作者承认从美国国家航空和航天局（NASA）的玫瑰和APRA计划资金支持。 GC也承认大学空间研究协会在美国航空航天局管理他的任命。

1.微带线谐振器制造14（图3） <ol><li>清洁上硅绝缘体（SOI）晶片，其具有0.45微米厚的硅器件层，用新混合的 H 2 SO 4 :H 2 O 2（3：1）10分钟。然后冲洗用去离子水在晶片10分钟，并干燥用氮气枪。紧接其后的处理，浸在晶片的H 2○：HF（10：1），持续10秒和在去离子水中漂洗5分钟。 </li><li>制造剥离掩模，其由锗（Ge）/阳性光致抗蚀剂如S-1811 15 <ol><li>旋涂用减薄正性光刻胶双层（2份稀​​释剂-P：1份正光致抗蚀剂）的晶片以4000rpm进行30秒，然后电子束沉积的锗。 </li><li>图案葛使用光刻通过首先在晶片上施加六甲基二硅烷（HMDS）处理1分钟，然后剥离该过量以3000rpm进行30秒。 </li><li> SPI以2,000rpm进行30秒和​​烘烤的热板上在110℃下1分钟：N上变薄阳性光致抗蚀剂（1份正光刻胶2份稀释剂-P）。使用掩模对准曝光光刻胶和喷洒四甲基铵氢氧化基础的解决方案，制定有抗拒。 </li><li>反应离子蚀刻锗在70 W·阿什的SF 6 / O 2等离子底层光刻胶与O 2等离子达到削弱光刻胶。 </li><li>直流磁控溅射沉积铌（Nb）的地平面与在500 W和放置晶片的丙酮填充的烧杯内4小时将其提起，3.7 mT的氩（Ar）的。 </li></ol></li><li>旋涂bisbenzocyclobutene（BCB）在4,000rpm下的SOI晶片的铌涂覆的表面上30秒，并以另一硅晶片的一个表面上。与在200℃下3巴的压力粘结两种BCB涂层表面在一起。 </li><li>手动倒装晶片叠层颠倒开始处理SOI晶片的背面。 </li><li>通过使用的 Al 2 O 3浆料机械研磨，接着通过使用Bosch工艺深反应离子蚀刻蚀刻硅处理晶片16蚀刻埋入SiO 2层用H 2 O：HF（10：1）20分钟。 </li><li>存款氮化钼使用DC磁控管反应溅射在700 W和3.3公吨（莫2 N）（氩：N 2分压= 7:1）。以2,000rpm进行30秒：通过在2,000rpm进行30秒旋转，并在180℃下进行2分钟，随后由纺纱烘焙图案的谐振器变薄阳性光致抗蚀剂（1份正光刻胶2份稀释剂-P）。开发中的反应性离子蚀刻机四甲基铵基氢氧化物溶液和灰光致抗蚀剂。蚀刻钼2 N与磷酸类溶液。 </li><li>用于随后通过电子束DEP 2分钟通过以5,000rpm进行30秒的聚甲基丙烯酸甲酯纺纱机和在180℃烘烤制造剥离掩模由锗/ PMMA双层的戈osition。溅射沉积铌传输线和在丙酮剥离（参见步骤1.2，不同的是正性光刻胶被取代的聚甲基丙烯酸甲酯）。 </li><li>在一些实施例中，射频（RF）溅射沉积的 SiO 2，图案它通过用正光阻纺丝和在基于氢氟酸溶液蚀刻。然后，如在步骤1.2详述升空使用锗/正光致抗蚀剂剥离掩膜的溅镀沉积的铌薄膜。 </li></ol> 2.程序的测试包微波振动片的安装<ol><li>设计和机器的测试包，包括金（Au）涂覆的铜腔（用碱和盖），该匹配谐振器芯片尺寸，馈线的输入和输出的位置。注：在壳体的空腔尺寸应被指定来支持在感兴趣的频带最小寄生耦合的单模操作。 </li><li>设计和制造一个受控阻抗微波扇鸥T模块17路由芯片和超小型A版本（SMA）连接器之间的信号。 </li><li>将SMA连接到测试包的输入和输出，使得中心导体销比相应的扇出电路板接触垫对准。施加焊料掩模，以防止短路，并在中心导体销的区域应用焊料。放置在热板上，并加热到200℃〜5分钟的包以熔化焊料。放凉，然后取下阻焊膜。 </li><li>安装振动片进金包覆铜包空腔使得片上馈线输出和输入衬垫接近和对准相应的扇出电路板共面波导（CPW）线。确保与铜剪辑这使得在芯片的角部的边缘接触的芯片。 </li><li>将超导扇出板接触焊盘之间和片上铝丝债券。放置在这里介绍的情况下的最大数目（〜4 - 见<str翁&gt;的〜500-600微米长，〜250微米的高度线接合，图4），以提供SMA连接器输入和输出，芯片上的共面波导的馈线之间的阻抗的匹配。 </li><li>引线接合之后，用万用表检查输入和输出连接器的中心销之间的直流电阻，和一个中心销与地之间，以确认有跨越两个中心销的电连接和中心之间的开放连接线和接地。 </li></ol> 3.程序在低温氦-3微波试验台微波谐振器的安装<ol><li>组装测试平台如在图2中所示的配置，其中一个系列SMA电缆是从室温路由到0.3-K冷阶段，该装置将被安装。 </li><li>安装铜（Cu）和超导铌-钛（的NbTi）电缆， 如图2中所示，以提供低微波损耗，并在情况下的NbTi电缆，低热导率。使用的NbTi电缆作为2-K和0.3-K级之间的热断裂。 </li><li>在关于在谐振器装置的频带为低噪声放大输出线的2-K阶段安装的低温高电子迁移率晶体管（HEMT）放大器和安装的环行器。 </li><li>在输入到该放大器插入在输出线上的低温循环器。 </li><li>安装封装谐振器的设备上用螺栓固定在0.3-K冷阶段支架。 </li><li>连接微波衰减器上的包，以提供匹配的终止和适当的SMA电缆连接到该衰减器输入和包输出的输入侧。确保这些控制阻抗端接是良好匹配，并尽可能靠近被测器件尽可能-它们定义了“设备校准平面”（ 见图2）。 </li><li>特写低温恒温器。按照标准程序来冷却设备s到0.3 K. </li></ol> 4.程序微波谐振器测量<ol><li>设置VNA的扫描在宽的频带（10兆赫 - 8千兆赫，对于这里考虑的设备）的设备被测设计频率。调整对VNA的功率电平为器件适合水平测试（-30〜dBm的，对于这里考虑的设备）。 注：确保输入RF功率电平足够低，以便不超过该超导微波谐振器和超导馈线的临界电流。确保功率电平高到足以提供足够的信噪比。 </li><li>校准灵活的射频电缆下列标准短路负载开路流通（SOLT）过程，继在VNA手册中VNA软件的方向。插入短路，开路，终端和通标准在每个柔性电缆的输出，这将在稍后被连接到其输入路径从矢量网络分析仪和的低温恒温器进行测量。此校准定义了“仪器参考平面”（ 例如 ，参见图2）。 </li><li>以下这个SOLT校准，通过确认传输，S 21，与直通线连接与VNA测定验证校准的保真度，具有低的残留误差（ 即 ，响应于〜0 dB电平和S 11和S 22低， 例如 ≤-50分贝）。 </li><li>柔性电缆连接到低温恒温器的输入和输出线。 </li><li>通过作为微波放大器的公司提供的文档中指定施加所需的直流偏置电压接通低温微波放大器。 </li><li>首先，完成VNA的宽带扫描（10兆赫- 8 GHz的，对于这里考虑的设备），观察在S 21的基准结构，寻找任何尖锐的高Q &lt;/ em&gt;的指示微波谐振器的结构。 </li><li>然后，缩小的频率范围（至〜2 - 4千兆赫，对于这里考虑的设备），并调整数据点（这里考虑的设备〜30,000）的VNA的数目扫描整个谐振频带。使用的频带宽度足以购买配合提供足够的基线跨度此基准进行原位校准（见言讨论）。 注意：根据噪声电平，增加平均的次数，或者减少IF带宽来改善信号对噪声。 </li><li>保存复杂的传输数据，这些数据VNA扫描到文件用于测量后现场校准，以及分析和质量因素及共振频率提取11 </li></ol>

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作者宣称，他们没有竞争的经济利益。

单翻盖制造方法提供了在薄0.45微米的单晶Si衬底的两侧实现超导谐振器的装置。一个可以被激励以使用单晶硅电介质，因为它具有比大小小于沉积电介质（例如Si 3 N 4）与4.0-6.5 GHz的范围&lt;1×10的损耗角正切低损失的顺序多- 5 23-24图案的能力，双方拥有的该基板允许一个采用微带谐振器的设计，它提供了优秀的抗杂散光和低谐振到谐振器的串扰。所述的剥离技术能?...

在天体物理学仪器的进步已经最近推出超导微波谐振器，用于检测红外光的1 - 4所述的超导谐振器将向能量E的红外辐射响应= HV&gt;2Δ（其中，h是普朗克常数，v是辐射频率和Δ为超导隙能量）。当谐振器冷却到远低于超导临界温度的温度，这一事件打破辐射在谐振器体积库柏对并生成准粒子激发。在准粒子激发的密度的增加改变了动能电感，并且因此超导体的复杂表面阻抗。该光学响应被观察为在谐振频率向低频的偏移和在谐振器的品质因数的降低。在用于微波显象管的规范读出方案抽动电感检测器（MKID），所述谐振器被耦合到微波馈线和一个监视通过该馈线在共振单个微波频率音调的复传输。这里，光反应被观察为在振幅和变速器5（ 图1）的相两者的变化。频域复用方案是能够读出成千上万的谐振器的阵列。6-7 成功地设计和实现基于超导谐振器仪表，需要准确而有效地进行表征这些共振结构的属性。例如，噪声特性的精确测量，质量因子Q，共振频率（包括其温度依赖性）和超导谐振器的光学响应特性期望在MKID器件物理，8量子计算，9的上下文中和低的测定TE温度的材料特性。10 在所有这些情况下，电路的复杂的传输散射参数的测量是需要的。这个工作集中在谐振器的复杂的传输系数的确定，S 21，其幅度和相位可以与矢量网络分析仪（VNA）测定。理想的是，VNA基准面（或测试端口）将直接连接到被测器件（DUT），但低温环境通常需要使用额外的传输线结构来实现RT之间（〜300K）的热断裂和寒冷的阶段（〜0.3 K的这项工作; 见图 URE 2）。可能需要额外的微波元件，如定向耦合器，循环器，隔离器，放大器，衰减器，和相关的相互连接的电缆，以适当地制备，激发，读出并偏压感兴趣的设备。该相速度和这些部件的尺寸从室温到低温的冷却时发生变化，因此，它们会影响在装置校准平面所观察到的响应。仪器和设备的校准平面影响复数增益和之间的这些中间组件需要适当地占所测量的响应的解释。11 在理论上，需要一种方案，设置测量参考平面中，相同的校准过程中所用的，在DUT。为了达到这个目标，我们可以测量在多个冷却起伏校准标准;然而，这造成对VNA的稳定性和低温仪器的重复性的限制，这是很难达到的。为了减轻这些问题，人们可以放置在冷却的测试环境的必要标准，并在它们之间切换。这是，例如，类似的是，在微波探针台发现，其中样品和校准标准是由一个连续的液体氦流量或封闭循环制冷系统冷却到4K的12这种方法是在子开尔文的温度证实，但需要在低功率，高性能的微波开关测试感兴趣的乐队。13 因此原位校准过程所需的占VNA的参考平面和设备校准平面（ 图 URE 2）和一种克服上述方法的局限性之间的器乐透射响应。这种低温校准方法，提出并在Cataldo的等 11中详细讨论的，允许一个宽比谐振线宽度和谐振器之间的间距为约1％的精度在一个频率范围的特征的多个谐振器。本文将重点放在样品制作和准备的细节aration流程，试验测试设置和测量程序用于与平面线的几何形状来表征超导微波谐振器。11

<table border="0" cellpadding="0" cellspacing="0" width="715">
	<tbody>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Microposit S-1811 Photoresist</td>
			<td style="width:111px;">Shipley</td>
			<td style="width:187px;"></td>
			<td style="width:201px;"></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">BCB</td>
			<td style="width:111px;">Dow</td>
			<td style="width:187px;"></td>
			<td style="width:201px;">3022-35</td>
		</tr>
		<tr height="45">
			<td height="45" style="height:45px;width:216px;">SOI wafers</td>
			<td style="width:111px;">SOITec</td>
			<td style="width:187px;"></td>
			<td style="width:201px;">Fabricated with SmartCutTM process</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Mo</td>
			<td style="width:111px;">Kamis</td>
			<td style="width:187px;"></td>
			<td style="width:201px;">99.99%</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Nb</td>
			<td style="width:111px;">Kamis</td>
			<td style="width:187px;"></td>
			<td style="width:201px;">99.95% (excludes Ta)</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">E-6 metal etch w/AES</td>
			<td style="width:111px;">Fujifilm</td>
			<td style="width:187px;"></td>
			<td style="width:201px;">CPG Grade</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Acetone</td>
			<td style="width:111px;">JT Baker</td>
			<td style="width:187px;">9005-05</td>
			<td style="width:201px;">CMOS Grade</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">HF dip (1:10)</td>
			<td style="width:111px;">JT Baker</td>
			<td style="width:187px;">5397-03</td>
			<td style="width:201px;"></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">PMMA</td>
			<td style="width:111px;">Microchem</td>
			<td style="width:187px;"></td>
			<td style="width:201px;">950 PMMA A2</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">GE 7031</td>
			<td style="width:111px;">General Electric</td>
			<td style="width:187px;"></td>
			<td style="width:201px;">Low-temperature adhesive</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Cryogenic Microwave Amplifier</td>
			<td style="width:111px;">MITEQ</td>
			<td>AF S3-02000400-08-CR-4</td>
			<td style="width:201px;">2-4 GHz, gain ~30dB</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">NbTi Semi-rigid SMA cables</td>
			<td style="width:111px;">Coax. Co.</td>
			<td style="width:187px;">SC-086/50-NbTi-NbTi</td>
			<td style="width:201px;"></td>
		</tr>
		<tr height="42">
			<td height="42" style="height:42px;width:216px;">Circulator</td>
			<td>PamTech</td>
			<td>CTD1229K</td>
			<td style="width:201px;">return loss &#62; -20 dB from 2-4 GHz</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">RF attenuator</td>
			<td>Weinschel</td>
			<td>Model-4M</td>
			<td style="width:201px;">7 dB attenuation</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Flexible SMA cables</td>
			<td style="width:111px;">Teledyne-Storm</td>
			<td>R94-240</td>
			<td style="width:201px;">ACCU-TEST</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Vector Network Analyzer</td>
			<td style="width:111px;">Agilent</td>
			<td>N5242A PNA-X</td>
			<td style="width:201px;"></td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">Liquid He-4 cryogen</td>
			<td>Praxair&#160;</td>
			<td style="width:187px;"></td>
			<td style="width:201px;"></td>
		</tr>
		<tr height="25">
			<td height="25" style="height:25px;width:216px;">Liquid N2 cryogen</td>
			<td style="width:111px;">Praxair&#160;</td>
			<td style="width:187px;"></td>
			<td style="width:201px;"></td>
		</tr>
	</tbody>
</table>

fabrication and characterization of superconducting resonators

超导微波谐振器是感兴趣于广泛的应用，包括它们作为微波动力学电感检测器（MKIDs）检测微弱天体物理签名的使用，以及用于量子计算的应用和材料表征。在本文中，程序呈现为薄膜超导微波谐振器的制造和表征。的制造方法允许为实现超导传输线谐振器与一个原子级平滑的单晶硅电介质的两面特征的。这个工作描述了安装谐振器装置的送入低温微波测试平台和用于下面的超导转变温度降温的过程。低温微波测试平台的设定最多允许一个做这些谐振器装置的复杂微波传输的仔细的测量，使公关的提取超导线和电介质基板（ 例如 ，内部质量的因素，损失和动能电感分数），这对于装置的设计和性能的重要的operties。

在0.45微米的单晶硅电介质制成的半波的Mo 2 N谐振器（ 图5）的响应与这种方法进行了验证。在这种情况下，耦合到铌共面波导（CPW）的馈线用于读出经由电容耦合通过溅射沉积的 SiO 2电介质实现的，在为“H”形区域在共振器的敞开端部之一（见协议第1.6节）。在其他情况下，电容性耦合至馈线通过在铌接地平面除去区域来实现的。在<...

Watch this Scientific Journal Video about Fabrication and Characterization of Superconducting Resonators at JoVE.com

Fabrication and Characterization of Superconducting Resonators

超导微波谐振器是检测的光，量子计算的应用和材料表征的兴趣。这项工作提出了制造和超导微波谐振器散射参数特性的详细过程。

制备与表征超导谐振器的

Superconducting microwave resonators are of interest for a wide range of applications, including for their use as microwave kinetic inductance detectors ...

fabrication-and-characterization-of-superconducting-resonators

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10.3K 次观看.  NASA Goddard Space Flight Center. 超导微波谐振器是检测的光，量子计算的应用和材料表征的兴趣。这项工作提出了制造和超导微波谐振器散射参数特性的详细过程。 

视频: Fabrication and Characterization of Superconducting Resonators

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

Metamaterials (MM), artificial materials engineered to have properties that may not be found in nature, have been widely explored since the first theoretical1 and experimental demonstration2 of their unique properties. MMs can provide a highly controllable electromagnetic response, and to date have been demonstrated in every technologically relevant spectral range including the optical3, near IR4, mid IR5 , THz6 , mm-wave7 , microwave8 and radio9 bands. Applications include perfect lenses10, sensors11, telecommunications12, invisibility cloaks13 and filters14,15. We have recently developed single band16, dual band17 and broadband18 THz metamaterial absorber devices capable of greater than 80% absorption at the resonance peak. The concept of a MM absorber is especially important at THz frequencies where it is difficult to find strong frequency selective THz absorbers19. In our MM absorber the THz radiation is absorbed in a thickness of ~ &lambda;/20, overcoming the thickness limitation of traditional quarter wavelength absorbers. MM absorbers naturally lend themselves to THz detection applications, such as thermal sensors, and if integrated with suitable THz sources (e.g. QCLs), could lead to compact, highly sensitive, low cost, real time THz imaging systems.

This protocol outlines the simulation, fabrication and characterization of THz metamaterial absorbers. Such absorbers, when coupled with an appropriate sensor, have applications in THz imaging and spectroscopy.

模拟，太赫兹超材料吸收器的制备与表征

Metamaterials (MM),  artificial materials engineered to have properties that may not be found in  nature, have been widely explored since the first ...

科研

工程学

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view and for its considerable potential for practical applications. Slow light photonic crystal waveguides, in particular, have played a major part and have been successfully employed for delaying optical signals1-4 and the enhancement of both linear5-7 and nonlinear devices.8-11
Photonic crystal cavities achieve similar effects to that of slow light waveguides, but over a reduced band-width. These cavities offer high Q-factor/volume ratio, for the realization of optically12 and electrically13 pumped ultra-low threshold lasers and the enhancement of nonlinear effects.14-16 Furthermore, passive filters17 and modulators18-19 have been demonstrated, exhibiting ultra-narrow line-width, high free-spectral range and record values of low energy consumption.
To attain these exciting results, a robust repeatable fabrication protocol must be developed. In this paper we take an in-depth look at our fabrication protocol which employs electron-beam lithography for the definition of photonic crystal patterns and uses wet and dry etching techniques. Our optimised fabrication recipe results in photonic crystals that do not suffer from vertical asymmetry and exhibit very good edge-wall roughness. We discuss the results of varying the etching parameters and the detrimental effects that they can have on a device, leading to a diagnostic route that can be taken to identify and eliminate similar issues.
The key to evaluating slow light waveguides is the passive characterization of transmission and group index spectra. Various methods have been reported, most notably resolving the Fabry-Perot fringes of the transmission spectrum20-21 and interferometric techniques.22-25 Here, we describe a direct, broadband measurement technique combining spectral interferometry with Fourier transform analysis.26 Our method stands out for its simplicity and power, as we can characterise a bare photonic crystal with access waveguides, without need for on-chip interference components, and the setup only consists of a Mach-Zehnder interferometer, with no need for moving parts and delay scans.
When characterising photonic crystal cavities, techniques involving internal sources21 or external waveguides directly coupled to the cavity27 impact on the performance of the cavity itself, thereby distorting the measurement. Here, we describe a novel and non-intrusive technique that makes use of a cross-polarised probe beam and is known as resonant scattering (RS), where the probe is coupled out-of plane into the cavity through an objective. The technique was first demonstrated by McCutcheon et al.28 and further developed by Galli et al.29

Use of photonic crystal slow light waveguides and cavities has been widely adopted by the photonics community in many differing applications. Therefore fabrication and characterization of these devices are of great interest. This paper outlines our fabrication technique and two optical characterization methods, namely: interferometric (waveguides) and resonant scattering (cavities).

光子晶体慢光波导和腔体的制备与表征

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view ...

Microwave Photonics Systems Based on Whispering-gallery-mode Resonators

Microwave photonics systems rely fundamentally on the interaction between microwave and optical signals. These systems are extremely promising for various areas of technology and applied science, such as aerospace and communication engineering, sensing, metrology, nonlinear photonics, and quantum optics. In this article, we present the principal techniques used in our lab to build microwave photonics systems based on ultra-high Q whispering gallery mode resonators. First detailed in this article is the protocol for resonator polishing, which is based on a grind-and-polish technique close to the ones used to polish optical components such as lenses or telescope mirrors. Then, a white light interferometric profilometer measures surface roughness, which is a key parameter to characterize the quality of the polishing. In order to launch light in the resonator, a tapered silica fiber with diameter in the micrometer range is used. To reach such small diameters, we adopt the "flame-brushing" technique, using simultaneously computer-controlled motors to pull the fiber apart, and a blowtorch to heat the fiber area to be tapered. The resonator and the tapered fiber are later approached to one another to visualize the resonance signal of the whispering gallery modes using a wavelength-scanning laser. By increasing the optical power in the resonator, nonlinear phenomena are triggered until the formation of a Kerr optical frequency comb is observed with a spectrum made of equidistant spectral lines. These Kerr comb spectra have exceptional characteristics that are suitable for several applications in science and technology. We consider the application related to ultra-stable microwave frequency synthesis and demonstrate the generation of a Kerr comb with GHz intermodal frequency.

The customized techniques developed in our lab to build microwave photonics systems based on ultra-high Q whispering gallery mode resonators are presented. The protocols to obtain and characterize these resonators are detailed, and an explanation of some of their applications in microwave photonics is given.

基于微波光子系统回音壁模式谐振器

Microwave photonics systems rely fundamentally on the interaction between microwave and optical signals. These systems are extremely promising for various ...

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

In this video article we present a detailed demonstration of a highly efficient method for generating terahertz waves. Our technique is based on photoconduction, which has been one of the most commonly used techniques for terahertz generation 1-8. Terahertz generation in a photoconductive emitter is achieved by pumping an ultrafast photoconductor with a pulsed or heterodyned laser illumination. The induced photocurrent, which follows the envelope of the pump laser, is routed to a terahertz radiating antenna connected to the photoconductor contact electrodes to generate terahertz radiation. Although the quantum efficiency of a photoconductive emitter can theoretically reach 100%, the relatively long transport path lengths of photo-generated carriers to the contact electrodes of conventional photoconductors have severely limited their quantum efficiency. Additionally, the carrier screening effect and thermal breakdown strictly limit the maximum output power of conventional photoconductive terahertz sources. To address the quantum efficiency limitations of conventional photoconductive terahertz emitters, we have developed a new photoconductive emitter concept which incorporates a plasmonic contact electrode configuration to offer high quantum-efficiency and ultrafast operation simultaneously. By using nano-scale plasmonic contact electrodes, we significantly reduce the average photo-generated carrier transport path to photoconductor contact electrodes compared to conventional photoconductors 9. Our method also allows increasing photoconductor active area without a considerable increase in the capacitive loading to the antenna, boosting the maximum terahertz radiation power by preventing the carrier screening effect and thermal breakdown at high optical pump powers. By incorporating plasmonic contact electrodes, we demonstrate enhancing the optical-to-terahertz power conversion efficiency of a conventional photoconductive terahertz emitter by a factor of 50 10.

We describe methods for the design, fabrication, and experimental characterization of plasmonic photoconductive emitters, which offer two orders of magnitude higher terahertz power levels compared to conventional photoconductive emitters.

电浆光电导太赫兹发射器的设计，制造和实验表征

In this video article we present a detailed demonstration of a highly efficient method for generating terahertz waves. Our technique is based on ...

Fabrication and Characterization of Disordered Polymer Optical Fibers for Transverse Anderson Localization of Light

We develop and characterize a disordered polymer optical fiber that uses transverse Anderson localization as a novel waveguiding mechanism. The developed polymer optical fiber is composed of 80,000 strands of poly (methyl methacrylate) (PMMA) and polystyrene (PS) that are randomly mixed and drawn into a square cross section optical fiber with a side width of 250 &mu;m. Initially, each strand is 200 &mu;m in diameter and 8-inches long. During the mixing process of the original fiber strands, the fibers cross over each other; however, a large draw ratio guarantees that the refractive index profile is invariant along the length of the fiber for several tens of centimeters. The large refractive index difference of 0.1 between the disordered sites results in a small localized beam radius that is comparable to the beam radius of conventional optical fibers. The input light is launched from a standard single mode optical fiber using the butt-coupling method and the near-field output beam from the disordered fiber is imaged using a 40X objective and a CCD camera. The output beam diameter agrees well with the expected results from the numerical simulations. The disordered optical fiber presented in this work is the first device-level implementation of 2D Anderson localization, and can potentially be used for image transport and short-haul optical communication systems.

We develop and characterize a disordered polymer optical fiber that uses transverse Anderson localization as a novel waveguiding mechanism. This microstructured fiber can transport a small localized beam with a radius that is comparable to the beam radius of conventional optical fibers.

无序横向安德森本地化光聚合物光纤的制备和表征

We develop and characterize a disordered polymer optical fiber that uses transverse Anderson localization as a novel waveguiding mechanism. The developed ...

Fabrication and Testing of Microfluidic Optomechanical Oscillators

Cavity optomechanics experiments that parametrically couple the phonon modes and photon modes have been investigated in various optical systems including microresonators. However, because of the increased acoustic radiative losses during direct liquid immersion of optomechanical devices, almost all published optomechanical experiments have been performed in solid phase. This paper discusses a recently introduced hollow microfluidic optomechanical resonator. Detailed methodology is provided to fabricate these ultra-high-Q microfluidic resonators, perform optomechanical testing, and measure radiation pressure-driven breathing mode and SBS-driven whispering gallery mode parametric vibrations. By confining liquids inside the capillary resonator, high mechanical- and optical- quality factors are simultaneously maintained.

Parametric optomechanical excitations have recently been experimentally demonstrated in microfluidic optomechanical resonators by means of optical radiation pressure and stimulated Brillouin scattering. This paper describes the fabrication of these microfluidic resonators along with methodologies for generating and verifying optomechanical oscillations.

制造和微流控光机振荡器测试

Cavity optomechanics experiments that parametrically couple the phonon modes and photon modes have been investigated in various optical systems including ...

Patterning via Optical Saturable Transitions - Fabrication and Characterization

This protocol describes the fabrication and characterization of nanostructures using a novel nanolithographic technique called Patterning via Optical Saturable Transitions (POST). In this technique the chemical properties of organic photochromic molecules that undergo single-photon reactions are exploited, enabling rapid top-down nanopatterning over large areas at low light intensities, thereby, allowing for the circumvention of the far-field diffraction barrier.4 Simple, cost-effective, high throughput and resolution alternatives to nanopatterning are being explored, such as, two-photon polymerization5,6, beam pen lithography (BPL)7, scanning electron beam lithography (SEBL), and focused ion beam (FIB) patterning. However, multi-photon approaches require high light intensities, which limit their potential for high throughput and offer low image contrast. Although, electron and ion beam lithographic processes offer increased resolution, the serial nature of the process is limited to slow writing speeds, which also prevents patterning of features over large areas. Beam-pen lithography is an approach towards parallel near-field optical lithography. However, the gap between the source of the beam and the surface of the photoresist needs to be controlled extremely precisely for good pattern uniformity and this is very challenging to accomplish for large arrays of beams. Patterning via Optical Saturable Transitions (POST) is an alternative optical nanopatterning technique for patterning sub-wavelength features1-3. Since this technique uses single photons instead of electrons, it is extremely fast and does not require high light intensities1-3, opening the door to massive parallelization.

We report that the diffraction limit of conventional optical lithography can be overcome by exploiting the transitions of organic photochromic derivatives induced by their photoisomerization at low light intensities.1-3 This paper outlines our fabrication technique and two locking mechanisms, namely: dissolution of one photoisomer and electrochemical oxidation.

通过光学吸收跃迁图案 - 制备与表征

This protocol describes the fabrication and characterization of nanostructures using a novel nanolithographic technique called Patterning via Optical ...

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal&#8211;semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 &#937;&#8722;1 cm&#8722;1, with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed. Similar results can be obtained for other layer semiconductor materials such as MoS2 and WS2.

We describe the approaches for the device fabrication and electrical characterization of molybdenum diselenide (MoSe2) layer semiconductor nanostructures with different thicknesses. In addition, the fabrication of ohmic contacts for MoSe2-layer nanocrystals by the focused-ion beam deposition method using platinum (Pt) as a contact metal is described.

欧姆接触制造用聚焦离子束技术和电气特性的半导体层的纳米结构

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor ...

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices have used devices prepared by spin coating, a process that is not amenable to large-scale fabrication. This mismatch in device fabrication makes it difficult to translate quantitative results obtained in the laboratory to the commercial level, making optimization difficult. Using a mini-slot die coater, this mismatch can be resolved by translating the commercial process to the laboratory and characterizing the structure formation in the active layer of the device in real time and in situ as films are coated onto a substrate. The evolution of the morphology was characterized under different conditions, allowing us to propose a mechanism by which the structures form and grow. This mini-slot die coater offers a simple, convenient, material efficient route by which the morphology in the active layer can be optimized under industrially relevant conditions. The goal of this protocol is to show experimental details of how a solar cell device is fabricated using a mini-slot die coater and technical details of running in situ structure characterization using the mini-slot die coater.

Printing Fabrication of Bulk Heterojunction Solar Cells and In Situ Morphology Characterization

Here, we present a protocol to fabricate organic thin film solar cells using a mini-slot die coater and related in-line structure characterizations using synchrotron scattering techniques.

散装异质结太阳能电池的印刷和制作<em&gt;原位</em&gt;形态特征

Polymer-based materials hold promise as low-cost, flexible efficient photovoltaic devices. Most laboratory efforts to achieve high performance devices ...

Stimulated Stokes and Antistokes Raman Scattering in Microspherical Whispering Gallery Mode Resonators

Dielectric microspheres can confine light and sound for a length of time through high quality factor whispering gallery modes (WGM). Glass microspheres can be thought as a store of energy with a huge variety of applications: compact laser sources, highly sensitive biochemical sensors and nonlinear phenomena. A protocol for the fabrication of both the microspheres and coupling system is given. The couplers described here are tapered fibers. Efficient generation of nonlinear phenomena related to third order optical non-linear susceptibility &#935;(3) interactions in triply resonant silica microspheres is presented in this paper. The interactions here reported are: Stimulated Raman Scattering (SRS), and four wave mixing processes comprising Stimulated Anti-stokes Raman Scattering (SARS). A proof of the cavity-enhanced phenomenon is given by the lack of correlation among the pump, signal and idler: a resonant mode has to exist in order to obtain the pair of signal and idler. In the case of hyperparametric oscillations (four wave mixing and stimulated anti-stokes Raman scattering), the modes must fulfill the energy and momentum conservation and, last but not least, have a good spatial overlap.

Efficient generation of nonlinear phenomena related to third order optical non-linear susceptibility &#935;(3) interactions in triply resonant silica microspheres is presented in this paper. The interactions here reported are: Stimulated Raman Scattering (SRS), and four wave mixing processes comprising Stimulated Anti-stokes Raman Scattering (SARS).

刺激斯托克斯和反斯托克斯拉曼散射在微球形回音壁模式谐振器

Dielectric microspheres can confine light and sound for a length of time through high quality factor whispering gallery modes (WGM). Glass microspheres ...