JoVE Logo
Faculty Resource Center

Sign In

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

DOI :

10.3791/53200-v

December 5th, 2015

December 5th, 2015

11,998 Views

1Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, 2Department of Electronic Engineering, National Taiwan University of Science and Technology

We describe the approaches for the device fabrication and electrical characterization of molybdenum diselenide (MoSe2) layer semiconductor nanostructures with different thicknesses. In addition, the fabrication of ohmic contacts for MoSe2-layer nanocrystals by the focused-ion beam deposition method using platinum (Pt) as a contact metal is described.

Tags

Keywords Ohmic Contact

-- Views

Related Videos

article

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

article

Fabrication and Characterization of Disordered Polymer Optical Fibers for Transverse Anderson Localization of Light

article

Writing and Low-Temperature Characterization of Oxide Nanostructures

article

Patterning via Optical Saturable Transitions - Fabrication and Characterization

article

Fabrication and Operation of a Nano-Optical Conveyor Belt

article

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

article

Phase Diagram Characterization Using Magnetic Beads as Liquid Carriers

article

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

article

Focused Ion Beam Fabrication of LiPON-based Solid-state Lithium-ion Nanobatteries for In Situ Testing

article

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

JoVE Logo

Privacy

Terms of Use

Policies

Research

Education

ABOUT JoVE

Copyright © 2024 MyJoVE Corporation. All rights reserved