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Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

DOI :

10.3791/50376-v

April 22nd, 2013

April 22nd, 2013

12,473 Views

1Department of Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, 2Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg ( ZSW )

In this work, we describe the use of the atom-probe tomography technique for studying the grain boundaries of the absorber layer in a CIGS solar cell. A novel approach to prepare the atom probe tips containing the desired grain boundary with a known structure is also presented here.

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