Part of the work has been performed in the project JEMSiP_3D, which is funded by the Public Authorities in France, Germany, Hungary, The Netherlands, Norway and Sweden, as well as by the ENIAC Joint Undertaking. The authors would like to thank the Dimes Technology Centre staff for processing support.

注意：使用前请咨询所有相关的材料安全数据表（MSDS）。几个在该制造工艺中使用的化学品是剧毒和致癌性。相比，他们的大部分对手纳米材料可能有额外的危险。用设备，化学品或纳米材料工作时，包括利用工程控制（通风柜）和个人防护装备（防护眼镜，手套，无尘服）的请使用一切适当的安全措施。 1.对准标记定义为光刻<ol><li>开始与单面抛光的工业级硅（100）晶片与n或p型掺杂。 </li><li>外套与正性光刻胶的1.4微米的晶片。在130℃下进行90秒的六甲基二硅氮烷（HMDS）处理，以促进光致抗蚀剂，接着在晶片上的冷板，旋涂以适当的速度（3500转）的冷却的粘接性，和一个90秒的软烘烤一牛逼95℃。 </li><li>使用光刻掩模和曝光工具暴露对准标记，曝光量为120mJ / cm 2以下。 </li><li>执行一个水坑的发展过程。执行90秒115℃曝光后烘烤，接着60秒显影用显影剂和90秒的硬烘烤，在100℃以固化该抗蚀剂。 </li><li>用显微镜检查，如果在抗蚀剂中的开口是正确的尺寸。 </li><li>蚀刻用Si氯等离子体蚀刻的120纳米。该厚度提供了良好的对比度在这项工作中所用的曝光工具的自动对准系统。例如使用感应耦合等离子体（ICP）：40分之20SCCM 的 O 2 / CF 4，5毫乇，五百分之六十〇 W¯¯压板/ ICP RF功率，10秒氧化物突破蚀刻，接着四十零分之八十SCCM Cl 2中/ HBr的，60毫托，五百分之二十〇W¯¯压板/ ICP的射频功率，35秒硅蚀刻。 </li><li>使用氧等离子体汽提塔，除去光致抗蚀剂（1千瓦，400 SCCM O 2与endpoINT探测和2分钟过腐蚀）。作为光致抗蚀剂是由像丙酮等离子体正常溶剂固化，不能使用。 </li><li>清洁晶圆。首先把它们用于在99％HNO 3，接着漂洗在去离子水中10分钟，直到水的电阻率是5兆欧（有机清洁）。在此之后清洗晶片在110℃下在65％HNO 3 10分钟，随后用DI水漂洗直到水的电阻率是5兆欧（金属清洁）。使用冲洗器干燥器来干燥的晶片。 </li></ol> 2.底部金属和层间电介质沉积<ol><li>使用磁控溅射沉积经由测试的底部金属层。一叠三个金属层需要被沉积：500纳米的Ti，TiN的为50nm，和100nm的钛。第一Ti层是降低堆栈的电阻，使TiN是实际的支撑层为碳纳米管的生长，并且顶Ti为防止等离子体损伤使TiN蚀刻SiO 2层12时</suP&gt;。执行使用纯Ti靶，用Ar等离子体，在350℃的基板温度的Ti溅射。对于TiN的反应性溅射的Ar使用和 N 2的组合，再次在350℃衬底温度下进行。 </li><li>使用等离子体增强化学汽相沉积（PECVD），沉积1微米厚的层的 SiO 2。这里原硅酸四乙酯（TEOS）用作前体在350℃的台板温度。 <ol><li>检查SiO 2层的使用适当的工具的厚度，例如是反射或椭圆仪。 </li></ol></li><li>外套晶片与1.4微米阳性光致抗蚀剂的，从一个90秒的HMDS处理在130℃，接着在晶片上的冷板，旋涂以适当的速度（3500转）冷却，并以90秒的软烘烤在95℃下。 </li><li>使用光刻掩模和曝光工具，露出开口的所需图案，这将在后面蚀刻到SiO 2的吨Ó形成通孔，对准到对准标记，曝光量140毫焦/厘米2。 </li><li>执行开始以90秒115℃的后曝光烘烤的单个水坑开发过程，接着60秒显影用显影剂和90秒的硬烘烤，在100℃。 </li><li>用显微镜检查，如果在抗蚀剂中的开口是正确的尺寸和如果叠加到对准标记是正确的。 </li><li>等离子体蚀刻接触开口中的 SiO 2。例如，使用三极管等离子刻蚀机与C 2 F 6 /瑞郎3一百四十四分之三十六SCCM在180毫托和300瓦的射频功率。如果需要的话，进行一个测试晶片上的蚀刻速率试验，以最小化过蚀刻至5％-10％的时间。 注意：虽然在Ti是耐在此氟化学反应蚀刻，长时间暴露于等离子体，将导致在Ti层的物理蚀刻。如果TiN层暴露于等离子体，这将有负面influen铈对碳纳米管12的生长。不使用湿法蚀刻，因为这将导致在开口过多加宽，使得顶部金属部分4有问题的。 </li><li>在0.55％的HF去除牺牲Ti层通过湿法蚀刻进行60秒。蚀刻冲洗用DI水晶片直到水电阻率之后是5兆欧并使用冲洗器干燥器来干燥的晶片。 注意：使用显微镜它能如果在Ti层被蚀刻进行检查，在TiN层将具有金棕色颜色，而Ti为金属灰色。 </li></ol> 3.催化剂沉积和碳纳米管的生长<ol><li>蒸发Co的5纳米使用电子束蒸发器。抽空直到至少2×10 -6乇 ，以及沉积，以除去任何水膜前加热下使用真空灯晶片至60℃。光致抗蚀剂用于限定接触开口被保持在晶片上，以提供在所述的 SiO 2的催化剂，以接触开口的自对准。 </li><li>删除接触开口外联合通过剥离。钴发现四氢呋喃（THF），得到最好的剥离结果和生长在低温下。N-甲基 -2-吡咯烷酮（NMP），这是以前用于铁蒸发后剥离，发现损坏联合太这样的程度，以防止任何对准的碳纳米管的生长。把该晶片15分钟，在超声浴用THF在35℃。冲洗DI水5分钟，干燥用旋转器或氮气枪。 </li><li>检查显微镜下的晶圆检查光刻胶残渣。如果残留物留执行THF更长的超声处理，并选择使用一种特殊的柔软的棉拭子剥离目的而手动擦去残留物。 </li><li>采用低压化学气相沉积（LPCVD）进行碳纳米管的生长。通过加入50sccm的C 2 H 2 8分钟的预退火，在350℃用700标准立方厘米的 H 2在80毫巴，随后碳纳米管的生长：使用以下配方。在350℃，60增长的分给了大约1微米的碳纳米管。如有必要，执行测试的生长来调节高度，这应该是相同的厚度与SiO 2层。冷却反应器，并清除，使用N 2。 </li><li>使用扫描电子显微镜，或通过制备的横截面，以检查CNT的高度的开口内下45°倾斜。 </li><li>检查使用拉曼光谱，以确定在CNT 18的结晶性的样品。 </li></ol> 4.顶边金属化<ol><li>使用磁控溅射沉积顶部金属。如Ti是一个良好的金属用于接触碳纳米管19， ​​第一溅射100nm的钛，接着为2μm的Al（1％的Si）的不破坏真空。 </li><li>外套与3.1微米阳性光致抗蚀剂具有更高的粘度，从一个90秒的HMDS处理在130℃，接着在晶片上的冷板，旋涂以3000rpm的冷却，并以90秒的软烘烤在晶片95C。 </li><li>使用光刻掩模和曝光工具暴露对准到对准标记的顶部金属图案，曝光量420毫焦/厘米2，-1焦点。 </li><li>执行一个水坑的发展过程。这开始于一个90秒115℃曝光后烘烤，接着使用显影剂和90秒的硬烘烤，在100℃下60秒显影。 </li><li>用显微镜检查，如果在抗蚀剂的线是正确的尺寸和如果叠加到标记是正确的。 </li><li>蚀刻使用氯离子腐蚀的钛/铝堆栈。例如使用感应耦合等离子体：40分之30SCCM Cl 2中/ HBr的，5毫乇，五百分之四十零W¯¯滚筒/ ICP RF功率与终点探测和80％过蚀刻使用15/30 SCCM Cl 2中/ HBr的。 </li><li>使用氧等离子体汽提塔，除去光致抗蚀剂（1千瓦，400 SCCM O 2与端点检测和2分钟过腐蚀）。如果金属覆盖面不完整（ 即每年大约有针孔CNT）使用有机溶剂（如NMP）中，除去光致抗蚀以防止等离子体损坏碳纳米管。 </li><li>清洁晶圆。把它们用于在99％HNO 3，随后用DI水漂洗10分钟，直到水的电阻率是5兆欧（有机清洁）。使用冲洗器干燥器来干燥的晶片。 </li></ol> 5.测量<ol><li>使用根据制造商的说明用扫描电子显微镜来检查晶片的顶部金属化。 注意：如果必要的晶片可以机械地切割，以便通过使用90°的样品倾斜，从而导致在图像进行检查的完整的CNT，如图3由于样品是导电的，必须使用没有额外的处理步骤和该样品可以直接安装到扫描电镜。通常，可以使用的15或20千伏高电压的加速，但是，如果SiO 2层被充电了太多这可以减小吨O 5千伏。 </li><li>执行4点使用与半导体参数分析仪的组合的探针站，如图1和 Vollebregt 等人 16所述探头IV测量。 注意：通常从-0.5到0.5伏的电压扫描就足够了，如通过一个互连的电势降的理想是小的。通过使用4点探针设置探针接触针，并将设置的配线电阻的接触电阻被省略。 </li></ol>

<ol>
	<li>Sun, S. C. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Process+technologies+for+advanced+metallization+and+interconnect+systems.">Process technologies for advanced metallization and interconnect systems.</a> Technical digest of the IEEE International Electron Devices Meeting. , 765-768 (1997).</li><li>Robertson, J. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Growth+of+nanotubes+for+electronics.">Growth of nanotubes for electronics.</a> Mater. Today. 10 (1-2), 36-43 (2007).</li><li>Wei, B. Q., Vajtai, R., Ajayan, P. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Reliability+and+current+carrying+capacity+of+carbon+nanotubes.">Reliability and current carrying capacity of carbon nanotubes.</a> Appl. Phys. Lett. 79 (8), 1172-1174 (2001).</li><li>Rossnagel, S. M., Wisnieff, R., Edelstein, D., Kuan, T. S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Interconnect+issues+post+45nm.">Interconnect issues post 45nm.</a> Technical digest of the IEEE International Electron Devices Meeting. , 89-91 (2005).</li><li>Pop, E., Mann, D., Wang, Q., Goodson, K., Dai, H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Thermal+Conductance+of+an+Individual+Single-Wall+Carbon+Nanotube+above+Room+Temperature.">Thermal Conductance of an Individual Single-Wall Carbon Nanotube above Room Temperature.</a> Nano Lett. 6 (1), 96-100 (2006).</li><li>Chiodarelli, N., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Measuring+the+electrical+resistivity+and+contact+resistance+of+vertical+carbon+nanotube+bundles+for+application+as+interconnects.">Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects.</a> Nanotechnology. 22 (8), 085302 (2011).</li><li>Choi, Y. -. M., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Integration+and+Electrical+Properties+of+Carbon+Nanotube+Array+for+Interconnect+Applications.">Integration and Electrical Properties of Carbon Nanotube Array for Interconnect Applications.</a> Proceedings of the Sixth IEEE Conference on Nanotechnology. , 262-265 (2006).</li><li>Dijon, J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Ultra-high+density+Carbon+Nanotubes+on+Al-Cu+for+advanced+Vias.">Ultra-high density Carbon Nanotubes on Al-Cu for advanced Vias.</a> Technical digest of the IEEE International Electron Devices Meeting. , 33-34 (2010).</li><li>Kreupl, F., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Carbon+nanotubes+in+interconnect+applications.">Carbon nanotubes in interconnect applications.</a> Microelectron. Eng. 64 (1-4), 399-408 (2002).</li><li>Vereecke, B., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Characterization+of+carbon+nanotube+based+vertical+interconnects.">Characterization of carbon nanotube based vertical interconnects.</a> Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials. , 648-649 (2012).</li><li>Vollebregt, S., Ishihara, R., Derakhshandeh, J., vander Cingel, J., Schellevis, H., Beenakker, C. I. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Integrating+low+temperature+aligned+carbon+nanotubes+as+vertical+interconnects+in+Si+technology.">Integrating low temperature aligned carbon nanotubes as vertical interconnects in Si technology.</a> Proceedings of the 11th IEEE Conference on Nanotechnology. , 985-990 (2011).</li><li>Yokoyama, D., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Electrical+Properties+of+Carbon+Nanotubes+Grown+at+a+Low+Temperature+for+Use+as+Interconnects.">Electrical Properties of Carbon Nanotubes Grown at a Low Temperature for Use as Interconnects.</a> Jpn J. App. Phys. 47 (4), 1985-1990 (2008).</li><li>Van der Veen, M. H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Electrical+Improvement+of+CNT+Contacts+with+Cu+Damascene+Top+Metallization.">Electrical Improvement of CNT Contacts with Cu Damascene Top Metallization.</a> Proceedings of the IEEE International Interconnect Technology Conference. , 193-195 (2013).</li><li>Istratov, A. A., Hieslmair, H., Weber, E. R. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Iron+contamination+in+silicon+technology.">Iron contamination in silicon technology.</a> Appl. Phys. A. 70, 489-534 (2000).</li><li>Vollebregt, S., Tichelaar, F. D., Schellevis, H., Beenakker, C. I. M., Ishihara, R. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Carbon+nanotube+vertical+interconnects+fabricated+at+temperatures+as+low+as+350+&#176;C.">Carbon nanotube vertical interconnects fabricated at temperatures as low as 350 &#176;C.</a> 71, 249-256 (2014).</li><li>Kikkawa, T., Inoue, K., Imai, K. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Cobalt+silicide+technology.">Cobalt silicide technology.</a> Silicide Technology for Integrated Circuits. , 77-94 (2004).</li><li>Vollebregt, S., Ishihara, R., Tichelaar, F. D., Hou, Y., Beenakker, C. I. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Influence+of+the+growth+temperature+on+the+first+and+second-order+Raman+band+ratios+and+widths+of+carbon+nanotubes+and+fibers.">Influence of the growth temperature on the first and second-order Raman band ratios and widths of carbon nanotubes and fibers.</a> Carbon. 50 (10), 3542-3554 (2012).</li><li>Lim, S. C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Contact+resistance+between+metal+and+carbon+nanotube+interconnects:+Effect+of+work+function+and+wettability.">Contact resistance between metal and carbon nanotube interconnects: Effect of work function and wettability.</a> Appl. Phys. Lett. 95 (26), 264103 (2009).</li><li>Awano, Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Carbon+nanotube+via+interconnect+technologies:+size-classified+catalyst+nanoparticles+and+low-resistance+ohmic+contact+formation.">Carbon nanotube via interconnect technologies: size-classified catalyst nanoparticles and low-resistance ohmic contact formation.</a> Phys. Status Solidi (a). 203 (14), 3611-3616 (2006).</li><li>Van der Veen, M. H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Electrical+characterization+of+CNT+contacts+with+Cu+Damascene+top+contact.">Electrical characterization of CNT contacts with Cu Damascene top contact.</a> Microelectron. Eng. 106, 106-111 (2012).</li><li>Horibe, M., Nihei, M., Kondo, D., Kawabata, A., Awano, Y. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Mechanical+Polishing+Technique+for+Carbon+Nanotube+Interconnects+in+ULSIs.">Mechanical Polishing Technique for Carbon Nanotube Interconnects in ULSIs.</a> Jpn J. App. Phys. 43 (9A), 6499-6502 (2004).</li><li>Vollebregt, S., Chiaramonti, A. N., Ishihara, R., Schellevis, H., Beenakker, C. I. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Contact+resistance+of+low-temperature+carbon+nanotube+vertical+interconnects.">Contact resistance of low-temperature carbon nanotube vertical interconnects.</a> Proceedings of the 12th IEEE Conference on Nanotechnology. , 424-428 (2012).</li><li>Fiorentino, G., Vollebregt, S., Tichelaar, F. D., Ishihara, R., Sarro, P. M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed&cmd=Search&doptcmdl=Citation&defaultField=Title+Word&term=Impact+of+the+atomic+layer+deposition+precursors+diffusion+on+solid-state+carbon+nanotube+based+supercapacitors+performances.">Impact of the atomic layer deposition precursors diffusion on solid-state carbon nanotube based supercapacitors performances.</a> Nanotechnology. 26 (6), 064002 (2015).</li></ol>

The authors have nothing to disclose.

图1显示制造在这项工作中的结构的示意图，并且其被用于4点探针测量。作为电位通过探针携带没有电流测量，准确的电位降（Vħ-V L），在中央CNT束及其触点的金属可以被测量。更大直径的CNT束被用于接触从接触垫的底TiN层，以减少用于当前迫使探头的总电阻并最大化在中央CNT束中的电势降。 如从图2可以看出，在CNT被成功地生...

铜和钨，这是目前用于国家的最先进的非常大规模集成电路（VLSI）技术的互连金属，正在接近的可靠性和电导率1项自己的体能极限。而向下缩放晶体管通常可以提高它们的性能，但实际上增加了电阻和互连的电流密度。这导致互连支配在延迟和功耗2方面的集成电路（IC）的性能。 碳纳米管（CNT）被建议作为替代的Cu和W的金属化，特别是对垂直互连（通孔），为的CNT可以很容易地被生长垂直3。碳纳米管已被证明具有优良的电可靠性，允许高达1000倍更高的电流密度比铜4。此外，CNT不会从表面和晶界散射受到影响，这是增加第r铜esistivity在纳米尺度5。最后，碳纳米管已经被证明是优良的热导体 6，其中所用的热管理在VLSI芯片帮助。 对于碳纳米管在VLSI技术成功的集成是很重要的，对于碳纳米管的生长过程是用半导体制造兼容。这要求使用的材料和这被认为是兼容和可扩展的，以大规模的制造设备的CNT（&lt;400℃）的低温生长。虽然CNT测试过孔许多实例已被证明在文献中7,8,9,10,11,12,13,14，大多数这些使用铁作为催化剂，它被认为是在集成电路中的污染物的制造15。此外，在许多这些作品中使用的生长温度高于400℃的上限要高得多。优选的CNT甚至应种植在350℃以下，为了让拥有现代化的低κ电介质或灵活的集成基材。 在这里，我们提出了一个可扩展的方法生长碳纳米管在温度低至350℃下使用钴作为催化剂 16。该方法是用于制造不同电结构由垂直对准的CNT的集成电路，从互连和电极，以超级电容器和场致发射装置的兴趣。钴催化剂金属通常用在集成电路制造为硅化物的17的制造中，而氮化钛是一种经常用于阻挡材料7。此外，我们证明了制造CNT的测试孔，而只能使用从标准的半导体制造技术的过程。由此，CNT测试过孔被制造，检查通过扫描电子显微镜（SEM）和拉曼光谱，并且电特征。

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			<td height="21" style="height:21px;width:307px;">Si (100) wafer 4&#34;</td>
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			<td>Resisitivity: 2-5 m&#937;-cm, thickness: 525 &#181;m&#160;</td>
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			<td height="21" style="height:21px;width:307px;">Ti-sputtertarget (99.995 % purity)</td>
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			<td style="width:119px;"></td>
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			<td height="21" style="height:21px;width:307px;">Al (1% Si)-sputtertarget (99.999 % purity)</td>
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		<tr height="21">
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			<td style="width:119px;"></td>
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			<td height="21" style="height:21px;width:307px;">HF 0.55%</td>
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			<td height="21" style="height:21px;width:307px;">Tetraethyl orthosilicate (TEOS)</td>
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			<td height="21" style="height:21px;width:307px;">N2 (99.9990%)</td>
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			<td height="21" style="height:21px;width:307px;">O2 (99.9999%)</td>
			<td style="width:188px;">Praxair</td>
			<td style="width:119px;"></td>
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		<tr height="21">
			<td height="21" style="height:21px;width:307px;">CF4 (99.9970%)</td>
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			<td height="21" style="height:21px;width:307px;">CL2 (99.9900%)</td>
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			<td height="21" style="height:21px;width:307px;">HBr (99.9950%)</td>
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		<tr height="21">
			<td height="21" style="height:21px;width:307px;">H2 (99.9950%)</td>
			<td style="width:188px;">Praxair</td>
			<td style="width:119px;"></td>
			<td></td>
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			<td height="21" style="height:21px;width:307px;">C2H2 (99.6000%)</td>
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		<tr height="21">
			<td height="21" style="height:21px;width:307px;">SPTS &#937;mega 201 plasma etcher</td>
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			<td style="width:119px;"></td>
			<td>Used for Si and metal etching</td>
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			<td height="21" style="height:21px;width:307px;">SPTS &#931;igma sputter coater</td>
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			<td></td>
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		<tr height="21">
			<td height="21" style="height:21px;width:307px;">Drytek 384T plasma etcher</td>
			<td style="width:188px;">LAM</td>
			<td style="width:119px;"></td>
			<td>Used for oxide etching</td>
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		<tr height="21">
			<td height="21" style="height:21px;width:307px;">CHA Solution e-beam evaporator</td>
			<td style="width:188px;">CHA</td>
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			<td style="width:119px;"></td>
			<td>Carbon nanotube growth</td>
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			<td style="width:188px;">FEI</td>
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			<td height="21" style="height:21px;width:307px;">Tepla 300</td>
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			<td height="21" style="height:21px;width:307px;">Leitz MPV-SP reflecometer</td>
			<td style="width:188px;">Leitz</td>
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			<td height="21" style="height:21px;width:307px;">Renishaw inVia Raman spectroscope</td>
			<td style="width:188px;">Renishaw</td>
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			<td height="21" style="height:21px;width:307px;">Agilent 4156C parameter spectrum analyzer</td>
			<td style="width:188px;">Agilent</td>
			<td style="width:119px;"></td>
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		<tr height="21">
			<td height="21" style="height:21px;width:307px;">Cascade Microtech probe station</td>
			<td style="width:188px;">Cascade Microtech</td>
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			<td></td>
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fabrication of low temperature carbon nanotube vertical interconnects compatible with semiconductor technology

We demonstrate a method for the low temperature growth (350 &#176;C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive thin-films. Due to the low growth temperature, the process allows integration with modern low-&#954; dielectrics and some flexible substrates. The process is compatible with standard semiconductor fabrication, and a method for the fabrication of electrical 4-point probe test structures for vertical interconnect test structures is presented. Using scanning electron microscopy the morphology of the CNT bundles is investigated, which demonstrates vertical alignment of the CNT and can be used to tune the CNT growth time. With Raman spectroscopy the crystallinity of the CNT is investigated. It was found that the CNT have many defects, due to the low growth temperature. The electrical current-voltage measurements of the test vertical interconnects displays a linear response, indicating good ohmic contact was achieved between the CNT bundle and the top and bottom metal electrodes. The obtained resistivities of the CNT bundle are among the average values in the literature, while a record-low CNT growth temperature was used.

在这项工作中所用的测量结构的设计可以在图1中找到。通过采用这样的结构的碳纳米管束电阻和金属碳纳米管接触电阻的测量可以精确地确定，因为探针和导线电阻被规避。束的电阻为所述CNT束的质量和密度的测量。为了确定不同长度的接触电阻束应测量。 碳纳米管的典型SEM图像，在350℃生长用于从金属化之前的顶部取在45°倾斜60分钟，</stron...

Watch this Scientific Journal Video about Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology at JoVE.com

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

A method for the growth of low temperature vertically-aligned carbon nanotubes, and the subsequent fabrication of vertical interconnect electrical test structures using semiconductor fabrication is presented.

低温碳纳米管垂直互连的制作兼容半导体技术

We demonstrate a method for the low temperature growth (350 &#176;C) of vertically-aligned carbon nanotubes (CNT) bundles on electrically conductive ...

fabrication-low-temperature-carbon-nanotube-vertical-interconnects

Research

JoVE Journal

Engineering

7.6K 次观看.  Delft University of Technology. A method for the growth of low temperature vertically-aligned carbon nanotubes, and the subsequent fabrication of vertical interconnect electrical test structures using semiconductor fabrication is presented.

视频: Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Fabrication, Densification, and Replica Molding of 3D Carbon Nanotube Microstructures

The introduction of new materials and processes to microfabrication has, in large part, enabled many important advances in microsystems, lab-on-a-chip devices, and their applications. In particular, capabilities for cost-effective fabrication of polymer microstructures were transformed by the advent of soft lithography and other micromolding techniques 1, 2, and this led a revolution in applications of microfabrication to biomedical engineering and biology. Nevertheless, it remains challenging to fabricate microstructures with well-defined nanoscale surface textures, and to fabricate arbitrary 3D shapes at the micro-scale. Robustness of master molds and maintenance of shape integrity is especially important to achieve high fidelity replication of complex structures and preserving their nanoscale surface texture. The combination of hierarchical textures, and heterogeneous shapes, is a profound challenge to existing microfabrication methods that largely rely upon top-down etching using fixed mask templates. On the other hand, the bottom-up synthesis of nanostructures such as nanotubes and nanowires can offer new capabilities to microfabrication, in particular by taking advantage of the collective self-organization of nanostructures, and local control of their growth behavior with respect to microfabricated patterns. 
Our goal is to introduce vertically aligned carbon nanotubes (CNTs), which we refer to as CNT "forests", as a new microfabrication material. We present details of a suite of related methods recently developed by our group: fabrication of CNT forest microstructures by thermal CVD from lithographically patterned catalyst thin films; self-directed elastocapillary densification of CNT microstructures; and replica molding of polymer microstructures using CNT composite master molds. In particular, our work shows that self-directed capillary densification ("capillary forming"), which is performed by condensation of a solvent onto the substrate with CNT microstructures, significantly increases the packing density of CNTs. This process enables directed transformation of vertical CNT microstructures into straight, inclined, and twisted shapes, which have robust mechanical properties exceeding those of typical microfabrication polymers. This in turn enables formation of nanocomposite CNT master molds by capillary-driven infiltration of polymers. The replica structures exhibit the anisotropic nanoscale texture of the aligned CNTs, and can have walls with sub-micron thickness and aspect ratios exceeding 50:1. Integration of CNT microstructures in fabrication offers further opportunity to exploit the electrical and thermal properties of CNTs, and diverse capabilities for chemical and biochemical functionalization 3.

We present methods for fabrication of patterned microstructures of vertically aligned carbon nanotubes (CNTs), and their use as master molds for production of polymer microstructures with organized nanoscale surface texture. The CNT forests are densified by condensation of solvent onto the substrate, which significantly increases their packing density and enables self-directed formation of 3D shapes.

制备，致密，副本三维碳纳米管微结构成型

The introduction of new materials and processes to microfabrication has, in large part, enabled many important advances in microsystems, lab-on-a-chip ...

科研

工程学

Dry Oxidation and Vacuum Annealing Treatments for Tuning the Wetting Properties of Carbon Nanotube Arrays

In this article, we describe a simple method to reversibly tune the wetting properties of vertically aligned carbon nanotube (CNT) arrays. Here, CNT arrays are defined as densely packed multi-walled carbon nanotubes oriented perpendicular to the growth substrate as a result of a growth process by the standard thermal chemical vapor deposition (CVD) technique.1,2 These CNT arrays are then exposed to vacuum annealing treatment to make them more hydrophobic or to dry oxidation treatment to render them more hydrophilic. The hydrophobic CNT arrays can be turned hydrophilic by exposing them to dry oxidation treatment, while the hydrophilic CNT arrays can be turned hydrophobic by exposing them to vacuum annealing treatment. Using a combination of both treatments, CNT arrays can be repeatedly switched between hydrophilic and hydrophobic.2 Therefore, such combination show a very high potential in many industrial and consumer applications, including drug delivery system and high power density supercapacitors.3-5
The key to vary the wettability of CNT arrays is to control the surface concentration of oxygen adsorbates. Basically oxygen adsorbates can be introduced by exposing the CNT arrays to any oxidation treatment. Here we use dry oxidation treatments, such as oxygen plasma and UV/ozone, to functionalize the surface of CNT with oxygenated functional groups. These oxygenated functional groups allow hydrogen bond between the surface of CNT and water molecules to form, rendering the CNT hydrophilic. To turn them hydrophobic, adsorbed oxygen must be removed from the surface of CNT. Here we employ vacuum annealing treatment to induce oxygen desorption process. CNT arrays with extremely low surface concentration of oxygen adsorbates exhibit a superhydrophobic behavior.

This article describes a simple method to fabricate vertically aligned carbon nanotube arrays by CVD and to subsequently tune their wetting properties by exposing them to vacuum annealing or dry oxidation treatment.

干式氧化及真空退火处理调整的润湿性能的碳纳米管阵列

In this article, we describe a simple method to reversibly  tune the wetting properties of vertically aligned carbon nanotube (CNT) arrays.  Here, CNT ...

Synthesis and Functionalization of Nitrogen-doped Carbon Nanotube Cups with Gold Nanoparticles as Cork Stoppers

Nitrogen-doped carbon nanotubes consist of many cup-shaped graphitic compartments termed as nitrogen-doped carbon nanotube cups (NCNCs). These as-synthesized graphitic nanocups from chemical vapor deposition (CVD) method were stacked in a head-to-tail fashion held only through noncovalent interactions. Individual NCNCs can be isolated out of their stacking structure through a series of chemical and physical separation processes. First, as-synthesized NCNCs were oxidized in a mixture of strong acids to introduce oxygen-containing defects on the graphitic walls. The oxidized NCNCs were then processed using high-intensity probe-tip sonication which effectively separated the stacked NCNCs into individual graphitic nanocups. Owing to their abundant oxygen and nitrogen surface functionalities, the resulted individual NCNCs are highly hydrophilic and can be effectively functionalized with gold nanoparticles (GNPs), which preferentially fit in the opening of the cups as cork stoppers. These graphitic nanocups corked with GNPs may find promising applications as nanoscale containers and drug carriers.

We discussed the synthesis of individual graphitic nanocups using a series of techniques including chemical vapor deposition, acid oxidation and probe-tip sonication. By citrate reduction of HAuCl4, the graphitic nanocups were effectively corked with gold nanoparticles due to the chemically reactive edges of the cups.

黄金纳米粒子作为软木塞氮掺杂碳纳米管杯的合成与功能构造

Nitrogen-doped carbon  nanotubes consist of many cup-shaped graphitic compartments termed as  nitrogen-doped carbon nanotube cups (NCNCs).  These ...

Writing and Low-Temperature Characterization of Oxide Nanostructures

Oxide nanoelectronics is a rapidly growing field which seeks to develop novel materials with multifunctional behavior at nanoscale dimensions. Oxide interfaces exhibit a wide range of properties that can be controlled include conduction, piezoelectric behavior, ferromagnetism, superconductivity and nonlinear optical properties. Recently, methods for controlling these properties at extreme nanoscale dimensions have been discovered and developed. Here are described explicit step-by-step procedures for creating LaAlO3/SrTiO3 nanostructures using a reversible conductive atomic force microscopy technique. The processing steps for creating electrical contacts to the LaAlO3/SrTiO3 interface are first described. Conductive nanostructures are created by applying voltages to a conductive atomic force microscope tip and locally switching the LaAlO3/SrTiO3 interface to a conductive state. A versatile nanolithography toolkit has been developed expressly for the purpose of controlling the atomic force microscope (AFM) tip path and voltage. Then, these nanostructures are placed in a cryostat and transport measurements are performed. The procedures described here should be useful to others wishing to conduct research in oxide nanoelectronics.

Oxide nanostructures provide new opportunities for science and technology. The interfacial conductivity between LaAlO3 and SrTiO3 can be controlled with near-atomic precision using a conductive atomic force microscopy technique. The protocol for creating and measuring conductive nanostructures at LaAlO3/SrTiO3 interfaces is demonstrated.

写作和氧化物纳米结构的低温特性

Oxide nanoelectronics is a rapidly growing field which seeks to develop novel materials with multifunctional behavior at nanoscale dimensions.  Oxide ...

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal&#8211;semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 &#937;&#8722;1 cm&#8722;1, with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed. Similar results can be obtained for other layer semiconductor materials such as MoS2 and WS2.

We describe the approaches for the device fabrication and electrical characterization of molybdenum diselenide (MoSe2) layer semiconductor nanostructures with different thicknesses. In addition, the fabrication of ohmic contacts for MoSe2-layer nanocrystals by the focused-ion beam deposition method using platinum (Pt) as a contact metal is described.

欧姆接触制造用聚焦离子束技术和电气特性的半导体层的纳米结构

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor ...

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film synthesis) for the purpose of exploratory materials research. Certain materials pose a challenge wherein the traditional bulk Hall bar device fabrication method is insufficient to produce a measureable device for sample transport measurement, principally because the single crystal size is too small to attach wire leads to the sample in a Hall bar configuration. This can be, for example, because the first batch of a new material synthesized yields very small single crystals or because flakes of samples of one to very few monolayers are desired. In order to enable rapid characterization of materials that may be carried out in parallel with improvements to their growth methodology, a method of device fabrication for very small samples has been devised to permit the characterization of novel materials as soon as a preliminary batch has been produced. A slight variation of this methodology is applicable to producing devices using exfoliated samples of two-dimensional materials such as graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides (TMDs), as well as multilayer heterostructures of such materials. Here we present detailed protocols for the experimental device fabrication of fragments and flakes of novel materials with micron-sized dimensions onto substrate and subsequent measurement in a commercial superconducting magnet, dry helium close-cycle cryostat magnetotransport system at temperatures down to 0.300 K and magnetic fields up to 12 T.

We describe the methodology of mechanical exfoliation and deposition of flakes of novel materials with micron-sized dimensions onto substrate, fabrication of experimental device structures for transport experimentation, and the magnetotransport measurement in a dry helium close-cycle cryostat at temperatures down to 0.300 K and magnetic fields up to 12 T.

对于新材料的低温磁输运测量先进的实验方法

Novel electronic materials are often produced for the first time by synthesis processes that yield bulk crystals (in contrast to single crystal thin film ...

Precision Milling of Carbon Nanotube Forests Using Low Pressure Scanning Electron Microscopy

A nanoscale fabrication technique appropriate for milling carbon nanotube (CNT) forests is described. The technique utilizes an environmental scanning electron microscope (ESEM) operating with a low pressure water vapor ambient. In this technique, a portion of the electron beam interacts with the water vapor in the vicinity of the CNT sample, dissociating the water molecules into hydroxyl radicals and other species by radiolysis. The remainder of the electron beam interacts with the CNT forest sample, making it susceptible to oxidation from the chemical products of radiolysis. This technique may be used to trim a selected region of an individual CNT, or it may be used to remove hundreds of cubic microns of material by adjusting ESEM parameters. The machining resolution is similar to the imaging resolution of the ESEM itself. The technique produces only small quantities of carbon residue along the boundaries of the cutting zone, with minimal effect on the native structural morphology of the CNT forest.

Low pressure scanning electron microscopy in a water vapor ambient is used to machine nanoscale to microscale features in carbon nanotube forests.

碳纳米管森林精密铣床使用低压扫描电子显微镜

A nanoscale fabrication technique appropriate for milling carbon nanotube (CNT) forests is described. The technique utilizes an environmental scanning ...

High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia (YSZ) Scaffolds by In Situ Carbon Templating Xerogels

We demonstrate a method for the high temperature fabrication of porous, nanostructured yttria-stabilized-zirconia (YSZ, 8 mol% yttria - 92 mol% zirconia) scaffolds with tunable specific surface areas up to 80 m2&#183;g-1. An aqueous solution of a zirconium salt, yttrium salt, and glucose is mixed with propylene oxide (PO) to form a gel. The gel is dried under ambient conditions to form a xerogel. The xerogel is pressed into pellets and then sintered in an argon atmosphere. During sintering, a YSZ ceramic phase forms and the organic components decompose, leaving behind amorphous carbon. The carbon formed in situ serves as a hard template, preserving a high surface area YSZ nanomorphology at sintering temperature. The carbon is subsequently removed by oxidation in air at low temperature, resulting in a porous, nanostructured YSZ scaffold. The concentration of the carbon template and the final scaffold surface area can be systematically tuned by varying the glucose concentration in the gel synthesis. The carbon template concentration was quantified using thermogravimetric analysis (TGA), the surface area and pore size distribution was determined by physical adsorption measurements, and the morphology was characterized using scanning electron microscopy (SEM). Phase purity and crystallite size was determined using X-ray diffraction (XRD). This fabrication approach provides a novel, flexible platform for realizing unprecedented scaffold surface areas and nanomorphologies for ceramic-based electrochemical energy conversion applications, e.g. solid oxide fuel cell (SOFC) electrodes.

High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia YSZ Scaffolds by In Situ Carbon Templating Xerogels

A protocol for fabricating porous, nanostructured yttria-stabilized-zirconia (YSZ) scaffolds at temperatures between 1,000 &#176;C and 1,400 &#176;C is presented.

通过纳米氧化钇稳定的二氧化锆（YSZ）的支架的高温加工<em&gt;原位</em&gt;碳模板干凝胶

We demonstrate a method for the high temperature fabrication of porous, nanostructured yttria-stabilized-zirconia (YSZ, 8 mol% yttria - 92 mol% zirconia) ...

Fabrication of 3D Carbon Microelectromechanical Systems (C-MEMS)

A wide range of carbon sources are available in nature, with a variety of micro-/nanostructure configurations. Here, a novel technique to fabricate long and hollow glassy carbon microfibers derived from human hairs is introduced. The long and hollow carbon structures were made by the pyrolysis of human hair at 900 &#176;C in a N2 atmosphere. The morphology and chemical composition of natural and pyrolyzed human hairs were investigated using scanning electron microscopy (SEM) and electron-dispersive X-ray spectroscopy (EDX), respectively, to estimate the physical and chemical changes due to pyrolysis. Raman spectroscopy was used to confirm the glassy nature of the carbon microstructures. Pyrolyzed hair carbon was introduced to modify screen-printed carbon electrodes ; the modified electrodes were then applied to the electrochemical sensing of dopamine and ascorbic acid. Sensing performance of the modified sensors was improved as compared to the unmodified sensors. To obtain the desired carbon structure design, carbon micro-/nanoelectromechanical system (C-MEMS/C-NEMS) technology was developed. The most common C-MEMS/C-NEMS fabrication process consists of two steps: (i) the patterning of a carbon-rich base material, such as a photosensitive polymer, using photolithography; and (ii) carbonization through the pyrolysis of the patterned polymer in an oxygen-free environment. The C-MEMS/NEMS process has been widely used to develop microelectronic devices for various applications, including in micro-batteries, supercapacitors, glucose sensors, gas sensors, fuel cells, and triboelectric nanogenerators. Here, recent developments of a high-aspect ratio solid and hollow carbon microstructures with SU8 photoresists are discussed. The structural shrinkage during pyrolysis was investigated using confocal microscopy and SEM. Raman spectroscopy was used to confirm the crystallinity of the structure, and the atomic percentage of the elements present in the material before and after pyrolysis was measured using EDX.

Fabrication of 3D Carbon Microelectromechanical Systems C-MEMS

Long and hollow glassy carbon microfibers were fabricated based on the pyrolysis of a natural product, human hair. The two fabrication steps of carbon microelectromechanical and carbon nanoelectromechanical systems, or C-MEMS and C-NEMS, are: (i) photolithography of a carbon-rich polymer precursor and (ii) pyrolysis of the patterned polymer precursor.

3D碳微机电系统（C-MEMS）的制造

A wide range of carbon sources are available in nature, with a variety of micro-/nanostructure configurations. Here, a novel technique to fabricate long ...

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of nanowires. DEP is used for nanowire analysis, characterization, and for solution-based fabrication of semiconducting devices. The method works by applying an alternating electric field between metallic electrodes. The nanowire formulation is then dropped onto the electrodes which are on an inclined surface to create a flow of the formulation using gravity. The nanowires then align along the gradient of the electric field and in the direction of the liquid flow. The frequency of the field can be adjusted to select nanowires with superior conductivity and lower trap density. 
In this work, flow-assisted DEP is used to create nanowire field effect transistors. Flow-assisted DEP has several advantages: it allows selection of nanowire electrical properties; control of nanowire length; placement of nanowires in specific areas; control of orientation of nanowires; and control of nanowire density in the device. 
The technique can be expanded to many other applications such as gas sensors and microwave switches. The technique is efficient, quick, reproducible, and it uses a minimal amount of dilute solution making it ideal for the testing of novel nanomaterials. Wafer scale assembly of nanowire devices can also be achieved using this technique, allowing large numbers of samples for testing and large-area electronic applications.

In this paper, flow assisted dielectrophoresis is demonstrated for the self-assembly of nanowire devices. The fabrication of a silicon nanowire field effect transistor is shown as an example.

流动辅助介: 一种低成本的制备高性能溶液可纳米线器件的方法

Flow-assisted dielectrophoresis (DEP) is an efficient self-assembly method for the controllable and reproducible positioning, alignment, and selection of ...