The authors would like to thank the Ministry of Science and Technology of Taiwan, for their financial support of this research under Contract Nos. MOST-102-2923-E-492- 001-MY3 (W. J. Lee) and NSC-102- 2112-M-005-003-MY3 (M. S. Ho). Support from the High-performance Computing of Taiwan in providing huge computing resources to facilitate this research is also gratefully acknowledged.

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저자는 공개 아무것도 없어.

<html> 본 연구에서는 (도 1) 신규 어닐링 공정을 통해 실리콘 기판 상에 C (84)의 자기 조립 단분자막의 제조를 보여준다. 이 프로세스는 나노 매립 반도체 기판의 다른 종류를 제조 할 수있다. 은 C (84)는 Si 기판은 UHV-STM (도 2), 전계 방출 분광기, 광 발광 스펙트럼, MFM 및 SQUID (도 3)을 이용하여 원자 수준에서 분석되었다 - 임베디드. 은 C (84)의 나노 기계 특성 (즉, 스트레스)에 상응하는 접착 강도는 실리콘 기판을 AFM (도 4)를 사용하여 측정 할 수있다 - 임베디드. 우리의 결과는 제안 된 C (84)의 경도는 Si 기판 도구뿐만 아니라, MEMS 디바이스에서 필름을 절단하는 연마재대로 적용 제작의 SiC 및 Si 표면의 것과 비교할 - 임베디드 것을 보여준다. jove_content &quot;&gt; 시뮬레이션 섹션의 폰 미제스 응력 (ε VM) 분석 실험에서 관찰하는 것은 매우 어렵다 원자 구조의 국부 변형을 검출 할 수있다. 그러나, 상 변화를 특성화 할 수 없다. 여기서, 우리는 배위 수와 위상 변화를 조사 HA 인덱스 (23)로서 유용한 지표를 제시한다. 압입 모델의 설정에서는,이 평면 방향으로 기판의 크기는 적어도 세 배 더 커야 지적해야 사이즈 효과 역학 및 원자 힘의 흐름에 영향을주는 경계 조건의 제한을 제거하기위한 탐침의 직경보다. 또한, MD 시뮬레이션 시간 제한에 압입 공정을 연구하기 때문에, 프로브 실험에 비해 매우 빠른 속도로 시험편을 발휘한다. 우리는 로딩 속도에서 오랜 시간을 와서 너무 높은 점에 유의그 결과는 자연 (25)과 거의 준 정적 인식 할 수 있기 때문에, 오믹 확산 및 이동 동작하지만 관찰 기계적 하중 (24) 하에서 소성 변형 거동 및 재료 특성을 기술하는 것이 여전히 바람직하다. 대안 이론라는 병렬 복제본 역학 (PRD) (26)는 실질적으로 시뮬레이션 시간을 단축하기 위해 개발되었지만, 무거운 컴퓨팅 자원을 필요로한다. 은 MD 시뮬레이션 연구에서 얻은 데이터는 AFM 들여 쓰기 실험 (그림 8)과 일치한다; 또한, C (84)의 경도 감소 계수는 Si 기판이 다른 실리콘 기판에 필적 - 임베디드. 이러한 데이터는 C (84) 광전자에 상당한 영향을 미칠 및 자기 반도체 (DMS) 나노 희석 수의 Si 기판 - 임베디드 것이 좋습니다.

풀러렌 분자와 그들의 우수한 구조적 특성, 전기 전도성, 기계적 강도, 화학적 특성 1-4 그들은 나노 물질 중 독특한입니다 구성하는 복합 재료. 이들 재료는 전자, 컴퓨터, 연료 전지 기술은 태양 전지, 및 전계 방출 기술 5,6- 같은 분야의 범위에서 매우 유익 입증되었다. 이들 재료 중에서, 실리콘 카바이드 (SiC) 나노 입자 복합체는 넓은 밴드 갭, 높은 열 전도성과 안정성, 높은 전기 브레이크 능력, 및 화학적 불활성 특히주의 덕분 받았다. 이러한 이점은 광전자 장치에 특히 명백하며, 금속 - 산화물 - 반도체 전계 효과 트랜지스터 (MOSFET), 발광 다이오드 (LED)와 고출력, 고주파, 고온 응용. 그러나, 고밀도 결함은 일반적 conventi 표면 관찰도 그러 탄화 규소 심지어 장치 고장 7,8 선도 전자 구조에 악영향을 가질 수있다. SiC로 애플리케이션이 1960 년부터 연구되어 있다는 사실에도 불구하고, 이러한 특정 미해결 문제가 남아있다. 이 연구의 목적은 C (84)의 제조가 생성 된 물질의 전자 광전자, 기계, 자기, 현장 방출 특성의 포괄적 인 이해를 얻기 위해 Si 기판의 이종 접합 및 후속 분석 - 임베디드이었다. 또한, 분자 역학 계산의 새로운 애플리케이션을 통해, 나노 물질의 특성을 예측하는 수치 시뮬레이션을 이용하여 문제를 해결.

<table border="0" cellpadding="0" cellspacing="0" width="972">
	<tbody>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Silicon wafer</td>
			<td style="width:203px;"></td>
			<td style="width:119px;"></td>
			<td style="width:435px;">Si(111) Type/Dopant: P/Boron&#160; Resistivity: 0.05-0.1 Ohm.cm</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Carbon,C84</td>
			<td style="width:203px;">Legend Star</td>
			<td style="width:119px;"></td>
			<td>C84 powder, 98%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Hydrochloric acid</td>
			<td style="width:203px;">Sigma-Aldrich</td>
			<td style="width:119px;">84422</td>
			<td>RCA,37%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Ammonium</td>
			<td style="width:203px;">Choneye Pure Chemical</td>
			<td style="width:119px;"></td>
			<td>RCA,25%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Hydrogen peroxide</td>
			<td style="width:203px;">Choneye Pure Chemical</td>
			<td style="width:119px;"></td>
			<td>RCA,35%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Nitrogen&#160;</td>
			<td style="width:203px;">Ni Ni Air</td>
			<td style="width:119px;"></td>
			<td>high-pressure bottle,95%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Tungsten</td>
			<td style="width:203px;">Nilaco</td>
			<td style="width:119px;">461327</td>
			<td>wire, diameter 0.3 mm, tip</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Sodium hydroxide</td>
			<td style="width:203px;">UCW</td>
			<td style="width:119px;">85765</td>
			<td>etching Tungsten wire for tip,</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Acetone</td>
			<td style="width:203px;">Marcon Fine Chemicals</td>
			<td style="width:119px;">99920</td>
			<td>suitable for liquid chromatography and UV-spectrophotometry</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Methanol</td>
			<td style="width:203px;">Marcon Fine Chemicals</td>
			<td style="width:119px;">64837</td>
			<td>suitable for liquid chromatography and UV-spectrophotometry</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">UHV-SPM</td>
			<td style="width:203px;">JEOL Ltd</td>
			<td style="width:119px;">JSPM-4500A</td>
			<td>Ultrahigh Vacuum Scanning Tunneling Microscope and Ultrahigh Vacuum Atomic Force Microscope</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Power supply</td>
			<td style="width:203px;">&#160;Keithley&#160;</td>
			<td style="width:119px;">237</td>
			<td>High-Voltage Source-Measure Unit</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">SQUID</td>
			<td style="width:203px;">Quantum desigh</td>
			<td style="width:119px;">MPMS-7</td>
			<td>Magnetic field strength: &#177; 7.0 Tesla, Temperature range: 2 ~ 400 K, Magnetic-dipole range:5 &#215; 10^-7 ~ 300 emu</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">ALPS</td>
			<td style="width:203px;">National Center for High-performance Computing, Taiwan</td>
			<td style="width:119px;"></td>
			<td>Advanced Large-scale Parallel Supercluster, 177Tflops; 25,600 CPU cores; 73,728 GB RAM; 1074 TB storage</td>
		</tr>
	</tbody>
</table>

probing c84-embedded si substrate using scanning probe microscopy and molecular dynamics

이 논문은 어레이 디자인 C (84)의 Si 기판 - 임베디드은 초고 진공 챔버 내에 제어 된 자기 조립 방법을 이용하여 제조보고한다. 은 C (84)의 특징은, 이러한 원자 해상도 지형 상태 로컬 전자 밀도, 밴드 갭 에너지, 전계 방출 특성, 나노 기계 강성, 표면 자력으로, 실리콘 표면 - 임베디드 울트라 하에서 표면 분석하는 다양한 기술을 이용하여 조사 하였다 높은 진공 (UHV) 조건뿐만 아니라에서 대기 시스템. 실험 결과는 C (84)의 높은 균일 성 실리콘 표면이 제어 된 자기 조립 나노 메커니즘을 사용하여, 절삭 공구, 전계 방출 디스플레이 (FED), 광전자 소자 제조, MEMS의 응용에서 중요한 발전을 나타낸다하여 제조 - 임베디드 및 노력 입증 카바이드 반도체에 적합한 교체를 찾을 수 있습니다. 반 경험적 잠재력을 가진 분자 역학 (MD) 방법은 수 bC (84)의 나노 압입을 연구하는 데 전자는 Si 기판을 - 임베디드. MD 시뮬레이션을 수행하기위한 상세한 설명은 여기에 제공된다. 들여 쓰기의 힘, 탄성 계수, 표면 강도, 원자 스트레스, 원자 변형 등의 MD 시뮬레이션의 기계적 분석에 대한 종합적인 연구를위한 세부 사항이 포함되어 있습니다. 압입 모델의 원자 스트레스 - 폰 미제스 응력 분포는 원자 적 레벨 시간 평가를 변형 메커니즘을 모니터링하도록 계산 될 수있다.

. 무질서의 Si (111) 표면에 C 84 분자의 단일 층 1 그림 A UHV 챔버에서 제어 된 자기 조립 공정을 이용하여 제조 따르면 다양한 정도에 UHV-STM 측정 지형 일련의 이미지를 도시 하였다 : (a) 0.01 ㎖, (b) 0.2 ㎖, (c) 0.7 ㎖, 및 (d) 0.9 ML. 84은 C 매립 Si 기판의 전기 광학적 특성은 또한 STM 및 PL (도 2) 등의 표면 분석 기술의 다양한 사용하여 조사 하였다. 결과 샘플의 우수한 재료 특성은 나노 기술이 atomic- 및 나노 스케일에서 물질의 제어에 사용할 수있는 방법을 보여줍니다. 그림 3의 MFM과 SQUID 결과 C (84) 임베디드 기판의 표면에 자성을 보여줍니다. 4는 제안 된 기판의 나노 기계을 참조 UHV-AFM 결과를 보여줍니다. 우리의 실험 결과는 C (84)의 가능성을 보여 </sUB&gt; 고온 고출력 용 나노 전자 장치의 반도체 탄화 대안으로 매립 실리콘 기판, 고주파 어플리케이션에서뿐만 아니라 (도 4) 자기 및 MEMS 디바이스. 시뮬레이션 부에서 모든 절차는 MD 시뮬레이션을 수행 LAMMPS을 사용하여 완성된다. 플러렌 내장 기판의 기계적 특성 (압입 힘과 접촉 응력)이 계산되고도 6에 도시되어있다. 상이한 시간 간격에서 원자의 폰 - 미제스 응력 해석 로컬 변형을 특성화하는 데 사용된다. 압입 깊이의 함수로서 대응하는 스냅 샷 계산 OVITO 시각화 된도 6의 인서트에서 볼 수있다. 압입 깊이의 함수로서 압입 힘의 결과 경도 H (도 7a), 감소 계수 E를 계산하기 위해 사용되는 &lt;서브&gt; R (도 7b), 및로드 강성 S는 C (84) 단층의 (그림 8). 결과는 실험에 의해 결정하는 비교 및 ​​기계적 특성의 변화를 해석하는보기의 더 상세한 점을 제공 할 수있다. <img alt="그림 1" src="/files/ftp_upload/54235/54235fig1.jpg" /> 그림 1 : 다른 범위와 C (84) 임베디드 Si 기판 STM 지형 이미지 (40 × 40 nm의 2) C에게시에 흡착 (84) 분자를 보여주는 시리즈 2 V의 음성 시료 바이어스에서 (111)면, UHV-STM에 의해 측정. 따르면 다양한 수준으로 : (a) 0.01 ㎖, (b) 0.2 ㎖, (c) 0.7 ㎖, 및 (d) 0.9 ML. <img alt="그림 2" src="/files/ftp_upload/54235/54235fig2.jpg" /><br/&gt;도 2 : C 84 전자적 특성 측정은 Si 기판을 내장 (a) C (84)의 하나의 자기 조립 층의 전압 곡선 대 IV 곡선 및 차동 유도체 컨덕턴스 (디 / DV), UHV-STM에 의해 측정. ; (b) 전계 곡선 대 전계 방출 전류 밀도; 소스 - 측정 기기를 사용하여 측정 한 임베디드 C (84) 표면의 FN 플롯 대응 (c); C (84)의 하나의 자기 조립 층의 (d)는 광 발광 스펙트럼. 다시 인쇄 참조 (12)로부터 권한. <a href="https://www.jove.com/files/ftp_upload/54235/54235fig2large.jpg" target="_blank">이 그림의 더 큰 버전을 보려면 여기를 클릭하십시오.</a> <img alt="그림 3" src="/files/ftp_upload/54235/54235fig3.jpg" /> 그림 3 : </str옹&gt; C (84)의 표면 자기 임베디드 Si 기판 (A) C (84)에 내장 된 실리콘 기판의 MFM 이미지입니다.; (b)는 자화 루프가 외부 자기장에 그려진 <a href="https://www.jove.com/files/ftp_upload/54235/54235fig3large.jpg" target="_blank">이 그림의 더 큰 버전을 보려면 여기를 클릭하십시오.</a> <img alt="그림 4" src="/files/ftp_upload/54235/54235fig4.jpg" /> 그림 4 : UHV-AFM을 사용하여 결정 C (84)에 나노 기계의 조사가 포함 된 Si 기판 무질서 실리콘 표면의 힘 - 거리 분석, 7 × 7 표면, 실리콘 표면에 내장 된 C (84), 및 Si 표면의 하나의 자기 조립 층,.. 다시 인쇄 참조 (11)의 허가. <a href="https://www.jove.com/files/ftp_upload/54235/54235fig4large.jpg" target="_blank">여기를 클릭하십시오</a>이 그림의 더 큰 버전을 볼 수 있습니다. <img alt="그림 5" src="/files/ftp_upload/54235/54235fig5.jpg" /> 그림 5 : 시뮬레이션 모델을 설정하기위한 차트 흐름 극적인는시 (111) 7 × 7 모델에 포함는 C (84) 단층 단일 층 C (84)에서 MD 시뮬레이션의 설정을 설명 및 Si (111) 7 × 7면.. 세부 절차는 프로토콜의 섹션 5에서 볼 수 있습니다. <a href="https://www.jove.com/files/ftp_upload/54235/54235fig5large.jpg" target="_blank">이 그림의 더 큰 버전을 보려면 여기를 클릭하십시오.</a> <img alt="그림 6" src="/files/ftp_upload/54235/54235fig6.jpg" /> 그림 6 : 들여 쓰기의 힘과 연락 스트레스 분석 들여 쓰기 힘 (검은 색)과 압입 깊이의 함수로 C (84)의 스트레스 (파란색)에 문의하십시오.. 삽입서로 다른 색상의 모든 원자의 VM (ε) 해당 폰 미제스의 변형을 나타내는 해당 스냅 샷을 보여줍니다. 변형 현지화, ε VM 만 원자&gt; 0.08 스냅 샷에 표시됩니다를 표시 지우려면. <a href="https://www.jove.com/files/ftp_upload/54235/54235fig6large.jpg" target="_blank">이 그림의 더 큰 버전을 보려면 여기를 클릭하십시오.</a> <img alt="그림 7" src="/files/ftp_upload/54235/54235fig7.jpg" /> 그림 7 :.. 경도 감소 계수 분석 (A) 경도 및 Si 표면에 C (84) 단층에 대한 압입 깊이의 함수로 (b)는 감소 계수 변동 <a href="https://www.jove.com/files/ftp_upload/54235/54235fig7large.jpg" target="_blank">이 그림의 더 큰 버전을 보려면 여기를 클릭하십시오.</a> 그림 8 :로드 강성 분석. C 84 / SI 용 AFM 실험에 의한 비교 MD 시뮬레이션에 의해 결정된 거리의 함수로서 강성로드. 참조 (16)에서 수정. <a href="https://www.jove.com/files/ftp_upload/54235/54235fig8large.jpg" target="_blank">이 그림의 더 큰 버전을 보려면 여기를 클릭하십시오.</a>

Watch this Scientific Journal Video about Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics at JoVE.com

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

This paper reports the nanomaterial fabrication of a fullerene Si substrate inspected and verified by nanomeasurements and molecular dynamic simulation.

C 프로빙<sub&gt; (84)</sub&gt;은 스캐닝 프로브 현미경 및 분자 역학을 사용하여 실리콘 기판을 - 임베디드

This paper reports an array-designed C84-embedded Si substrate fabricated using a controlled self-assembly method in an ultra-high vacuum chamber. The ...

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Nanyang Technological University

Research

JoVE Journal

Engineering

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

11.6K 조회수.  National Chung Hsing University. This paper reports the nanomaterial fabrication of a fullerene Si substrate inspected and verified by nanomeasurements and molecular dynamic simulation.

비디오: Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Probing and Mapping Electrode Surfaces in Solid Oxide Fuel Cells

Solid oxide fuel cells (SOFCs) are potentially the most efficient and cost-effective solution to utilization of a wide variety of fuels beyond hydrogen 1-7. The performance of SOFCs and the rates of many chemical and energy transformation processes in energy storage and conversion devices in general are limited primarily by charge and mass transfer along electrode surfaces and across interfaces. Unfortunately, the mechanistic understanding of these processes is still lacking, due largely to the difficulty of characterizing these processes under in situ conditions. This knowledge gap is a chief obstacle to SOFC commercialization. The development of tools for probing and mapping surface chemistries relevant to electrode reactions is vital to unraveling the mechanisms of surface processes and to achieving rational design of new electrode materials for more efficient energy storage and conversion2. Among the relatively few in situ surface analysis methods, Raman spectroscopy can be performed even with high temperatures and harsh atmospheres, making it ideal for characterizing chemical processes relevant to SOFC anode performance and degradation8-12. It can also be used alongside electrochemical measurements, potentially allowing direct correlation of electrochemistry to surface chemistry in an operating cell. Proper in situ Raman mapping measurements would be useful for pin-pointing important anode reaction mechanisms because of its sensitivity to the relevant species, including anode performance degradation through carbon deposition8, 10, 13, 14 ("coking") and sulfur poisoning11, 15 and the manner in which surface modifications stave off this degradation16. The current work demonstrates significant progress towards this capability. In addition, the family of scanning probe microscopy (SPM) techniques provides a special approach to interrogate the electrode surface with nanoscale resolution. Besides the surface topography that is routinely collected by AFM and STM, other properties such as local electronic states, ion diffusion coefficient and surface potential can also be investigated17-22. In this work, electrochemical measurements, Raman spectroscopy, and SPM were used in conjunction with a novel test electrode platform that consists of a Ni mesh electrode embedded in an yttria-stabilized zirconia (YSZ) electrolyte. Cell performance testing and impedance spectroscopy under fuel containing H2S was characterized, and Raman mapping was used to further elucidate the nature of sulfur poisoning. In situ Raman monitoring was used to investigate coking behavior. Finally, atomic force microscopy (AFM) and electrostatic force microscopy (EFM) were used to further visualize carbon deposition on the nanoscale. From this research, we desire to produce a more complete picture of the SOFC anode.

We present a unique platform for characterizing electrode surfaces in solid oxide fuel cells (SOFCs) that allows simultaneous performance of multiple characterization techniques (e.g. in situ Raman spectroscopy and scanning probe microscopy alongside electrochemical measurements). Complementary information from these analyses may help to advance toward a more profound understanding of electrode reaction and degradation mechanisms, providing insights into rational design of better materials for SOFCs.

고체 산화물 연료 전지의 전극 표면을 탐색 및 매핑

Solid oxide fuel cells (SOFCs) are potentially the most efficient and cost-effective solution to utilization of a wide variety of fuels beyond hydrogen ...

연구

공학

Scanning-probe Single-electron Capacitance Spectroscopy

The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the electronic quantum structure of small systems - including individual atomic dopants in semiconductors. Here we present a capacitance-based method, known as Subsurface Charge Accumulation (SCA) imaging, which is capable of resolving single-electron charging while achieving sufficient spatial resolution to image individual atomic dopants. The use of a capacitance technique enables observation of subsurface features, such as dopants buried many nanometers beneath the surface of a semiconductor material1,2,3. In principle, this technique can be applied to any system to resolve electron motion below an insulating surface.
As in other electric-field-sensitive scanned-probe techniques4, the lateral spatial resolution of the measurement depends in part on the radius of curvature of the probe tip. Using tips with a small radius of curvature can enable spatial resolution of a few tens of nanometers. This fine spatial resolution allows investigations of small numbers (down to one) of subsurface dopants1,2. The charge resolution depends greatly on the sensitivity of the charge detection circuitry; using high electron mobility transistors (HEMT) in such circuits at cryogenic temperatures enables a sensitivity of approximately 0.01 electrons/Hz&frac12; at 0.3 K 5.

Scanning-probe single-electron capacitance spectroscopy facilitates the study of single-electron motion in localized subsurface regions. A sensitive charge-detection circuit is incorporated into a cryogenic scanning probe microscope to investigate small systems of dopant atoms beneath the surface of semiconductor samples.

스캐닝 프로브 단일 전자 용량 분광학

The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the ...

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees of freedom to control electronic devices. In particular, the behavior of graphene&#8217;s charge carriers in response to potentials from charged Coulomb impurities is predicted to differ significantly from that of most materials. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) can provide detailed information on both the spatial and energy dependence of graphene&#39;s electronic structure in the presence of a charged impurity.&#160;The design of a hybrid impurity-graphene device, fabricated using controlled deposition of impurities onto a back-gated graphene surface, has enabled several novel methods for controllably tuning graphene&#8217;s electronic properties.1-8 Electrostatic gating enables control of the charge carrier density in graphene and the ability to reversibly tune the charge2 and/or molecular5 states of an impurity. This paper outlines the process of fabricating a gate-tunable graphene device decorated with individual Coulomb impurities for combined STM/STS studies.2-5 These studies provide valuable insights into the underlying physics, as well as signposts for designing hybrid graphene devices.

This paper details the fabrication process of a gate-tunable graphene device, decorated with Coulomb impurities for scanning tunneling microscopy studies. Mapping the spatially dependent electronic structure of graphene in the presence of charged impurities unveils the unique behavior of its relativistic charge carriers in response to a local Coulomb potential.

쿨롱 불순물 스캐닝 터널링 현미경 연구 게이트 - 조정 가능한 그래 핀 장치의 제작

Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees ...

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography (CT) and Light Microscopy (LM) Correlated with Scanning Electron Microscopy (SEM)

In failure analysis, device characterization and reverse engineering of light emitting diodes (LEDs), and similar electronic components of micro-characterization, plays an important role. Commonly, different techniques like X-ray computed tomography (CT), light microscopy (LM) and scanning electron microscopy (SEM) are used separately. Similarly, the results have to be treated for each technique independently. Here a comprehensive study is shown which demonstrates the potentials leveraged by linking CT, LM and SEM. In depth characterization is performed on a white emitting LED, which can be operated throughout all characterization steps. Major advantages are: planned preparation of defined cross sections, correlation of optical properties to structural and compositional information, as well as reliable identification of different functional regions. This results from the breadth of information available from identical regions of interest (ROIs): polarization contrast, bright and dark-field LM images, as well as optical images of the LED cross section in operation. This is supplemented by SEM imaging techniques and micro-analysis using energy dispersive X-ray spectroscopy.

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

A workflow for comprehensive micro-characterization of active optical devices is outlined. It contains structural as well as functional investigations by means of CT, LM and SEM. The method is demonstrated for a white LED which can be still be operated during characterization.

(SEM) X 선 컴퓨터 단층 촬영 (CT) 및 주사 전자 현미경과 상관 광학 현미경 (LM)의 조합에 따라 LED를 깊이 분석에서

In failure analysis, device characterization and reverse engineering of light emitting diodes (LEDs), and similar electronic components of ...

Hand Controlled Manipulation of Single Molecules via a Scanning Probe Microscope with a 3D Virtual Reality Interface

Considering organic molecules as the functional building blocks of future nanoscale technology, the question of how to arrange and assemble such building blocks in a bottom-up approach is still open. The scanning probe microscope (SPM) could be a tool of choice; however, SPM-based manipulation was until recently limited to two dimensions (2D). Binding the SPM tip to a molecule at a well-defined position opens an opportunity of controlled manipulation in 3D space. Unfortunately, 3D manipulation is largely incompatible with the typical 2D-paradigm of viewing and generating SPM data on a computer. For intuitive and efficient manipulation we therefore couple a low-temperature non-contact atomic force/scanning tunneling microscope (LT NC-AFM/STM) to a motion capture system and fully immersive virtual reality goggles. This setup permits &#34;hand controlled manipulation&#34; (HCM), in which the SPM tip is moved according to the motion of the experimenter&#39;s hand, while the tip trajectories as well as the response of the SPM junction are visualized in 3D. HCM paves the way to the development of complex manipulation protocols, potentially leading to a better fundamental understanding of nanoscale interactions acting between molecules on surfaces. Here we describe the setup and the steps needed to achieve successful hand-controlled molecular manipulation within the virtual reality environment.

We demonstrate the precise manipulation of individual organic molecules on a metal surface with the tip of a scanning probe microscope driven in 3D by the experimenter's hand using a motion capture system and fully immersive virtual reality goggles.

손 3D 가상 현실 인터페이스와 스캐닝 프로브 현미경을 통해 단일 분자의 조작을 제어

Considering organic molecules as the functional building blocks of future nanoscale technology, the question of how to arrange and assemble such building ...

Studying Dynamic Processes of Nano-sized Objects in Liquid using Scanning Transmission Electron Microscopy

Samples fully embedded in liquid can be studied at a nanoscale spatial resolution with Scanning Transmission Electron Microscopy (STEM) using a microfluidic chamber assembled in the specimen holder for Transmission Electron Microscopy (TEM) and STEM. The microfluidic system consists of two silicon microchips supporting thin Silicon Nitride (SiN) membrane windows. This article describes the basic steps of sample loading and data acquisition. Most important of all is to ensure that the liquid compartment is correctly assembled, thus providing a thin liquid layer and a vacuum seal. This protocol also includes a number of tests necessary to perform during sample loading in order to ensure correct assembly. Once the sample is loaded in the electron microscope, the liquid thickness needs to be measured. Incorrect assembly may result in a too-thick liquid, while a too-thin liquid may indicate the absence of liquid, such as when a bubble is formed. Finally, the protocol explains how images are taken and how dynamic processes can be studied. A sample containing AuNPs is imaged both in pure water and in saline.

This protocol describes the operation of a liquid flow specimen holder for scanning transmission electron microscopy of AuNPs in water, as used for the observation of nanoscale dynamic processes.

스캔 전송 전자 현미경을 사용하여 액체에 나노 크기의 개체의 동적 프로세스를 공부

Samples fully embedded in liquid can be studied at a nanoscale spatial resolution with Scanning Transmission Electron Microscopy (STEM) using a ...

Precision Milling of Carbon Nanotube Forests Using Low Pressure Scanning Electron Microscopy

A nanoscale fabrication technique appropriate for milling carbon nanotube (CNT) forests is described. The technique utilizes an environmental scanning electron microscope (ESEM) operating with a low pressure water vapor ambient. In this technique, a portion of the electron beam interacts with the water vapor in the vicinity of the CNT sample, dissociating the water molecules into hydroxyl radicals and other species by radiolysis. The remainder of the electron beam interacts with the CNT forest sample, making it susceptible to oxidation from the chemical products of radiolysis. This technique may be used to trim a selected region of an individual CNT, or it may be used to remove hundreds of cubic microns of material by adjusting ESEM parameters. The machining resolution is similar to the imaging resolution of the ESEM itself. The technique produces only small quantities of carbon residue along the boundaries of the cutting zone, with minimal effect on the native structural morphology of the CNT forest.

Low pressure scanning electron microscopy in a water vapor ambient is used to machine nanoscale to microscale features in carbon nanotube forests.

저압 주사 전자 현미경을 사용하여 탄소 나노 튜브 숲의 정밀 밀링

A nanoscale fabrication technique appropriate for milling carbon nanotube (CNT) forests is described. The technique utilizes an environmental scanning ...

Measurements of Soil Carbon by Neutron-Gamma Analysis in Static and Scanning Modes

The herein described application of the inelastic neutron scattering (INS) method for soil carbon analysis is based on the registration and analysis of gamma rays created when neutrons interact with soil elements. The main parts of the INS system are a pulsed neutron generator, NaI(Tl) gamma detectors, split electronics to separate gamma spectra due to INS and thermo-neutron capture (TNC) processes, and software for gamma spectra acquisition and data processing. This method has several advantages over other methods in that it is a non-destructive in situ method that measures the average carbon content in large soil volumes, is negligibly impacted by local sharp changes in soil carbon, and can be used in stationary or scanning modes. The result of the INS method is the carbon content from a site with a footprint of ~2.5 - 3 m2 in the stationary regime, or the average carbon content of the traversed area in the scanning regime. The measurement range of the current INS system is &#62;1.5 carbon weight % (standard deviation &#177; 0.3 w%) in the upper 10 cm soil layer for a 1 hmeasurement.

Here, we present the protocol for in situ measurement of soil carbon using the neutron-gamma technique for single point measurements (static mode) or field averages (scanning mode). We also describe system construction and elaborate data treatment procedures.

측정 토양 탄소 고정 및 검색 모드에서 중성자-감마선 분석에 의해

The herein described application of the inelastic neutron scattering (INS) method for soil carbon analysis is based on the registration and analysis of ...

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

The miniaturization of semiconductor devices to scales where small numbers of dopants can control device properties requires the development of new techniques capable of characterizing their dynamics. Investigating single dopants requires sub-nanometer spatial resolution, which motivates the use of scanning tunneling microscopy (STM). However, conventional STM is limited to millisecond temporal resolution. Several methods have been developed to overcome this shortcoming, including all-electronic time-resolved STM, which is used in this study to examine dopant dynamics in silicon with nanosecond resolution. The methods presented here are widely accessible and allow for local measurement of a wide variety of dynamics at the atomic scale. A novel time-resolved scanning tunneling spectroscopy technique is presented and used to efficiently search for dynamics.

We demonstrate an all-electronic method to observe nanosecond-resolved charge dynamics of dopant atoms in silicon with a scanning tunneling microscope.

모든 전자 나노초 해결 주사 터널링 현미경: 촉진 단일 불순물 충전 역학 조사

The miniaturization of semiconductor devices to scales where small numbers of dopants can control device properties requires the development of new ...

Developing High Performance GaP/Si Heterojunction Solar Cells

To improve the efficiency of Si-based solar cells beyond their Shockley-Queisser limit, the optimal path is to integrate them with III-V-based solar cells. In this work, we present high performance GaP/Si heterojunction solar cells with a high Si minority-carrier lifetime and high crystal quality of epitaxial GaP layers. It is shown that by applying phosphorus (P)-diffusion layers into the Si substrate and a SiNx layer, the Si minority-carrier lifetime can be well-maintained during the GaP growth in the molecular beam epitaxy (MBE). By controlling the growth conditions, the high crystal quality of GaP was grown on the P-rich Si surface. The film quality is characterized by atomic force microscopy and high-resolution x-ray diffraction. In addition, MoOx was implemented as a hole-selective contact that led to a significant increase in the short-circuit current density. The achieved high device performance of the GaP/Si heterojunction solar cells establishes a path for further enhancement of the performance of Si-based photovoltaic devices.

Here, we present a protocol to develop high-performance GaP/Si heterojunction solar cells with a high Si minority-carrier lifetime.

높은 성능 격차/Si Heterojunction 태양 전지 개발

To improve the efficiency of Si-based solar cells beyond their Shockley-Queisser limit, the optimal path is to integrate them with III-V-based solar ...

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