Name: probing c84-embedded si substrate using scanning probe microscopy and molecular dynamics
Uploaded: 2016-09-28T12:30:00
Description: Watch this Scientific Journal Video about Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics at JoVE.com

The authors would like to thank the Ministry of Science and Technology of Taiwan, for their financial support of this research under Contract Nos. MOST-102-2923-E-492- 001-MY3 (W. J. Lee) and NSC-102- 2112-M-005-003-MY3 (M. S. Ho). Support from the High-performance Computing of Taiwan in providing huge computing resources to facilitate this research is also gratefully acknowledged.

NOTE: The paper outlines the methods used in the formation of a self-assembled fullerene array on the surface of a semiconducting substrate. Specifically, we present a novel method for the preparation of a fullerene-embedded silicon substrate for use as a field emitter or substrate in microelectromechanical systems (MEMS), and optoelectronic devices in high-temperature, high-power, applications as well as in high-frequency devices9-13.
1. Fabrication of Hexagonal-closed-packaged (HCP)...

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In this study, we demonstrate the fabrication of a self-assembled monolayer of C84 on a Si substrate through a novel annealing process (Figure 1). This process can also be used to prepare other kinds of nanoparticle-embedded semiconductor substrates. The C84-embedded Si substrate was characterized at the atomic scale using UHV-STM (Figure 2), field emission spectrometer, photo-luminescence spectroscopy, MFM and SQUID (Figure 3).
<p class="jove_c...

Fullerene molecules and the composite materials they comprise are distinctive among nanomaterials due to their excellent structural characteristics, electronic conductivity, mechanical strength, and chemical properties1-4. These materials have proven highly beneficial in a range of fields, such as electronics, computers, fuel cell technology, solar cells, and field emission technology5,6.
Among these materials, silicon carbide (SiC) nanoparticle composites have received particular attention thanks to their wide band gap, high thermal conductivity and stability, high electrical breakdown ability, and chemical inertness. These benefits are particularly obvious in optoelectronic devices, metal-oxide-semiconductor field-effect transistors (MOSFET), light-emitting diodes (LEDs), and high-power, high-frequency, and high-temperature applications. However, high density defects commonly observed on the surface of conventional silicon carbide can have detrimental effects on the electronic structure, even leading to device failure7,8. Despite the fact that the application of SiC has been studied since 1960, this particular unresolved problem remains.
The aim of this study was the fabrication of a C84-embedded Si substrate heterojunction and subsequent analysis to obtain a comprehensive understanding of the electronic, optoelectronic, mechanical, magnetic, and field emission properties of the resulting materials. We also addressed the issue of using numerical simulation to predict the characteristics of nanomaterials, through the novel application of molecular dynamics calculations.

<table border="0" cellpadding="0" cellspacing="0" width="972">
	<tbody>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Silicon wafer</td>
			<td style="width:203px;"></td>
			<td style="width:119px;"></td>
			<td style="width:435px;">Si(111) Type/Dopant: P/Boron&#160; Resistivity: 0.05-0.1 Ohm.cm</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Carbon,C84</td>
			<td style="width:203px;">Legend Star</td>
			<td style="width:119px;"></td>
			<td>C84 powder, 98%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Hydrochloric acid</td>
			<td style="width:203px;">Sigma-Aldrich</td>
			<td style="width:119px;">84422</td>
			<td>RCA,37%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Ammonium</td>
			<td style="width:203px;">Choneye Pure Chemical</td>
			<td style="width:119px;"></td>
			<td>RCA,25%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Hydrogen peroxide</td>
			<td style="width:203px;">Choneye Pure Chemical</td>
			<td style="width:119px;"></td>
			<td>RCA,35%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Nitrogen&#160;</td>
			<td style="width:203px;">Ni Ni Air</td>
			<td style="width:119px;"></td>
			<td>high-pressure bottle,95%</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Tungsten</td>
			<td style="width:203px;">Nilaco</td>
			<td style="width:119px;">461327</td>
			<td>wire, diameter 0.3 mm, tip</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Sodium hydroxide</td>
			<td style="width:203px;">UCW</td>
			<td style="width:119px;">85765</td>
			<td>etching Tungsten wire for tip,</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;">Acetone</td>
			<td style="width:203px;">Marcon Fine Chemicals</td>
			<td style="width:119px;">99920</td>
			<td>suitable for liquid chromatography and UV-spectrophotometry</td>
		</tr>
		<tr height="20">
			<td height="20" style="height:20px;width:216px;">Methanol</td>
			<td style="width:203px;">Marcon Fine Chemicals</td>
			<td style="width:119px;">64837</td>
			<td>suitable for liquid chromatography and UV-spectrophotometry</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">UHV-SPM</td>
			<td style="width:203px;">JEOL Ltd</td>
			<td style="width:119px;">JSPM-4500A</td>
			<td>Ultrahigh Vacuum Scanning Tunneling Microscope and Ultrahigh Vacuum Atomic Force Microscope</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;">Power supply</td>
			<td style="width:203px;">&#160;Keithley&#160;</td>
			<td style="width:119px;">237</td>
			<td>High-Voltage Source-Measure Unit</td>
		</tr>
		<tr height="21">
			<td height="21" style="height:21px;width:216px;">SQUID</td>
			<td style="width:203px;">Quantum desigh</td>
			<td style="width:119px;">MPMS-7</td>
			<td>Magnetic field strength: &#177; 7.0 Tesla, Temperature range: 2 ~ 400 K, Magnetic-dipole range:5 &#215; 10^-7 ~ 300 emu</td>
		</tr>
		<tr height="63">
			<td height="63" style="height:63px;width:216px;">ALPS</td>
			<td style="width:203px;">National Center for High-performance Computing, Taiwan</td>
			<td style="width:119px;"></td>
			<td>Advanced Large-scale Parallel Supercluster, 177Tflops; 25,600 CPU cores; 73,728 GB RAM; 1074 TB storage</td>
		</tr>
	</tbody>
</table>

probing c84-embedded si substrate using scanning probe microscopy and molecular dynamics

This paper reports an array-designed C84-embedded Si substrate fabricated using a controlled self-assembly method in an ultra-high vacuum chamber. The characteristics of the C84-embedded Si surface, such as atomic resolution topography, local electronic density of states, band gap energy, field emission properties, nanomechanical stiffness, and surface magnetism, were examined using a variety of surface analysis techniques under ultra, high vacuum (UHV) conditions as well as in an atmospheric system. Experimental results demonstrate the high uniformity of the C84-embedded Si surface fabricated using a controlled self-assembly nanotechnology mechanism, represents an important development in the application of field emission display (FED), optoelectronic device fabrication, MEMS cutting tools, and in efforts to find a suitable replacement for carbide semiconductors. Molecular dynamics (MD) method with semi-empirical potential can be used to study the nanoindentation of C84-embedded Si substrate. A detailed description for performing MD simulation is presented here. Details for a comprehensive study on mechanical analysis of MD simulation such as indentation force, Young&#39;s modulus, surface stiffness, atomic stress, and atomic strain are included. The atomic stress and von-Mises strain distributions of the indentation model can be calculated to monitor deformation mechanism with time evaluation in atomistic level.

A monolayer of C84 molecules on a disordered Si(111) surface was fabricated using a controlled self-assembly process in a UHV chamber. Figure 1 shows a series of topographic images measured by UHV-STM with various degrees of coverage: (a) 0.01 ML, (b) 0.2 ML, (c) 0.7 ML, and (d) 0.9 ML. The electronic and optical properties of the C84 embedded Si substrate were also investigated using a variety of surface analysis techniques, such as STM and PL (Figure 2). The excel...

Watch this Scientific Journal Video about Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics at JoVE.com

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

This paper reports the nanomaterial fabrication of a fullerene Si substrate inspected and verified by nanomeasurements and molecular dynamic simulation.

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

This paper reports an array-designed C84-embedded Si substrate fabricated using a controlled self-assembly method in an ultra-high vacuum chamber. The ...

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