JoVE Logo
Faculty Resource Center

Sign In

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films

DOI :

10.3791/59415-v

May 11th, 2019

May 11th, 2019

7,352 Views

1Department of Electrical and Computer Engineering, University of Victoria

This article describes the growth of epitaxial films of Mg3N2 and Zn3N2 on MgO substrates by plasma-assisted molecular beam epitaxy with N2 gas as the nitrogen source and optical growth monitoring.

Tags

Plasma assisted Molecular Beam Epitaxy

-- Views

Related Videos

article

Molecular Beam Mass Spectrometry With Tunable Vacuum Ultraviolet (VUV) Synchrotron Radiation

article

Speciation and Bioavailability Measurements of Environmental Plutonium Using Diffusion in Thin Films

article

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

article

In Situ Monitoring of the Accelerated Performance Degradation of Solar Cells and Modules: A Case Study for Cu(In,Ga)Se2 Solar Cells

article

Focused Ion Beam Fabrication of LiPON-based Solid-state Lithium-ion Nanobatteries for In Situ Testing

article

Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition

article

Film Control to Study Contributions of Waves to Droplet Impact Dynamics on Thin Flowing Liquid Films

article

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

article

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

article

Procedure for the Transfer of Polymer Films Onto Porous Substrates with Minimized Defects

JoVE Logo

Privacy

Terms of Use

Policies

Research

Education

ABOUT JoVE

Copyright © 2024 MyJoVE Corporation. All rights reserved