno[3,2-b]thiophene) films on glass slides and rough substrates, such as textiles and paper.

임의 기판에 활용 된 고분자 필름의 반응성 증 착

We demonstrate a method of conformally coating conjugated polymers on arbitrary substrates using a custom-designed, low-pressure reaction chamber. ...

Deposition of Porous Sorbents on Fabric Supports

A microwave deposition technique for silanes, previously described for production of oleophobic fabrics, is adapted to provide a fabric support material that can be subsequently treated by dip coating. Dip coating with a sol preparation provides a supported porous layer on the fabric. In this case, the porous layer is a porphyrin functionalized sorbent system based on a powdered material that has been demonstrated previously for the capture and conversion of phosgene. A representative coating is applied to cotton fabric at a loading level of 10 mg/g. This coating has minimal impact on water vapor transport through the fabric (93% of the support fabric rate) while significantly reducing transport of 2-chloroethyl ethyl sulfide (CEES) through the material (7% of support fabric rate). The described approaches are suitable for use with other fabrics providing amine and hydroxyl groups for modification and can be used in combination with other sol preparations to produce varying functionality.

This report details a microwave-initiated approach for deposition of porphyrin functionalized porous organosilicate sorbents on a cotton fabric and demonstrates reduction in 2-chloroethyl ethyl sulfide (CEES) transport through the fabric resulting from this treatment.

패브릭 지원에 다공성 흡수의 증 착

A microwave deposition technique for silanes, previously described for production of oleophobic fabrics, is adapted to provide a fabric support material ...