Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
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07:00 min
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June 25th, 2020
DOI :
June 25th, 2020
•Xiang Zhang*1,2, Zhaolong Chen*3, Hongliang Chang1,2, Jianchang Yan1,2, Shenyuan Yang2,4, Junxi Wang1,2, Peng Gao5, Tongbo Wei1,2
1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics, Peking University
Chapters in this video
0:04
Introduction
0:40
Atmospheric-Pressure Chemical Vapor Deposition (APCVD) Growth of Graphene on Nano-Patterned SapphireSubstrate (NPSS) and Nitrogen (N2)-Plasma Treatment
2:03
Metal-Organic Chemical Vapor Deposition (MOCVD) Growth of Aluminum Nitrogen (AlN) on Graphene-NPSS and of Aluminum-Gallium-Nitrogen (AlGaN) Multiple Quantum Wells (MQW)
3:08
AlGaN-Based Deep Ultraviolet Light-Emitting Diode (DUV-LED) Fabrication
6:02
Results: Representative AIN Characterization
6:32
Conclusion
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