这项工作由欧洲研究理事会（ERC）根据欧盟的Horizno 2020研究与创新计划（第803004号）资助。

1. 准备解决方案
<ol><li>在将凝胶薄膜放在放置实验室平衡和磁搅拌器的烟雾罩中之前，在 18 小时前准备含有前水解四乙基正石 （TEOS） 的溶液。<ol>
<li>将0.7克聚乙二醇六甲醚（Brij-58）和23.26克乙醇加入50mL瓶中，并关闭瓶子盖，搅拌至Brij完全溶解。</li>
		<li>在步骤 1.1.1 中加入 1.5 克 HCL 35%， 将其关闭并搅拌 20 s。</li>
		<li>在步骤 1.1.2 中将 4.22 克 TEOS 添加到烧瓶中，将其关闭，让它搅拌 18 小时。</li>
	</ol>
</li>
	<li>在凝胶薄膜生产前准备 1 M 水溶液 Sr2+， 因为成熟的溶液容易以 Sr 盐的形式重新沉淀。<ol>
<li>重量 2.67 克 SrCl2+6H2O 在 10 毫升体积烧瓶。</li>
		<li>在步骤 1.2.1 将 10 mL 超纯水（例如 Milli-Q）加入至 10 mL 的烧瓶中，用塑料盖关闭烧瓶，轻轻摇动烧瓶以溶解氯化钛。</li>
	</ol>
</li>
	<li>将 Sr2+ 1 M 水溶液中的 275 μL 添加到包含步骤 1.1 中准备的溶液的 10 mL 瓶中，搅拌溶液 10 分钟。</li>
</ol>2. 制备多二甲基硅氧烷 （PDMS） 模板
<ol><li>第 1.3 步后准备 PDMS 解决方案。<ol>
<li>将固化剂的 1 部分与平衡器中的 10 部分弹性体混合。用玻璃棒搅拌混合物，直到获得气泡的均匀分布，并在真空室中将其取出。</li>
	</ol>
</li>
	<li>使用 PDMS 解决方案复制硅主。请注意，对于此工作，我们使用了由直径、高度和分离距离为 1μm 的柱子组成的硅图案大师。<ol>
<li>将带结构化面罩的硅主放在塑料盒中，并给盒子中填充 PDMS 解决方案。</li>
		<li>将塑料盒在 70 °C 下引入熔炉 2 小时，以获得坚固的 PDMS 模板。</li>
		<li>将 PDMS 模板和硅主板分开。使用刀片将 PDMS 模板切割到所需的尺寸，并将其保存在干净的盒子中。</li>
	</ol>
</li>
</ol>3. 通过浸涂在 SOI （100） 基板上的凝胶薄膜沉积
<ol><li>基材的准备<ol>
<li>通过使用钻石尖端将厚度为 2/0.5/0.67 μm（Si/SiO 2/Si） 的 2 英寸 p 型 SOI 晶圆切割，准备 2 厘米 x6厘米大小的基材。请注意，硅器件层的电导率必须在 1 到 10 Ω/厘米之间。</li>
		<li>在食人鱼溶液中引入基质20分钟，以消除可能的聚合物残留物。</li>
		<li>用DI水清洁，然后用乙醇清洁，让它们干燥或使用氮气流动。此步骤应在步骤 1.3 之后执行。</li>
	</ol>
</li>
	<li>沉积含有前水解四乙基矫形器 （TEOS）、Brij-58 硫化物和 SrCl2 6H2O 的溶液。<ol>
<li>为了获得均匀的二氧化硅薄膜，在相对湿度为40%和25°C的温度条件下设置浸衣机室。</li>
		<li>将大小约为 5 厘米 x 1 厘米 x 8 厘米的烧杯放在悬挂在浸涂臂上的 SOI 基板下方，并在浸入和取款时建立 300 mm/min 的速度的浸涂顺序。将沉浸时间（最终位置的时间）设置为零。</li>
		<li>将第 1.3 步准备的解决方案填充烧杯，等待相对湿度温度稳定，即分别为 40% 和 25 °C。</li>
		<li>执行单浸涂层，并等待，直到薄膜变得均匀。</li>
		<li>将 SOI 基板引入 450 °C 的熔炉中 5 分钟，使凝胶薄膜获得 200 nm 的厚度。</li>
		<li>重复步骤 3.2.3 和 3.2.4 两倍以上，以产生厚度约为 600 nm 的薄膜。为确保解决方案的稳定性，应在 1 小时内执行重复过程。</li>
	</ol>
</li>
</ol>4. 通过软印纹光刻表面微/纳米结构
<ol><li>在相对湿度为 40% 和 25 °C 的温度条件下，在薄膜表面准备微/纳米结构。<ol>
<li>重复步骤 3.2.3 将新胶片存放在 SOI 基板上。</li>
		<li>将第 3.2.1 步之后的 SOI 基板放在平坦的表面上，并在溶胶蒸发时将第 2.2 步制备的 PDMS 模具放在 SOI 基板上。</li>
		<li>将带有 PDMS 模具的 SOI 基板放入 70 °C 的熔炉中 1 分钟，然后在 140 °C 下放入第二个熔炉中 2 分钟。然后，让它冷却下来。</li>
		<li>取出 PDMS 模具，在 SOI 基板上获取微/纳米结构凝胶薄膜。</li>
		<li>将 SOI 基板引入 450 °C 的熔炉中 5 分钟，以巩固 600 nm 高度的微/纳米结构凝胶薄膜。</li>
	</ol>
</li>
</ol>5. 热处理凝胶薄膜结晶
<ol><li>对 SOI 上的凝胶薄膜进行热处理（100）。<ol>
<li>将管状炉子加热从室温到 1000 °C。</li>
		<li>将放置在陶瓷船中的样品引入 1000 °C 的熔炉 5 小时。在整个热处理过程中，不要覆盖管状工作管，以便用空气使炉子饱和。最后，在没有任何编程坡道的情况下冷却炉子，达到室温。</li>
	</ol>
</li>
</ol>6. 光刻面罩布局设计
此工艺中使用的面膜专为 SOI 基板上的设备制造而设计，带有表观纳米结构石英。所有的制造过程都在石英一侧进行。该面罩的设计方式是，每一步都需要使用负色调抵抗。面罩按照以下解释分为四个不同的步骤。
<ol><li>为石英图案，以确定悬臂的形状，以及 30 μm x 30 μm 方形接触区域。例如，120 μm x 160 μm 区域中的 40 μm x 100 μm 大小矩形悬臂区域使用负抗性保护，其余区域蚀刻至硅层。</li>
	<li>实现顶部和底部电极。顶部电极在矩形悬臂区域上图案，底部电极在 30 μm x 30 μm 蚀刻区域的 2 μm 厚硅层上图案。顶部接触的宽度比图案悬臂区域小 4 μm，底部接触的大小大于第 1 步中的 30 μm x 30 μm 方形蚀刻区域。</li>
	<li>在矩形悬臂周围 120μm x 160 μm U 形区域中蚀刻所有 2 μm 厚的硅层。蚀刻区域再次为 U 形，但每侧小 4 μm，以保护悬臂区域免受最后一步的 HF 攻击。</li>
	<li>释放悬臂与BOE蚀刻的SiO2。受保护的悬臂面积比实际悬臂区域大 2 μm。最重要的是保护悬臂的表面和空白。</li>
</ol>7. 用食人鱼溶液清洁悬臂微压加工过程中的石英样品
<ol><li>在环境温度下，将10毫升过氧化氢（H2O2）加入20毫升硫酸（H2SO4），准备食人鱼溶液。这种混合物产生热反应。<ol>
<li>将样品放入此溶液中 10 分钟，以清洁所有有机残留物。</li>
		<li>用DI水冲洗样品，用氮干燥。</li>
	</ol>
</li>
</ol>8. 第 1 步:石英薄膜上图案悬臂形状
<ol><li>第一个光刻过程<ol>
<li>用丙酮、IPA 冲洗样品，然后吹干氮。</li>
		<li>将样品放在 140°C 的热板上，进行 10 分钟的除湿。</li>
		<li>旋转AZ2070负光照面以4000 rpm的速度为30s。</li>
		<li>将样品放在热板上，在 115 °C 下软化 60 s。</li>
		<li>以 37.5 mJ.cm-2 紫外线剂量暴露样品 5s。</li>
		<li>将样品放在热板上，在 60 s 的 115 °C 下进行暴露后烘烤。</li>
		<li>在 MIF 726 开发中开发 100s 在环境温度下，然后冲洗 DI 水并吹干氮。预期厚度为 5.5 μm。</li>
		<li>将样品放在 125 °C 的加热板上 10 分钟，以硬化电阻。</li>
	</ol>
</li>
	<li>石英层的活性离子蚀刻 （RIE）<ol>
<li>使用 RIE 的石英直到硅层，气体流速为 60 sccm CHF3、20sccm 02和 10 sccm Ar，功率为 100 W RF。</li>
	</ol>
</li>
	<li>清洁电阻残留物<ol>
<li>用等离子体以 90 sccm 02 的流速清洁 5 分钟。</li>
		<li>如果第一个清洁步骤不够，请将样品留在 80 °C 的去除器 PG 中，直到删除所有电阻。</li>
		<li>然后，将样品放入食人鱼溶液中（20毫升硫酸H2SO4 + 10 mL 过氧化氢H2O2）10分钟。然后，冲洗 DI 水，用氮气吹干。</li>
	</ol>
</li>
</ol>9. 第 2 步:实现底部和顶部电极
<ol><li>第二个光刻过程<ol>
<li>用丙酮、IPA 冲洗样品，然后吹干氮。</li>
		<li>将样品放在 140 °C 的热板上，进行 10 分钟的除湿。</li>
		<li>旋转AZ2020负光照面以4000 rpm的速度为30s。</li>
		<li>将样品放在热板上，在 115 °C 下软化 60 s。</li>
		<li>以 23.25 mJ.cm-2 紫外线剂量暴露样品 3s。</li>
		<li>将样品放在热板上，在 60 s 的 115 °C 下进行暴露后烘烤。</li>
		<li>在 MIF 726 开发中开发，在环境温度下达到 50 s，然后冲洗 DI 水并吹干氮。预期厚度为 1.7 μm。</li>
	</ol>
</li>
	<li>顶部和底部电极的金属沉积。<ol>
<li>以 4 A/s 和 120 nm 铂金的速率在 2.5 A/s 下沉积 50 nm 铬，电子束蒸发在 10-6 mbar。</li>
	</ol>
</li>
	<li>金属升空<ol>
<li>先将样品留在丙酮中，然后留在 IPA 中，直到金属升空成功。</li>
		<li>用光学显微镜检查样品，如有必要，将样品留在 80 °C 的去除器 PG 中，直到所有金属升空。然后，冲洗 DI 水并吹干氮。</li>
		<li>如果步骤 9.3.2 不够，将样品放入丙酮中的超声波清洁剂中 5 分钟。在必要时重复此操作的次数。</li>
		<li>用丙酮（IPA）冲洗样品，然后用氮气吹干。</li>
	</ol>
</li>
</ol>10. 第 3 步:将样本图案为蚀刻 Si （100） 层
<ol><li>第三个光刻过程<ol>
<li>用丙酮、IPA 冲洗样品，然后吹干氮。</li>
		<li>将样品放在 140 °C 的热板上，进行 10 分钟的除湿。</li>
		<li>旋转AZ2070负光照面以2000 rpm的速度为30s。</li>
		<li>将样品放在60 s的115°C软巴克热板上。</li>
		<li>以 37.5 mJ.cm-2 紫外线剂量暴露样品 5s。</li>
		<li>将样品放在加热板上，在 115 °C 下烘烤 60 s。</li>
		<li>在 MIF 726 中开发，在环境温度下为 110 s，然后冲洗 DI 水，用氮气吹干。预期厚度为 5.9 μm。</li>
		<li>将样品放在 125 °C 的热板上 10 分钟，以硬化电阻。</li>
	</ol>
</li>
	<li>硅层的活性离子蚀刻<ol>
<li>蚀刻硅层，直到 SiO2 层使用 RIE，气体流速为 60 sccm CHF3，20sccm0 2 和 10 sccm Ar 在 100W RF 功率下。</li>
	</ol>
</li>
	<li>清洁电阻残留物<ol>
<li>首先用等离子体清洁，流速为 90 sccm0 2 5 分钟。</li>
		<li>将样品保留在 80 °C 的去除器 PG 中，直到删除所有电阻。然后，冲洗 DI 水并吹干氮。</li>
	</ol>
</li>
</ol>11. 第 4 步:通过 SiO2的湿化学蚀刻释放悬臂
<ol><li>第四个光刻过程<ol>
<li>用丙酮、IPA 冲洗样品，然后吹干氮。</li>
		<li>将样品放在 140 °C 的热板上，进行 10 分钟的除湿。</li>
		<li>旋转AZ2020负光照面以2000 rpm的速度为30s。</li>
		<li>将样品放在加热板上，在115°C下进行60s的软烘烤。</li>
		<li>以 37.5 mJ.cm-2 紫外线剂量暴露样品 5s。</li>
		<li>将样品放在加热板上，在 115 °C 下烘烤 60 s。</li>
		<li>在 MIF 726 中开发，在环境温度下为 65 s。冲洗 DI 水，然后吹干氮。预期厚度为 2.3 μm。</li>
		<li>将样品放在 125 °C 的加热板上 10 分钟，以硬化电阻。</li>
	</ol>
</li>
	<li>带缓冲氧化物蚀刻的 SiO2 层湿蚀刻 （BOE）<ol>
<li>将 BOE 7:1 溶液放入基于聚四氟乙烯 （PTFE） 的容器中。</li>
		<li>将样品放入此溶液中，并将其保持在环境温度，直到所有 SiO2 层都蚀刻在悬臂下。然后冲洗 DI 水并吹干氮。</li>
	</ol>
</li>
	<li>清洁电阻残留物<ol>
<li>用丙酮、IPA 冲洗样品，然后吹干氮。</li>
		<li>如有必要，用等离子体以90 sccm O2 的流速清洁电阻残留物5分钟。</li>
	</ol>
</li>
</ol>

<ol><li>Vila-Fungueiriño, J. M., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Integration+of+functional+complex+oxide+nanomaterials+on+silicon%5BTitle%5D)+AND+%22Frontiers+in+Physics%22%5BJournal%5D)">Integration of functional complex oxide nanomaterials on silicon.</a> Frontiers in Physics. 3, (2015).</li>
<li>Carretero-Genevrier, A., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Direct+monolithic+integration+of+vertical+single+crystalline+octahedral+molecular+sieve+nanowires+on+silicon%5BTitle%5D)+AND+%22Chemistry+of+Materials%22%5BJournal%5D)">Direct monolithic integration of vertical single crystalline octahedral molecular sieve nanowires on silicon.</a> Chemistry of Materials. 26 (2), 1019-1028 (2014).</li>
<li>Gomez, A., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Crystal+engineering+of+room-temperature+ferroelectricity+in+epitaxial+1D+hollandite+oxides+on+silicon%5BTitle%5D)+AND+%22arXiv%3A2007.03452+%5Bcond-mat.mtrl-sci%5D%22%5BJournal%5D)">Crystal engineering of room-temperature ferroelectricity in epitaxial 1D hollandite oxides on silicon.</a> arXiv:2007.03452 [cond-mat.mtrl-sci]. , (2020).</li>
<li>Tadigadapa, S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Piezoelectric+MEMS+sensors%3A+state-of-the-art+and+perspectives%5BTitle%5D)+AND+%22Measurement+Science+and+Technology%22%5BJournal%5D)">Piezoelectric MEMS sensors: state-of-the-art and perspectives.</a> Measurement Science and Technology. 20 (9), 092001(2009).</li>
<li>Yin, S. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Integration+of+epitaxial+piezoelectric+thin+films+on+silicon%5BTitle%5D)+AND+%22Ecole+Centrale+de+Lyon%2C+France%22%5BJournal%5D)">Integration of epitaxial piezoelectric thin films on silicon.</a> Ecole Centrale de Lyon, France. , (2013).</li>
<li>Isarakorn, D., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Epitaxial+piezoelectric+MEMS+on+silicon%5BTitle%5D)+AND+%22Journal+of+Micromechanics+and+Microengineering%22%5BJournal%5D)">Epitaxial piezoelectric MEMS on silicon.</a> Journal of Micromechanics and Microengineering. 20 (5), 055008(2010).</li>
<li>Craighead, H. G. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Nanoelectromechanical+systems%5BTitle%5D)+AND+%22Science%22%5BJournal%5D)">Nanoelectromechanical systems.</a> Science. 290 (5496), 1532-1535 (2000).</li>
<li>Warusawithana, M. P., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((A+ferroelectric+oxide+made+directly+on+silicon%5BTitle%5D)+AND+%22Science%22%5BJournal%5D)">A ferroelectric oxide made directly on silicon.</a> Science. 324 (5925), 367-370 (2009).</li>
<li>Galliou, S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Quality+factor+measurements+of+various+types+of+quartz+crystal+resonators+operating+near+4+K%5BTitle%5D)+AND+%22IEEE+Transactions+on+Ultrasonic%2C+Ferroelectrics%2C+and+Frequency+Control%22%5BJournal%5D)">Quality factor measurements of various types of quartz crystal resonators operating near 4 K.</a> IEEE Transactions on Ultrasonic, Ferroelectrics, and Frequency Control. 63 (7), (2015).</li>
<li>Danel, J. S., Delapierre, G. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Quartz%3A+a+material+for+microdevices%5BTitle%5D)+AND+%22Journal+of+Micromechanics+and+Microengineering%22%5BJournal%5D)">Quartz: a material for microdevices.</a> Journal of Micromechanics and Microengineering. 1 (4), 187(1991).</li>
<li>Sohn, Y. I., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Mechanical+and+optical+nanodevices+in+single-crystal+quartz%5BTitle%5D)+AND+%22Applied+Physics+Letters%22%5BJournal%5D)">Mechanical and optical nanodevices in single-crystal quartz.</a> Applied Physics Letters. 111 (26), 263103(2017).</li>
<li>Santybayeva, Z., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Fabrication+of+quartz+microcylinders+by+laser+interference+lithography+for+angular+optical+tweezers%5BTitle%5D)+AND+%22Journal+of+Micro%2FNanolithography%2C+MEMS%2C+and+MOEMS%22%5BJournal%5D)">Fabrication of quartz microcylinders by laser interference lithography for angular optical tweezers.</a> Journal of Micro/Nanolithography, MEMS, and MOEMS. 15, 3(2016).</li>
<li>Lu, H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Enhanced+electro-optical+lithium+niobate+photonic+crystal+wire+waveguide+on+a+smart-cut+thin+film%5BTitle%5D)+AND+%22Optics+Express%22%5BJournal%5D)">Enhanced electro-optical lithium niobate photonic crystal wire waveguide on a smart-cut thin film.</a> Optics Express. 20 (3), 2974-2981 (2012).</li>
<li>Carretero-Genevrier, A., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Soft-chemistry-based+routes+to+epitaxial+alpha-quartz+thin+films+with+tunable+textures%5BTitle%5D)+AND+%22Science%22%5BJournal%5D)">Soft-chemistry-based routes to epitaxial alpha-quartz thin films with tunable textures.</a> Science. 340 (6134), 827-831 (2013).</li>
<li>Carretero-Genevrier, A., Gich, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Preparation+of+macroporous+epitaxial+quartz+films+on+silicon+by+chemical+solution+deposition%5BTitle%5D)+AND+%22Journal+of+Visualized+Experiments%3A+JoVE%22%5BJournal%5D)">Preparation of macroporous epitaxial quartz films on silicon by chemical solution deposition.</a> Journal of Visualized Experiments: JoVE. (106), e53543(2015).</li>
<li>Zhang, Q., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Tailoring+the+crystal+growth+of+quartz+on+silicon+for+patterning+epitaxial+piezoelectric+films%5BTitle%5D)+AND+%22Nanoscale+Advances%22%5BJournal%5D)">Tailoring the crystal growth of quartz on silicon for patterning epitaxial piezoelectric films.</a> Nanoscale Advances. 1 (9), 3741-3752 (2019).</li>
<li>Zhang, Q., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Micro%2Fnanostructure+engineering+of+epitaxial+piezoelectric+%CE%B1-quartz+thin+films+on+silicon%5BTitle%5D)+AND+%22ACS+Applied+Materials+%26+Interfaces%22%5BJournal%5D)">Micro/nanostructure engineering of epitaxial piezoelectric α-quartz thin films on silicon.</a> ACS Applied Materials & Interfaces. 12 (4), 4732-4740 (2020).</li>
<li>Sansen, T., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Mapping+cell+membrane+organization+and+dynamics+using+soft+nanoimprint+lithography%5BTitle%5D)+AND+%22ACS+Applied+Materials+%26+Interfaces%22%5BJournal%5D)">Mapping cell membrane organization and dynamics using soft nanoimprint lithography.</a> ACS Applied Materials & Interfaces. 12 (26), 29000-29012 (2020).</li>
<li>Jolly, C., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Soft+chemistry+assisted+on-chip+integration+of+nanostructured+quartz-based+piezoelectric+microelectromechanical+system%5BTitle%5D)+AND+%22arXiv%3A2007.07566+%5Bphysics.app-ph%5D%22%5BJournal%5D)">Soft chemistry assisted on-chip integration of nanostructured quartz-based piezoelectric microelectromechanical system.</a> arXiv:2007.07566 [physics.app-ph]. , (2020).</li>
</ol>

作者没有什么可透露的。

该方法采用自下而上的方法，在 Si. 石英/Si-MEMS 技术上生产纳米结构压电石英微悬臂，在尺寸、功耗和集成成本方面比散装石英具有重大优势。事实上，表观石英/Si MEMS 是与 CMOS 兼容的工艺生产的。这可促进未来为多频设备制造单芯片解决方案，同时保持小型化和具有成本效益的流程。与目前制造的石英器件相比，该技术基于大型水热晶体的切割和抛光，协议中描述的方法允许在SOSI基板上获得相?...

具有压电特性的氧化物纳米材料对于设计MEMS传感器、微型能量收割机或储存1、2、3等设备至关重要。随着CMOS技术的进步，优质表观压电薄膜和纳米结构整体集成硅成为新设备扩展的一个值得关注的主题。此外，需要更好地控制这些设备的小型化，以实现高性能5，6。电子、生物和医学领域的新传感器应用是由微和纳米制剂技术的进步所推动的。
特别是，α石英被广泛用作压电材料，并显示出突出的特性，使用户能够为不同的应用制造。虽然机电耦合系数低，限制了其能量收集的应用领域，但其化学稳定性和高机械质量系数使其成为频率控制装置和传感器技术的良好应用。然而，这些设备是从散装单石英晶体微加工而来的，具有制造设备10的理想特性。石英晶体的厚度应该以这样的方式配置，以便从设备获得最高的共振频率，现在，最低可实现的厚度是10μm11。到目前为止，一些微量晶体的技术，如法拉第笼斜蚀11，激光干扰光刻12，和聚焦离子束（FIB）13报道。
最近，化学溶液沉积（CSD）14、15开发出将（100）α石英薄膜直接和自下而上地整合成硅基板（100）。这种方法为克服上述挑战打开了大门，也为未来的传感器应用开发基于压电的设备打开了大门。实现了硅基板上α石英薄膜的结构，控制了薄膜的质地、密度和厚度。α石英薄膜的厚度从几百纳米扩大到微米范围，比散装晶体自上而下技术获得的薄10至50倍。优化浸涂沉积条件，湿度和温度，通过一套自上而下的石刻技术17的组合，实现了连续的纳米结构晶体石英薄膜和完美的纳米印花模式。具体来说，软纳米印花光刻（NIL）是一种低成本、大规模制造和台面设备为基础的工艺。软NIL的应用结合了自上而下的方法，是生产硅上表观石英纳米柱阵列的关键，能够精确控制柱径、高度和柱间距离。此外，在有机硅玻璃上制造具有可控形状、直径和周期性的硅纳米柱，用于生物应用，并定制了表观石英薄膜18的软NIL。
到目前为止，压电纳米结构α石英MEMS的片上集成是不可能的。在这里，我们绘制了从材料到设备制造的详细工程路线。我们解释了材料合成的所有步骤，软NIL和设备的微压压，以释放在SOI基板19 上的压电石英悬臂，并讨论其作为压电材料的反应与一些描述结果。

<table><tbody><tr><td>Acetone</td><td>Honeywell Riedel de Ha&amp;euml;n</td><td>UN 1090</td><td></td></tr><tr><td>AZnLOF 2020 negative resist</td><td>Microchemicals</td><td>USAW176488-1BLO</td><td></td></tr><tr><td>AZnLOF 2070 negative resist</td><td>Microchemicals</td><td>USAW211327-1FK6</td><td></td></tr><tr><td>AZ 726 MIF developer</td><td>Merck</td><td>DEAA195539</td><td></td></tr><tr><td>BOE (7:1)</td><td>Technic</td><td>AF 87.5-12.5</td><td></td></tr><tr><td>Brij-58</td><td>Sigma</td><td>9004-95-9</td><td></td></tr><tr><td>Chromium</td><td>Neyco</td><td>FCRID1T00004N-F53-062317/FC79271</td><td></td></tr><tr><td>Dip Coater ND-R 11/2 F</td><td>Nadetec</td><td>ND-R 11/2 F</td><td></td></tr><tr><td>Hydrogen peroxide solution 30%</td><td>Carlo Erka Reagents DasitGroup</td><td>UN 2014</td><td></td></tr><tr><td>H&lt;sub&gt;2&lt;/sub&gt;SO&lt;sub&gt;4&lt;/sub&gt;</td><td>Honeywell Fluka</td><td>UN 1830</td><td></td></tr><tr><td>Isopropyl alcohol</td><td>Honeywell Riedel de Ha&amp;euml;n</td><td>UN 1219</td><td></td></tr><tr><td>Mask aligner</td><td>EV Group</td><td>EVG620</td><td></td></tr><tr><td>PG remover</td><td>MicroChem</td><td>18111026</td><td></td></tr><tr><td>Platinum</td><td>Neyco</td><td>INO272308/F14508</td><td></td></tr><tr><td>PTFE based container</td><td>Teflon</td><td></td><td></td></tr><tr><td>Reactive ion etching (RIE)</td><td>Corial</td><td>ICP Corial 200 IL</td><td></td></tr><tr><td>SEMFEG</td><td>Hitachi</td><td>Su-70</td><td></td></tr><tr><td>SOI substrate</td><td>University Wafer</td><td>ID :3213</td><td></td></tr><tr><td>Strontium chloride hexahydrate</td><td>Sigma-Aldrich</td><td>10025-70-4</td><td></td></tr><tr><td>SYLGARD TM 184 Silicone Elastomer Kit</td><td>Dow</td><td>.000000840559</td><td></td></tr><tr><td>SYLGARD TM 184 Silicone Elastomer Curring Agent</td><td>Dow</td><td>.000000840559</td><td></td></tr><tr><td>Tetraethyl orthosilicate</td><td>Aldrich</td><td>78-10-4</td><td></td></tr><tr><td>Tubular Furnace</td><td>Carbolite</td><td>PTF 14/75/450</td><td></td></tr><tr><td>Vibrometer</td><td>Polytec</td><td>OFV-500D</td><td></td></tr><tr><td>2D XRD</td><td>Bruker</td><td>D8 Discover</td><td>Equipped with a Eiger2 R 500 K 2D detector</td></tr></tbody></table>

epitaxial nanostructured &alpha;-quartz films on silicon: from the material to new devices

在这项工作中，我们展示了第一台压电纳米结构表观石英微扫描器的详细工程路线。我们将解释从材料到设备制造过程中的所有步骤。SOI （100） 基板上α石英薄膜的表观增生始于制备掺杂硅溶胶，并利用室温下大气条件下的浸涂技术，以薄膜形式将这种凝胶沉积到 SOI 基板中。在凝胶薄膜结晶之前，纳米结构通过纳米印刷石刻（NIL）在薄膜表面进行。表皮膜生长达到1000°C，诱导图案凝胶薄膜的完美结晶。石英晶体悬臂装置的制造是一个基于微制造技术的四步过程。这个过程从塑造石英表面开始，然后电极的金属沉积跟随它。去除硅胶后，悬臂从 SOI 基板中释放出来，消除硅和石英之间的 SiO2。 通过非接触式激光振动计 （LDV） 和原子力显微镜 （AFM） 分析设备性能。在制造芯片中包含的不同悬臂尺寸中， 本作品中分析的纳米结构悬臂尺寸为 40μm 大，长 100μm，由 600 nm 厚的图案石英层（纳米柱直径和分离距离分别为 400 nm 和 1 μm）制成，在 2 μm 厚的 Si 设备层上呈表观增长。测得的共振频率为267千赫，整个机械结构的估计质量因子Q在低真空条件下为Q~398。我们用两种技术（即AFM接触测量和LDV）观察了悬臂的电压依赖线性位移。因此，证明这些设备可以通过间接压电效应激活。

材料合成和设备制造的进展（见图1）通过用真实图像监测不同的步骤来描述。在微制造过程之后，我们使用现场发射扫描电子显微镜 （FEG-SEM） 图像（图 2a-c）观察了纳米结构悬臂的各个方面。2D微X射线衍射控制了悬臂不同堆叠层的晶体（图2d）。我们还利用电子衍射技术和后散电子模式（图2<s...

Watch this Scientific Journal Video about Epitaxial Nanostructured Î±-Quartz Films on Silicon: From the Material to New Devices at JoVE.com

Epitaxial Nanostructured &#945;-Quartz Films on Silicon: From the Material to New Devices

本工作为纳米结构α石英悬臂在绝缘硅（SOI）技术基板上的微压造提供了详细的协议，从石英薄膜的表观生长开始，采用浸涂法，然后通过纳米印花石刻技术对薄膜进行纳米结构处理。

硅上显性纳米结构α石英薄膜:从材料到新设备

In this work, we show a detailed engineering route of the first piezoelectric nanostructured epitaxial quartz-based microcantilever. We will explain all ...

epitaxial-nanostructured-quartz-films-on-silicon-from-material-to-new

Research

JoVE Journal

Engineering

Epitaxial Nanostructured &alpha;-Quartz Films on Silicon: From the Material to New Devices

5.4K 次观看.  Université de Montpellier. 本工作为纳米结构α石英悬臂在绝缘硅（SOI）技术基板上的微压造提供了详细的协议，从石英薄膜的表观生长开始，采用浸涂法，然后通过纳米印花石刻技术对薄膜进行纳米结构处理。

视频: Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids

Conjoining different semiconductor materials in a single nano-composite provides synthetic means for the development of novel optoelectronic materials offering a superior control over the spatial distribution of charge carriers across material interfaces. As this study demonstrates, a combination of donor-acceptor nanocrystal (NC) domains in a single nanoparticle can lead to the realization of efficient photocatalytic1-5 materials, while a layered assembly of donor- and acceptor-like nanocrystals films gives rise to photovoltaic materials.
Initially the paper focuses on the synthesis of composite inorganic nanocrystals, comprising linearly stacked ZnSe, CdS, and Pt domains, which jointly promote photoinduced charge separation. These structures are used in aqueous solutions for the photocatalysis of water under solar radiation, resulting in the production of H2 gas. To enhance the photoinduced separation of charges, a nanorod morphology with a linear gradient originating from an intrinsic electric field is used5. The inter-domain energetics are then optimized to drive photogenerated electrons toward the Pt catalytic site while expelling the holes to the surface of ZnSe domains for sacrificial regeneration (via methanol). Here we show that the only efficient way to produce hydrogen is to use electron-donating ligands to passivate the surface states by tuning the energy level alignment at the semiconductor-ligand interface. Stable and efficient reduction of water is allowed by these ligands due to the fact that they fill vacancies in the valence band of the semiconductor domain, preventing energetic holes from degrading it. Specifically, we show that the energy of the hole is transferred to the ligand moiety, leaving the semiconductor domain functional. This enables us to return the entire nanocrystal-ligand system to a functional state, when the ligands are degraded, by simply adding fresh ligands to the system4.
To promote a photovoltaic charge separation, we use a composite two-layer solid of PbS and TiO2 films. In this configuration, photoinduced electrons are injected into TiO2 and are subsequently picked up by an FTO electrode, while holes are channeled to a Au electrode via PbS layer6. To develop the latter we introduce a Semiconductor Matrix Encapsulated Nanocrystal Arrays (SMENA) strategy, which allows bonding PbS NCs into the surrounding matrix of CdS semiconductor. As a result, fabricated solids exhibit excellent thermal stability, attributed to the heteroepitaxial structure of nanocrystal-matrix interfaces, and show compelling light-harvesting performance in prototype solar cells7.

A general strategy for the development of charge-separating semiconductor nanocrystal composites deployable for solar energy production is presented. We show that assembly of donor-acceptor nanocrystal domains in a single nanoparticle geometry gives rise to a photocatalytic function, while bulk-heterojunctions of donor-acceptor nanocrystal films can be used for photovoltaic energy conversion.

通过电荷分离纳米晶及其固体收获太阳能

Conjoining different semiconductor materials in a single nano-composite provides synthetic means for the development of novel optoelectronic materials ...

科研

工程学

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

Atomically defined substrate surfaces are prerequisite for the epitaxial growth of complex oxide thin films. In this protocol, two approaches to obtain such surfaces are described. The first approach is the preparation of single terminated perovskite SrTiO3 (001) and DyScO3 (110) substrates. Wet etching was used to selectively remove one of the two possible surface terminations, while an annealing step was used to increase the smoothness of the surface. The resulting single terminated surfaces allow for the heteroepitaxial growth of perovskite oxide thin films with high crystalline quality and well-defined interfaces between substrate and film. In the second approach, seed layers for epitaxial film growth on arbitrary substrates were created by Langmuir-Blodgett (LB) deposition of nanosheets. As model system Ca2Nb3O10- nanosheets were used, prepared by delamination of their layered parent compound HCa2Nb3O10. A key advantage of creating seed layers with nanosheets is that relatively expensive and size-limited single crystalline substrates can be replaced by virtually any substrate material.

Various procedures are outlined to prepare atomically defined templates for epitaxial growth of complex oxide thin films. Chemical treatments of single crystalline SrTiO3 (001) and DyScO3 (110) substrates were performed to obtain atomically smooth, single terminated surfaces. Ca2 Nb3 O10- nanosheets were used to create atomically defined templates on arbitrary substrates.

原子定义模板复合氧化物薄膜的外延生长

Atomically defined substrate surfaces are prerequisite for the epitaxial growth of complex oxide thin films. In this protocol, two approaches to obtain ...

化学

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H2O2/H2O solution did not show measurable change in their initial contact angle (CA) ~75&#176;. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H2O2/H2O solution at 250 and 65 mJ/cm2, respectively, has decreased the CA to near 15&#176;, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer&#8217;s surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of&#160;the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH3OH) using ArF laser operating at pulse fluence of 65 mJ/cm2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103&#176;. The XPS results indicate ArF laser induced formation of Si&#8211;(OCH3)x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH3 radicals.

We report on a process of in situ alteration of HF treated Si (001) surface into a hydrophilic or hydrophobic state by irradiating samples in microfluidic chambers filled with&#160;H2O2/H2O solution (0.01%-0.5%) or methanol solutions using pulsed UV laser of a relative low pulse fluence.

硅表面润湿性的选择区域改性脉冲紫外激光照射在液体环境

The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of ...

Fabrication and Operation of a Nano-Optical Conveyor Belt

The technique of using focused laser beams to trap and exert forces on small particles has enabled many pivotal discoveries in the nanoscale biological and physical sciences over the past few decades. The progress made in this field invites further study of even smaller systems and at a larger scale, with tools that could be distributed more easily and made more widely available. Unfortunately, the fundamental laws of diffraction limit the minimum size of the focal spot of a laser beam, which makes particles smaller than a half-wavelength in diameter hard to trap and generally prevents an operator from discriminating between particles which are closer together than one half-wavelength. This precludes the optical manipulation of many closely-spaced nanoparticles and&#160;limits the&#160;resolution of optical-mechanical systems. Furthermore, manipulation using focused beams requires beam-forming or steering optics, which can be very bulky and expensive. To address these limitations in the system scalability of conventional optical trapping our lab has devised an alternative technique which utilizes near-field optics to move particles across a chip. Instead of focusing laser beams in the far-field, the optical near field of plasmonic resonators produces the necessary local optical intensity enhancement to overcome the restrictions of diffraction and manipulate particles at higher resolution. Closely-spaced resonators produce strong optical traps which can be addressed to mediate the hand-off of particles from one to the next in a conveyor-belt-like fashion. Here, we describe how to design and produce a conveyor belt using a gold surface patterned with plasmonic C-shaped resonators and how to operate it with polarized laser light to achieve super-resolution nanoparticle manipulation and transport. The nano-optical conveyor belt chip can be produced using lithography techniques and easily packaged and distributed.

The scalability and resolution of conventional optical manipulation techniques are limited by diffraction. We circumvent the diffraction limit and describe a method of optically transporting nanoparticles across a chip using a gold surface patterned with a path of closely spaced C-shaped plasmonic resonators.

一个纳米光输送带的制作和操作

The technique of using focused laser beams to trap and exert forces on small particles has enabled many pivotal discoveries in the nanoscale biological ...

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by quantum mechanical effects such as tunneling through single dopants, scattering via interface defects, and discrete trap charge states. However, progress in silicon technology has shown that these phenomena can be harnessed and exploited for a new class of quantum-based electronics. Among others, multi-layer-gated silicon metal-oxide-semiconductor (MOS) technology can be used to control single charge or spin confined in electrostatically-defined quantum dots (QD). These QD-based devices are an excellent platform for quantum computing applications and, recently, it has been demonstrated that they can also be used as single-electron pumps, which are accurate sources of quantized current for metrological purposes. Here, we discuss in detail the fabrication protocol for silicon MOS QDs which is relevant to both quantum computing and quantum metrology applications. Moreover, we describe characterization methods to test the integrity of the devices after fabrication. Finally, we give a brief description of the measurement set-up used for charge pumping experiments and show representative results of electric current quantization.

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

硅金属 - 氧化物 - 半导体量子点单电子泵

As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by ...

Atomically Traceable Nanostructure Fabrication

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the entire fabrication process being used in order to maintain exquisite control over both feature size and feature density. Here, we demonstrate a method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology, opening up a pathway for top-down atomic control over nanofabrication. Hydrogen depassivation lithography is the first step of the nanoscale fabrication process followed by selective atomic layer deposition of up to 2.8 nm of titania to make a nanoscale etch mask. Contrast with the background is shown, indicating different mechanisms for growth on the desired patterns and on the H passivated background. The patterns are then transferred into the bulk using reactive ion etching to form 20 nm tall nanostructures with linewidths down to ~6 nm. To illustrate the limitations of this process, arrays of holes and lines are fabricated. The various nanofabrication process steps are performed at disparate locations, so process integration is discussed. Related issues are discussed including using fiducial marks for finding nanostructures on a macroscopic sample and protecting the chemically reactive patterned Si(100)-H surface against degradation due to atmospheric exposure.

We report a protocol for combining the atomic metrology of the Scanning Tunneling Microscope for surface patterning with selective Atomic Layer Deposition and Reactive Ion Etching. Using a robust process involving numerous atmospheric exposures and transport, 3D nanostructures with atomic metrology are fabricated.

原子纳米结构可追溯制造

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the entire fabrication process ...

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

This work describes the detailed protocol for preparing piezoelectric macroporous epitaxial quartz films on silicon(100) substrates. This is a three-step process based on the preparation of a sol in a one-pot synthesis which is followed by the deposition of a gel film on Si(100) substrates by evaporation induced self-assembly using the dip-coating technique and ends with a thermal treatment of the material to induce the gel crystallization and the growth of the quartz film. The formation of a silica gel is based on the reaction of a tetraethyl orthosilicate and water, catalyzed by HCl, in ethanol. However, the solution contains two additional components that are essential for preparing mesoporous epitaxial quartz films from these silica gels dip-coated on Si. Alkaline earth ions, like Sr2+ act as glass melting agents that facilitate the crystallization of silica and in combination with cetyl trimethylammonium bromide (CTAB) amphiphilic template form a phase separation responsible of the macroporosity of the films. The good matching between the quartz and silicon cell parameters is also essential in the stabilization of quartz over other SiO2 polymorphs and is at the origin of the epitaxial growth.

A protocol is presented for the preparation of piezoelectric macroporous epitaxial films of quartz on silicon by solution chemistry using dip-coating and thermal treatments in air.

化学溶液沉积在硅外延大孔石英薄膜的制备

This work describes the detailed protocol for preparing piezoelectric macroporous epitaxial quartz films on silicon(100) substrates. This is a three-step ...

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and conformality by taking advantage of self-limiting reactions between vapor-phase precursors and the growing film. Perovskite oxides present potential for next-generation electronic materials, but to-date have mostly been deposited by physical methods. This work outlines a method for depositing SrTiO3 (STO) on germanium using ALD. Germanium has higher carrier mobilities than silicon and therefore offers an alternative semiconductor material with faster device operation. This method takes advantage of the instability of germanium's native oxide by using thermal deoxidation to clean and reconstruct the Ge (001) surface to the 2&#215;1 structure. 2-nm thick, amorphous STO is then deposited by ALD. The STO film is annealed under ultra-high vacuum and crystallizes on the reconstructed Ge surface. Reflection high-energy electron diffraction (RHEED) is used during this annealing step to monitor the STO crystallization. The thin, crystalline layer of STO acts as a template for subsequent growth of STO that is crystalline as-grown, as confirmed by RHEED. In situ X-ray photoelectron spectroscopy is used to verify film stoichiometry before and after the annealing step, as well as after subsequent STO growth. This procedure provides framework for additional perovskite oxides to be deposited on semiconductors via chemical methods in addition to the integration of more sophisticated heterostructures already achievable by physical methods.

This work details the procedures for the growth and characterization of crystalline SrTiO3 directly on germanium substrates by atomic layer deposition. The procedure illustrates the ability of an all-chemical growth method to integrate oxides monolithically onto semiconductors for metal-oxide semiconductor devices.

锗通过原子层沉积钙钛矿型钛酸锶的外延生长

Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and ...

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and forging. Adoption of this technique is proceeding despite disagreement concerning the underlying mechanism responsible for EAD. The experimental procedure described herein enables a more explicit study compared to previous EAD research by removing thermal effects, which are responsible for disagreement in interpreting previous EAD results. Furthermore, as the procedure described here enables EAD observation in situ and in real time in a transmission electron microscope (TEM), it is superior to existing post-mortem methods that observe EAD effects post-test. Test samples consist of a single crystal copper (SCC) foil having a free-standing tensile test section of nanoscale thickness, fabricated using a combination of laser and ion beam milling. The SCC is mounted to an etched silicon base that provides mechanical support and electrical isolation while serving as a heat sink. Using this geometry, even at high current density (~3,500 A/mm2), the test section experiences a negligible temperature increase (&#60;0.02 &#176;C), thus eliminating Joule heating effects. Monitoring material deformation and identifying the corresponding changes to microstructures, e.g. dislocations, are accomplished by acquiring and analyzing a series of TEM images. Our sample preparation and in situ experiment procedures are robust and versatile as they can be readily utilized to test materials with different microstructures, e.g., single and polycrystalline copper.

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Isolating electrical and thermal effects on electrically assisted deformation (EAD) is very difficult using macroscopic samples. Metallic sample micro- and nanostructures together with a custom test procedure have been developed to evaluate the impact of applied current on the formation without joule heating and evolution of dislocations on these samples.

一种新的方法<em&gt;原位</em&gt;纳米级样品的机电表征

Electrically assisted deformation (EAD) is increasingly being used to improve the formability of metals during processes such as sheet metal rolling and ...

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

This protocol demonstrates a method for graphene-assisted quick growth and coalescence of AlN on nano-pattened sapphire substrate (NPSS). Graphene layers are directly grown on NPSS using catalyst-free atmospheric-pressure chemical vapor deposition (APCVD). By applying nitrogen reactive ion etching (RIE) plasma treatment, defects are introduced into the graphene film to enhance chemical reactivity. During metal-organic chemical vapor deposition (MOCVD) growth of AlN, this N-plasma treated graphene buffer enables AlN quick growth, and coalescence on NPSS is confirmed by cross-sectional scanning electron microscopy (SEM). The high quality of AlN on graphene-NPSS is then evaluated by X-ray rocking curves (XRCs) with narrow (0002) and (10-12) full width at half-maximum (FWHM) as 267.2 arcsec and 503.4 arcsec, respectively. Compared to bare NPSS, AlN growth on graphene-NPSS shows significant reduction of residual stress from 0.87 GPa to 0.25 Gpa, based on Raman measurements. Followed by AlGaN multiple quantum wells (MQWS) growth on graphene-NPSS, AlGaN-based deep ultraviolet light-emitting-diodes (DUV LEDs) are fabricated. The fabricated DUV-LEDs also demonstrate obvious, enhanced luminescence performance. This work provides a new solution for the growth of high quality AlN and fabrication of high performance DUV-LEDs using a shorter process and less costs.

A protocol for graphene-assisted growth of high-quality AlN films on nano-patterned sapphire substrate is presented.

紫外发光二极管纳米图案蓝宝石基板的AlN薄膜的石墨烯辅助准范德瓦尔斯皮Taxy

This protocol demonstrates a method for graphene-assisted quick growth and coalescence of AlN on nano-pattened sapphire substrate (NPSS). Graphene layers ...